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Utetiwabo W, Zhou L, Tufail MK, Zuo X, Yang L, Zeng J, Shao R, Yang W. Insight into the effects of dislocations in nanoscale titanium niobium oxide (Ti 2Nb 14O 39) anode for boosting lithium-ion storage. J Colloid Interface Sci 2021; 608:90-102. [PMID: 34626999 DOI: 10.1016/j.jcis.2021.09.149] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Revised: 09/23/2021] [Accepted: 09/24/2021] [Indexed: 11/19/2022]
Abstract
Defect engineering through induction of dislocations is an efficient strategy to design and develop an electrode material with enhanced electrochemical performance in energy storage technology. Yet, synthesis, comprehension, identification, and effect of dislocation in electrode materials for lithium-ion batteries (LIBs) are still elusive. Herein, we propose an ethanol-thermal method mediated with surfactant-template and subsequent annealing under air atmosphere to induce dislocation into titanium niobium oxide (Ti2Nb14O39), resultant nanoscale-dislocated-Ti2Nb14O39 (Nano-dl-TNO). High-resolution transmission electron microscope (HRTEM), fast Fourier transform (FFT), and Geometrical phase analysis (GPA) denote that the high dislocation density engraved with stacking faults forms into the Ti2Nb14O39 lattice. The presence of dislocation could offer an additional active site for lithium-ion storage and tune the electrical and ionic properties of the Ti2Nb14O39. The resultant Nano-dl-TNO delivers superior rate capability, high specific capacity, better cycling stability, and making Ti2Nb14O39 a suitable candidate among fast-charging anode materials for lithium-ion batteries. Moreover, In-situ High-resolution transmission electron microscope (HRTEM) and Geometrical phase analysis (GPA) evinces that the removal of the dislocated area in the Nano-dl-TNO leads to the contraction of the lattice, alleviation of the total volume expansion, causing the symmetrization and preserves structural stability. The present findings and designed approach reveal the rose-colored perspective of dislocation engineering into mixed transition metal oxides as next-generation anodes for advanced lithium-ion batteries and all-solid-state lithium-ion batteries.
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Affiliation(s)
- Wellars Utetiwabo
- Key Laboratory of Cluster Science of Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Department of Mathematics, Science and Physical Education, School of Education, College of Education, University of Rwanda, P.O. Box 55, Rwamagana, Rwanda
| | - Lei Zhou
- Key Laboratory of Cluster Science of Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, PR China
| | - Muhammad Khurram Tufail
- Key Laboratory of Cluster Science of Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, PR China
| | - Xintao Zuo
- Beijing Advanced Innovation Center for Intelligent Robots and Systems and Institute of Convergence in Medicine and Engineering, Beijing Institute of Technology, Beijing 100081, PR China
| | - Le Yang
- Key Laboratory of Cluster Science of Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, PR China
| | - Jinfeng Zeng
- Key Laboratory of Active Components of Xinjiang Natural Medicine and Drug Release Technology, School of Pharmacy, Xinjiang Medical University, 830011 Urumqi, PR China
| | - Ruiwen Shao
- Beijing Advanced Innovation Center for Intelligent Robots and Systems and Institute of Convergence in Medicine and Engineering, Beijing Institute of Technology, Beijing 100081, PR China.
| | - Wen Yang
- Key Laboratory of Cluster Science of Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, PR China.
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2
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Armstrong MD, Lan KW, Guo Y, Perry NH. Dislocation-Mediated Conductivity in Oxides: Progress, Challenges, and Opportunities. ACS NANO 2021; 15:9211-9221. [PMID: 34041913 DOI: 10.1021/acsnano.1c01557] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Dislocations in ionic solids are topological extended defects that modulate composition, strain, and charge over multiple length scales. As such, they provide an extra degree of freedom to tailor ionic and electronic transport beyond limits inherent in bulk doping. Heterogeneity of transport paths as well as the ability to dynamically reconfigure structure and properties through multiple stimuli lend dislocations to particular potential applications including memory, switching, non-Ohmic electronics, capacitive charge storage, and single-atom catalysis. However, isolating, understanding, and predicting causes of modified transport behavior remain a challenge. In this Perspective, we first review existing reports of dislocation-modified transport behavior in oxides, as well as synthetic strategies and multiscale characterization routes to uncover processing-structure-property relationships. We outline a vision for future research, suggesting outstanding questions, tasks, and opportunities. Advances in this field will require highly interdisciplinary, convergent computational-experimental approaches, covering orders of magnitude in length scale, and spanning fields from microscopy and machine learning to electro-chemo-mechanics and point defect chemistry to transport-by-design and advanced manufacturing.
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Affiliation(s)
- Micah D Armstrong
- Department of Materials Science & Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Ave., Urbana, Illinois 61801, United States
| | - Kai-Wei Lan
- Department of Materials Science & Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Ave., Urbana, Illinois 61801, United States
| | - Yiwen Guo
- Department of Materials Science & Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Ave., Urbana, Illinois 61801, United States
| | - Nicola H Perry
- Department of Materials Science & Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Ave., Urbana, Illinois 61801, United States
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3
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Kwon S, Kim TW, Jang S, Lee JH, Kim ND, Ji Y, Lee CH, Tour JM, Wang G. Structurally Engineered Nanoporous Ta 2O 5-x Selector-Less Memristor for High Uniformity and Low Power Consumption. ACS APPLIED MATERIALS & INTERFACES 2017; 9:34015-34023. [PMID: 28889746 DOI: 10.1021/acsami.7b06918] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A memristor architecture based on metal-oxide materials would have great promise in achieving exceptional energy efficiency and higher scalability in next-generation electronic memory systems. Here, we propose a facile method for fabricating selector-less memristor arrays using an engineered nanoporous Ta2O5-x architecture. The device was fabricated in the form of crossbar arrays, and it functions as a switchable rectifier with a self-embedded nonlinear switching behavior and ultralow power consumption (∼2.7 × 10-6 W), which results in effective suppression of crosstalk interference. In addition, we determined that the essential switching elements, such as the programming power, the sneak current, the nonlinearity value, and the device-to-device uniformity, could be enhanced by in-depth structural engineering of the pores in the Ta2O5-x layer. Our results, on the basis of the structural engineering of metal-oxide materials, could provide an attractive approach for fabricating simple and cost-efficient memristor arrays with acceptable device uniformity and low power consumption without the need for additional addressing selectors.
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Affiliation(s)
- Soonbang Kwon
- KU-KIST Graduate School of Converging Science & Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 136-701, Republic of Korea
| | - Tae-Wook Kim
- Applied Quantum Composites Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology , Wanju, Jeollabuk-do 55324, Republic of Korea
| | - Seonghoon Jang
- KU-KIST Graduate School of Converging Science & Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 136-701, Republic of Korea
| | - Jae-Hwang Lee
- Department of Mechanical and Industrial Engineering, University of Massachusetts , Amherst, Massachusetts 01003, United States
| | - Nam Dong Kim
- Applied Quantum Composites Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology , Wanju, Jeollabuk-do 55324, Republic of Korea
- Department of Chemistry, Department of Material Science and NanoEngineering, and Department of Computer Science, Rice University , 6100 Main Street, Houston, Texas 77005, United States
| | - Yongsung Ji
- Department of Chemistry, Department of Material Science and NanoEngineering, and Department of Computer Science, Rice University , 6100 Main Street, Houston, Texas 77005, United States
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science & Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 136-701, Republic of Korea
| | - James M Tour
- Department of Chemistry, Department of Material Science and NanoEngineering, and Department of Computer Science, Rice University , 6100 Main Street, Houston, Texas 77005, United States
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science & Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 136-701, Republic of Korea
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4
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Gilardi E, Gregori G, Wang Y, Sigle W, van Aken PA, Maier J. Interface Effects on the Ion Transport of Epitaxial Y 2Zr 2O 7 Films. ACS APPLIED MATERIALS & INTERFACES 2017; 9:27257-27265. [PMID: 28741349 DOI: 10.1021/acsami.7b00773] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The systematic study of the ionic transport properties of epitaxial Y2Zr2O7 films with defective fluorite structure reveals an enhanced oxygen vacancy conductivity at the interface between the films and the MgO(110) substrate, which is characterized by a high density of misfit dislocations. This beneficial effect is discussed in terms of space-charge and mobility effects.
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Affiliation(s)
- Elisa Gilardi
- Max Planck Institute for Solid State Research , Heisenbergstr. 1, D-70569 Stuttgart, Germany
| | - Giuliano Gregori
- Max Planck Institute for Solid State Research , Heisenbergstr. 1, D-70569 Stuttgart, Germany
| | - Yi Wang
- Max Planck Institute for Solid State Research , Heisenbergstr. 1, D-70569 Stuttgart, Germany
| | - Wilfried Sigle
- Max Planck Institute for Solid State Research , Heisenbergstr. 1, D-70569 Stuttgart, Germany
| | - Peter A van Aken
- Max Planck Institute for Solid State Research , Heisenbergstr. 1, D-70569 Stuttgart, Germany
| | - Joachim Maier
- Max Planck Institute for Solid State Research , Heisenbergstr. 1, D-70569 Stuttgart, Germany
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5
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Olson IA, Shtukenberg AG, Hakobyan G, Rohl AL, Raiteri P, Ward MD, Kahr B. Structure, Energetics, and Dynamics of Screw Dislocations in Even n-Alkane Crystals. J Phys Chem Lett 2016; 7:3112-3117. [PMID: 27478906 DOI: 10.1021/acs.jpclett.6b01459] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Spiral hillocks on n-alkane crystal surfaces were observed immediately after Frank recognized the importance of screw dislocations for crystal growth, yet their structures and energies in molecular crystals remain ill-defined. To illustrate the structural chemistry of screw dislocations that are responsible for plasticity in organic crystals and upon which the organic electronics and pharmaceutical industries depend, molecular dynamics was used to examine heterochiral dislocation pairs with Burgers vectors along [001] in n-hexane, n-octane, and n-decane crystals. The cores were anisotropic and elongated in the (110) slip plane, with significant local changes in molecular position, orientation, conformation, and energy. This detailed atomic level picture produced a distribution of strain consistent with linear elastic theory, giving confidence in the simulations. Dislocations with doubled Burgers vectors split into pairs with elementary displacements. These results suggest a pathway to understanding the mechanical properties and failure associated with elastic and plastic deformation in soft crystals.
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Affiliation(s)
- Isabel A Olson
- Department of Chemistry and Molecular Design Institute, New York University , New York City, New York 10003, United States
| | - Alexander G Shtukenberg
- Department of Chemistry and Molecular Design Institute, New York University , New York City, New York 10003, United States
| | - Gagik Hakobyan
- Department of Chemistry and Molecular Design Institute, New York University , New York City, New York 10003, United States
| | - Andrew L Rohl
- Curtin Institute for Computation and Department of Chemistry, Curtin University , P.O. Box U1987, Perth, Western Australia 6845, Australia
| | - Paolo Raiteri
- Curtin Institute for Computation and Department of Chemistry, Curtin University , P.O. Box U1987, Perth, Western Australia 6845, Australia
| | - Michael D Ward
- Department of Chemistry and Molecular Design Institute, New York University , New York City, New York 10003, United States
| | - Bart Kahr
- Department of Chemistry and Molecular Design Institute, New York University , New York City, New York 10003, United States
- Graduate School of Advanced Science and Engineering (TWIns), Waseda University , Tokyo, Japan
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6
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Marrocchelli D, Sun L, Yildiz B. Dislocations in SrTiO3: Easy To Reduce but Not so Fast for Oxygen Transport. J Am Chem Soc 2015; 137:4735-48. [DOI: 10.1021/ja513176u] [Citation(s) in RCA: 119] [Impact Index Per Article: 13.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Dario Marrocchelli
- Laboratory
for Electrochemical Interfaces, Department of Nuclear Science and
Engineering, Massachusetts Institute of Technology, 77 Massachusetts
Avenue, Cambridge, Massachusetts 02139, United States
| | - Lixin Sun
- Laboratory
for Electrochemical Interfaces, Department of Nuclear Science and
Engineering, Massachusetts Institute of Technology, 77 Massachusetts
Avenue, Cambridge, Massachusetts 02139, United States
| | - Bilge Yildiz
- Laboratory
for Electrochemical Interfaces, Department of Nuclear Science and
Engineering, Massachusetts Institute of Technology, 77 Massachusetts
Avenue, Cambridge, Massachusetts 02139, United States
- Department
of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
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7
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Sun L, Marrocchelli D, Yildiz B. Edge dislocation slows down oxide ion diffusion in doped CeO2 by segregation of charged defects. Nat Commun 2015; 6:6294. [DOI: 10.1038/ncomms7294] [Citation(s) in RCA: 122] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2014] [Accepted: 01/15/2015] [Indexed: 12/11/2022] Open
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Sayle TXT, Caddeo F, Monama NO, Kgatwane KM, Ngoepe PE, Sayle DC. Origin of electrochemical activity in nano-Li2MnO3; stabilization via a 'point defect scaffold'. NANOSCALE 2015; 7:1167-1180. [PMID: 25486438 DOI: 10.1039/c4nr05551a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Molecular dynamics (MD) simulations of the charging of Li2MnO3 reveal that the reason nanocrystalline-Li2MnO3 is electrochemically active, in contrast to the parent bulk-Li2MnO3, is because in the nanomaterial the tunnels, in which the Li ions reside, are held apart by Mn ions, which act as a pseudo 'point defect scaffold'. The Li ions are then able to diffuse, via a vacancy driven mechanism, throughout the nanomaterial in all spatial dimensions while the 'Mn defect scaffold' maintains the structural integrity of the layered structure during charging. Our findings reveal that oxides, which comprise cation disorder, can be potential candidates for electrodes in rechargeable Li-ion batteries. Moreover, we propose that the concept of a 'point defect scaffold' might manifest as a more general phenomenon, which can be exploited to engineer, for example, two or three-dimensional strain within a host material and can be fine-tuned to optimize properties, such as ionic conductivity.
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Affiliation(s)
- Thi X T Sayle
- School of Physical Sciences, University of Kent, Canterbury, CT2 7NZ, UK.
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9
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Zhou YT, Xue YB, Chen D, Wang YJ, Zhang B, Ma XL. Atomic-scale configurations of synchroshear-induced deformation twins in the ionic MnS crystal. Sci Rep 2014; 4:5118. [PMID: 24874022 PMCID: PMC4038820 DOI: 10.1038/srep05118] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2014] [Accepted: 05/07/2014] [Indexed: 11/10/2022] Open
Abstract
Deformation twinning was thought as impossible in ionic compounds with rock-salt structure due to the charge effect on {111} planes. Here we report the presence and formation mechanism of deformation {111} twins in the rock-salt manganese sulphide (MnS) inclusions embedded in a hot-rolled stainless steel. Based on the atomic-scale mapping under aberration-corrected scanning transmission electron microscopy, a dislocation-based mechanism involved two synchronized shear on adjacent atomic layers is proposed to describe the dislocation glide and consequently twinning formation. First-principles calculations of the energy barriers for twinning formation in MnS and comparing with that of PbS and MgO indicate the distinct dislocation glide scheme and deformation behaviors for the rock-salt compounds with different ionicities. This study may improve our understanding of the deformation mechanisms of rock-salt crystals and other ionic compounds.
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Affiliation(s)
- Y T Zhou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Y B Xue
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - D Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Y J Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - B Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - X L Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
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10
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Polymorphism of dislocation core structures at the atomic scale. Nat Commun 2014; 5:3239. [DOI: 10.1038/ncomms4239] [Citation(s) in RCA: 80] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2013] [Accepted: 01/10/2014] [Indexed: 11/08/2022] Open
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Runevall O, Sandberg N. Self-diffusion in MgO--a density functional study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2011; 23:345402. [PMID: 21841226 DOI: 10.1088/0953-8984/23/34/345402] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Density functional theory calculations have been performed to study self-diffusion in magnesium oxide, a model material for a wide range of ionic compounds. Formation energies and entropies of Schottky defects and divacancies were obtained by means of total energy and phonon calculations in supercell configurations. Transition state theory was used to estimate defect migration rates, with migration energies taken from static calculations, and the corresponding frequency factors estimated from the phonon spectrum. In all static calculations we corrected for image effects using either a multipole expansion or an extrapolation to the low concentration limit. It is shown that both methods give similar results. The results for self-diffusion of Mg and O confirm the previously established picture, namely that in materials of nominal purity, Mg diffuses extrinsically by a single vacancy mechanism, while O diffuses intrinsically by a divacancy mechanism. Quantitatively, the current results are in very good agreement with experiments concerning O diffusion, while for Mg the absolute diffusion rate is generally underestimated by a factor of 5-10. The reason for this discrepancy is discussed.
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Affiliation(s)
- Odd Runevall
- Department of Physics, Royal Institute of Technology, KTH, SE-106 91 Stockholm, Sweden
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