The strain regulated physical properties of PbI2/g-C3N4for potential optoelectronic device

The van der Waals (vdW) heterostructures of Z-scheme PbI2/g-C3N4with an indirect bandgap have gained much attention in recent years due to their unique properties and potential applications in various fields. However, the optoelectronic characteristics and strain-modulated effects are not yet fully understood. By considering this, six stacking models of PbI2/g-C3N4are proposed and the stablest structure is selected for further investigation. The uniaxial and biaxial strains (-10%-10%) regulated band arrangement, charge distribution, optical absorption in the framework of density functional theory are systematically explored. The compressive uniaxial strain of -8.55% changes the band type from II→I, and the biaxial strains of -7.12%, -5.25%, 8.91% change the band type in a way of II→I→II→I, acting like the 'band-pass filter'. The uniaxial strains except -10% compressive strain, and the -6%, -4%, 2%, 4%, 10% biaxial strains will enhance the light absorption of PbI2/g-C3N4. The exerted strains on PbI2/g-C3N4generate different power conversion efficiency (ηPCE) values ranging from 3.64% to 25.61%, and the maximumηPCEis generated by -6% biaxial strain. The results of this study will pave the way for the development of new electronic and optoelectronic materials with customized properties in photocatalytic field and optoelectronic devices.

Strain-Induced Nonlinear Frictional Behavior of Graphene Nanowall Films

Graphene nanowall (GNW) films, a representation of three-dimensional (3D) carbon nanomaterial films, are emerging as promising candidates for applications in electric devices and composites, on account of their 3D structures and exceptional properties of graphene sheets. However, the frictional responses of GNW films, which exhibit significant influence on their performances, have seldom been reported. Herein, we reported a growth process of a GNW film by the chemical vapor deposition method and studied the frictional behavior of the GNW film for the first time. The results demonstrated the nonlinearity between the frictional force of the GNW film and normal load. Based on the structural evolution of the GNW film with normal load and frictional tests on precompressed GNW films, the influence of the strain property of the GNW film, namely, the strengthening effect, could be confirmed. The results of molecular dynamics simulations show that the bending force of GNWs in front of the tip plays a determinate role in the frictional force of the GNW film. Furthermore, the bending force is proportional to the bending contact area, which increases nonlinearly with the normal load due to the strengthening effect of the GNW film. The result suggests that the nonlinear increase of the bending contact area induced by the strengthening effect of the GNW film is the key factor that leads to its nonlinear frictional force. This study provides a novel insight into the frictional responses of GNW films, which would be beneficial for the design and application of electric devices and composites made of GNW and other 3D carbon nanomaterial films.

Nanostructured Graphene Surfaces Promote Different Stages of Bone Cell Differentiation

Nanostructured graphene films were used as platforms for the differentiation of Saos-2 cells into bone-like cells. The films were grown using the plasma-enhanced chemical vapor deposition method, which allowed the production of both vertically and horizontally aligned carbon nanowalls (CNWs). Modifications of the technique allowed control of the density of the CNWs and their orientation after the transfer process. The influence of two different topographies on cell attachment, proliferation, and differentiation was investigated. First, the transferred graphene surfaces were shown to be noncytotoxic and were able to support cell adhesion and growth for over 7 days. Second, early cell differentiation (identified by cellular alkaline phosphatase release) was found to be enhanced on the horizontally aligned CNW surfaces, whereas mineralization (identified by cellular calcium production), a later stage of bone cell differentiation, was stimulated by the presence of the vertical CNWs on the surfaces. These results show that the graphene coatings, grown using the presented method, are biocompatible. And their topographies have an impact on cell behavior, which can be useful in tissue engineering applications.

Plasma break-down and re-build: same functional vertical graphenes from diverse natural precursors

Plasmas, the 4(th) state of matter, uniformly transform natural precursors with different chemical composition in solid, liquid, and gas states into the same functional vertical graphenes in a single-step process within a few minutes. Functional vertical graphenes show reliable biosensing properties, strong binding with proteins, and improved adhesion to substrates.

Large networks of vertical multi-layer graphenes with morphology-tunable magnetoresistance

We report on the comparative study of magnetotransport properties of large-area vertical few-layer graphene networks with different morphologies, measured in a strong (up to 10 T) magnetic field over a wide temperature range. The petal-like and tree-like graphene networks grown by a plasma enhanced CVD process on a thin (500 nm) silicon oxide layer supported by a silicon wafer demonstrate a significant difference in the resistance-magnetic field dependencies at temperatures ranging from 2 to 200 K. This behaviour is explained in terms of the effect of electron scattering at ultra-long reactive edges and ultra-dense boundaries of the graphene nanowalls. Our results pave a way towards three-dimensional vertical graphene-based magnetoelectronic nanodevices with morphology-tuneable anisotropic magnetic properties.

Si-compatible cleaning process for graphene using low-density inductively coupled plasma

We report a novel cleaning technique for few-layer graphene (FLG) by using inductively coupled plasma (ICP) of Ar with an extremely low plasma density of 3.5 × 10(8) cm(-3). It is known that conventional capacitively coupled plasma (CCP) treatments destroy the planar symmetry of FLG, giving rise to the generation of defects. However, ICP treatment with extremely low plasma density is able to remove polymer resist residues from FLG within 3 min at a room temperature of 300 K while retaining the carbon sp(2)-bonding of FLG. It is found that the carrier mobility and charge neutrality point of FLG are restored to their pristine defect-free state after the ICP treatment. Considering the application of graphene to silicon-based electronic devices, such a cleaning method can replace thermal vacuum annealing, electrical current annealing, and wet-chemical treatment due to its advantages of being a low-temperature, large-area, high-throughput, and Si-compatible process.