Synthesis and optical properties of II-VI 1D nanostructures

Solution-Processed 1D Wurtzite ZnS Nanostructures with Controlled Crystallographic Orientation and Tunable Band-Edge Emission

1D compound semiconductor nanomaterials possess unique physicochemical properties that strongly depend on their size, composition, and structures. ZnS has been widely investigated as one of the most important semiconductors, and the control of crystallographic orientation of 1D ZnS nanostructures is still challenging and crucial to exploring their anisotropic properties. Herein, a solution-processed strategy is developed to synthesize 1D wurtzite (w-)ZnS nanostructures with the specific <002> and <210> orientations by co-decomposing the copper dibutyldithiocarbamate {[(C4 H9 )2 NCS2 ]2 Cu, i.e., R2 Cu} and zinc dibutyldithiocarbamate (R2 Zn) precursors in the mixed solvents of oleylamine and 1-dodecanethoil. A solution-solid-solid (SSS)-Oriented growth mechanism is proposed, which includes oriented nucleation dominated and SSS growth dominated stages. The crystallographic orientation mainly depends on the interfacial energy and ligand effect. The 1D w-ZnS nanostructures with controlled crystallographic orientation display unique morphologies, i.e., <002>-oriented w-ZnS nanorod enclosed with {110} facets while <210>-oriented w-ZnS nanobelt enclosed with wide (002) and narrow (110) facets. The bandgap of 1D w-ZnS nanostructures can be tuned from 3.94 to 3.82 eV with the crystallographic growth direction varied from <002> to <210>, thus leading to the tunable band-edge emission from ≈338 to ≈345 nm.

Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

GaN is an important III-V semiconductor for a variety of applications owing to its large direct band gap. GaN nanowires (NWs) have demonstrated significant potential as critical building blocks for nanoelectronics and nanophotonic devices, as well as integrated nanosystems. We present a comprehensive analysis of the vapor-liquid-solid (VLS) as a general synthesis technique for NWs on a variety of substrates, the morphological and structural characterization, and applications of GaN NWs in piezoelectric nanogenerators, light-emitting diodes, and solar-driven water splitting. We begin by summarizing the overall VLS growth process of GaN NWs, followed by the growth of NWs on several substrates. Subsequently, we review the various uses of GaN NWs in depth.

Al2O3 buffer-facilitated epitaxial growth of high-quality ZnO/ZnS core/shell nanorod arrays

II-VI semiconductor heterojunctions show huge potential for application in nanodevice fabrication due to their type-II alignments owing to the better spatial separation of electrons and holes. However, the hetero-epitaxial growth of high-quality heterostructures is still a challenge, especially for materials with large lattice mismatch. In this work, well-aligned single-crystalline ZnO/ZnS core/shell nanorod arrays were obtained by introducing an Al2O3 buffer layer. It is interesting that the nature of the ZnS layer varies with the thickness of the Al2O3 layer. When Al2O3 is less than 2 nm, the interaction between the substrate and epilayer is strong enough to penetrate through the buffer layer, enabling the growth of ZnS on Al2O3-coated ZnO nanorod arrays. On the basis of detailed characterization, a rational growth mechanism of the core/shell heterostructure is proposed, in which the Al2O3 interlayer can eliminate voids due to the Kirkendall effect around the interface and accommodate a misfit dislocation between the inner ZnO and outer ZnS, resulting in more sufficient strain relaxation in the epitaxy. In addition, cathodoluminescence measurements demonstrate that the optical properties of the ZnO/ZnS heterostructure could be effectively improved by taking advantage of the thin Al2O3. The I-V curves characterized by PeakForce tunneling atomic force microscopy reveal that the heterostructure shows a typical rectifying behavior and good photoresponse to ultraviolet light. These findings may provide a reasonable and effective strategy for the growth of highly lattice-mismatched heterostructure arrays buffered by the Al2O3 layer, broadening the options for fabricating heterojunctions and promoting their applications in optoelectronic devices.

Plasmon induced enhancement of surface optical phonon modes and magnon properties of NiO nanoparticles: Raman spectral probe

In the present work, the influence of Ag-induced plasmons on the surface optical (SO) phonon modes of NiO nanoparticles was extensively studied using room temperature Raman spectroscopy. Remarkable intensity enhancements were observed for the rarely reported SO phonon modes compared to the other first-order phonon modes of NiO nanoparticles. The occurrence of SO modes was further studied using an approximate dielectric continuum (DC) model and a difference between the calculated and experimental SO frequencies was observed, which can be attributed to the presence of one magnon background over the first order phonon modes. The experimental and theoretical SO frequencies became closer at higher Ag concentration and the second-order magnon (2M) and phonon bands disappeared in the NiO:Ag samples. The absence of magnon and higher order phonon modes in the NiO:Ag samples indicates changes in the magnetic properties of the nanomaterials, which has been further supported by the vibrating-sample magnetometer (VSM) measurements.

Nanowire Electronics: From Nanoscale to Macroscale

Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.

A Raman spectral probe on polar w-ZnS nanostructures and surface optical phonon modes in nanowires

In the present study, different morphologies of ZnS nanostructures have been synthesized through a hydrothermal method and their Raman spectral modes are investigated. Raman scattering from surface optical (SO) modes has been seen and identified as a strange shoulder band of LO at 340 cm-1 in nanowires (NWs) with a hexagonal wurtzite structure of ZnS in air medium. X-ray diffraction (XRD) and transmission electron microscopy (TEM) techniques have been used to confirm the hexagonal phase and the modulation in the surface during the growth process, which causes the translational symmetry breaking to activate the SO mode. The appearance of a strong SO mode in NWs has been obviously confirmed by the frequency downshift of the SO mode in different dielectric media with dielectric constants ranging from 1 to 2.56. The SO phonon mode shift due to the roughness in the NW faces has been estimated from the wave-vector that activates the SO mode and an approximate dielectric continuum (DC) model has been used to understand the SO modes in NWs. The surface perturbation responsible for the activation of the SO mode has been estimated and is compared with the surface modulation along the growth axis of the NW from the TEM images.

Erasable memory properties of spectral selectivity modulated by temperature and bias in an individual CdS nanobelt-based photodetector

Single CdS nanobelt-based photodetectors are strongly dependent on bias and temperature. They not only show a strong photoresponse to close bandgap energy light with ultrahigh responsivity of approximately 10⁷ A W^-1, large photo-to-dark current ratio of 10⁴, photoconductive gain of 10⁷, and fast response and recovery speed at a large bias of 20 V, but can also show a weak photoresponse to above- and below-bandgap energy light. Moreover, their spectral response range can show tunable selectivity to above- and below-bandgap light, which can be accurately controlled by temperature and bias. More importantly, the modulated spectral response characteristics show excellent memory behaviour after reversible writing and erasing by using temperature and bias. In nanostructures, abundant surface states and stacking fault-related traps play a vital role in the ultrahigh photoresponse to bandgap light and the erasable memory effect on spectral response range selectivity. Given the erasable memory of the spectral response selectivity with excellent photoconduction performance, the CdS NBs possess important applications in new-generation photodetection and photomemory devices.

One-dimensional nanostructures of II-VI ternary alloys: synthesis, optical properties, and applications

One-dimensional (1D) nanostructures of II-VI ternary alloys are of prime interest due to their compatible features of both 1D nanostructures and semiconducting alloys. These features can facilitate materials with tunable bandgaps, which are crucial to the performance of photoelectrical devices. Herein, we present a comprehensive review summarizing the recent research progress pertinent to the diverse synthesis, optical fundamentals and applications of 1D nanostructures of II-VI ternary alloys. Considering multifunctional applications, the different growth mechanisms of the rational design and synthesis techniques are highlighted. Investigations of the fundamentals of the optical and photoelectrical properties of ternary alloyed II-VI semiconductors via the corresponding characterization techniques are also particularly discussed. Furthermore, we present the versatile potential practical applications of these materials. Finally, we extend the discussion to the most recent research advances on quaternary alloys, which provides a possible prospective forecast for the sustained development of alloyed 1D nanostructures.

Role of Ni2+(d8) ions in electrical, optical and magnetic properties of CdS nanowires for optoelectronic and spintronic applications

For the first time, 1D Ni ion doped CdS nanowires (NWs) were synthesized via chemical vapour deposition (CVD). The synthesized Cd_0.886Ni_0.114S NWs were single crystalline. We have reported here the investigation of optical, electrical and magnetic properties of prepared NWs for optoelectronic and spintronic applications. Successful incorporation of Ni ions in an individual CdS NW has been confirmed through several characterization tools: significantly higher angle and phonon mode shift were observed in the XRD and Raman spectra. SEM-EDX and XPS analysis also confirmed the presence of Ni²⁺ ions. Room temperature photoluminescence (RT-PL) showed multiple peaks: two emission peaks in the visible region centered at 517.1 nm (green), 579.2 nm (orange), and a broad-band near infra-red (NIR) emission centered at 759.9 nm. The first peak showed 5 nm red shift upon Ni²⁺ doping, hinting at the formation of exciton magnetic polarons (EMPs), and broad NIR emission was observed in both chlorides and bromides, which was assigned to d-d transition of Ni ions whose energy levels lying at 749.51 nm (13 342 cm^-1) and 750.98 nm (13 316 cm^-1) are very close to NIR emission. Orange emission not only remained at same peak position-its PL intensity was also significantly enhanced at 78 K; this was assigned to d-d transition (³A_2g → ¹E_g) of Ni²⁺ ions. It was observed that 11.4% Ni²⁺ ion doping enhanced the conductivity of our sample around 20 times, and saturation magnetization (M_s) increased from 7.2 × 10^-5 Am²/Kg to 1.17 × 10^-4 Am²/Kg, which shows promise for optoelectronic and spintronic applications.

Laser-activated gold catalysts for liquid-phase growth of cadmium selenide nanowires

A laser-activated-catalyst (LAC) technique was developed to grow CdSe nanowires in liquid medium at room temperature. The gold catalysts dispersed in the precursor solution were activated by a pulsed laser so as to decompose the precursor and catalyse the nanowire growth simultaneously. The LAC technique can achieve accurate positioning of nanowires, which is beneficial for device fabrication.

One-pot, template-free synthesis of hydrophobic single-crystalline La(OH)3 nanowires with tunable size and their d0 ferromagnetic properties

Hydrophobic single-crystalline La(OH)₃ nanowires with tunable size have been fabricated by a facile one-pot liquid–solid-solution (LSS) assisted hydrothermal method without any template and their morphology, chemistry and crystal structure were characterized at nanoscale.

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal-semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm-3 and an electron mobility of 215.25 cm2 V-1 s-1. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 104 A W-1), and quantum efficiency (1.96 × 106%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain.

Graphene plasmon enhanced photoluminescence in ZnO microwires

We report the temperature dependent photoluminescence (PL) properties of monolayer graphene-Au-nanoparticle-ZnO (GAZ) microwire hybrid structures. By comparing with the bare ZnO wire without coverage of graphene, a three times enhancement of PL was found in the GAZ hybrid structures. The enhancement is attributed to the coupling between the PL photons from ZnO and the graphene surface plasmons with ~1-2 nm Au as a corrugated surface. Our results may be valuable for designing graphene-ZnO hybrid based optical and photoelectrical devices.

One-dimensional CdS nanostructures: a promising candidate for optoelectronics

As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted.

Silica-coated and annealed CdS nanowires with enhanced photoluminescence

The CdS/SiO(2) core/shell nanowires (NWs) with controlled shell thickness were successfully synthesized and subsequently heat-treated at 500 °C. The influences of silica shell coating and annealing processes on their optical properties have been investigated. Compared with original CdS NWs, the annealed CdS/SiO(2) NWs exhibited an enhanced band-edge emission with slowed photoluminescence lifetime, while the intensity of defect emission decreased. The results were ascribed to the surface passivation and recrystallization by shell coating and annealing. We believe our finding would help improving the optical properties of semiconductor NWs, and facilitate its applications in various realms, such as nanoscale emitter, sensor, and photoelectric device.

Surface depletion induced quantum confinement in CdS nanobelts

We investigate the surface depletion induced quantum confinement in CdS nanobelts beyond the quantum confinement regime, where the thickness is much larger than the bulk exciton Bohr radius. From room temperature to 77 K, the emission energy of free exciton A scales linearly versus 1/L(2) when the thickness L is less than 100 nm, while a deviation occurs for those belts thicker than 100 nm due to the reabsorption effect. The 1/L(2) dependence can be explained by the surface depletion induced quantum confinement, which modifies the confinement potential leading to a quasi-square potential well smaller than the geometric thickness of nanobelts, giving rise to the confinement effect to exciton emission beyond the quantum confinement regime. The surface depletion is sensitive to carrier concentration and surface states. As the temperature decreases, the decrease of the electrostatic potential drop in the surface depletion region leads to a weaker confinement due to the decrease of carrier concentration. With a layer of polymethyl methacrylate (PMMA) passivation, PL spectra exhibit pronounced red shifts due to the decrease of the surface states at room temperature. No shift is found at 10 K both with or without PMMA passivation, suggesting a much weaker depletion field due to the freezing-out of donors.

Electric-field-dependent photoconductivity in CdS nanowires and nanobelts: exciton ionization, Franz-Keldysh, and Stark effects

We report on the electric-field-dependent photoconductivity (PC) near the band-edge region of individual CdS nanowires and nanobelts. The quasi-periodic oscillations above the band edge in nanowires and nanobelts have been attributed to a Franz-Keldesh effect. The exciton peaks in PC spectra of the nanowires and thinner nanobelts show pronounced red-shifting due to the Stark effect as the electric field increases, while the exciton ionization is mainly facilitated by strong electron-longitudinal optical (LO) phonon coupling. However, the band-edge transition of thick nanobelts blue-shifts due to the field-enhanced exciton ionization, suggesting partial exciton ionization as the electron-LO phonon coupling is suppressed in the thicker belts. Large Stark shifts, up to 48 meV in the nanowire and 12 meV in the thinner nanobelts, have been achieved with a moderate electric field on the order of kV/cm, indicating a strong size and dimensionality implication due to confinement and surface depletion.

Incommensurate van der Waals epitaxy of nanowire arrays: a case study with ZnO on muscovite mica substrates

The requirement of lattice matching between a material and its substrate for the growth of defect-free heteroepitaxial crystals can be circumvented with van der Waals epitaxy (vdWE). However, the utilization and characteristics of vdWE in nonlamellar/nonplanar nanoarchitectures are still not very well-documented. Here we establish the characteristics of vdWE in nanoarchitectures using a case study of ZnO nanowire (NW) array on muscovite mica substrate without any buffer/seed layer. With extensive characterizations involving electron microscopy, diffractometry, and the related analyses, we conclude that the NWs grown via vdWE exhibit an incommensurate epitaxy. The incommensurate vdWE allows a nearly complete lattice relaxation at the NW-substrate heterointerface without any defects, thus explaining the unnecessity of lattice matching for well-crystallized epitaxial NWs on muscovite mica. We then determine the polarity of the NW via a direct visualization of Zn-O dumbbells using the annular bright field scanning transmission electron miscroscopy (ABF-STEM) in order to identify which atoms are at the base of the NWs and responsible for the van der Waals interactions. The information from the ABF-STEM is then used to construct the proper atomic arrangement at the heterointerface with a 3D atomic modeling to corroborate the characteristics of the incommensurate vdWE. Our findings suggest that the vdWE might be extended for a wider varieties of compounds and epitaxial nanoarchitectures to serve as a universal epitaxy strategy.

Epitaxial II-VI tripod nanocrystals: a generalization of van der Waals epitaxy for nonplanar polytypic nanoarchitectures

We report for the first time the synthesis of nonplanar epitaxial tripod nanocrystals of II-VI compounds (ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe) on muscovite mica substrate. With CdS as a case study, we conclude via Raman spectroscopy and electron microscopy studies that the tripods, which are found to be polytypic, followed a seeded growth mechanism. The epitaxy, manifested by the in-plane alignment of the legs of the tripods within a substrate, is attributed to the van der Waals interaction between the tripod bases and the mica surface, instead of to the covalent chemical bond which would require lattice matching between the epilayer and the substrate. The results demonstrated herein could have widespread immediate implications, including the potential of van der Waals epitaxy to be applicable in producing ordered arrays of more complex nanoarchitectures from various classes of compounds toward a broad range of technological applications.