Reductive Aromatization/Dearomatization and Elimination Reactions to Access Conjugated Polycyclic Hydrocarbons, Heteroacenes, and Cumulenes

Acenes, heteroacenes, conjugated polycyclic hydrocarbons, and polycyclic aromatic hydrocarbons (collectively referred to in this review as conjugated polycyclic molecules, CPMs) have fascinated chemists since they were first isolated and synthesized in the mid 19th century. Most recently, these compounds have shown significant promise as the active components in organic devices (e.g., solar cells, thin-film transistors, light-emitting diodes, etc.), and, since 2001, a plethora of publications detail synthetic strategies to produce CPMs. In this review, we discuss reductive aromatization, reductive dearomatization, and elimination/extrusion reactions used to form CPMs. After a brief discussion on early methods to synthesize CPMs, we detail the use of reagents used for the reductive (de)aromatization of precursors containing 1,4-diols/diethers, including SnCl₂ and iodide (I^- ). Extension of these methods to carbomers and cumulenes is briefly discussed. We then describe low-valent metal species used to reduce endoxides to CPMs, and discuss the methods to directly reduce acenediones and acenones to the respective acene. In the final section, we describe methods used to affect aromatization to the desired CPM via extrusion of small, volatile molecules.

Direct laser writing of air-stable p-n junctions in graphene

Photo-oxidation of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene has been exploited to develop a novel means of spatially modulating doping in graphene. The degree of n-doping of initially p-type graphene can be varied by laser irradiation time or intensity with carrier density change up to ∼7 × 10(12) cm(-2). This n-doping approach is demonstrated as an effective means of creating p-n junctions in graphene. The ability to direct-write arbitrary shapes and patterns of n-doped regions in graphene simply by scanning a laser source should facilitate the exploitation of p-n junctions for a variety of electronic and optoelectronic device applications.