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Ojha GP, Kang GW, Kuk YS, Hwang YE, Kwon OH, Pant B, Acharya J, Park YW, Park M. Silicon Carbide Nanostructures as Potential Carbide Material for Electrochemical Supercapacitors: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:150. [PMID: 36616060 PMCID: PMC9824291 DOI: 10.3390/nano13010150] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/18/2022] [Accepted: 12/25/2022] [Indexed: 06/17/2023]
Abstract
Silicon carbide (SiC) is a very promising carbide material with various applications such as electrochemical supercapacitors, photocatalysis, microwave absorption, field-effect transistors, and sensors. Due to its enticing advantages of high thermal stability, outstanding chemical stability, high thermal conductivity, and excellent mechanical behavior, it is used as a potential candidate in various fields such as supercapacitors, water-splitting, photocatalysis, biomedical, sensors, and so on. This review mainly describes the various synthesis techniques of nanostructured SiC (0D, 1D, 2D, and 3D) and its properties. Thereafter, the ongoing research trends in electrochemical supercapacitor electrodes are fully excavated. Finally, the outlook of future research directions, key obstacles, and possible solutions are emphasized.
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Affiliation(s)
- Gunendra Prasad Ojha
- Carbon Composite Energy Nanomaterials Research Center, Woosuk University, Wanju-Gun, Chonbuk 55338, Republic of Korea
- Woosuk Institute of Smart Convergence Life Care (WSCLC), Woosuk University, Wanju, Chonbuk 55338, Republic of Korea
| | - Gun Woong Kang
- Research and Development Division, Korea Institute of Convergence Textile, Iksan, Chonbuk 54588, Republic of Korea
| | - Yun-Su Kuk
- Convergence Research Division, Korea Carbon Industry Promotion Agency (KCARBON), Jeonju, Chonbuk 54853, Republic of Korea
| | - Ye Eun Hwang
- Research and Development Division, Korea Institute of Convergence Textile, Iksan, Chonbuk 54588, Republic of Korea
| | - Oh Hoon Kwon
- Research and Development Division, Korea Institute of Convergence Textile, Iksan, Chonbuk 54588, Republic of Korea
| | - Bishweshwar Pant
- Carbon Composite Energy Nanomaterials Research Center, Woosuk University, Wanju-Gun, Chonbuk 55338, Republic of Korea
- Woosuk Institute of Smart Convergence Life Care (WSCLC), Woosuk University, Wanju, Chonbuk 55338, Republic of Korea
| | - Jiwan Acharya
- Carbon Composite Energy Nanomaterials Research Center, Woosuk University, Wanju-Gun, Chonbuk 55338, Republic of Korea
- Woosuk Institute of Smart Convergence Life Care (WSCLC), Woosuk University, Wanju, Chonbuk 55338, Republic of Korea
| | - Yong Wan Park
- Research and Development Division, Korea Institute of Convergence Textile, Iksan, Chonbuk 54588, Republic of Korea
| | - Mira Park
- Carbon Composite Energy Nanomaterials Research Center, Woosuk University, Wanju-Gun, Chonbuk 55338, Republic of Korea
- Woosuk Institute of Smart Convergence Life Care (WSCLC), Woosuk University, Wanju, Chonbuk 55338, Republic of Korea
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Xie X, Su Z, Huang D, Yang C, Wang Y, He K, Huang Q. Effect of carbon nanotexture on the synthesis, initial growth mechanism and photoluminescence properties of SiC nanowires. NANOTECHNOLOGY 2021; 32:085601. [PMID: 33166948 DOI: 10.1088/1361-6528/abc8b4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Although the spontaneous vapor-solid growth of SiC nanowires is a well-established phenomenon, the exact mechanism by which nanowires grow on substrates is still poorly understood. Here, we studied the initial growth of SiC nanowires on carbon sources with different nanotextures via a catalyst-free vapor reaction between a polyacrylonitrile-based carbon fiber and a silicon powder. The results revealed that the SiC nanowires were preferentially formed on the carbon fiber with a higher degree of graphitization. Detailed analyses suggested that the growth behavior of the underlying SiC film formed on the carbon fibers, which is strongly affected by the microstructures of the carbon fibers, plays an important role in the formation of nanowires. In addition, the photoluminescence spectrum of SiC nanowires showed strong ultraviolet-visible emission peaks at an excitation wavelength of 250 nm, which may provide potential applications in the field of optoelectronic devices.
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Affiliation(s)
- Xiangmin Xie
- National Key Laboratory of Science and Technology for National Defence on High-strength Structural Materials, Central South University, Changsha 410083, People's Republic of China
| | - Zhe'an Su
- National Key Laboratory of Science and Technology for National Defence on High-strength Structural Materials, Central South University, Changsha 410083, People's Republic of China
| | - Dong Huang
- Hunan Province Engineering Research Center for High Performance Pitch Based Carbon Materials, Hunan Toyi Carbon Material Technology Co., Ltd, Changsha 410205, People's Republic of China
| | - Cheng Yang
- National Key Laboratory of Science and Technology for National Defence on High-strength Structural Materials, Central South University, Changsha 410083, People's Republic of China
| | - Yafeng Wang
- National Key Laboratory of Science and Technology for National Defence on High-strength Structural Materials, Central South University, Changsha 410083, People's Republic of China
| | - Kejian He
- Advanced Research Center, Central South University, Changsha 410083, People's Republic of China
| | - Qizhong Huang
- National Key Laboratory of Science and Technology for National Defence on High-strength Structural Materials, Central South University, Changsha 410083, People's Republic of China
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Pham T, Qamar A, Dinh T, Masud MK, Rais‐Zadeh M, Senesky DG, Yamauchi Y, Nguyen N, Phan H. Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001294. [PMID: 33173726 PMCID: PMC7640356 DOI: 10.1002/advs.202001294] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2020] [Revised: 06/08/2020] [Indexed: 05/05/2023]
Abstract
Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III-nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom-up and top-down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast-emerging research field.
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Affiliation(s)
- Tuan‐Anh Pham
- Queensland Micro and Nanotechnology CentreGriffith UniversityNathanQLD4111Australia
| | - Afzaal Qamar
- Electrical Engineering DepartmentUniversity of MichiganAnn ArborMI48109USA
| | - Toan Dinh
- Queensland Micro and Nanotechnology CentreGriffith UniversityNathanQLD4111Australia
- Department of Mechanical EngineeringUniversity of Southern QueenslandSpringfieldQLD4300Australia
| | - Mostafa Kamal Masud
- Australian Institute of Bioengineering and NanotechnologyThe University of QueenslandSt LuciaQLD4072Australia
| | - Mina Rais‐Zadeh
- Electrical Engineering DepartmentUniversity of MichiganAnn ArborMI48109USA
- NASA JPLCalifornia Institute of TechnologyPasadenaCA91109USA
| | - Debbie G. Senesky
- Department of Aeronautics and AstronauticsStanford UniversityStanfordCA94305USA
| | - Yusuke Yamauchi
- Australian Institute of Bioengineering and NanotechnologyThe University of QueenslandSt LuciaQLD4072Australia
| | - Nam‐Trung Nguyen
- Queensland Micro and Nanotechnology CentreGriffith UniversityNathanQLD4111Australia
| | - Hoang‐Phuong Phan
- Queensland Micro and Nanotechnology CentreGriffith UniversityNathanQLD4111Australia
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Khan A, Huang K, Hu M, Yu X, Yang D. Wetting Behavior of Metal-Catalyzed Chemical Vapor Deposition-Grown One-Dimensional Cubic-SiC Nanostructures. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2018; 34:5214-5224. [PMID: 29656649 DOI: 10.1021/acs.langmuir.8b00238] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Superhydrophobic surfaces can be fabricated by using the self-assembled nanoarchitecture of 3C-SiC one-dimensional (1D) nanostructures as they are capable of forming a dense network of micro-nano air pockets without any help from external sources. Herein, the metal-catalyzed growth of 3C-SiC nanowires/nanorods on Si substrates via vapor-liquid-solid mechanism using five different catalysts, that is, chemically synthesized Au nanoparticles and direct current-sputtered thin films of Au, Cu, Ni, and Ti, is reported. Relatively new or unexplored catalysts such as thin films of Cu and Ti, as well as drop-cast Au nanoparticles, were used. An optimized and separate growth was carried out for each catalyst in an inductively heated horizontal cold-wall atmospheric pressure chemical vapor deposition reactor. An insight into the catalytic growth mechanism of 3C-SiC 1D nanostructures has been presented. All of the bare samples exhibited superhydrophilic behavior, whereas hierarchical Au/Pd nanostructure-coated 3C-SiC nanorod samples grown using Au and Ni thin-film catalysts exhibited hydrophobic and superhydrophobic behavior, respectively. As the better results were obtained for Ni thin-film catalysts in terms of growth density and high water contact angle (WCA ≈ 160°), therefore, the growth temperature, as well as the growth time-dependent wetting behavior, was also studied. It was found that the WCA increased as the growth time and temperature increased because of the increase in the growth density, and it finally reached to an optimum value at the growth temperature of 1200 °C and the growth time of 1 h. Furthermore, their wetting behavior was studied by using a variety of high surface tension (water, milk, tea, and glycerin) and low surface tension (organic liquids such as n-hexane, ethanol, etc.) liquids. High surface tension liquids exhibited superhydrophobic behavior, whereas low surface tension liquids exhibited superhydrophilic behavior. Hence, these fabricated nanostructured surfaces can be exploited for oil-water separation, electrowetting, water harvesting, self-cleaning, lab on a chip, and micro-/nanofluidic device applications.
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Affiliation(s)
- Afzal Khan
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering , Zhejiang University , Hangzhou 310027 , China
- Materials Science Centre , Indian Institute of Technology Kharagpur , Kharagpur , West Bengal 721302 , India
| | - Kun Huang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering , Zhejiang University , Hangzhou 310027 , China
| | - Ming Hu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering , Zhejiang University , Hangzhou 310027 , China
| | - Xuegong Yu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering , Zhejiang University , Hangzhou 310027 , China
| | - Deren Yang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering , Zhejiang University , Hangzhou 310027 , China
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Yu H, Ren X, Huang Y, Luo H, Yang L, Dai B, Zhu J, Han J. The controllable growth of superhydrophobic SiC nanowires by tailoring the cooling rate. CrystEngComm 2018. [DOI: 10.1039/c8ce01341a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In the present work, we report the controlled growth of SiC nanowires on a silicon substrate by tailoring the cooling rate of a catalyst-assisted method. The SiC nanowire film obtained at the fast cooling rate exhibited excellent superhydrophobicity with a water contact angle up to 150° without any surface functionalization.
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Affiliation(s)
- Hailing Yu
- Guangdong Provincial Engineering Research Center of Molecular Imaging
- The Fifth Affiliated Hospital
- Sun Yat-sen University
- Zhuhai
- P. R. China
| | - Xiaoshuai Ren
- Guangdong Provincial Engineering Research Center of Molecular Imaging
- The Fifth Affiliated Hospital
- Sun Yat-sen University
- Zhuhai
- P. R. China
| | - Yongquan Huang
- Guangdong Provincial Engineering Research Center of Molecular Imaging
- The Fifth Affiliated Hospital
- Sun Yat-sen University
- Zhuhai
- P. R. China
| | - Hui Luo
- Guangdong Provincial Engineering Research Center of Molecular Imaging
- The Fifth Affiliated Hospital
- Sun Yat-sen University
- Zhuhai
- P. R. China
| | - Lei Yang
- Center for Composite Materials and Structures
- Harbin Institute of Technology
- Harbin 150080
- P. R. China
| | - Bing Dai
- Center for Composite Materials and Structures
- Harbin Institute of Technology
- Harbin 150080
- P. R. China
| | - Jiaqi Zhu
- Center for Composite Materials and Structures
- Harbin Institute of Technology
- Harbin 150080
- P. R. China
| | - Jiecai Han
- Center for Composite Materials and Structures
- Harbin Institute of Technology
- Harbin 150080
- P. R. China
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Wang L, Wei G, Gao F, Li C, Yang W. High-temperature stable field emission of B-doped SiC nanoneedle arrays. NANOSCALE 2015; 7:7585-7592. [PMID: 25873281 DOI: 10.1039/c5nr00952a] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Current emission stability is one of the key issues for field emitters for them to be practically applied as electron sources. In the present work, large-scale and well-aligned B-doped SiC nanoneedle arrays have been grown on 6H-SiC wafer substrates via pyrolysis of polymeric precursors. The measured field emission (FE) characteristics suggest that the turn-on fields of the as-synthesized SiC nanoneedle arrays are reduced from 1.92 to 0.98 V μm(-1) with temperature increasing from room temperature (RT) to 500 °C, suggesting their excellent FE performances. The slightly changed current fluctuations (only ∼1.3%) between RT and 200 °C confirm that the present SiC nanoarrays with B dopants could be highly stable field emitters to be used in service under harsh conditions of high temperatures.
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Affiliation(s)
- Lin Wang
- School of Materials Science and Engineering, University of Science & Technology Beijing, Beijing City, 100083, P.R. China.
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Wang L, Li C, Yang Y, Chen S, Gao F, Wei G, Yang W. Large-scale growth of well-aligned SiC tower-like nanowire arrays and their field emission properties. ACS APPLIED MATERIALS & INTERFACES 2015; 7:526-533. [PMID: 25495056 DOI: 10.1021/am506678x] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Fabrication of well-aligned one-dimensional (1D) nanostrucutres is critically important and highly desired since it is the key step to realize the patterned arrays to be used as the display units. In the present work, we report the large-scale and well-aligned growth of n-type SiC nanowire arrays on the 6H-SiC wafer substrates via pyrolysis of polymeric precursors assisted by Au catalysts. The obtained n-type SiC nanowires are highly qualified with sharp tips and numerous sharp corners around the wire bodies, which bring the emitters excellent field emission (FE) performance with low turn-on fields (1.50 V/μm), low threshold fields (2.65 V/μm), and good current emission stabilities (fluctuation <3.8%). The work abilities of the n-type SiC tower-like nanowire arrays under high-temperature harsh environments have been investigated, suggesting that the resultant field emitters could be well serviced up to 500 °C. The temperature-enhanced FE behaviors could be attributed to the reduction of the work function induced by the rise of temperatures and the incorporated N dopants. It is believed that the present well-aligned n-type SiC tower-like nanowire arrays could meet nearly all stringent requirements for an ideal FE emitter with excellent FE properties, making their applications very promising in displays and other electronic nanodevices.
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Affiliation(s)
- Lin Wang
- School of Materials Science and Engineering, University of Science & Technology Beijing , Beijing City, 100083, P.R. China
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Hu P, Dong S, Gui K, Deng X, Zhang X. Ultra-long SiC nanowires synthesized by a simple method. RSC Adv 2015. [DOI: 10.1039/c5ra12332a] [Citation(s) in RCA: 32] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Ultra-long SiC nanowires synthesized by alumina-assisted growth of the vapor–solid (VS) mechanism.
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Affiliation(s)
- Ping Hu
- Science and Technology on Advanced Composites in Special Environment Laboratory
- Harbin Institute of Technology
- Harbin 150001
- PR China
| | - Shun Dong
- Science and Technology on Advanced Composites in Special Environment Laboratory
- Harbin Institute of Technology
- Harbin 150001
- PR China
| | - Kaixuan Gui
- Science and Technology on Advanced Composites in Special Environment Laboratory
- Harbin Institute of Technology
- Harbin 150001
- PR China
| | - Xianzhu Deng
- Science and Technology on Advanced Composites in Special Environment Laboratory
- Harbin Institute of Technology
- Harbin 150001
- PR China
| | - Xinghong Zhang
- Science and Technology on Advanced Composites in Special Environment Laboratory
- Harbin Institute of Technology
- Harbin 150001
- PR China
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Chen S, Ying P, Wang L, Gao F, Wei G, Zheng J, Xie Z, Yang W. Controlled growth of SiC flexible field emitters with clear and sharp tips. RSC Adv 2014. [DOI: 10.1039/c3ra46982d] [Citation(s) in RCA: 34] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We report the controlled growth of 3C-SiC flexible field emitters with clear and sharp tips based on the VLS mechanism.
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Affiliation(s)
- Shanliang Chen
- School of Chemical Engineering and Technology
- China University of Mining and Technology
- Xuzhou, P.R. China
- School of Material Science and Engineering
- China University of Mining and Technology
| | - Pengzhan Ying
- School of Material Science and Engineering
- China University of Mining and Technology
- Xuzhou, P.R. China
| | - Lin Wang
- Institute of Materials
- Ningbo University of Technology
- Ningbo, P.R. China
| | - Fengmei Gao
- Institute of Materials
- Ningbo University of Technology
- Ningbo, P.R. China
| | - Guodong Wei
- Institute of Materials
- Ningbo University of Technology
- Ningbo, P.R. China
| | - Jinju Zheng
- Institute of Materials
- Ningbo University of Technology
- Ningbo, P.R. China
| | - Zhipeng Xie
- State Key Laboratory of New Ceramics and Fine Processing
- Department of Materials Science and Engineering
- Tsinghua University
- Beijing, China
| | - Weiyou Yang
- Institute of Materials
- Ningbo University of Technology
- Ningbo, P.R. China
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Huang Z, Liu H, Chen K, Fang M, Huang J, Liu S, Huang S, Liu YG, Wu X. Synthesis and formation mechanism of twinned SiC nanowires made by a catalyst-free thermal chemical vapour deposition method. RSC Adv 2014. [DOI: 10.1039/c4ra00073k] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Twinned SiC nanowires were prepared on a silicon wafer by a simple catalyst-free thermal chemical vapour deposition (CVD) method.
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Affiliation(s)
- Zhaohui Huang
- School of Materials Science and Technology
- China University of Geosciences (Beijing)
- Beijing 100083, P.R. China
| | - Haitao Liu
- School of Materials Science and Technology
- China University of Geosciences (Beijing)
- Beijing 100083, P.R. China
| | - Kai Chen
- School of Materials Science and Technology
- China University of Geosciences (Beijing)
- Beijing 100083, P.R. China
| | - Minghao Fang
- School of Materials Science and Technology
- China University of Geosciences (Beijing)
- Beijing 100083, P.R. China
| | - Juntong Huang
- School of Materials Science and Technology
- China University of Geosciences (Beijing)
- Beijing 100083, P.R. China
| | - Shuyue Liu
- School of Materials Science and Technology
- China University of Geosciences (Beijing)
- Beijing 100083, P.R. China
| | - Saifang Huang
- School of Materials Science and Technology
- China University of Geosciences (Beijing)
- Beijing 100083, P.R. China
| | - Yan-gai Liu
- School of Materials Science and Technology
- China University of Geosciences (Beijing)
- Beijing 100083, P.R. China
| | - Xiaowen Wu
- School of Materials Science and Technology
- China University of Geosciences (Beijing)
- Beijing 100083, P.R. China
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Wu R, Zhou K, Yang Z, Qian X, Wei J, Liu L, Huang Y, Kong L, Wang L. Molten-salt-mediated synthesis of SiC nanowires for microwave absorption applications. CrystEngComm 2013. [DOI: 10.1039/c2ce26510a] [Citation(s) in RCA: 167] [Impact Index Per Article: 15.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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