Intense Pulsed Light Thermal Treatment of Pb(Zr,Ti)O3 /Metglas Heterostructured Films Resulting in Extreme Magnetoelectric Coupling of over 20 V cm-1 Oe-1

Magnetoelectric (ME) film composites consisting of piezoelectric and magnetostrictive materials are promising candidates for application in magnetic field sensors, energy harvesters, and ME antennas. Conventionally, high-temperature annealing is required to crystallize piezoelectric films, restricting the use of heat-sensitive magnetostrictive substrates that enhance ME coupling. Herein, a synergetic approach is demonstrated for fabricating ME film composites that combines aerosol deposition and instantaneous thermal treatment based on intense pulsed light (IPL) radiation to form piezoelectric Pb(Zr,Ti)O3 (PZT) thick films on an amorphous Metglas substrate. IPL rapidly anneals PZT films within a few milliseconds without damaging the underlying Metglas. To optimize the IPL irradiation conditions, the temperature distribution inside the PZT/Metglas film is determined using transient photothermal computational simulation. The PZT/Metglas films are annealed using different IPL pulse durations to determine the structure-property relationship. IPL treatment results in an enhanced crystallinity of the PZT, thus improving the dielectric, piezoelectric, and ME properties of the composite films. An ultrahigh off-resonance ME coupling (≈20 V cm-1  Oe-1 ) is obtained for the PZT/Metglas film that is IPL annealed at a pulse width of 0.75 ms (an order of magnitude higher than that reported for other ME films), confirming the potential for next-generation, miniaturized, and high-performance ME devices.

Interfacial phenomena in nanocapacitors with multifunctional oxides

The analysis of the structure, chemical stability, electronic and ferroelectric properties of the interfaces between Pt(001) and PbZrTiO₃(001) have been performed with ab initio methods. We show that the chemical environment plays a critical role in determining the interfacial reconstruction and charge redistribution at the metal/oxide interfaces. We demonstrate that the difference in interfacial bonds formed at the Pt/PZT interfaces with (TiZr)O₂- and PbO-termination of PZT essentially defines the effectiveness of the screening, and ease of polarisation switching in PZT-based capacitors.

Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles

We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe <100 nm of PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

CMOS-compatible optical switching concept based on strain-induced refractive-index tuning

In this paper we present a planar lightwave switching mechanism based on large refractive index variations induced by electrically-driven strain control in a CMOS-compatible photonic platform. Feasibility of the proposed concept, having general validity, is numerically analyzed in a specific case-study given by a Mach-Zehnder Interferometer with Ge waveguides topped by a piezoelectric stressor. The stressor can be operated in order to dynamically tune the strain into the two interferometric arms. The strain modifies the Ge band structure and can induce refractive index variations up to 0.05. We demonstrate that this approach can enable ultra-compact devices featuring low loss propagation for light wavelengths below the waveguide band gap energy, high extinction ratios (>30 dB) and low intrinsic insertion losses (2 dB). The operation wavelength can be extended in the whole FIR spectrum by using SiGe(Sn) alloy waveguides.