Linkage effect on the memory behavior of sulfonyl-containing aromatic polyether, polyester, polyamide, and polyimide

Functional Aromatic Polyamides

We describe herein the state of the art following the last 8 years of research into aromatic polyamides, wholly aromatic polyamides or aramids. These polymers belong to the family of high performance materials because of their exceptional thermal and mechanical behavior. Commercially, they have been transformed into fibers mainly for production of advanced composites, paper, and cut and fire protective garments. Huge research efforts have been carried out to take advantage of the mentioned characteristics in advanced fields related to transport applications, optically active materials, electroactive materials, smart materials, or materials with even better mechanical and thermal behavior.

Direct synthesis of triphenylamine-containing polyarylsulfones from commercially available aniline

A novel triphenylamine-containing polyarylsulfone (PAS-TPA) was synthesized from commercially available aniline and 1,1′-sulfonylbis(4-fluorobenzene) via two-step N–C coupling reaction under nucleophilic substitution polycondensation condition. Subsequently, a new series of polysulfones with different TPA contents (PSU-TPAs) was developed by the same method. Both PAS-TPA and PSU-TPAs not only exhibited good thermal stability and solubility but also exhibited intense ultraviolet absorption and fluorescence and high fluorescence quantum yield (approximately 16–42%). Their ideal highest occupied molecular orbital level (approximately −5.5 to −5.6) indicated the potential application of these polymers in organic photoelectronic fields.

Linkage and donor–acceptor effects on resistive switching memory devices of 4-(N-carbazolyl)triphenylamine-based polymers

In order to gain deeper insight about the linkage effect and donor–acceptor effect on memory behavior (from DRAM to WORM), 4-(N-carbazolyl)triphenylamine-based polyimides and polyamides were synthesized and their memory behaviours were investigated.

Design and synthesis of hyperbranched polyimide containing multi-triphenylamine moieties for memory devices

A hyperbranched polyimide (HBPI) was synthesized from a designed triamine monomer and the HBPI based memory device presented SRAM (static random access memory) behavior with a low switch voltage and high ON/OFF current ratio.

Zinc and linkage effects of novel porphyrin-containing polyimides on resistor memory behaviors

The retention time of resistor type memory devices could be tuned by the linkage groups between porphyrin moiety and DSDA on the PIs. Moreover, the metal zinc also plays an important role in further tuning the memory behavior.

Organic Electronic Memory Devices

With the rapid development of the electronics industry in recent years, information technology devices, such as personal computers, mobile phones, digital cameras and media players, have become an essential part of our daily life. From both the technological and economic points of view, the development of novel information storage materials and devices has become an emergent issue facing the electronics industry. Due to the advantages of good scalability, flexibility, low cost, ease of processing, 3D-stacking capability and high capacity for data storage, organic-based electrical memory devices have been promising alternatives or supplementary devices to conventional inorganic semiconductor-based memory technology. The basic concepts and historical development of electronic memory devices are first presented. The following section introduces the structures and switching mechanisms of organic electronic memory devices classified as transistors, capacitors and resistors. Subsequently, the progress in the field of organic-based memory materials and devices is systematically summarized and discussed. Finally, the challenges posed to the development of novel organic electronic memory devices are summarized.

Side-chain and linkage-mediated effects of anthraquinone moieties on ambipolar poly(triphenylamine)-based volatile polymeric memory devices

Two ambipolar and thermally stable poly(triphenylamine)s with pendent anthraquinone acceptors were readily synthesized and prepared for the investigation of side-chain and linkage-mediated effects on the memory behaviour.

Tuning of resistive memory switching in electropolymerized metallopolymeric films

A diruthenium complex capped with two triphenylamine units was polymerized by electrochemical oxidation to afford metallopolymeric films with alternating diruthenium and tetraphenylbenzidine structures. The obtained thin films feature rich redox processes associated with the reduction of the bridging ligands (tetra(pyrid-2-yl)pyrazine) and the oxidation of the tetraphenylbenzidine and diruthenium segments. The sandwiched ITO/polymer film/Al electrical devices show excellent resistive memory switching with a low operational voltage, large ON/OFF current ratio (100-1000), good stability (500 cycles tested), and long retention time. In stark contrast, devices with polymeric films of a related monoruthenium complex show poor memory performance. The mechanism of the field-induced conductivity of the diruthenium polymer film is rationalized by the formation of a charge transfer state, as supported by DFT calculations.

Electronic effect of terminal acceptor groups on different organic donor–acceptor small-molecule based memory devices

Three conjugated organic donor–acceptor small-molecules BCZ-BT, BCZ-NO2 and BCZ-CN with different electronic effects in their terminal acceptors were designed and synthesized and their application in memory devices with a sandwich configuration was tested.