Probing the valence orbitals of transition metal-silicon diatomic anions: ZrSi, NbSi, MoSi, PdSi and WSi

DAPD Set of Pd-Containing Diatomic Molecules: Accurate Molecular Properties and the Great Lengths to Obtain Them

In the present study, we obtained reliable bond energy, bond length, and zero-point vibrational frequency for a set of diatomic Pd species (the DAPD set). It includes PdH, Pd2, and PdX (X = B, C, N, O, F, Al, Si, P, S, and Cl). Our highest-level protocol (W4X-L) represents scalar and spin-orbit relativistic, valence- and inner-valence correlated, extrapolated CCSDTQ(5) energy. The DAPD set of molecules is challenging for computational chemistry methods in different manners; for Pd2, the spin-orbit contribution to the bond energy is fairly large, whereas for PdC and PdSi, the post-CCSD(T) correlation components are considerable. The diverse range of requirements represents a significant challenge for lower-level methods. While density functional theory (DFT) methods generally yield good agreements for bond lengths and vibrational frequencies, large deviations are found for bond energies. In general, hybrid DFT methods are more accurate than nonhybrid functionals, but the agreement in individual cases varies. This illustrates the critical role that new high-quality reference data would play in the continual development of lower-cost methods.

Electron Detachments of NbSin-/0 (n = 1-3) Clusters from Density Matrix Renormalization Group-CASPT2 Calculations

The electronic states of NbSi_n^-/0/+ (n = 1-3) clusters have been explored using the state-of-the-art DMRG-CASPT2 method with relatively large active spaces. The leading configurations, bond distances, vibrational frequencies, and relative energies of the low-lying states were identified. Electron detachment energies of the anionic cluster and ionization energies of the neutral clusters were reported at the DMRG-CASPT2 level. The ground states of the NbSi_n^-/0/+ (n = 1-3) clusters were predicted as the ³Δ, ⁴Π, and ⁵Π states of the linear NbSi^-/0/+, the ³A₂, ⁴B₁, and ³B₁ states of cyclic NbSi₂^-/0/+, and the ¹A', ²A', and ³A″ states of tetrahedral NbSi₃^-/0/+ isomers. The first feature in the photoelectron spectrum of NbSi^- was attributed to the transitions from the anionic ³Δ ground state to the neutral ⁴Π, ⁴Δ, and ⁴Φ states, whereas the second feature was assigned to the transitions to the neutral ²Δ, ²Σ⁺, and ²Φ states. The first band in the photoelectron spectrum of NbSi₃^- was ascribed to the transition from the anionic ¹A' ground state to the neutral 1²A' and 1²A″ states; the second band was attributed to the transitions to 2²A', 2²A″, and 3²A' states; and the third band was assigned to the transition to 3²A' states.

Multiconfiguration Pair-Density Functional Theory for Transition Metal Silicide Bond Dissociation Energies, Bond Lengths, and State Orderings

Transition metal silicides are promising materials for improved electronic devices, and this motivates achieving a better understanding of transition metal bonds to silicon. Here we model the ground and excited state bond dissociations of VSi, NbSi, and TaSi using a complete active space (CAS) wave function and a separated-pair (SP) wave function combined with two post-self-consistent field techniques: complete active space with perturbation theory at second order and multiconfiguration pair-density functional theory. The SP approximation is a multiconfiguration self-consistent field method with a selection of configurations based on generalized valence bond theory without the perfect pairing approximation. For both CAS and SP, the active-space composition corresponds to the nominal correlated-participating-orbital scheme. The ground state and low-lying excited states are explored to predict the state ordering for each molecule, and potential energy curves are calculated for the ground state to compare to experiment. The experimental bond dissociation energies of the three diatomic molecules are predicted with eight on-top pair-density functionals with a typical error of 0.2 eV for a CAS wave function and a typical error of 0.3 eV for the SP approximation. We also provide a survey of the accuracy achieved by the SP and extended separated-pair approximations for a broader set of 25 transition metal–ligand bond dissociation energies.

Bond dissociation energies of ScSi, YSi, LaSi, ScC, YC, LaC, CoC, and YCH

Predissociation thresholds of the ScSi, YSi, LaSi, ScC, YC, LaC, CoC, and YCH molecules have been measured using resonant two-photon ionization spectroscopy. It is argued that the dense manifold of electronic states present in these molecules causes prompt dissociation when the bond dissociation energy (BDE) is exceeded, allowing their respective predissociation thresholds to provide precise values of their bond energies. The BDEs were measured as 2.015(3) eV (ScSi), 2.450(2) eV (YSi), 2.891(5) eV (LaSi), 3.042(10) eV (ScC), 3.420(3) eV (YC), 4.718(4) eV (LaC), 3.899(13) eV (CoC), and 4.102(3) eV (Y-CH). Using thermochemical cycles, the enthalpies of formation, Δ_fH_0K°(g), were calculated as 627.4(9.0) kJ mol^-1 (ScSi), 633.1(9.0) kJ mol^-1 (YSi), 598.1(9.0) kJ mol^-1 (LaSi), 793.8(4.3) kJ mol^-1 (ScC), 805.0(4.2) kJ mol^-1 (YC), 687.3(4.2) kJ mol^-1 (LaC), 760.1(2.5) kJ mol^-1 (CoC), and 620.8(4.2) kJ mol^-1 (YCH). Using data for the BDEs of the corresponding cations allows ionization energies to be obtained through thermochemical cycles as 6.07(11) eV (ScSi), 6.15(13) eV (YSi), 5.60(10) eV (LaSi), 6.26(6) eV (ScC), 6.73(12) or 5.72(11) eV [YC, depending on the value of D₀(Y⁺-C) employed], and 5.88(35) eV (LaC). Additionally, a new value of D₀(Co⁺-C) = 4.045(13) eV was obtained based on the present work and the previously determined ionization energy of CoC. An ionization onset threshold allowed the measurement of the LaSi ionization energy as 5.607(10) eV, in excellent agreement with a prediction based on a thermochemical cycle. Chemical bonding trends are also discussed.

Study on Structural Evolution, Thermochemistry and Electron Affinity of Neutral, Mono- and Di-Anionic Zirconium-Doped Silicon Clusters ZrSin0/-/2- (n = 6-16)

We have carried out a global search of systematic isomers for the lowest energy of neutral and Zintl anionic Zr-doped Si clusters ZrSi_n^0/-/2- (n = 6–16) by employing the ABCluster global search method combined with the mPW2PLYP double-hybrid density functional. In terms of the evaluated energies, adiabatic electron affinities, vertical detachment energies, and agreement between simulated and experimental photoelectron spectroscopy, the true global minimal structures are confirmed. The results reveal that structural evolution patterns for neutral ZrSi_n clusters prefer the attaching type (n = 6–9) to the half-cage motif (n = 10–13), and finally to a Zr-encapsulated configuration with a Zr atom centered in a Si cage (n = 14–16). For Zintl mono- and di-anionic ZrSi_n^-/2-, their growth patterns adopt the attaching configuration (n = 6–11) to encapsulated shape (n = 12–16). The further analyses of stability and chemical bonding make it known that two extra electrons not only perfect the structure of ZrSi₁₅ but also improve its chemical and thermodynamic stability, making it the most suitable building block for novel multi-functional nanomaterials.

Bond dissociation energies of FeSi, RuSi, OsSi, CoSi, RhSi, IrSi, NiSi, and PtSi

Resonant two-photon ionization spectroscopy has been used to investigate the spectra of the diatomic late transition metal silicides, MSi, M = Fe, Ru, Os, Co, Rh, Ir, Ni, and Pt, in the vicinity of the bond dissociation energy. In these molecules, the density of vibronic states is so large that the spectra appear quasicontinuous in this energy range. When the excitation energy exceeds the ground separated atom limit, however, a new decay process becomes available-molecular dissociation. This occurs so rapidly that the molecule falls apart before it can absorb another photon and be ionized. The result is a sharp drop to the baseline in the ion signal, which we identify as occurring at the thermochemical 0 K bond dissociation energy, D₀. On this basis, the measured predissociation thresholds provide D₀ = 2.402(3), 4.132(3), 4.516(3), 2.862(3), 4.169(3), 4.952(3), 3.324(3), and 5.325(9) eV for FeSi, RuSi, OsSi, CoSi, RhSi, IrSi, NiSi, and PtSi, respectively. Using thermochemical cycles, the enthalpies of formation of the gaseous MSi molecules are derived as 627(8), 700(10), 799(10), 595(8), 599(8), 636(10), 553(12), and 497(8) kJ/mol for FeSi, RuSi, OsSi, CoSi, RhSi, IrSi, NiSi, and PtSi, respectively. Likewise, combining these results with other data provides the ionization energies of CoSi and NiSi as 7.49(7) and 7.62(7) eV, respectively. Chemical bonding trends among the diatomic transition metal silicides are discussed.

Bond dissociation energies of TiSi, ZrSi, HfSi, VSi, NbSi, and TaSi

Predissociation thresholds have been observed in the resonant two-photon ionization spectra of TiSi, ZrSi, HfSi, VSi, NbSi, and TaSi. It is argued that because of the high density of electronic states at the ground separated atom limit in these molecules, the predissociation threshold in each case corresponds to the thermochemical bond dissociation energy. The resulting bond dissociation energies are D₀(TiSi) = 2.201(3) eV, D₀(ZrSi) = 2.950(3) eV, D₀(HfSi) = 2.871(3) eV, D₀(VSi) = 2.234(3) eV, D₀(NbSi) = 3.080(3) eV, and D₀(TaSi) = 2.999(3) eV. The enthalpies of formation were also calculated as Δ_f,0KH°(TiSi(g)) = 705(19) kJ mol^-1, Δ_f,0KH°(ZrSi(g)) = 770(12) kJ mol^-1, Δ_f,0KH°(HfSi(g)) = 787(10) kJ mol^-1, Δ_f,0KH°(VSi(g)) = 743(11) kJ mol^-1, Δ_f,0KH°(NbSi(g)) = 879(11) kJ mol^-1, and Δ_f,0KH°(TaSi(g)) = 938(8) kJ mol^-1. Using thermochemical cycles, ionization energies of IE(TiSi) = 6.49(17) eV and IE(VSi) = 6.61(15) eV and bond dissociation energies of the ZrSi^- and NbSi^- anions, D₀(Zr-Si^-) ≤ 3.149(15) eV, D₀(Zr^--Si) ≤ 4.108(20) eV, D₀(Nb-Si^-) ≤ 3.525(31) eV, and D₀(Nb^--Si) ≤ 4.017(39) eV, have also been obtained. Calculations on the possible low-lying electronic states of each species are also reported.

The structural and electronic properties of NbSin-/0 (n = 3-12) clusters: anion photoelectron spectroscopy and ab initio calculations

Niobium-doped silicon clusters, NbSi_n^- (n = 3-12), were generated by laser vaporization and investigated by anion photoelectron spectroscopy. The structures and electronic properties of NbSi_n^- anions and their neutral counterparts were investigated with ab initio calculations and compared with the experimental results. It is found that the Nb atom in NbSi_n^-/0 prefers to occupy the high coordination sites to form more Nb-Si bonds. The most stable structures of NbSi_3-7^-/0 are all exohedral structures with the Nb atom face-capping the Si_n frameworks. At n = 8, both the anion and neutral adopt a boat-shaped structure and the openings of the boat-shaped structures remain unclosed in NbSi_9-10^-/0 clusters. The most stable structure of the NbSi₁₁^- anion is endohedral, while that of neutral NbSi₁₁ is exohedral. The global minima of both the NbSi₁₂^- anion and neutral NbSi₁₂ are D_6h symmetric hexagonal prisms with the Nb atom at the center. The perfect D_6h symmetric hexagonal prism of NbSi₁₂^- is electronically stable as it obeys the 18-electron rule and has a shell-closed electronic structure with a large HOMO-LUMO gap of 2.70 eV. The molecular orbital analysis of NbSi₁₂^- suggests that the delocalized Nb-Si₁₂ ligand interactions may contribute to the stability of the D_6h symmetric hexagonal prism. The AdNDP analysis shows that the delocalized 2c-2e Si-Si bonds and multicenter-2e NbSi_n bonds are important for the structural stability of the NbSi₁₂^- anion.

Electronic, magnetic and optical properties of Cu, Ag, Au-doped Si clusters

The structural, optical and magnetic properties of Cu, Ag, Au-doped Si7 Clusters have been systematically investigated using density functional theory calculations. The global optimized structures of Cu, Ag, Au-doped Si clusters are predicted to have a lower HOMO-LUMO gap and higher magnetic moment. M-doping (M = Cu, Ag, Au) in Si cluster widens a range of adsorption wavelength, especially Au-doping. The characteristics in electronic density of states (DOSs) show that C5v-Si6Cu has a big asymmetrical spin-up and spin-down. The average atomic moment is 0.428 mμB per atom for the Si6Cu cluster with C5v symmetry, while the average paramagnetic moment is 0.143 mμB per atom for other M-doped (M = Cu, Ag, Au) Si7 clusters.