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Liu Q, Lu JF, Jin LX. Effect of nitro substitution of azo-chalcone derivatives nano film on electrical memory properties. INORG NANO-MET CHEM 2020. [DOI: 10.1080/24701556.2020.1844236] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- Quan Liu
- Shaanxi Province Key Laboratory of Catalysis, College of Chemical and Environment Science, Shaanxi University of Technology, Hanzhong, P.R. China
| | - Jiu-Fu Lu
- Shaanxi Province Key Laboratory of Catalysis, College of Chemical and Environment Science, Shaanxi University of Technology, Hanzhong, P.R. China
| | - Ling-Xia Jin
- Shaanxi Province Key Laboratory of Catalysis, College of Chemical and Environment Science, Shaanxi University of Technology, Hanzhong, P.R. China
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Jadhav RG, Kumar A, Kumar S, Maiti S, Mukherjee S, Das AK. Benzoselenadiazole-Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices. Chempluschem 2020; 85:910-920. [PMID: 32401425 DOI: 10.1002/cplu.202000229] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2020] [Revised: 04/24/2020] [Indexed: 01/14/2023]
Abstract
In this work, two symmetrical donor-acceptor-donor (D-A-D) type benzoselenadiazole (BSeD)-based π-conjugated molecules were synthesized and employed as an active switching layer for non-volatile data storage applications. BSeD-based derivatives with different donor units attached through common vinylene linkers showed different electrical and optical properties. 4,7-Di((E)-styryl)benzo[c][2,1,3]selenadiazole (DSBSeD) and 4,7-bis((E)-4-methoxystyryl)benzo[c][2,1,3]selenadiazole (DMBSeD) are sandwiched between gallium-doped ZnO (GZO) and metal aluminum electrodes respectively through solution-processed spin-coating method. The solution-processed nanofibrous switching layer containing the DMBSeD-based memory device showed reliable memory characteristics in terms of write and erase operations with low SET voltage than the random-aggregated DSBSeD-based device. The nanofibrous molecular morphology of switching layer overcomes the interfacial hole transport energy barrier at the interface of the DMBSeD thin-film and the bottom GZO electrode. The memory device GZO/DMBSeD/Al based on nanofibrous switching layers shows switching characteristics at compliance current of 10 mA with Vset =0.79 V and Vreset =-0.55 V. This work will be beneficial for the rational design of advanced next-generation organic memory devices by controlling the nanostructured morphology of active organic switching layer for enhanced charge-transfer phenomenon.
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Affiliation(s)
- Rohit G Jadhav
- Department of Chemistry, Indian Institute of Technology Indore, Indore, 453552, India
| | - Amitesh Kumar
- Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology Indore, Madhya Pradesh, 453552, India
| | - Sanjay Kumar
- Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology Indore, Madhya Pradesh, 453552, India
| | - Sayan Maiti
- Department of Chemistry, Indian Institute of Technology Indore, Indore, 453552, India
| | - Shaibal Mukherjee
- Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology Indore, Madhya Pradesh, 453552, India
| | - Apurba K Das
- Department of Chemistry, Indian Institute of Technology Indore, Indore, 453552, India
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Sun Y, Lu J, Ai C, Wen D, Bai X. Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C 61-butyric acid methyl ester and polystyrene. Phys Chem Chem Phys 2018; 18:30808-30814. [PMID: 27801477 DOI: 10.1039/c6cp06084f] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Memory devices based on composites of polystyrene (PS) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) were investigated with bistable resistive switching behavior. Current-voltage (I-V) curves for indium-tin-oxide (ITO)/PS + PCBM/Al devices with 33 wt% PCBM showed non-volatile, rewritable, flash memory properties with a maximum ON/OFF current ratio of 1 × 104, which was 100 times larger than the ON/OFF ratio of the device with 5 wt% PCBM. For ITO/PS + PCBM/Al devices with 33 wt% PCBM, the write-read-erase-read test cycles demonstrated the bistable devices with ON and OFF states at the same voltage. The programmable ON and OFF states endured up to 104 read pulses and possessed a retention time of over 105 s, indicative of the memory stability of the device. In the OFF state, the I-V curve at lower voltages up to 0.45 V was attributed to the thermionic emission mechanism, and the I-V characteristics in the applied voltage above 0.5 V dominantly followed the space-charge-limited-current behaviors. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism.
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Affiliation(s)
- Yanmei Sun
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. and Communication and Electronics Engineering Institute, Qiqihar University, Qiqihar 161006, China
| | - Junguo Lu
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. and Communication and Electronics Engineering Institute, Qiqihar University, Qiqihar 161006, China
| | - Chunpeng Ai
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China.
| | - Dianzhong Wen
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China.
| | - Xuduo Bai
- School of Chemistry and Materials Science, Heilongjiang University, Harbin, 150080, China.
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Liu Q, Zhao C, Tian G, Ge H. Changing molecular conjugation with a phenazine acceptor for improvement of small molecule-based organic electronic memory performance. RSC Adv 2018; 8:805-811. [PMID: 35538974 PMCID: PMC9076932 DOI: 10.1039/c7ra11932a] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2017] [Accepted: 12/13/2017] [Indexed: 11/21/2022] Open
Abstract
Two small molecules with electron-accepting azobenzene or phenazine blocks, were synthesized. The experimental findings suggest that the molecule with larger conjugation may promote the memory performance by an enhanced strong charge transfer effect.
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Affiliation(s)
- Quan Liu
- Shaanxi Province Key Laboratory of Catalytic Foundation and Applications
- School of Chemical and Environmental Science
- Shaanxi University of Technology
- Hanzhong
- China
| | - Caibin Zhao
- Shaanxi Province Key Laboratory of Catalytic Foundation and Applications
- School of Chemical and Environmental Science
- Shaanxi University of Technology
- Hanzhong
- China
| | - Guanghui Tian
- Shaanxi Province Key Laboratory of Catalytic Foundation and Applications
- School of Chemical and Environmental Science
- Shaanxi University of Technology
- Hanzhong
- China
| | - Hongguang Ge
- Shaanxi Province Key Laboratory of Catalytic Foundation and Applications
- School of Chemical and Environmental Science
- Shaanxi University of Technology
- Hanzhong
- China
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Liu Q, Dong H, Li Y, Li H, Chen D, Wang L, Xu Q, Lu J. Improving Memory Performances by Adjusting the Symmetry and Polarity of O-Fluoroazobenzene-Based Molecules. Chem Asian J 2016; 11:512-9. [PMID: 26530289 DOI: 10.1002/asia.201501030] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2015] [Indexed: 11/11/2022]
Abstract
Three O-fluoroazobenzene-based molecules were chosen as memory-active molecules: FAZO-1 with a D-A2-D symmetric structure, FAZO-2 with an A1-A2-A1 symmetric structure, and FAZO-3 with a D-A2-A1 asymmetric structure. Both FAZO-1 and FAZO-2 had a lower molecular polarity, whereas FAZO-3 had a higher polarity. The fabricated indium-tin oxide (ITO)/FAZO-1/Al (Au) and ITO/FAZO-2/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO/FAZO-3/Al (Au) device showed nonvolatile ternary write-once-read-many-times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric-field-induced charge-transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.
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Affiliation(s)
- Quan Liu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Huilong Dong
- Functional Nano & Soft Materials Laboratory (FUNSOM) and, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Youyong Li
- Functional Nano & Soft Materials Laboratory (FUNSOM) and, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Dongyun Chen
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Lihua Wang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Qingfeng Xu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
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Sun Y, Lu J, Ai C, Wen D. Nonvolatile memory devices based on poly(vinyl alcohol) + graphene oxide hybrid composites. Phys Chem Chem Phys 2016; 18:11341-7. [DOI: 10.1039/c6cp00007j] [Citation(s) in RCA: 35] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The performance of the ITO/PVA + GO/Al device was effectively enhanced by the introduction of GO into the PVA matrix.
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Affiliation(s)
- Yanmei Sun
- Communication and Electronics Engineering Institute
- Qiqihar University
- Qiqihar
- China
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering
| | - Junguo Lu
- Communication and Electronics Engineering Institute
- Qiqihar University
- Qiqihar
- China
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering
| | - Chunpeng Ai
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering
- Heilongjiang University
- Harbin
- China
| | - Dianzhong Wen
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering
- Heilongjiang University
- Harbin
- China
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Zhou Q, Bo R, He J, Zhuang H, Li H, Li N, Chen D, Xu Q, Lu J. Altering the Position of Phenyl Substitution to Adjust Film Morphology and Memory Device Performance. Chem Asian J 2015; 10:1474-9. [DOI: 10.1002/asia.201500062] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2015] [Revised: 03/18/2015] [Indexed: 11/09/2022]
Affiliation(s)
- Qianhao Zhou
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P.R. China
| | - Rongcheng Bo
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P.R. China
| | - Jinghui He
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P.R. China
| | - Hao Zhuang
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P.R. China
| | - Hua Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P.R. China
| | - Najun Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P.R. China
| | - Dongyun Chen
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P.R. China
| | - Qingfeng Xu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P.R. China
| | - Jianmei Lu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P.R. China
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Sun Y, Miao F, Li R, Wen D. Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites. Phys Chem Chem Phys 2015; 17:29978-84. [DOI: 10.1039/c5cp05481h] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated.
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Affiliation(s)
- Yanmei Sun
- Communication and Electronics Engineering Institute
- Qiqihar University
- Qiqihar 161006
- China
| | - Fengjuan Miao
- Communication and Electronics Engineering Institute
- Qiqihar University
- Qiqihar 161006
- China
| | - Rui Li
- Department of Physics
- College of Science
- Qiqihar University
- Qiqihar 161006
- China
| | - Dianzhong Wen
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering
- Heilongjiang University
- Harbin
- China
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Bo R, Liu H, Zhou Q, Chen D, Xu Q, Li N, Li H, Lu J. Decreasing the Energy Consumption of Memory Devices by Enhancing the Conjugation Extent of the Terminal Electron-Donating Moieties within Molecules. Chem Asian J 2014; 10:461-7. [DOI: 10.1002/asia.201403119] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2014] [Indexed: 11/08/2022]
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Dong L, Li G, Yu AD, Bo Z, Liu CL, Chen WC. Conjugated Donor-Acceptor-Acceptor (D-A-A) Molecule for Organic Nonvolatile Resistor Memory. Chem Asian J 2014; 9:3403-7. [DOI: 10.1002/asia.201402981] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2014] [Revised: 09/03/2014] [Indexed: 11/10/2022]
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