Recent Advances in Electrochemical-Based Silicon Production Technologies with Reduced Carbon Emission

Sustainable and low-carbon-emission silicon production is currently one of the main focuses for the metallurgical and materials science communities. Electrochemistry, considered a promising strategy, has been explored to produce silicon due to prominent advantages: (a) high electricity utilization efficiency; (b) low-cost silica as a raw material; and (c) tunable morphologies and structures, including films, nanowires, and nanotubes. This review begins with a summary of early research on the extraction of silicon by electrochemistry. Emphasis has been placed on the electro-deoxidation and dissolution-electrodeposition of silica in chloride molten salts since the 21st century, including the basic reaction mechanisms, the fabrication of photoactive Si films for solar cells, the design and production of nano-Si and various silicon components for energy conversion, as well as storage applications. Besides, the feasibility of silicon electrodeposition in room-temperature ionic liquids and its unique opportunities are evaluated. On this basis, the challenges and future research directions for silicon electrochemical production strategies are proposed and discussed, which are essential to achieve large-scale sustainable production of silicon by electrochemistry.

Growth of Homogeneous Luminescent Silicon-Terbium Nanowires by One-Step Electrodeposition in Ionic Liquids

An electrodeposition method for the growth of homogeneous silicon-terbium nanowires (NWs) with green light emission is described. The method involves template-assisted electrochemical co-deposition of Si/Tb NWs with 90-nm diameter from an electrolyte bath containing Si and Tb precursors in an ionic liquid (IL). This method of deposition is advantageous over other conventional techniques as it is relatively simple and cost-effective and avoids harsh deposition conditions. The deposited NWs are of uniform dimensions with homogeneous composition incorporating 10% of Tb and exhibit intense room temperature (RT) luminescence in the visible range due to Tb emission. These results were confirmed by combining classical characterization such as scanning electron microscopy (SEM) and photoluminescence (PL) performed on an assembly of NWs with spatially resolved experiments such as transmission electron microscopy (TEM) and cathodoluminescence (CL). This electrodeposition method provides an alternative and extremely simple approach for depositing silicon-rare earth nanostructures for optical and sensing applications.

Single step electrodeposition process using ionic liquid to grow highly luminescent silicon/rare earth (Er, Tb) thin films with tunable composition

A one-step method for the electrodeposition of silicon-erbium (Si/Er) and silicon-terbium (Si/Tb) thin films using room temperature ionic liquid (RTIL) has been successfully developed. By playing with the electrochemical parameters, the concentration of incorporated rare earth (RE) ions (Er3+ and Tb3+) in the thin films can be tuned. The obtained thin films have been characterized by electron microscopy and composition analysis techniques. The structural quality of the obtained thin films is characterized by a uniform distribution of Si atoms and RE ions throughout the thickness. The study of the optical properties, carried out by photoluminescence (PL) spectroscopy, demonstrates the efficient optical activity of the films with typical Er and Tb luminescence at room temperature depending on the RE content. The deposition method described is a promising strategy for incorporating RE ions in semiconducting thin films to achieve materials for opto-electronic applications.

Electrodeposition of Si from an Ionic Liquid Bath at Room Temperature in the Presence of Water

The electrochemical deposition of Si has been carried out in an ionic liquid medium in the presence of water in a limited dry nitrogen environment on highly oriented pyrolytic graphite (HOPG) at room temperature. It has been found that the presence of water in ionic liquids does not affect the available effective potential window to a large extent. Silicon has been successfully deposited electrochemically in the overpotential regime in two different ionic liquids, namely, BMImTf₂N and BMImPF₆, in the presence of water. Although a Si thin film has been obtained from BMImTf₂N; only distinguished Si crystals protected in ionic liquid droplets have been observed from BMImPF₆. The most important observation of the present investigation is that the Si precursor, SiCl₄, instead of undergoing hydrolysis, even in the presence of water, coexisted with ionic liquids, and elemental Si has been successfully electrodeposited.