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Jeong J, Seo SG, Yu SM, Kang Y, Song J, Jin SH. Flexible Light-to-Frequency Conversion Circuits Built with Si-Based Frequency-to-Digital Converters via Complementary Photosensitive Ring Oscillators with p-Type SWNT and n-Type a-IGZO Thin Film Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2008131. [PMID: 33969631 DOI: 10.1002/smll.202008131] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2020] [Revised: 03/25/2021] [Indexed: 06/12/2023]
Abstract
In this study, as system-level photodetectors, light-to-frequency conversion circuits (LFCs) are realized by i) photosensitive ring oscillators (ROs) composed of amorphous indium-gallium-zinc-oxide/single-walled carbon nanotube (a-IGZO/SWNT) thin film transistors (TFTs) and ii) phase-locked-loop Si circuits built with frequency-to-digital converters (PFDC). The 3-stage ROs and logic gates based on a-IGZO/SWNT TFTs successfully demonstrate its performance on flexible substrates. Herein, along with the advantage of scalability, a-IGZO films are used as photosensitive n-type TFTs and SWNTs are employed as photo-insensitive p-type TFTs for better photosensitivity in circuit level. Through the controlling a post-annealing condition of a-IGZO film, responsivities and detectivities of a-IGZO TFTs are obtained as 36 AW-1 and 0.3 × 1012 Jones for red, 93 AW-1 and 3.1 × 1012 Jones for green, and 194 AW-1 and 11.7 × 1012 Jones for blue. Furthermore, as an advanced demonstration for practical application of LFCs, a unique circuit (i.e., PFDC) is designed to analyze the generated oscillation frequency (fosc ) from the LFC device and convert it to a digital code. As a result, the designed PFDC can exactly count the generated fosc from the flexible a-IGZO/SWNT ROs under light illumination with an outstanding sensitivity and assign input frequencies to respective digital code.
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Affiliation(s)
- Jinheon Jeong
- Department of Electronic Engineering, Incheon National University, Academy-ro 119, Yeongsu-gu, Incheon, 22012, Republic of Korea
| | - Seung Gi Seo
- Department of Electronic Engineering, Incheon National University, Academy-ro 119, Yeongsu-gu, Incheon, 22012, Republic of Korea
| | - Seung-Myeong Yu
- Department of Electronic Engineering, Incheon National University, Academy-ro 119, Yeongsu-gu, Incheon, 22012, Republic of Korea
| | - Yunha Kang
- Department of Electronic Engineering, Incheon National University, Academy-ro 119, Yeongsu-gu, Incheon, 22012, Republic of Korea
| | - Junyoung Song
- Department of Electronic Engineering, Incheon National University, Academy-ro 119, Yeongsu-gu, Incheon, 22012, Republic of Korea
| | - Sung Hun Jin
- Department of Electronic Engineering, Incheon National University, Academy-ro 119, Yeongsu-gu, Incheon, 22012, Republic of Korea
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Liu C, Liu Z, Ye X, Cheng P, Li Y. First-principles study of structural, elastic and electronic properties of naphyne and naphdiyne. RSC Adv 2020; 10:35349-35355. [PMID: 35515647 PMCID: PMC9056910 DOI: 10.1039/d0ra07214a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2020] [Accepted: 09/17/2020] [Indexed: 01/09/2023] Open
Abstract
The structural, elastic and electronic properties of 2D naphyne and naphdiyne sheets, which consist of naphthyl rings and acetylenic linkages, are investigated using first-principles calculations. Both naphyne and naphdiyne belong to the orthorhombic lattice family and exhibit the Cmmm plane group. The structural stability of naphyne and naphdiyne are comparable to those of experimentally synthesized graphdiyne and graphtetrayne, respectively. The increase of acetylenic linkages provides naphdiyne with a larger pore size, a lower planar packing density and a lower in-plane stiffness than naphyne. Naphyne is found to be an indirect semiconductor with a band gap of 0.273 eV, while naphdiyne has no band gap and has a Dirac point. The band gaps of naphyne and naphdiyne are found to be modified by applied strain in the elastic range. These facts make naphyne and naphdiyne potential candidates for a wide variety of membrane separations and for fabrication of soft and strain-tunable nanoelectronic devices. Naphyne and naphdiyne exhibit comparable stability to synthesized graphdiyne and graphtetrayne, and they show potential applications on membrane separations and fabrication of strain-tunable nanoelectronic devices.![]()
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Affiliation(s)
- Chuan Liu
- College of Chemistry and Materials Engineering
- Anhui Science and Technology University
- Bengbu
- China
| | - Zixiang Liu
- College of Chemistry and Materials Engineering
- Anhui Science and Technology University
- Bengbu
- China
| | - Xiangju Ye
- College of Chemistry and Materials Engineering
- Anhui Science and Technology University
- Bengbu
- China
| | - Ping Cheng
- College of Science
- University of Shanghai for Science and Technology
- Shanghai
- China
| | - Yingjie Li
- Anhui Key Lab of Coal Clean Conversion and Utilization
- Anhui University of Technology
- Maanshan
- China
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Akbari E, Arora VK, Enzevaee A, Ahmadi MT, Saeidmanesh M, Khaledian M, Karimi H, Yusof R. An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH3 gas sensor applications. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2014; 5:726-34. [PMID: 24991510 PMCID: PMC4077376 DOI: 10.3762/bjnano.5.85] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2013] [Accepted: 04/29/2014] [Indexed: 05/29/2023]
Abstract
Carbon, in its variety of allotropes, especially graphene and carbon nanotubes (CNTs), holds great potential for applications in variety of sensors because of dangling π-bonds that can react with chemical elements. In spite of their excellent features, carbon nanotubes (CNTs) and graphene have not been fully exploited in the development of the nanoelectronic industry mainly because of poor understanding of the band structure of these allotropes. A mathematical model is proposed with a clear purpose to acquire an analytical understanding of the field-effect-transistor (FET) based gas detection mechanism. The conductance change in the CNT/graphene channel resulting from the chemical reaction between the gas and channel surface molecules is emphasized. NH3 has been used as the prototype gas to be detected by the nanosensor and the corresponding current-voltage (I-V) characteristics of the FET-based sensor are studied. A graphene-based gas sensor model is also developed. The results from graphene and CNT models are compared with the experimental data. A satisfactory agreement, within the uncertainties of the experiments, is obtained. Graphene-based gas sensor exhibits higher conductivity compared to that of CNT-based counterpart for similar ambient conditions.
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Affiliation(s)
- Elnaz Akbari
- Centre for Artificial Intelligence and Robotics (CAIRO), Universiti Teknologi Malaysia, Kuala Lumpur, Malaysia
| | - Vijay Kumar Arora
- Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Johor Bahru, Malaysia
- Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, PA 18766, USA
| | - Aria Enzevaee
- Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, Johor Bahru, Malaysia
| | - Mohamad T Ahmadi
- Computational Nanoelectronic Research Group Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Johor Bahru, Malaysia
| | - Mehdi Saeidmanesh
- Computational Nanoelectronic Research Group Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Johor Bahru, Malaysia
| | - Mohsen Khaledian
- Computational Nanoelectronic Research Group Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Johor Bahru, Malaysia
| | - Hediyeh Karimi
- Centre for Artificial Intelligence and Robotics (CAIRO), Universiti Teknologi Malaysia, Kuala Lumpur, Malaysia
- Malaysia–Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, Kuala Lumpur, Malaysia
| | - Rubiyah Yusof
- Centre for Artificial Intelligence and Robotics (CAIRO), Universiti Teknologi Malaysia, Kuala Lumpur, Malaysia
- Malaysia–Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, Kuala Lumpur, Malaysia
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