Constructing metallic nanoroads on a MoS₂ monolayer via hydrogenation

Nonvolatile n-Type Doping and Metallic State in Multilayer-MoS2 Induced by Hydrogenation Using Ionic-Liquid Gating

Manipulation of the carrier density of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Herein, we applied the ionic-liquid-gating (ILG) method to inject the smallest ions, H⁺, into layered MoS₂ to manipulate its carrier concentration. The measurements demonstrate that the injection of H⁺ realizes a nonvolatile n-type doping and metallic state in multilayer-MoS₂ with a concentration of injection electron of ∼1.08 × 10¹³ cm^-2 but has no effect on monolayer-MoS₂, which clearly reveals that the H⁺ is injected into the interlayer of MoS₂, not in the crystal lattice. The H⁺-injected multilayer-MoS₂ was then used as the contact electrodes of a monolayer-MoS₂ field effect transistor to improve the contact quality, and its performance has been enhanced. Our work deepens the understanding of the ILG technology and extends its application in TMDs.

Excited states in hydrogenated single-layer MoS2

Our calculations of the excitation spectrum of single-layer MoS₂ at several hydrogen coverages, using a density-matrix based time-dependent density-functional theory (TDDFT) show that the fully hydrogenated system is metallic, while at lower coverages the spectrum consists of spin-polarized partially filled localized mid-gap states. The calculated absorption spectrum of the system reveals standard excitonic peaks corresponding to the bound valence-band hole and conduction-band electron, as well as excitonic peaks that involve the mid-gap states. Binding energies of the excitons of the hydrogenated system are found to be relatively large (few tens of meV), making their experimental detection facile and suggesting hydrogenation as a knob for tuning the optical properties of single-layer MoS₂. Importantly, we find hydrogenation to suppress visible light photoluminescence, in agreement with experimental observations. In contrast, both Li and Na atoms transform the system into an n-doped non-magnetic semiconductor that does not allow excitonic states.

Mechanisms of hydrogen atom interactions with MoS2monolayer

The mechanisms of H atoms interactions with single-layer MoS2, a two-dimensional transition metal dichalcogenide, are studied by static and dynamic DFT (density functional theory) modeling. Adsorption energies for H atoms on MoS2, barriers for H atoms migration and recombination on hydrogenated MoS2surface and effects of H atoms adsorptions on MoS2electronic properties and sulfur vacancy production were obtained by the static DFT calculations. The dynamic DFT calculations give insight into the dynamics of reactive interactions of incident H atoms with hydrogenated MoS2at H atoms energies in the range of 0.05-1 eV and elucidate the competitive mechanism of hydrogen adsorption and recombination that limits hydrogen surface coverage at the level of 30%. Various pathways of S-vacancies production and H atoms losses on MoS2are calculated and the effects of MoS2temperature on these processes are estimated and discussed.

Theoretical characterization of the electronic properties of heterogeneous vertical stacks of 2D metal dichalcogenides containing one doped layer

The rise of van der Waals hetero-structures based on transition metal dichalcogenides (TMDs) opens the door to a new generation of optoelectronic devices. A key factor controlling the operation and performance of such devices is the relative alignment of the band edges of the components. The electronic properties of the layers can be further modulated by chemical doping, typically leading to the introduction of gap states. However, it is not clear whether the impact of doping in a given layer is preserved when building vertical stacks incorporating it. This has motivated the present study aiming at shedding light by means of first-principles calculations on the electronic properties of heterogeneous bilayers containing one doped layer. Doping has been achieved based on the experimental literature by inserting the dopants by substitution in the 2D layer, by covalently attaching adatoms or functional groups on the surface, or by physisorbing electroactive molecules. Interestingly, very different scenarios can be encountered depending on the two materials present and the nature of doping. The impact of doping is preserved when the trap levels associated with the dopants lie in the bandgap of the bilayer. On the other hand, the pristine neutral layer can get doped to an extent depending on how its electrons can fill the trap levels associated with the other component. Altogether, the present theoretical work demonstrates that the properties of the bilayers are not simply defined by additive rules of the components.

Strain-enhanced properties of van der Waals heterostructure based on blue phosphorus and g-GaN as a visible-light-driven photocatalyst for water splitting

Many strategies have been developed to overcome the critical obstacles of fast recombination of photogenerated charges and the limited ability of semiconductor photocatalysts to absorb visible light. Considering all the novel properties of monolayered g-GaN and blue phosphorus (BlueP) which were revealed in recent studies, first-principles calculations were used to systematically investigate the structural stability, electronic energy, band alignment, band bending, and charge difference in the heterostructure formed by these two layered materials. The g-GaN/BlueP heterostructure is constructed by van der Waals (vdW) forces, and it possess a staggered band structure which induces electron transformation because of the different Fermi levels of the two layered materials. By aligning the Fermi levels, an interfacial electric field is built and it causes band bending, which can promote effective separation of photoexcited holes and electrons; the band-bending phenomenon was also calculated according to density functional theory (DFT). Moreover, effects of in-plane strain on the tuned bandgap, energy, and band edge were investigated, and the results show that the optical-absorption performance in the visible-light range can be improved. The findings reported in this paper are expected to provide theoretical support for the use of the g-GaN/BlueP vdW heterostructure as a photocatalyst for water splitting.

Using van der Waals heterostructures based on two-dimensional blue phosphorus and XC (X = Ge, Si) for water-splitting photocatalysis: a first-principles study

BlueP/SiC and BlueP/GeC vdW heterostructures are high-efficiency photocatalysts for water-splitting at pH 0 and 7, respectively.

Novel structured transition metal dichalcogenide nanosheets

Ultrathin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have attracted considerable attention owing to their unique properties and great potential in a wide range of applications. Great efforts have been devoted to the preparation of novel-structured TMD nanosheets by engineering their intrinsic structures at the atomic scale. Until now, a lot of new-structured TMD nanosheets, such as vacancy-containing TMDs, heteroatom-doped TMDs, TMD alloys, 1T'/1T phase and in-plane TMD crystal-phase heterostructures, TMD heterostructures and Janus TMD nanosheets, have been prepared. These materials exhibit unique properties and hold great promise in various applications, including electronics/optoelectronics, thermoelectrics, catalysis, energy storage and conversion and biomedicine. This review focuses on the most recent important discoveries in the preparation, characterization and application of these new-structured ultrathin 2D layered TMDs.

Activating MoS2 for pH-Universal Hydrogen Evolution Catalysis

MoS₂ presents a promising catalyst for the hydrogen evolution reaction (HER) in water splitting, but its worse catalytic performance in neutral and alkaline media than in acidic environment may be problematic for practical application. This is because the other half reaction of water splitting, i.e., oxygen evolution reaction, often needs to be implemented in alkaline environment. Here we demonstrate a universal strategy that may be used to significantly improve the HER catalysis of MoS₂ in all kinds of environments from acidic to alkaline, proton intercalation. Protons may be enabled to intercalate between monolayer MoS₂ and underlying substrates or in the interlayer space of thicker MoS₂ by two processes: electrochemically polarizing MoS₂ at negative potentials (vs RHE) in acidic media or immersing MoS₂ into certain acid solutions like TFSI. The improvement in catalytic performance is due to the activity enhancement of the active sites in MoS₂ by the intercalated protons, which might be related with the effect of the intercalated protons on electrical conductance and the adsorption energy of hydrogen atoms. The enhancement in catalytic activity by the intercalated proton is very stable even in neutral and alkaline electrolytes.

Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode

We establish a powerful poly(4-styrenesulfonate) (PSS)-treated strategy for sulfur vacancy healing in monolayer MoS₂ to precisely and steadily tune its electronic state. The self-healing mechanism, in which the sulfur vacancies are healed spontaneously by the sulfur adatom clusters on the MoS₂ surface through a PSS-induced hydrogenation process, is proposed and demonstrated systematically. The electron concentration of the self-healed MoS₂ dramatically decreased by 643 times, leading to a work function enhancement of ∼150 meV. This strategy is employed to fabricate a high performance lateral monolayer MoS₂ homojunction which presents a perfect rectifying behaviour, excellent photoresponsivity of ∼308 mA W⁻¹ and outstanding air-stability after two months. Unlike previous chemical doping, the lattice defect-induced local fields are eliminated during the process of the sulfur vacancy self-healing to largely improve the homojunction performance. Our findings demonstrate a promising and facile strategy in 2D material electronic state modulation for the development of next-generation electronics and optoelectronics.

Two-dimensional MoS₂ homojunctions, considered potential building blocks for next generation flexible electronics, currently suffer from quick degradation. Here, Zhang and co-workers use a self-healing sulfur vacancy mechanism to produce a MoS₂ photodiode that possesses long term stability.

Modulation of Electronic Structure of Armchair MoS2 Nanoribbon

We perform first-principles calculations on electronic structures of armchair MoS2 nanoribbons (AMoS2NRs) passivated by non-metal atoms. In contrast to bare AMoS2NR (AMoS2NR-bare) or purely hydrogen (H) edge-terminated AMoS2NR (AMoS2NR-H), it is found that H and oxygen (O) hybrid edge-terminated AMoS2NR (AMoS2NR-H-O) is more stable. AMoS2NR-H-O exhibits a direct band gap of about 1.43 eV, which is larger than those of pristine AMoS2NR (about 0.61 eV) and AMoS2NR-H (about 0.60 eV), and even exceeds the band gap of bulk MoS2 (about 0.86 eV) and is close to that of monolayer MoS2 (about 1.67 eV). The remarkable band gap of AMoS2NR-H-O is attributed to the charge redistribution on the edge atoms of MoS2 nanoribbon, especially the charges on the edge Mo atoms. Detailed calculations of AMoS2NR-H-O reveal that over 70% of the total density of states (DOS) of the conduction band minimum and the valence band maximum are contributed by the Mo atoms. In particular, edge Mo atoms play a crucial role in modulating the electronic structure. In addition, we have studied a series of functionalized AMoS2NR-H-X with X = S, F, C, N, and P, respectively. It is found that AMoS2NR-H-X with X = S, 2F, C possess remarkable electronic band gaps, while AMoS2NR-H-X with X = F, N, P are metallic. Our studies suggest that non-metal atom hybrid passivation can efficiently tune the electronic band gap of MoS2 nanoribbon and open a new route to obtain MoS2 based practical nanoelectronic device and photo¬voltaic device.

Dielectric property of MoS(2) crystal in terahertz and visible regions

Two-dimensional materials such as MoS₂ have attracted much attention in recent years due to their fascinating optoelectronic properties. The dielectric response of MoS₂ crystal in both the terahertz (THz) and visible regions is studied in this work. Time-domain THz spectroscopy is employed for the THz property investigation. The real and imaginary parts of the complex dielectric constant of MoS₂ crystal are found to follow a Drude model, which is due to the intrinsic carrier absorption. In the visible region, ellipsometry is used to investigate the dielectric response. The general trend of the complex dielectric constant is found to be described with a Lorentz model, while two remarkable dielectric response peaks are observed to be located at 1.85 and 2.03 eV, which has been attributed to the splitting arising from the combined effect of interlayer coupling and spin-orbit coupling. This work can be the research foundation for future optoelectronic applications with MoS₂.