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Wojnar P, Płachta J, Reszka A, Lähnemann J, Kaleta A, Kret S, Baranowski P, Wójcik M, Kowalski BJ, Baczewski LT, Karczewski G, Wojtowicz T. Near-infrared emission from spatially indirect excitons in type II ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires. NANOTECHNOLOGY 2021; 32:495202. [PMID: 34438391 DOI: 10.1088/1361-6528/ac218c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Accepted: 08/26/2021] [Indexed: 06/13/2023]
Abstract
ZnTe/CdSe/(Zn, Mg)Te core/double-shell nanowires are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalysts. A photoluminescence study of these structures reveals the presence of an optical emission in the near infrared. We assign this emission to the spatially indirect exciton recombination at the ZnTe/CdSe type II interface. This conclusion is confirmed by the observation of a significant blue-shift of the emission energy with an increasing excitation fluence induced by the electron-hole separation at the interface. Cathodoluminescence measurements reveal that the optical emission in the near infrared originates from nanowires and not from two-dimensional residual deposits between them. Moreover, it is demonstrated that the emission energy in the near infrared depends on the average CdSe shell thickness and the average Mg concentration within the (Zn, Mg)Te shell. The main mechanism responsible for these changes is associated with the strain induced by the (Zn, Mg)Te shell in the entire core/shell nanowire heterostructure.
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Affiliation(s)
- Piotr Wojnar
- Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
| | - Jakub Płachta
- Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
| | - Anna Reszka
- Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
| | - Jonas Lähnemann
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
| | - Anna Kaleta
- Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
| | - Sławomir Kret
- Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
| | - Piotr Baranowski
- Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
| | - Maciej Wójcik
- Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
| | - Bogdan J Kowalski
- Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
| | - Lech T Baczewski
- Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
| | - Grzegorz Karczewski
- Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
| | - Tomasz Wojtowicz
- Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Al Lotników 32/46, PL-02-668 Warsaw, Poland
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Xu B, Cao B. Unveiling hidden epitaxial interfaces in novel SnO 2/Zn 2SnO 4 core–shell nanowires with a multi-domain shield via cross-sectional transmission electron microscopy. CrystEngComm 2019. [DOI: 10.1039/c8ce02092b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Hidden epitaxial interfaces were revealed via cross-sectional TEM study of novel quasi-hexagonal SnO2/Zn2SnO4 core–shell nanowires.
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Affiliation(s)
- Bojia Xu
- School of Materials Science and Engineering
- Southwest Jiaotong University
- Chengdu
- People's Republic of China
| | - Baobao Cao
- School of Materials Science and Engineering
- Southwest Jiaotong University
- Chengdu
- People's Republic of China
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3
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Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications. CRYSTALS 2017. [DOI: 10.3390/cryst7100307] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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Song MS, Choi SB, Kim Y. Wurtzite ZnTe Nanotrees and Nanowires on Fluorine-Doped Tin Oxide Glass Substrates. NANO LETTERS 2017; 17:4365-4372. [PMID: 28654296 DOI: 10.1021/acs.nanolett.7b01446] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
ZnTe nanotrees and nanowires were grown on fluorine-doped tin oxide glass by physical vapor transport. Sn from a fluorine-doped tin oxide layer catalyzed the growth at a growth temperature of 320 °C. Both the stem and branch nanowires grew along ⟨0001⟩ in the rarely observed wurtzite structure. SnTe nanostructures were formed in the liquid catalyst and simultaneously ZnTe nanowire grew under Te-limited conditions, which made the formation of the wurtzite structure energetically favorable. Through polarization-dependent and power-dependent microphotoluminescence measurements from individual wurtzite nanowires at room temperature, we could determine the so far unknown fundamental bandgap of wurtzite ZnTe, which was 2.297 eV and thus 37 meV higher than that of zinc-blend ZnTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands is estimated to be 69 meV.
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Affiliation(s)
- Man Suk Song
- Department of Physics, Dong-A University , Hadan-2-dong, Sahagu, Busan 49315, Korea
| | - Seon Bin Choi
- Department of Physics, Dong-A University , Hadan-2-dong, Sahagu, Busan 49315, Korea
| | - Yong Kim
- Department of Physics, Dong-A University , Hadan-2-dong, Sahagu, Busan 49315, Korea
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Wojnar P, Płachta J, Zaleszczyk W, Kret S, Sanchez AM, Rudniewski R, Raczkowska K, Szymura M, Karczewski G, Baczewski LT, Pietruczik A, Wojtowicz T, Kossut J. Coexistence of optically active radial and axial CdTe insertions in single ZnTe nanowire. NANOSCALE 2016; 8:5720-5727. [PMID: 26903109 DOI: 10.1039/c5nr08806b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis.
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Affiliation(s)
- P Wojnar
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
| | - J Płachta
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
| | - W Zaleszczyk
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
| | - S Kret
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
| | - Ana M Sanchez
- Department of Physics, University of Warwick, Coventry CV4 7AL, UK.
| | - R Rudniewski
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
| | - K Raczkowska
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
| | - M Szymura
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
| | - G Karczewski
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
| | - L T Baczewski
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
| | - A Pietruczik
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
| | - T Wojtowicz
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
| | - J Kossut
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
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Rai SC, Wang K, Ding Y, Marmon JK, Bhatt M, Zhang Y, Zhou W, Wang ZL. Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array. ACS NANO 2015; 9:6419-27. [PMID: 26039323 DOI: 10.1021/acsnano.5b02081] [Citation(s) in RCA: 73] [Impact Index Per Article: 8.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.
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Affiliation(s)
- Satish C Rai
- †Advanced Materials Research Institute, University of New Orleans, New Orleans, Louisiana 70148, United States
| | - Kai Wang
- †Advanced Materials Research Institute, University of New Orleans, New Orleans, Louisiana 70148, United States
| | - Yong Ding
- ‡School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States
| | - Jason K Marmon
- ¶Nanoscale Science, University of North Carolina, Charlotte, North Carolina 28223, United States
| | - Manish Bhatt
- †Advanced Materials Research Institute, University of New Orleans, New Orleans, Louisiana 70148, United States
| | - Yong Zhang
- ¥Department of Electrical and Computer Engineering/Optoelectronic Center, University of North Carolina, Charlotte, North Carolina 28223, United States
| | - Weilie Zhou
- †Advanced Materials Research Institute, University of New Orleans, New Orleans, Louisiana 70148, United States
| | - Zhong Lin Wang
- ‡School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States
- §Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083 Beijing, China
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Caselli D, Liu Z, Shelhammer D, Ning CZ. Composition-graded nanowire solar cells fabricated in a single process for spectrum-splitting photovoltaic systems. NANO LETTERS 2014; 14:5772-5779. [PMID: 25203692 DOI: 10.1021/nl502662h] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Nanomaterials such as semiconductor nanowires have unique features that could enable novel optoelectronic applications such as novel solar cells. This paper aims to demonstrate one such recently proposed concept: Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells for spectrum-splitting photovoltaic systems. Two cells with different band gaps were fabricated simultaneously in the same process on a single substrate using spatially composition-graded CdSSe alloy nanowires grown by the Dual-Gradient Method in a chemical vapor deposition system. CdSSe nanowire ensemble devices tested under 1 sun AM1.5G illumination achieved open-circuit voltages up to 307 and 173 mV and short-circuit current densities as high as 0.091 and 0.974 mA/cm(2) for the CdS- and CdSe-rich cells, respectively. The open-circuit voltages were roughly three times those of similar CdSSe film cells fabricated for comparison due to the superior optical quality of the nanowires. I-V measurements were also performed using optical filters to simulate spectrum-splitting. The open-circuit voltages and fill factors of the CdS-rich subcells were uniformly larger than the corresponding CdSe-rich cells for similar photon flux, as expected. This suggests that if all wires can be contacted, the wide-gap cell is expected to have greater output power than the narrow-gap cell, which is the key to achieving high efficiencies with spectrum-splitting. This paper thus provides the first proof-of-concept demonstration of simultaneous fabrication of MILAMB solar cells. This approach to solar cell fabrication using single-crystal nanowires for spectrum-splitting photovoltaics could provide a future low-cost high-efficiency alternative to the conventional high-cost high-efficiency tandem cells.
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Affiliation(s)
- Derek Caselli
- ASU Nanophotonics Lab, Arizona State University , Tempe, Arizona 85287, United States
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Cai J, Zhang YL, Li Y, Du LY, Lyu ZY, Wu Q, Wang XZ, Hu Z. Synthesis of three-dimensional AlN–Si3N4 branched heterostructures and their photoluminescence properties. CrystEngComm 2014. [DOI: 10.1039/c4ce01186d] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Three-dimensional AlN–Si3N4 branched heterostructures are synthesized via extended vapor–liquid–solid and vapor–solid growth of one-dimensional Si3N4 nanostructures and AlN nanocones successively.
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Affiliation(s)
- J. Cai
- Key Laboratory of Mesoscopic Chemistry of MOE
- School of Chemistry and Chemical Engineering
- Nanjing University
- Nanjing 210093, PR China
| | - Y. L. Zhang
- Key Laboratory of Mesoscopic Chemistry of MOE
- School of Chemistry and Chemical Engineering
- Nanjing University
- Nanjing 210093, PR China
| | - Y. Li
- Key Laboratory of Mesoscopic Chemistry of MOE
- School of Chemistry and Chemical Engineering
- Nanjing University
- Nanjing 210093, PR China
| | - L. Y. Du
- Key Laboratory of Mesoscopic Chemistry of MOE
- School of Chemistry and Chemical Engineering
- Nanjing University
- Nanjing 210093, PR China
| | - Z. Y. Lyu
- Key Laboratory of Mesoscopic Chemistry of MOE
- School of Chemistry and Chemical Engineering
- Nanjing University
- Nanjing 210093, PR China
| | - Q. Wu
- Key Laboratory of Mesoscopic Chemistry of MOE
- School of Chemistry and Chemical Engineering
- Nanjing University
- Nanjing 210093, PR China
| | - X. Z. Wang
- Key Laboratory of Mesoscopic Chemistry of MOE
- School of Chemistry and Chemical Engineering
- Nanjing University
- Nanjing 210093, PR China
| | - Z. Hu
- Key Laboratory of Mesoscopic Chemistry of MOE
- School of Chemistry and Chemical Engineering
- Nanjing University
- Nanjing 210093, PR China
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