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Cheng R, Yin L, Hu R, Liu H, Wen Y, Liu C, He J. Modulation of Negative Differential Resistance in Black Phosphorus Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008329. [PMID: 33998073 DOI: 10.1002/adma.202008329] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 03/17/2021] [Indexed: 06/12/2023]
Abstract
Negative differential resistance (NDR), which describes the current decrease as the applied bias increases, holds great potential for varieties of electronic applications including radio-frequency oscillators, multipliers, and multivalue logics. Here, the modulation of a unique NDR effect in ambipolar black phosphorus (BP) transistors is reported, which is activated by specific electrical field dependence of lateral carrier distribution and is distinct from conventional NDR devices that rely on quantum tunneling. The NDR device exhibits a high peak current density (34 µA µm-1 ) and a high operating temperature. More importantly, due to the strong coupling between the channel and the gate electrode, both the NDR peak current and peak/valley voltages can be effectively modulated by the electrostatic gate. Furthermore, it is demonstrated that light can serve as an additional terminal for NDR modulation. The findings could provide an important insight into the transport behavior of BP transistors and contribute to the design of ambipolar-semiconductor-based electrical circuits.
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Affiliation(s)
- Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Rui Hu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Huijun Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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Kim J, Na J, Joo MK, Suh D. Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4226-4232. [PMID: 30607940 DOI: 10.1021/acsami.8b17869] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The advanced Hall magnetic sensor using an ion-gated graphene field-effect transistor demonstrates a high current-normalized sensitivity larger than 3000 V/AT and low operation voltages smaller than 0.5 V. From commercially available graphene-on-SiO2 wafers, large-area arrays of ion-gated graphene Hall element (ig-GHE) samples are prepared through complementary metal-oxide-semiconductor-compatible fabrication processes except the final addition of ionic liquid electrolyte covering the exposed graphene channel and the separate gate-electrode area. The enhanced carrier tunability by ionic gating enables this ig-GHE device to be extremely sensitive to magnetic fields in low-voltage-operation regimes. Further electrical characterization indicates that the operation window is limited by the nonuniform carrier concentration over the channel under high bias conditions. The drain-current-normalized magnetic resolution of the device measured using the low-frequency noise technique is comparable to the previously reported values despite its significant low power consumption.
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Affiliation(s)
- Joonggyu Kim
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
| | - Junhong Na
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Min-Kyu Joo
- Department of Applied Physics , Sookmyung Women's University , Seoul 04310 , Republic of Korea
| | - Dongseok Suh
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
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Xu X, Li W, Liu L, Feng J, Jiang Y, Tian WQ. Implementation of Outstanding Electronic Transport in Polar Covalent Boron Nitride Atomic Chains: another Extraordinary Odd-Even Behaviour. Sci Rep 2016; 6:26389. [PMID: 27211110 PMCID: PMC4876473 DOI: 10.1038/srep26389] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/03/2016] [Accepted: 04/29/2016] [Indexed: 11/09/2022] Open
Abstract
A theoretical investigation of the unique electronic transport properties of the junctions composed of boron nitride atomic chains bridging symmetric graphene electrodes with point-contacts is executed through non-equilibrium Green's function technique in combination with density functional theory. Compared with carbon atomic chains, the boron nitride atomic chains have an alternative arrangement of polar covalent B-N bonds and different contacts coupling electrodes, showing some unusual properties in functional atomic electronic devices. Remarkably, they have an extraordinary odd-even behavior of conductivity with the length increase. The rectification character and negative differential resistance of nonlinear current-voltage characteristics can be achieved by manipulating the type of contacts between boron nitride atomic chains bridges and electrodes. The junctions with asymmetric contacts have an intrinsic rectification, caused by stronger coupling in the C-N contact than the C-B contact. On the other hand, for symmetric contact junctions, it is confirmed that the transport properties of the junctions primarily depend on the nature of contacts. The junctions with symmetric C-N contacts have higher conductivity than their C-B contacts counterparts. Furthermore, the negative differential resistances of the junctions with only C-N contacts is very conspicuous and can be achieved at lower bias.
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Affiliation(s)
- Xiaodong Xu
- Department of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Weiqi Li
- Department of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Linhua Liu
- Department of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Jikang Feng
- Institute of Theoretical Chemistry and College of Chemistry, Jilin University, Changchun, 130023, P. R. China
| | - Yongyuan Jiang
- Department of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Wei Quan Tian
- College of Chemistry and Chemical Engineering, Chongqing University, Huxi Campus, Chongqing, 401331, P. R. China
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Oh G, Kim JS, Jeon JH, Won E, Son JW, Lee DH, Kim CK, Jang J, Lee T, Park BH. Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio. ACS NANO 2015; 9:7515-7522. [PMID: 26083550 DOI: 10.1021/acsnano.5b02616] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.
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Affiliation(s)
| | | | | | | | | | | | | | - Jingon Jang
- ‡Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea
| | - Takhee Lee
- ‡Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea
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Li XF, Lian KY, Qiu Q, Luo Y. Half-filled energy bands induced negative differential resistance in nitrogen-doped graphene. NANOSCALE 2015; 7:4156-4162. [PMID: 25665635 DOI: 10.1039/c4nr07472f] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Nitrogen-doping brings novel properties and promising applications into graphene, but the underlying mechanism is still in debate. To determine the key factor in motivating the negative differential resistance (NDR) behaviour of nitrogen-doped graphene, the electronic structure and transport properties of an 11-dimer wide nitrogen-doped armchair graphene nanoribbon (N-AGNR) were systematically studied by first principles calculations. Both the effect of interaction between N-dopants and the effect of doping-sublattice on the NDR were examined for the first time. Taking into account the two effects, N-AGNR becomes metallic or semiconducting depending on the doping configuration, and its Fermi level varies in a large range. NDR was firmly verified not to be intrinsic for N-AGNRs. However, it is totally determined by whether nitrogen-doping induces half-filled energy bands (HFEBs) because it is HFEBs that cross the Fermi level and determine the transport properties of N-AGNR under low biases. With the bias increasing, the transmission spectrum near the Fermi level showed a flag shape, and therefore, the corresponding transport channel is totally suppressed at a certain bias, resulting in the NDR behaviour with a configuration-dependent peak-to-valley current ratio (PVCR) up to 10(4). Our findings give new insights into the microscopic mechanism of chemical doping induced NDR behaviour and will be useful in building NDR-based nanodevices in the future.
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Affiliation(s)
- Xiao-Fei Li
- School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China.
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Wang L, Chen X, Hu Y, Yu A, Lu W. Nonlinear current-voltage characteristics and enhanced negative differential conductance in graphene field effect transistors. NANOSCALE 2014; 6:12769-12779. [PMID: 25224726 DOI: 10.1039/c4nr02816c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.
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Affiliation(s)
- Lin Wang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
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Wang X, Xie W, Chen J, Xu JB. Homo- and hetero- p-n junctions formed on graphene steps. ACS APPLIED MATERIALS & INTERFACES 2014; 6:3-8. [PMID: 24182202 DOI: 10.1021/am402808p] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
p-n junction is a fundamental building block in modern electronic circuits. We report graphene p-n junctions formed by a one-step thickness-dependent surface treatment of mono-/bilayer graphene steps. The junction electronic properties are systemically studied by means of Kelvin probe force microscopy (KPFM) and transport measurements. Because of the dissimilar modifications to graphene electronic properties, the junctions behave distinctly, i.e., two-component resistance-like for organic charge transfer doping and Shottky-junction-like for covalent doping. By exploring the spatially potential distribution, we clarify the potential profiles as well as the transport attributes across the graphene p-n junction interface under lateral bias and electrical gating. Our results not only unveil the detailed properties of graphene p-n junction interface, but also gain an insight into its practical applications in nanoelectronics.
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Affiliation(s)
- Xiaomu Wang
- Department of Electronic Engineering and Materials Science and Research Technology Center, The Chinese University of Hong Kong , Shatin, N. T., Hong Kong SAR, China
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