Effect of Nitrogen Flow in Hydrogen/Nitrogen Plasma Annealing on Aluminum-Doped Zinc Oxide/Tin-Doped Indium Oxide Bilayer Films Applied in Low Emissivity Glass

Low emissivity glass (low-e glass), which is often used in energy-saving buildings, has high thermal resistance and visible light transmission. Heavily doped wide band gap semiconductors like aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) have these properties, especially after certain treatment. In our experiments, in-line sputtered AZO and ITO bilayer (AZO/ITO) films on glass substrates were prepared first. The deposition of AZO/ITO films was following by annealing in hydrogen/nitrogen (H2/N2) plasma with different N2 flows. The structure and optical and electrical properties of AZO/ITO films were surveyed. Experiment results indicated that N2 flow in H2/N2 plasma annealing of AZO/ITO films slightly modified the structure and electrical properties of AZO/ITO films. The X-ray diffraction peak corresponding to zinc oxide (002) crystal plane slightly shifted to a higher angle and its full width at half maximum decreased as the N2 flow increased. The electrical resistivity and the emissivity reduced for the plasma annealed AZO/ITO films when the N2 flow was raised. The optimum H2/N2 gas flow was 100/100 for plasma annealed AZO/ITO films in this work for low emissivity application. The emissivity and average visible transmittance for H2/N2 = 100/100 plasma annealed AZO/ITO were 0.07 and 80%, respectively, lying in the range of commercially used low emissivity glass.

Electrosprayed Polymer-Hybridized Multidoped ZnO Mesoscopic Nanocrystals Yield Highly Efficient and Stable Perovskite Solar Cells

Solid-state perovskite solar cells have been expeditiously developed since the past few years. However, there are a number of open questions and issues related to the perovskite devices, such as their long-term ambient stability and hysteresis in current density-voltage curves. We developed highly efficient and hysteresis-less perovskite devices by changing the frequently used TiO₂ mesoscopic layer with polymer-hybridized multidoped ZnO nanocrystals in a common n-i-p structure for the first time. The gradual adjustment of ZnO conduction band position using single- and multidopant atoms will likely enhance the power conversion efficiency (PCE) from 8.26 to 13.54%, with PCE_max = 15.09%. The highest PCE_avg of 13.54% was demonstrated by 2 atom % boron and 6 atom % fluorine co-doped (B, F:ZnO) nanolayers (using optimized film thickness of 160 nm) owing to their highest conductivity, carrier concentration, optical transmittance, and band-gap energy compared to other doped films. We also successfully apply a fine polyethylenimine thin layer on the doped ZnO nanolayers, causing the reduction in work function and overall demonstrating the enhancement in PCE from ∼10.86% up to 16.20%. A polymer-mixed electron-transporting layer demonstrates the remarkable PCE_max of 20.74% by decreasing the trap sites in the oxide layer that probably reduces the chances of carrier interfacial recombination originated from traps and thus improves the device performance. Particularly, we produce these electron-rich multidoped ZnO nanolayers via electrospray technique, which is highly suitable for the future development of perovskite solar cells.