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Guo C, Song J, Ni J, Liu Y, Fan T. Radio-Frequency Conductivity Characteristics and Corresponding Mechanism of Graphene/Copper Multilayer Structures. MATERIALS (BASEL, SWITZERLAND) 2024; 17:2999. [PMID: 38930367 PMCID: PMC11205435 DOI: 10.3390/ma17122999] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2024] [Revised: 06/06/2024] [Accepted: 06/10/2024] [Indexed: 06/28/2024]
Abstract
High-radio-frequency (RF) conductivity is required in advanced electronic materials to reduce the electromagnetic loss and power dissipation of electronic devices. Graphene/copper (Gr/Cu) multilayers possess higher conductivity than silver under direct current conditions. However, their RF conductivity and detailed mechanisms have rarely been evaluated at the micro scale. In this work, the RF conductivity of copper-copper (P-Cu), monolayer-graphene/copper (S-Gr/Cu), and multilayer-graphene/copper (M-Gr/Cu) multilayer structures were evaluated using scanning microwave impedance microscopy (SMIM) and dielectric resonator technique. The results indicated that the order of RF conductivity was M-Gr/Cu < P-Cu < S-Gr/Cu at 3 GHz, contrasting with P-Cu < M-Gr/Cu < S-Gr/Cu at DC condition. Meanwhile, the same trend of M-Gr/Cu < P-Cu < S-Gr/Cu was also observed using the dielectric resonator technique. Based on the conductivity-related Drude model and scattering theory, we believe that the microwave radiation can induce a thermal effect at S-Gr/Cu interfaces, leading to an increasing carrier concentration in S-Gr. In contrast, the intrinsic defects in M-Gr introduce additional carrier scattering, thereby reducing the RF conductivity in M-Gr/Cu. Our research offers a practical foundation for investigating conductive materials under RF conditions.
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Affiliation(s)
| | | | | | - Yue Liu
- State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; (C.G.); (J.S.); (J.N.)
| | - Tongxiang Fan
- State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; (C.G.); (J.S.); (J.N.)
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Pham PV, Mai TH, Do HB, Vasundhara M, Nguyen VH, Nguyen T, Bui HV, Dao VD, Gupta RK, Ponnusamy VK, Park JH. Layer-by-layer thinning of two-dimensional materials. Chem Soc Rev 2024; 53:5190-5226. [PMID: 38586901 DOI: 10.1039/d3cs00817g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
Etching technology - one of the representative modern semiconductor device makers - serves as a broad descriptor for the process of removing material from the surfaces of various materials, whether partially or entirely. Meanwhile, thinning technology represents a novel and highly specialized approach within the realm of etching technology. It indicates the importance of achieving an exceptionally sophisticated and precise removal of material, layer-by-layer, at the nanoscale. Notably, thinning technology has gained substantial momentum, particularly in top-down strategies aimed at pushing the frontiers of nano-worlds. This rapid development in thinning technology has generated substantial interest among researchers from diverse backgrounds, including those in the fields of chemistry, physics, and engineering. Precisely and expertly controlling the layer numbers of 2D materials through the thinning procedure has been considered as a crucial step. This is because the thinning processes lead to variations in the electrical and optical characteristics. In this comprehensive review, the strategies for top-down thinning of representative 2D materials (e.g., graphene, black phosphorus, MoS2, h-BN, WS2, MoSe2, and WSe2) based on conventional plasma-assisted thinning, integrated cyclic plasma-assisted thinning, laser-assisted thinning, metal-assisted splitting, and layer-resolved splitting are covered in detail, along with their mechanisms and benefits. Additionally, this review further explores the latest advancements in terms of the potential advantages of semiconductor devices achieved by top-down 2D material thinning procedures.
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Affiliation(s)
- Phuong V Pham
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - The-Hung Mai
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - Huy-Binh Do
- Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, Thu Duc 700000, Vietnam
| | - M Vasundhara
- Polymers and Functional Materials Department, CSIR-Indian Institute of Chemical Technology, Tarnaka, Hyderabad 500007, India
| | - Van-Huy Nguyen
- Centre for Herbal Pharmacology and Environmental Sustainability, Chettinad Hospital and Research Institute, Chettinad Academy of Research and Education, Kelambakkam-603103, Tamil Nadu, India
| | - Trieu Nguyen
- Shared Research Facilities, West Virginia University, Morgantown, WV 26506, USA
| | - Hao Van Bui
- Faculty of Materials Science and Engineering and Faculty of Electrical and Electronic Engineering, Phenikaa University, Hanoi 12116, Vietnam
| | - Van-Duong Dao
- Faculty of Biotechnology, Chemistry, and Environmental Engineering, Phenikaa University, Hanoi 100000, Vietnam
| | - Ram K Gupta
- Department of Chemistry, Kansas Polymer Research Center, Pittsburg State University, Pittsburg, KS-66762, USA
| | - Vinoth Kumar Ponnusamy
- Department of Medicinal and Applied Chemistry, Kaohsiung Medical University, Kaohsiung 807, Taiwan.
- Research Center for Precision Environmental Medicine, Kaohsiung Medical University, Kaohsiung 807, Taiwan
- Department of Medical Research, Kaohsiung Medical University Hospital, Kaohsiung 807, Taiwan
- Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea.
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Xue X, Liu M, Zhou X, Liu S, Wang L, Yu G. Controllable Synthesis and Growth Mechanism of Interlayer-Coupled Multilayer Graphene. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2634. [PMID: 37836275 PMCID: PMC10574119 DOI: 10.3390/nano13192634] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 09/14/2023] [Accepted: 09/20/2023] [Indexed: 10/15/2023]
Abstract
The potential applications of multilayer graphene in many fields, such as superconductivity and thermal conductivity, continue to emerge. However, there are still many problems in the growth mechanism of multilayer graphene. In this paper, a simple control strategy for the preparation of interlayer-coupled multilayer graphene on a liquid Cu substrate was developed. By adjusting the flow rate of a carrier gas in the CVD system, the effect for finely controlling the carbon source supply was achieved. Therefore, the carbon could diffuse from the edge of the single-layer graphene to underneath the layer of graphene and then interlayer-coupled multilayer graphene with different shapes were prepared. Through a variety of characterization methods, it was determined that the stacked mode of interlayer-coupled multilayer graphene conformed to AB-stacking structure. The small multilayer graphene domains stacked under single-layer graphene was first found, and the growth process and growth mechanism of interlayer-coupled multilayer graphene with winged and umbrella shapes were studied, respectively. This study reveals the growth mechanism of multilayer graphene grown by using a carbon source through edge diffusion, paving the way for the controllable preparation of multilayer graphene on a liquid Cu surface.
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Affiliation(s)
- Xudong Xue
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
| | - Mengya Liu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
| | - Xiahong Zhou
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Liu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liping Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
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Kong Q, Wang X, Xia L, Wu C, Feng Z, Wang M, Zhao J. Achieving Low Contact Resistance by Engineering a Metal-Graphene Interface Simply with Optical Lithography. ACS APPLIED MATERIALS & INTERFACES 2017; 9:21573-21578. [PMID: 28574244 DOI: 10.1021/acsami.7b04993] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
High-performance graphene-based transistors crucially depend on the creation of the high-quality graphene-metal contacts. Here we report an approach for achieving ultralow contact resistance simply with optical lithography by engineering a metal-graphene interface. Note that a significant improvement with optical lithography for the contact-treated graphene device leads to a contact resistance as low as 150 Ω·μm. The residue-free sacrificial film impedes the photoresist from further doping graphene, and all of the source and drain contact regions defined by optical lithography remain intact. This approach, being compatible with complementary metal-oxide-semiconductor (CMOS) fabrication processes regardless of the source of graphene, would hold promise for the large-scale production of graphene-based transistors with optical lithography.
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Affiliation(s)
- Qinghua Kong
- School of Science, Beijing Jiaotong University , Beijing 100044, China
| | - Xuanyun Wang
- Wuhan China Star Optoelectronics Technology Co., Ltd. , Wuhan 430075, China
| | - Lishuang Xia
- School of Science, Beijing Jiaotong University , Beijing 100044, China
| | - Chenbo Wu
- School of Science, Beijing Jiaotong University , Beijing 100044, China
| | - Zhixin Feng
- School of Science, Beijing Jiaotong University , Beijing 100044, China
| | - Min Wang
- School of Science, Beijing Jiaotong University , Beijing 100044, China
| | - Jing Zhao
- Center for Gene and Cell Engineering, Institute of Biomedicine and Biotechnology, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055, China
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Abstract
AbstractDue to the unique properties of graphene, single layer, bilayer or even few layer graphene peeled off from bulk graphite cannot meet the need of practical applications. Large size graphene with quality comparable to mechanically exfoliated graphene has been synthesized by chemical vapor deposition (CVD). The main development and the key issues in controllable chemical vapor deposition of graphene has been briefly discussed in this chapter. Various strategies for graphene layer number and stacking control, large size single crystal graphene domains on copper, graphene direct growth on dielectric substrates, and doping of graphene have been demonstrated. The methods summarized here will provide guidance on how to synthesize other two-dimensional materials beyond graphene.
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Cai ZF, Yue JY, Li J, Wang D, Xu W, Wan LJ. Self-assembly of a sulfur-bridged annulene: Substrate effect and donor-acceptor complex. J Electroanal Chem (Lausanne) 2016. [DOI: 10.1016/j.jelechem.2016.09.010] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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7
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Li J, Li M, Zhou LL, Lang SY, Lu HY, Wang D, Chen CF, Wan LJ. Click and Patterned Functionalization of Graphene by Diels–Alder Reaction. J Am Chem Soc 2016; 138:7448-51. [DOI: 10.1021/jacs.6b02209] [Citation(s) in RCA: 68] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Affiliation(s)
- Jing Li
- Key
Laboratory of Molecular Nanostructure and Nanotechnology and Beijing
National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (CAS), Beijing 100190, P. R. China
- University of CAS, Beijing 100049, P. R. China
| | - Meng Li
- Key
Laboratory of Molecular Nanostructure and Nanotechnology and Beijing
National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (CAS), Beijing 100190, P. R. China
| | - Li-Li Zhou
- University of CAS, Beijing 100049, P. R. China
| | - Shuang-Yan Lang
- Key
Laboratory of Molecular Nanostructure and Nanotechnology and Beijing
National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (CAS), Beijing 100190, P. R. China
- University of CAS, Beijing 100049, P. R. China
| | - Hai-Yan Lu
- University of CAS, Beijing 100049, P. R. China
| | - Dong Wang
- Key
Laboratory of Molecular Nanostructure and Nanotechnology and Beijing
National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (CAS), Beijing 100190, P. R. China
| | - Chuan-Feng Chen
- Key
Laboratory of Molecular Nanostructure and Nanotechnology and Beijing
National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (CAS), Beijing 100190, P. R. China
| | - Li-Jun Wan
- Key
Laboratory of Molecular Nanostructure and Nanotechnology and Beijing
National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (CAS), Beijing 100190, P. R. China
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8
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Wu ML, Wang D. Microdomain orientation control of PS-b-PMMA films enabled by wettability relay of graphene. RSC Adv 2016. [DOI: 10.1039/c5ra24953h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022] Open
Abstract
A substrate-independent method to control the orientation of PS-b-PMMA film is presented by utilizing monolayer graphene coated PS-r-PMMA copolymer layer.
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Affiliation(s)
- Mei-Ling Wu
- Key Laboratory of Molecular Nanostructure and Nanotechnology and Beijing National Laboratory for Molecular Sciences
- Institute of Chemistry
- Chinese Academy of Sciences (CAS)
- Beijing 100190
- P. R. China
| | - Dong Wang
- Key Laboratory of Molecular Nanostructure and Nanotechnology and Beijing National Laboratory for Molecular Sciences
- Institute of Chemistry
- Chinese Academy of Sciences (CAS)
- Beijing 100190
- P. R. China
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Li J, Wang D, Wan LJ. Unexpected functions of oxygen in a chemical vapor deposition atmosphere to regulate graphene growth modes. Chem Commun (Camb) 2015; 51:15486-9. [DOI: 10.1039/c5cc06073g] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The ppm grade of oxygen in a CVD atmosphere can obviously tune the graphene growth modes of multilayer and etching fragments.
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Affiliation(s)
- Jing Li
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology and Beijing National Laboratory for Molecular Sciences
- Institute of Chemistry
- Chinese Academy of Sciences (CAS)
- Beijing 100190
- P. R. China
| | - Dong Wang
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology and Beijing National Laboratory for Molecular Sciences
- Institute of Chemistry
- Chinese Academy of Sciences (CAS)
- Beijing 100190
- P. R. China
| | - Li-Jun Wan
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology and Beijing National Laboratory for Molecular Sciences
- Institute of Chemistry
- Chinese Academy of Sciences (CAS)
- Beijing 100190
- P. R. China
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Sun D, Yang J, Yan X. Synthesis and Electrochemical Biosensing Properties of Hierarchically Porous Nitrogen-Doped Graphene Microspheres. ChemElectroChem 2014. [DOI: 10.1002/celc.201402323] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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Wu ML, Li J, Wan LJ, Wang D. Monolayer graphene-supported free-standing PS-b-PMMA thin film with perpendicularly orientated microdomains. RSC Adv 2014. [DOI: 10.1039/c4ra12655f] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
A facile way to fabricate robust free-standing PS-b-PMMA thin films with perpendicularly orientated microdomains on monolayer graphene is reported.
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Affiliation(s)
- Mei-Ling Wu
- Key Laboratory of Molecular Nanostructure and Nanotechnology and Beijing National Laboratory for Molecular Sciences
- Institute of Chemistry
- Chinese Academy of Sciences (CAS)
- Beijing 100190, P. R. China
- University of CAS
| | - Jing Li
- Key Laboratory of Molecular Nanostructure and Nanotechnology and Beijing National Laboratory for Molecular Sciences
- Institute of Chemistry
- Chinese Academy of Sciences (CAS)
- Beijing 100190, P. R. China
- University of CAS
| | - Li-Jun Wan
- Key Laboratory of Molecular Nanostructure and Nanotechnology and Beijing National Laboratory for Molecular Sciences
- Institute of Chemistry
- Chinese Academy of Sciences (CAS)
- Beijing 100190, P. R. China
| | - Dong Wang
- Key Laboratory of Molecular Nanostructure and Nanotechnology and Beijing National Laboratory for Molecular Sciences
- Institute of Chemistry
- Chinese Academy of Sciences (CAS)
- Beijing 100190, P. R. China
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