Cai J, Zhang YL, Lyu ZY, Zhao J, Shen JC, Wu Q, Wang XZ, Wu XL, Chen Y, Hu Z. Partial pressure-induced growth of silicon nitride belts with tunable width and photoluminescence properties.
CrystEngComm 2015. [DOI:
10.1039/c4ce01903b]
[Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
Si3N4 belts with tunable width were synthesized by regulating the partial pressure of NH3/N2 in gaseous mixtures of Ar and NH3/N2 during the nitridation of silicon powders, which demonstrated tunable photoluminescence properties.
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