First-principles study of room-temperature ferromagnetism in transition-metal doped H-SiNWs

Hydrogen-saturated silicon nanowires (H-SiNWs) are the most attractive materials for nanoelectronics due to their special tunable electronic properties. The incorporation of magnetism in H-SiNWs can be extremely beneficial for a wide range of emerging spintronic devices, which can offer a more effective way to control spin. Here, we investigate the energetic stability, electronic properties, and magnetic properties of transition metal (TM), i.e., Fe and Mn doped Hydrogen-saturated silicon nanowires (TM:H-SiNWs) that have a diameter of 1 nm directed in (100), (110), and (111) facets using spin-polarized density functional theory (DFT). The calculations showed that the TM-doped H-SiNWs (TM:H-SiNWs) convince the electronic and magnetic alterations of H-SiNWs semiconductors. It can be ascertained that the total magnetization of the studied configurations is contributed by the hybridization between a localized p orbital of Si and a d orbital of the TM atoms. In addition, we report the Curie temperature of the TM:H-SiNWs using a mean-field approximation and a Monte Carlo simulation based on the Ising model. We obtain the above room temperature ferromagnetism in the (100) and (111) direction-oriented Mn:H-SiNWs. This study provides an in-depth knowledge of the properties of TM-doped H-SiNWs and can be used as a reference in silicon-based spintronic devices.

Synthesis, properties and catalysis of quantum dots in C–C and C-heteroatom bond formations

Luminescent quantum dots (QDs) represent a new form of carbon nanomaterials which have gained widespread attention in recent years, especially in the area of chemical sensing, bioimaging, nanomedicine, solar cells, light-emitting diode (LED), and electrocatalysis. Their extremely small size renders some unusual properties such as quantum confinement effects, good surface binding properties, high surface‐to‐volume ratios, broad and intense absorption spectra in the visible region, optical and electronic properties different from those of bulk materials. Apart from, during the past few years, QDs offer new and versatile ways to serve as photocatalysts in organic synthesis. Quantum dots (QD) have band gaps that could be nicely controlled by a number of factors in a complicated way, mentioned in the article. Processing, structure, properties and applications are also reviewed for semiconducting quantum dots. Overall, this review aims to summarize the recent innovative applications of QD or its modified nanohybrid as efficient, robust, photoassisted redox catalysts in C–C and C-heteroatom bond forming reactions. The recent structural modifications of QD or its core structure in the development of new synthetic methodologies are also highlighted. Following a primer on the structure, properties, and bio-functionalization of QDs, herein selected examples of QD as a recoverable sustainable nanocatalyst in various green media are embodied for future reference.

Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO2 multilayers

In this paper, we report on the enhanced control of resistive switching in multilayer Si/SiO₂ structures, which permit the formation of Si nanocrystals with a typical size of 5.88 nm and overall good shape homogeneity. The deposition of a different number of Si and SiO₂ bilayers (6, 8 and 10) allowed control of SET/RESET voltages in negative bias ranges 4.5-10 V and 6.3-13 V for six- and ten-bilayer devices, respectively. The corresponding resistance ratio between ON/OFF states varied in the ranges 10⁷-10⁵ for the aforementioned number of bilayers. Based on the result of XPS measurements, we suggest that the resistive switching in the studied system occurs due to the formation and annihilation of Si-Si and Si-O bonds, which serve as conductive pathways and isolating material, respectively.

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

The thickness-dependent band gap and defect features of ultrathin ZrO2 films studied by spectroscopic ellipsometry

The band gap and defect features of ultrathin ZrO2 films with varying thicknesses have been investigated by spectroscopic ellipsometry through the point-by-point data inversion method. The ε2-sprectra in the 3-6 eV range are extracted based on an optical model consisting of a Si substrate/effective ZrO2 film/air ambient structure where the effective ZrO2 film is a combination of interfacial layers and ZrO2. Evident widening of the band gap with a reducing size is observed when the effective ZrO2 films are below a critical thickness, somewhere between 8.80 nm and 17.13 nm. This is due to quantum-confinement and amorphous effects. Moreover, the sub-band-gap defects at interfacial layers and in bulk ZrO2 are identified and present strong thickness dependence as well. The interfacial defects at 3.26, 4.13, 4.43, and 4.77 eV mainly exist below the critical thickness and exhibit a significant suppression with increasing film thickness. The bulk defects at 4.15 eV and 4.46 eV dominate in ZrO2 films once they are over the critical thickness. The evolution of the band gap and defects is closely related to variance in the electronic structure of amorphous ZrO2. Our results may be helpful in understanding controversial problems concerning the size effect on ultrathin high-k oxide films and exploring the further miniaturization of electronic devices based on them.

Photoluminescence enhancement from silicon quantum dots located in the vicinity of a monolayer of gold nanoparticles

There is an optimum separation distance between light-emitting silicon quantum dots and a monolayer of nearly spherical gold nanoparticles to achieve a photoluminescence enhancement from the system.