Evolution of epitaxial semiconductor nanodots and nanowires from supersaturated wetting layers

Recent Progress in the Synthesis and Applications of Composite Photocatalysts: A Critical Review

Photocatalysis is an advanced technique that transforms solar energy into sustainable fuels and oxidizes pollutants via the aid of semiconductor photocatalysts. The main scientific and technological challenges for effective photocatalysis are the stability, robustness, and efficiency of semiconductor photocatalysts. For practical applications, researchers are trying to develop highly efficient and stable photocatalysts. Since the literature is highly scattered, it is urgent to write a critical review that summarizes the state-of-the-art progress in the design of a variety of semiconductor composite photocatalysts for energy and environmental applications. Herein, a comprehensive review is presented that summarizes an overview, history, mechanism, advantages, and challenges of semiconductor photocatalysis. Further, the recent advancements in the design of heterostructure photocatalysts including alloy quantum dots based composites, carbon based composites including carbon nanotubes, carbon quantum dots, graphitic carbon nitride, and graphene, covalent-organic frameworks based composites, metal based composites including metal carbides, metal halide perovskites, metal nitrides, metal oxides, metal phosphides, and metal sulfides, metal-organic frameworks based composites, plasmonic materials based composites and single atom based composites for CO₂ conversion, H₂ evolution, and pollutants oxidation are discussed elaborately. Finally, perspectives for further improvement in the design of composite materials for efficient photocatalysis are provided.

Room-temperature solution-phase epitaxial nucleation of PbS quantum dots on rutile TiO2 (100)

Owing to its simplicity and versatility, the successive ionic layer adsorption and reaction (SILAR) method is increasingly being employed to develop low-cost hetero-nanostructured sensitized oxide systems for solar energy conversion, such as solar cells and solar fuels schemes. Understanding the nature of the SILAR quantum dot (QD) nucleation and growth on an insulating oxide is then critical as it will determine the QD density and spatial distribution, as well as the optoelectronic properties of the QD/oxide interfaces (e.g. QD bandgap onset). Here, we demonstrate epitaxial nucleation of lead sulfide (PbS) QDs onto a planar rutile titanium dioxide (100) surface employing the SILAR method. The QDs nucleated by SILAR are crystalline structures characterized by a truncated pyramidal shape, with nucleation occurring preferentially along the rutile (010) and (001) crystal orientations. The PbS QD size distribution is constrained by lattice mismatch causing strain in the lead sulfide. These results highlight the potential of SILAR for the facile growth of high-quality epitaxial nanostructures in liquid phase, under ambient conditions and at room temperature.

High-Performance Synthesis of Phosphorus-Doped Graphene Materials and Stabilization of Phosphoric Micro- and Nanodroplets

A thermally induced cascade process leading to the formation of stable micro- and nanometer-size phosphoric droplets was developed starting from a molecular precursor. Microwave-induced pyrolysis of 1,2,3,4,5-pentaphenylphosphole oxide proceeded through a series of subsequent transformations involving formation of phosphorus-doped graphene oxide layers, seeding of carbon surface with phosphorus centers, and assembling of stable droplets. A complex nanostructured organization of the material was established in a remarkably short time of 3 min, and the process was performed in a thermally induced manner using microwave irradiation. High stability of the liquid phosphoric structures on the surface of doped graphene oxide over a few-month period was demonstrated, as well as under challenging conditions in organic solvents (chloroform, methylene chloride, or toluene media) and even under sonication. Detailed examination of this material by electron microscopy and a number of analytical methods showed its unique organization at the nanoscale, whereas computational modeling revealed unusually strong binding of phosphorus oxide P₄O₁₀ to the graphene surface. The study demonstrates a fascinating opportunity to access a complex nanostructured multicomponent material from a single and easily available molecular precursor.

P-GaSe/N-MoS2 Vertical Heterostructures Synthesized by van der Waals Epitaxy for Photoresponse Modulation

The important role of p-n junction in modulation of the optoelectronic properties of semiconductors is widely cognized. In this work, for the first time the synthesis of p-GaSe/n-MoS₂ heterostructures via van der Waals expitaxial growth is reported, although a considerable lattice mismatching of ≈18% exists. According to the simulation, a significant type II p-n junction barrier located at the interface is expected to be formed, which can modulate optoelectronic properties of MoS₂ effectively. It is intriguing to reveal that the presence of GaSe can result in obvious Raman and photoluminescence (PL) shift of MoS₂ compared to that of pristine one, more interestingly, for PL peak shift, the effect of GaSe-induced tensile strain on MoS₂ has overcome the p-doping effect of GaSe, evidencing the strong interlayer coupling between GaSe and MoS₂ . As a result, the photoresponse rate of heterostructures is improved by almost three orders of magnitude compared with that of pristine MoS₂ .

Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications

In this review, we report on fabrication paths, challenges, and emerging solutions to integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing standard Si technology. Their potential as laser gain material for the use of optical intra- and inter-chip interconnects as well as possibilities to combine a single-photon-source-based quantum cryptographic means with Si technology will be discussed. We propose that the mandatory addressability of the light emitters can be achieved by a combination of organized QD growth assisted by templated self-assembly, and advanced inter-QD defect engineering to boost the optical emissivity of group-IV QDs at room-temperature. Those two main parts, the site-controlled growth and the light emission enhancement in QDs through the introduction of single defects build the main body of the review. This leads us to a roadmap for the necessary further development of this emerging field of CMOS-compatible group-IV QD light emitters for on-chip applications.

Self-assembled Cubic Boron Nitride Nanodots

One of the low-dimensional Boron Nitride (BN) forms, namely, cubic-BN (c-BN) nanodots (NDs), offers a variety of novel opportunities in battery, biology, deep ultraviolet light emitting diodes, sensors, filters, and other optoelectronic applications. To date, the attempts towards producing c-BN NDs were mainly performed under extreme high-temperature/high-pressure conditions and resulted in c-BN NDs with micrometer sizes, mixture of different BN phases, and containing process-related impurities/contaminants. To enhance device performance for those applications by taking advantage of size effect, pure, sub-100 nm c-BN NDs are necessary. In this paper, we report self-assembled growth of c-BN NDs on cobalt and nickel substrates by plasma-assisted molecular beam epitaxy. It is found that the nucleation, formation, and morphological properties of c-BN NDs can be closely correlated with the nature of substrate including catalysis effect, lattice-mismatch-induced strain, and roughness, and growth conditions, in particular, growth time and growth temperature. The mean lateral size of c-BN NDs on cobalt scales from 175 nm to 77 nm with the growth time. The growth mechanism of c-BN NDs on metal substrates is concluded to be Volmer-Weber (VW) mode. A simplified two-dimensional numerical modeling shows that the elastic strain energy plays a key role in determining the total formation energy of c-BN NDs on metals.

Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates

We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures.

Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates

We investigate the optical properties of ordered Ge quantum dots (QDs) by means of micro-photoluminescence spectroscopy (PL). These were grown on pit-patterned Si(001) substrates with a wide range of pit-periods and thus inter QD-distances (425-3400 nm). By exploiting almost arbitrary inter-QD distances achievable in this way we are able to choose the number of QDs that contribute to the PL emission in a range between 70 and less than three QDs. This well-defined system allows us to clarify, by PL-investigation, several points which are important for the understanding of the formation and optical properties of ordered QDs. We directly trace and quantify the amount of Ge transferred from the surrounding wetting layer (WL) to the QDs in the pits. Moreover, by exploiting different pit-shapes, we reveal the role of strain-induced activation energy barriers that have to be overcome for charge carriers generated outside the dots. These need to diffuse between the energy minimum of the WL in and between the pits, and the one in the QDs. In addition, we demonstrate that the WL in the pits is already severely intermixed with Si before upright QDs nucleate, which further enhances intermixing of ordered QDs as compared to QDs grown on planar substrates. Furthermore, we quantitatively determine the amount of Ge transferred by surface diffusion through the border region between planar and patterned substrate. This is important for the growth of ordered islands on patterned fields of finite size. We highlight that the Ge WL-facets in the pits act as PL emission centres, similar to upright QDs.

Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes

We report the growth of high-quality GaN layer on single-walled carbon nanotubes (SWCNTs) and graphene hybrid structure (CGH) as intermediate layer between GaN and sapphire substrate by metal-organic chemical vapor deposition (MOCVD) and fabrication of light emitting diodes (LEDs) using them. The SWCNTs on graphene act as nucleation seeds, resulting in the formation of kink bonds along SWCNTs with the basal plane of the substrate. In the x-ray diffraction, Raman and photoluminescence spectra, high crystalline quality of GaN layer grown on CGH/sapphire was observed due to the reduced threading dislocation and efficient relaxation of residual compressive strain caused by lateral overgrowth process. When applied to the LED structure, the current-voltage characteristics and electroluminescence (EL) performance exhibit that blue LEDs fabricated on CGH/sapphire well-operate at high injection currents and uniformly emit over the whole emission area. We expect that CGH can be applied for the epitaxial growth of GaN on various substrates such as Si and MgO, which can be a great advantage in electrical and thermal properties of optical devices fabricated on them.