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Kumar S, Fossard F, Amiri G, Chauveau JM, Sallet V. MOCVD Growth and Structural Properties of ZnS Nanowires: A Case Study of Polytypism. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2323. [PMID: 35889548 PMCID: PMC9317335 DOI: 10.3390/nano12142323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2022] [Revised: 07/01/2022] [Accepted: 07/03/2022] [Indexed: 02/04/2023]
Abstract
Controlling the morphology, orientation, and crystal phase of semiconductor nanowires is crucial for their future applications in nanodevices. In this work, zinc sulfide (ZnS) nanowires have been grown by metalorganic chemical vapor deposition (MOCVD), using gold or gold-gallium alloys as catalyst. At first, basic studies on MOCVD growth regimes (mass-transport, zinc- or sulfur- rich conditions) have been carried out for ZnS thin films. Subsequently, the growth of ZnS nanowires was investigated, as a function of key parameters such as substrate temperature, S/Zn ratio, physical state and composition of the catalyst droplet, and supersaturation. A detailed analysis of the structural properties by transmission electron microscopy (TEM) is given. Depending on the growth conditions, a variety of polytypes is observed: zinc-blende (3C), wurtzite (2H) as well as an uncommon 15R crystal phase. It is demonstrated that twinning superlattices, i.e., 3C structures with periodic twin defects, can be achieved by increasing the Ga concentration of the catalyst. These experimental results are discussed in the light of growth mechanisms reported for semiconductor nanowires. Hence, in this work, the control of ZnS nanowire structural properties appears as a case study for the better understanding of polytypism in semiconductor 1D nanostructures.
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Affiliation(s)
- Sumit Kumar
- Groupe d’Étude de la Matière Condensée (GEMAC), Centre National de la Recherche Scientifique, Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles, France; (S.K.); (G.A.); (J.-M.C.)
| | - Frédéric Fossard
- Laboratoire d’Étude des Microstructures (LEM), Centre National de la Recherche Scientifique, Office National d’Etudes et de Recherches Aérospatiales, Université Paris-Saclay, 29 Avenue Division Leclerc, 92322 Chatillon, France;
| | - Gaelle Amiri
- Groupe d’Étude de la Matière Condensée (GEMAC), Centre National de la Recherche Scientifique, Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles, France; (S.K.); (G.A.); (J.-M.C.)
| | - Jean-Michel Chauveau
- Groupe d’Étude de la Matière Condensée (GEMAC), Centre National de la Recherche Scientifique, Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles, France; (S.K.); (G.A.); (J.-M.C.)
| | - Vincent Sallet
- Groupe d’Étude de la Matière Condensée (GEMAC), Centre National de la Recherche Scientifique, Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles, France; (S.K.); (G.A.); (J.-M.C.)
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Kim D, Ahmed T, Crossley K, Baldwin JK, Ra Shin SH, Kim Y, Sheehan C, Li N, Pete DV, Han HH, Yoo J. A controlled nucleation and growth of Si nanowires by using a TiN diffusion barrier layer for lithium-ion batteries. NANOSCALE ADVANCES 2022; 4:1962-1969. [PMID: 36133406 PMCID: PMC9418421 DOI: 10.1039/d1na00844g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2021] [Accepted: 03/08/2022] [Indexed: 06/16/2023]
Abstract
Uniform size of Si nanowires (NWs) is highly desirable to enhance the performance of Si NW-based lithium-ion batteries. To achieve a narrow size distribution of Si NWs, the formation of bulk-like Si structures such as islands and chunks needs to be inhibited during nucleation and growth of Si NWs. We developed a simple approach to control the nucleation of Si NWs via interfacial energy tuning between metal catalysts and substrates by introducing a conductive diffusion barrier. Owing to the high interfacial energy between Au and TiN, agglomeration of Au nanoparticle catalysts was restrained on a TiN layer which induced the formation of small Au nanoparticle catalysts on TiN-coated substrates. The resulting Au catalysts led to the nucleation and growth of Si NWs on the TiN layer with higher number density and direct integration of the Si NWs onto current collectors without the formation of bulk-like Si structures. The lithium-ion battery anodes based on Si NWs grown on TiN-coated current collectors showed improved specific gravimetric capacities (>30%) for various charging rates and enhanced capacity retention up to 500 cycles of charging-discharging.
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Affiliation(s)
- Dongheun Kim
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory Los Alamos NM 87545 USA
| | - Towfiq Ahmed
- T-4, Los Alamos National Laboratory Los Alamos NM 87545 USA
| | - Kenneth Crossley
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory Los Alamos NM 87545 USA
| | - J Kevin Baldwin
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory Los Alamos NM 87545 USA
| | - Sun Hae Ra Shin
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory Los Alamos NM 87545 USA
| | - Yeonhoo Kim
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory Los Alamos NM 87545 USA
| | - Chris Sheehan
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory Los Alamos NM 87545 USA
| | - Nan Li
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory Los Alamos NM 87545 USA
| | - Doug V Pete
- Center for Integrated Nanotechnologies, Sandia National Laboratories Albuquerque NM 87110 USA
| | - Henry H Han
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory Los Alamos NM 87545 USA
| | - Jinkyoung Yoo
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory Los Alamos NM 87545 USA
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Du L, Sun H. Facile synthesis of ZnO/SnO 2 hybrids for highly selective and sensitive detection of formaldehyde. NEW J CHEM 2022. [DOI: 10.1039/d1nj06186k] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
The ZnO–SnO2 hybrids show high gas responses and good selectivity to formaldehyde.
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Affiliation(s)
- Liyong Du
- Department of Materials and Chemical Engineering, Taiyuan University, Taiyuan 030032, P. R. China
| | - Heming Sun
- College of Physics, Jilin University, Changchun 130012, P. R. China
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Maliakkal CB, Tornberg M, Jacobsson D, Lehmann S, Dick KA. Vapor-solid-solid growth dynamics in GaAs nanowires. NANOSCALE ADVANCES 2021; 3:5928-5940. [PMID: 36132677 PMCID: PMC9418180 DOI: 10.1039/d1na00345c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2021] [Accepted: 08/05/2021] [Indexed: 05/17/2023]
Abstract
Semiconductor nanowires are promising material systems for coming-of-age nanotechnology. The usage of the vapor-solid-solid (VSS) route, where the catalyst used for promoting axial growth of nanowires is a solid, offers certain advantages compared to the common vapor-liquid-solid (VLS) route (using a liquid catalyst). The VSS growth of group-IV elemental nanowires has been investigated by other groups in situ during growth in a transmission electron microscope (TEM). Though it is known that compound nanowire growth has different dynamics compared to elemental semiconductors, the layer growth dynamics of VSS growth of compound nanowires have not been studied yet. Here we investigate for the first time controlled VSS growth of compound nanowires by in situ microscopy, using Au-seeded GaAs as a model system. The ledge-flow growth kinetics and dynamics at the wire-catalyst interface are studied and compared for liquid and solid catalysts under similar growth conditions. Here the temperature and thermal history of the system are manipulated to control the catalyst phase. In the first experiment discussed here we reduce the growth temperature in steps to solidify the initially liquid catalyst, and compare the dynamics between VLS and VSS growth observed at slightly different temperatures. In the second experiment we exploit thermal hysteresis of the system to obtain both VLS and VSS at the same temperature. The VSS growth rate is comparable or slightly slower than the VLS growth rate. Unlike in the VLS case, during VSS growth we frequently observe that a new layer starts before the previous layer is completely grown, i.e., 'multilayer growth'. Understanding the VSS growth mode enables better control of nanowire properties by widening the range of usable nanowire growth parameters.
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Affiliation(s)
- Carina B Maliakkal
- Centre for Analysis and Synthesis, Lund University Box 124 22100 Lund Sweden
- Solid State Physics, Lund University Box 118 22100 Lund Sweden
- NanoLund, Lund University Box 118 22100 Lund Sweden
| | - Marcus Tornberg
- Centre for Analysis and Synthesis, Lund University Box 124 22100 Lund Sweden
- Solid State Physics, Lund University Box 118 22100 Lund Sweden
- NanoLund, Lund University Box 118 22100 Lund Sweden
| | - Daniel Jacobsson
- Centre for Analysis and Synthesis, Lund University Box 124 22100 Lund Sweden
- NanoLund, Lund University Box 118 22100 Lund Sweden
- National Center for High Resolution Electron Microscopy, Lund University Box 124 22100 Lund Sweden
| | - Sebastian Lehmann
- Solid State Physics, Lund University Box 118 22100 Lund Sweden
- NanoLund, Lund University Box 118 22100 Lund Sweden
| | - Kimberly A Dick
- Centre for Analysis and Synthesis, Lund University Box 124 22100 Lund Sweden
- Solid State Physics, Lund University Box 118 22100 Lund Sweden
- NanoLund, Lund University Box 118 22100 Lund Sweden
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Zhao Q, Zhuang G, Zhao Y, Yang L, Zhao J. Y-doped In 2O 3 hollow nanocubes for improved triethylamine-sensing performance. NEW J CHEM 2021. [DOI: 10.1039/d1nj00452b] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
Y-In2O3 hollow nanocubes show enhanced triethylamine gas sensing properties, with a high response and an ultra-fast response-recovery speed.
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Affiliation(s)
- Qi Zhao
- School of Physics and Electronics Engineering
- Yancheng Teachers University
- Yancheng 224002
- China
| | - Guoce Zhuang
- School of Physics and Electronics Engineering
- Yancheng Teachers University
- Yancheng 224002
- China
| | - Yongbing Zhao
- School of Physics and Electronics Engineering
- Yancheng Teachers University
- Yancheng 224002
- China
| | - Liangliang Yang
- School of Physics and Electronics Engineering
- Yancheng Teachers University
- Yancheng 224002
- China
| | - Jinshan Zhao
- Dongying Huize Agricultural Technology Co., Ltd
- Dongying 257000
- China
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Du L, Wang D, Gu K, Zhang M. Construction of PdO-decorated double-shell ZnSnO 3 hollow microspheres for n-propanol detection at low temperature. Inorg Chem Front 2021. [DOI: 10.1039/d0qi01292k] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
The sensor based on 4 wt% PdO-loaded double-shell ZnSnO3 hollow microspheres shows rapid response/recovery speed to n-propanol at low working temperature.
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Affiliation(s)
- Liyong Du
- State key Laboratory of Superhard Materials
- Jilin University
- Changchun 130012
- People's Republic of China
| | - Dongxue Wang
- State key Laboratory of Superhard Materials
- Jilin University
- Changchun 130012
- People's Republic of China
| | - Kuikun Gu
- State key Laboratory of Superhard Materials
- Jilin University
- Changchun 130012
- People's Republic of China
| | - Mingzhe Zhang
- State key Laboratory of Superhard Materials
- Jilin University
- Changchun 130012
- People's Republic of China
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Kolíbal M, Pejchal T, Musálek T, Šikola T. Catalyst-substrate interaction and growth delay in vapor-liquid-solid nanowire growth. NANOTECHNOLOGY 2018; 29:205603. [PMID: 29509147 DOI: 10.1088/1361-6528/aab474] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Understanding of the initial stage of nanowire growth on a bulk substrate is crucial for the rational design of nanowire building blocks in future electronic and optoelectronic devices. Here, we provide in situ scanning electron microscopy and Auger microscopy analysis of the initial stage of Au-catalyzed Ge nanowire growth on different substrates. Real-time microscopy imaging and elementally resolved spectroscopy clearly show that the catalyst dissolves the underlying substrate if held above a certain temperature. If the substrate dissolution is blocked (or in the case of heteroepitaxy) the catalyst needs to be filled with nanowire material from the external supply, which significantly increases the initial growth delay. The experiments presented here reveal the important role of the substrate in metal-catalyzed nanowire growth and pave the way for different growth delay mitigation strategies.
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Affiliation(s)
- Miroslav Kolíbal
- Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czechia. CEITEC BUT, Brno University of Technology, Technická 10, 61669 Brno, Czechia
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Zannier V, Rossi F, Dubrovskii VG, Ercolani D, Battiato S, Sorba L. Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces. NANO LETTERS 2018; 18:167-174. [PMID: 29186660 DOI: 10.1021/acs.nanolett.7b03742] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
The possibility to expand the range of material combinations in defect-free heterostructures is one of the main motivations for the great interest in semiconductor nanowires. However, most axial nanowire heterostructures suffer from interface compositional gradients and kink formation, as a consequence of nanoparticle-nanowire interactions during the metal-assisted growth. Understanding such interactions and how they affect the growth mode is fundamental to achieve a full control over the morphology and the properties of nanowire heterostructures for device applications. Here we demonstrate that the sole parameter affecting the growth mode (straight or kinked) of InP segments on InAs nanowire stems by the Au-assisted method is the nanoparticle composition. Indeed, straight InAs-InP nanowire heterostructures are obtained only when the In/Au ratio in the nanoparticles is low, typically smaller than 1.5. For higher In content, the InP segments tend to kink. Tailoring the In/Au ratio by the precursor fluxes at a fixed growth temperature enables us to obtain straight and radius-uniform InAs-InP nanowire heterostructures (single and double) with atomically sharp interfaces. We present a model that is capable of describing all the experimentally observed phenomena: straight growth versus kinking, the stationary nanoparticle compositions in pure InAs and InAs-InP nanowires, the crystal phase trends, and the interfacial abruptness. By taking into account different nanowire/nanoparticle interfacial configurations (forming wetting or nonwetting monolayers in vertical or tapered geometry), our generalized model provides the conditions of nanoparticle stability and abrupt heterointerfaces for a rich variety of growth scenarios. Therefore, our results provide a powerful tool for obtaining high quality InAs-InP nanowire heterostructures with well-controlled properties and can be extended to other material combinations based on the group V interchange.
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Affiliation(s)
- Valentina Zannier
- NEST, Istituto Nanoscienze - CNR and Scuola Normale Superiore , Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Francesca Rossi
- IMEM - CNR , Parco Area delle Scienze 37/A, 43124 Parma, Italy
| | - Vladimir G Dubrovskii
- ITMO University , Kronverkskiy Pr. 49, 197101 Saint Petersburg, Russia
- Ioffe Institute RAS , Politekhnicheskaya 26, 194021 Saint Petersburg, Russia
| | - Daniele Ercolani
- NEST, Istituto Nanoscienze - CNR and Scuola Normale Superiore , Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Sergio Battiato
- NEST, Istituto Nanoscienze - CNR and Scuola Normale Superiore , Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Lucia Sorba
- NEST, Istituto Nanoscienze - CNR and Scuola Normale Superiore , Piazza San Silvestro 12, 56127 Pisa, Italy
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Whiticar AM, Mårtensson EK, Nygård J, Dick KA, Bolinsson J. Annealing of Au, Ag and Au-Ag alloy nanoparticle arrays on GaAs (100) and (111)B. NANOTECHNOLOGY 2017; 28:205702. [PMID: 28445163 DOI: 10.1088/1361-6528/aa6aef] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Metal nanoparticles (NPs), in particular gold NPs, are often used in the fabrication process of semiconductor nanowires. Besides being able to induce the 1D crystallization of new material, it is highly beneficial if the NPs can be used to dictate the position and diameter of the final nanowire structure. To achieve well-defined NP arrays of varying diameter and pitch distances for nanowire growth, it is necessary to understand and control the effect that a pre-growth annealing process may have on the pre-defined NP arrays. Recently, it has been demonstrated that silver (Ag) may be an alternative to using gold (Au) NPs as seed for particle-seeded nanowire fabrication. This work brings light onto the effect of annealing of Au, Ag and Au-Ag alloy metal NP arrays in two commonly used epitaxial systems, the molecular beam epitaxy (MBE) and the metalorganic vapor phase epitaxy (MOVPE). The metal NP arrays are fabricated with the aid of electron beam lithography on GaAs 100 and 111B wafers and the evolution of the NPs with respect to shape, size and position on the surfaces is studied after annealing using scanning electron microscopy. We find that while the Au NP arrays are found to be stable when annealed up to 600 °C in a MOVPE system, a diameter and pitch dependent splitting of the particles is seen for annealing in a MBE system. The Ag NP arrays are found to be less stable, with smaller diameters (≤50 nm) dissolving during the annealing process in both epitaxial systems. In general, the mobility of the NPs is observed to differ between the two the GaAs 100 and 111B surfaces. Finally, our observations on the effect of annealing on Au-Ag alloy NP arrays suggest that these NP can withstand necessary annealing conditions for a complete de-oxidation of GaAs surfaces in both MOVPE and MBE.
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Affiliation(s)
- Alexander M Whiticar
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark
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Naumenko D, Zannier V, Grillo V, Cassese D, Priante G, dal Zilio S, Rubini S, Lazzarino M. Enhanced plasmonic properties of gold-catalysed semiconductor nanowires. NANOSCALE 2014; 6:13651-13659. [PMID: 25274074 DOI: 10.1039/c4nr03913k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
A key challenge for the development of plasmonic nanodevices is their integration into active semiconducting structures. Gold-catalysed semiconductor nanowires are promising candidates for their bottom-up growth process that aligns a single gold nanoparticle at each nanowire apex. Unfortunately these show extremely poor plasmonic properties. In this work, we propose a way to enhance their plasmonic resonance up to those of ideal and isolated gold nanoparticles. A suitable purification protocol compatible with GaAs and ZnSe molecular beam epitaxy of nanowires is used to produce plasmonic active nanowires, which were used to enhance the Raman signal of pentacene and graphene oxide. Enhancement factors up to three orders of magnitude are demonstrated.
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Affiliation(s)
- Denys Naumenko
- IOM-CNR Laboratorio TASC, AREA Science Park, Basovizza, 34139 Trieste, Italy.
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