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Sahoo SR, Sharma S, Sahu S. A computational study of anisotropic charge transport in air-stable fluorinated benzobisbenzothiophene (FBBBT) derivatives. J Mol Model 2019; 26:14. [PMID: 31853659 DOI: 10.1007/s00894-019-4251-9] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2019] [Accepted: 11/12/2019] [Indexed: 01/18/2023]
Abstract
A computational study of anisotropical charge transport properties of fluorinated benzobisbenzothiohphene derivatives (FBBBT) is presented. The values of IPadia of all FBBBTs are found in the range of 6.00-6.20 eV inferring the fact that the investigated compounds have ambient air-stability. In addition, the energy levels of FBBBT s are found to be lower than those of benzobisbenzothiophene (BBBT) compound indicating higher charge carrier stability in the former. Hirshfield surface analyses showed that, in all the studied compounds, the principal identifiable interaction were mostly due to F⋯H and H⋯H intermolecular couplings with no contribution from S⋯S bondings. The calculated maximum μhole(μelec) value of the compounds FBBBT-a and FBBBT-b was found to be 0.483 (0.794) cm2V- 1s- 1 and 0.688 (0.542) cm2V- 1s- 1 respectively in the direction of transistor channel (Φ = 93.39 ∘(273.30∘) for FBBBT-a and Φ = 92.24 ∘/272.72 ∘ for FBBBT-b). For FBBBT-c, the maximum μelec(μhole) value of 0.933 (0.233) cm2V- 1s- 1 appeared for Φ = 0 ∘/179.90 ∘. In addition, the compounds FBBBT-a and FBBBT-b possess two additional fluorine atoms attached at the X positions in the backbone, which result in an increment in μelec values (1.4 times and 0.78 times higher than μhole) in these two compounds at a particular crystal direction.
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Affiliation(s)
- Smruti Ranjan Sahoo
- High Performance Computing Lab, Department of Applied Physics, Indian Institute of Technology (ISM), Dhanbad, Jharkhand, 826004, India
| | - Sagar Sharma
- Department of Chemistry, School of Fundamental and Applied Sciences, Assam Don Bosco University, Tapesia Gardens, Guwahati, Assam, 782402, India
| | - Sridhar Sahu
- High Performance Computing Lab, Department of Applied Physics, Indian Institute of Technology (ISM), Dhanbad, Jharkhand, 826004, India.
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Wang CZ, Feng X, Elsegood MRJ, Warwick TG, Teat SJ, Redshaw C, Bi YS, Yamato T. Pyrene-Fused Pyrazaacenes with Eight Rectilinearly Arranged Aromatic Rings. ASIAN J ORG CHEM 2018. [DOI: 10.1002/ajoc.201800608] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2023]
Affiliation(s)
- Chuan-Zeng Wang
- School of Chemical Engineering; Shandong University of Technology; Zibo 255049 P. R. China
- Department of Applied Chemistry; Faculty of Science and Engineering; Saga University; Honjo-machi 1 Saga 840-8502 Japan
| | - Xing Feng
- Faculty of Material and Energy Engineering; Guangdong University of Technology; Guangdong 510006 China
| | | | - Thomas G. Warwick
- Chemistry Department; Loughborough University; Loughborough LE11 3TU UK
| | - Simon J. Teat
- Advanced Light Source; Lawrence Berkeley National Lab; 1 cyclotron Rd Berkeley, CA 94720 USA
| | - Carl Redshaw
- Department of Chemistry & Biochemistry; The University of Hull; Cottingham Road, Hull Yorkshire HU6 7RX UK
| | - Yu-Sui Bi
- School of Chemical Engineering; Shandong University of Technology; Zibo 255049 P. R. China
| | - Takehiko Yamato
- Department of Applied Chemistry; Faculty of Science and Engineering; Saga University; Honjo-machi 1 Saga 840-8502 Japan
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Structure-property relationships of benzo[2,1- b :3,4- b ’] bis [1]benzothiophenes for organic field effect transistors. Tetrahedron Lett 2018. [DOI: 10.1016/j.tetlet.2018.05.064] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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Zheng J, Zhang K, Fang Y, Zuo Y, Duan Y, Zhuo Z, Chen X, Yang W, Lin Y, Wong MS, Pan F. How to Optimize the Interface between Photosensitizers and TiO2 Nanocrystals with Molecular Engineering to Enhance Performances of Dye-Sensitized Solar Cells? ACS APPLIED MATERIALS & INTERFACES 2015; 7:25341-25351. [PMID: 26510212 DOI: 10.1021/acsami.5b07591] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
In this work, the interfacial properties of a series of metal-free organic naphthodithienothiophene (NDTT)-based photosensitizers adsorbed on TiO2 surfaces were investigated by a combination of ab initio calculations and experimental measurements. The calculations and experiments reveal that because of the efficient charge transfer from the adsorbed dyes to TiO2 nanocrystal surface there is an upward shift for the energy levels of dyes and a downward shift for the conduction band of surface TiO2 and that the band gaps for both of them are also reduced. Such electronic level alignments at the interface would lead to increased light absorption range by adsorbed dyes and increased driving force for charge injection but reduced open-circuit potential (V(oc)). More interestingly, we found that molecule engineering of the donor group and introducing additional electron-withdrawing unit have little effect on the electronic level alignments at the interface (because band gaps of the dyes adsorbed on TiO2 surfaces become approximately identical when compared with those of the dyes measured in solution) but that they can affect the steric effect and the charge separation at the interface to tune V(oc) and the short-circuit current density (J(sc)) effectively. All these findings suggest that optimizing the interfacial properties of dyes adsorbed on TiO2 surfaces by synchronously modifying steric effects of dye molecules anchored on TiO2 and charge-transfer and separation properties at the interfaces is important to construct efficient dye-sensitized solar cells.
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Affiliation(s)
- Jiaxin Zheng
- School of Advanced Materials, Shenzhen Graduate School, Peking University , Shenzhen 518055, PR China
| | - Kai Zhang
- Department of Chemistry and Institute of Molecular Functional Materials, Hong Kong Baptist University , Kowloon Tong, Hong Kong SAR, PR China
| | - Yanyan Fang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, PR China
| | - Yunxing Zuo
- School of Advanced Materials, Shenzhen Graduate School, Peking University , Shenzhen 518055, PR China
| | - Yandong Duan
- School of Advanced Materials, Shenzhen Graduate School, Peking University , Shenzhen 518055, PR China
| | - Zengqing Zhuo
- School of Advanced Materials, Shenzhen Graduate School, Peking University , Shenzhen 518055, PR China
- Advanced Light Source, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | - Xuanming Chen
- Department of Chemistry and Institute of Molecular Functional Materials, Hong Kong Baptist University , Kowloon Tong, Hong Kong SAR, PR China
| | - Wanli Yang
- Advanced Light Source, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | - Yuan Lin
- School of Advanced Materials, Shenzhen Graduate School, Peking University , Shenzhen 518055, PR China
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, PR China
| | - Man Shing Wong
- Department of Chemistry and Institute of Molecular Functional Materials, Hong Kong Baptist University , Kowloon Tong, Hong Kong SAR, PR China
| | - Feng Pan
- School of Advanced Materials, Shenzhen Graduate School, Peking University , Shenzhen 518055, PR China
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