Polyimide-derived graphite barrier layer adhered to seed crystals to improve the quality of grown silicon carbide

A facial method was developed to in situ fabricate a graphite layer on a SiC seed crystal to reduce the formation of defects during the growth of SiC ingots. The formulated PI matrix combined with an appropriate coupling agent could strongly adhere to SiC and be transformed into protective layers for SiC seed crystals during SiC growth. The thermally conductive graphite layers on SiC effectively reduce the backside diffusion of Si, inhibit the loss of Si from seed crystals during high-temperature growing process, and consequently lead to fewer defects formed in the SiC ingot. The graphitization degree, chemical state, roughness and morphology of films were investigated in this work.

Functionalized Multiwalled Carbon Nanotube-Reinforced Polyimide Composite Films with Enhanced Mechanical and Thermal Properties

Polyimide- (PI-) based nanocomposites containing the 4,4′-diaminodiphenyl ether- (ODA-) modified multiwalled carbon nanotube (MWCNT) filler were successfully prepared. The PI/MWCNTs-ODA composite films exhibit high thermal conductivity and excellent mechanical property. The optimal value of thermal conductivity of the PI/MWCNTs-ODA composite film is 0.4397 W/mK with 3 wt.% filler loading, increased by 221.89% in comparison with that of the pure PI film. In addition, the tensile strength of the PI/MWCNTs-ODA composite film is 141.48 MPa with 3 wt.% filler loading, increased by 20.74% in comparison with that of the pure PI film. This work develops a new strategy to achieve a good balance between the high thermal conductivity and excellent mechanical properties of polyimide composite films by using functionalized carbon nanotubes as an effective thermal conductive filler.

High-temperature resistive gas sensors based on ZnO/SiC nanocomposites

Increasing requirements for environmental protection have led to the need for the development of control systems for exhaust gases monitored directly at high temperatures in the range of 300-800 °C. The development of high-temperature gas sensors requires the creation of new materials that are stable under these conditions. The stability of nanostructured semiconductor oxides at high temperature can be enhanced by creating composites with highly dispersed silicon carbide (SiC). In this work, ZnO and SiC nanofibers were synthesized by electrospinning of polymer solutions followed by heat treatment, which is necessary for polymer removal and crystallization of semiconductor materials. ZnO/SiC nanocomposites (15-45 mol % SiC) were obtained by mixing the components in a single homogeneous paste with subsequent thermal annealing. The composition and microstructure of the materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The electrophysical and gas sensing properties of the materials were investigated by in situ conductivity measurements in the presence of the reducing gases CO and NH₃ (20 ppm), in dry conditions (relative humidity at 25 °C RH₂₅ = 0) and in humid air (RH₂₅ = 30%) in the temperature range 400-550 °C. The ZnO/SiC nanocomposites were characterized by a higher concentration of chemisorbed oxygen, higher activation energy of conductivity, and higher sensor response towards CO and NH₃ as compared with ZnO nanofibers. The obtained experimental results were interpreted in terms of the formation of an n-n heterojunction at the ZnO/SiC interface.

Effect of the functional diamine structure on the properties of a polyimide liquid crystal alignment film

A novel functional diamine containing triphenylamine moiety and biphenyl as well as a long alkyl chain, 4-dodecyloxy-biphenyl-4′,4′′-diaminotriphenylamine (DBDTA), was synthesized and characterized.

Synthesis of a novel polyimide used as liquid crystal vertical alignment layers

A novel functional diamine containing a triphenylamine moiety and a biphenyl group, N,N-bis(4-aminophenyl)-4-(biphenyl)-4′-aminophenyl ether (N0), was successfully synthesized and characterized.