Tolerance Factor and Phase Stability of the KCoO2-Type AMN2 Nitrides

In order to help understand the structural stability of KCoO2-type ternary nitrides AMN2, referring to perovskite structure, a tolerance factor t is proposed to describe the size effect on the phase/symmetry options of the experimentally accessible AMN2 nitrides. This leads to a range of t values above 0.946 for structurally stable KCoO2-type AMN2 nitrides with t values around 0.970 for the orthorhombic and tetragonal phase boundary. In contrast, most of AMN2 nitrides exhibit α-NaFeO2-type structure with t ∼ 0.898-0.946 and cations ordered or disordered rocksalt structure while t below 0.898. Employing the proposed criterion, the structure formation for other ternary AMN2 compositions with lanthanum and alkaline earth cations for the A sites were predicted, which was testified through the synthesis attempts and complemented by formation energy evaluations. The efforts to synthesize the ternary Lanthanide and alkaline earth-based AMN2 nitrides were unsuccessful, which could associate the structural instability with the large formation energies of lanthanide nitrides LaMN2 and the greater tolerance factor of 1.048 for BaTiN2. The experimentally already synthesized AMN2 nitrides could be categorized into three types with different tolerance factors, and scarce AMN2 nitrides with lower formation energies would be accessible using different synthetic routes beyond the traditional solid-state synthesis method.

Mechanistically Guided Materials Chemistry: Synthesis of Ternary Nitrides, CaZrN2 and CaHfN2

Recent computational studies have predicted many new ternary nitrides, revealing synthetic opportunities in this underexplored phase space. However, synthesizing new ternary nitrides is difficult, in part because intermediate and product phases often have high cohesive energies that inhibit diffusion. Here, we report the synthesis of two new phases, calcium zirconium nitride (CaZrN2) and calcium hafnium nitride (CaHfN2), by solid state metathesis reactions between Ca3N2 and MCl4 (M = Zr, Hf). Although the reaction nominally proceeds to the target phases in a 1:1 ratio of the precursors via Ca3N2 + MCl4 → CaMN2 + 2 CaCl2, reactions prepared this way result in Ca-poor materials (CaxM2-xN2, x < 1). A small excess of Ca3N2 (ca. 20 mol %) is needed to yield stoichiometric CaMN2, as confirmed by high-resolution synchrotron powder X-ray diffraction. In situ synchrotron X-ray diffraction studies reveal that nominally stoichiometric reactions produce Zr3+ intermediates early in the reaction pathway, and the excess Ca3N2 is needed to reoxidize Zr3+ intermediates back to the Zr4+ oxidation state of CaZrN2. Analysis of computationally derived chemical potential diagrams rationalizes this synthetic approach and its contrast from the synthesis of MgZrN2. These findings additionally highlight the utility of in situ diffraction studies and computational thermochemistry to provide mechanistic guidance for synthesis.

Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors

We report the synthesis and optoelectronic properties of high phase-purity (>94 mol %) bulk polycrystals of KCoO₂-type layered nitrides AETMN₂ (AE = Sr, Ba; and TM = Ti, Zr, Hf), which are expected to exhibit unique electron transport properties originating from their natural two-dimensional (2D) electronic structure, but high-purity intrinsic samples have yet been reported. The bulks were synthesized using a solid-state reaction between AENH and TMN precursors with NaN₃ to achieve high N chemical potential during the reaction. The AETMN₂ bulks are n-type semiconductors with optical band gaps of 1.63 eV for SrTiN₂, 1.97 eV for BaZrN₂, and 2.17 eV for BaHfN₂. SrTiN₂ and BaZrN₂ bulks show degenerated electron conduction due to the natural high-density electron doping and paramagnetic behavior in all of the temperature ranges examined, while such unintentional carrier generation is largely suppressed in BaHfN₂, which exhibits nondegenerated electron conduction. The BaHfN₂ sample also exhibits weak ferromagnetic behavior at temperatures lower than 35 K. Density functional theory calculations suggest that the high-density electron carriers in SrTiN₂ come from oxygen impurity substitution at the N site (O_N) acting as a shallow donor even if the high-N chemical potential synthesis conditions are employed. On the other hand, the formation energy of O_N becomes larger in BaHfN₂ because of the stronger TM-N chemical bonds. Present results demonstrate that the easiness of impurity incorporation is designed by density functional calculations to produce a more intrinsic semiconductor in wider chemical conditions, opening a way to cultivating novel functional materials that are sensitive to atmospheric impurities and defects.

Elastic, electronic, chemical bonding and thermodynamic properties of the ternary nitride Ca4TiN4: Ab initio predictions

In order to shed light on the unexplored properties of the ternary nitride Ca₄TiN₄, we report for the first time the results of an ab initio study of its structural, electronic, elastic, chemical bonding and thermodynamic properties. Calculated equilibrium structural parameters are in excellent concordance with available experimental data. Electronic properties were explored through the calculation of the energy band dispersions and density of states. It is found that Ca₄TiN₄ has an indirect band gap (Z-Γ) of 1.625 (1.701) eV using LDA (GGA). Nature of the chemical bonding was studied via Mulliken population analysis and charge density distribution map. It is found that the Ca-N bond is dominantly ionic, whereas the Ti-N one is dominantly covalent. Elastic properties of both single-crystal and polycrystalline phases of the title compound were explored in details using the stain-stress approach. Analysis of the calculated elastic moduli reveals that the title compound is mechanically stable, ductile and elastically anisotropic. Temperature and pressure dependencies of the unit-cell volume, bulk modulus, heat capacities, volume thermal expansion coefficient, Grüneisen parameter and Debye temperature were investigated based on the quasiharmonic Debye model.

Ternary nitride semiconductors in the rocksalt crystal structure

Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula Mgx TM 1-xN (TM = Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8 to 2.1 eV) and up to 100 cm2 V-1⋅s-1 electron mobility for MgZrN2 grown on MgO substrates. Complementary ab initio calculations reveal that these materials have disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder. These ternary Mgx TM 1-xN semiconductors are also structurally compatible both with binary TMN superconductors and main-group nitride semiconductors along certain crystallographic orientations. Overall, these results highlight Mgx TM 1-xN as a class of materials combining the semiconducting properties of main-group wurtzite nitrides and rocksalt structure of superconducting transition-metal nitrides.

On the Study of Ca and Mg Deintercalation from Ternary Tantalum Nitrides

Layered CaTaN₂ and MgTa₂N₃ and cubic Mg₂Ta₂N₄ were prepared by direct solid state reaction from the binary nitrides Ta₃N₅ and A₃N₂ (A: Mg, Ca). CaTaN₂ showed a slight Ca deficiency (0.11 moles per formula), and a monoclinic distortion from previously reported R3̅m symmetry, with space group C2/m and cell parameters a = 5.4011(2), b = 3.1434(1), c = 5.9464(2) Å and β = 107.91(3)°. Ca²⁺ and Mg²⁺ deintercalation was investigated in the three compounds both chemically and electrochemically. No significant Mg²⁺ extraction could be inferred for MgTa₂N₃ and Mg₂Ta₂N₄, neither after reaction with NO₂BF₄ nor after electrochemical oxidation at 100 °C in alkyl carbonate electrolytes. Rietveld refinement of the X-ray powder diffraction pattern of chemically oxidized Ca_0.89TaN₂ indicates a decrease of the Ca content to 0.34 concomitant to the disappearance of the monoclinic distortion and expansion of the interlayer space from 5.658 to 5.762 Å, space group R3̅m and cell parameters a = 3.1103(1) and c = 17.287(1) Å. Deintercalation in this compound was also achieved electrochemically at 100 °C. Results of density functional theory calculations seem to indicate that reaction mechanisms for CaTaN₂ oxidation additional and/or alternative to deintercalation are taking place, which is likely related to the loss of crystallinity observed upon oxidation and the irreversibility of the process.

Pressure modulates the phase stability and physical properties of zinc nitride iodine

To explore new stable phases in metal nitride halides, the structural, electronic and optical properties, and chemical bonding characteristics of Zn₂NI under pressure were studied on the basis of crystal structure predicting evolution and density function calculations.