Huang J, Zhao X, Zhang H, Bai J, Wang S, Wang C, Ma D, Hou Y. Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO.
RSC Adv 2019;
9:9392-9400. [PMID:
35520703 PMCID:
PMC9062018 DOI:
10.1039/c9ra00405j]
[Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2019] [Accepted: 03/18/2019] [Indexed: 11/21/2022] Open
Abstract
In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized. A sandwich type memory device based on PFO and PFO:ZnO, was fabricated using rotary-coating technology. I–V characteristics of the device were studied, and the effects of ZnO nanoparticle (NP) doping content on the performances of the device were discussed. The best doping content of ZnO NPs was found by processing the experimental results (4.76 wt%). Also, the stability of the device was tested, and it was found that the device remained stable after a long testing period. Furthermore, the switching mechanism of the device was discussed.
In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized.![]()
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