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Sun Y, Zhang B, Zhang S, Zhang D, Dong J, Long M. Strain modulation on the spin transport properties of PTB junctions with MoC 2 electrodes. Phys Chem Chem Phys 2022; 24:3875-3885. [PMID: 35088774 DOI: 10.1039/d1cp04563f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
Abstract
Based on MoC2 nanoribbons and poly-(terphenylene-butadiynylene) (PTB) molecules, we designed MoC2-PTB molecular spintronic devices and investigated their spin-dependent electron transport properties by using spin-polarized density functional theory and the non-equilibrium Green's function method. As a typical MXene material, it is found that the magnetic contribution of MoC2 nanoribbons mainly comes from the delocalized 3d electron of edge Mo atoms. Owing to the obvious spin-splitting near the Fermi level of the MoC2 nanoribbon electrode, the spin states can be effectively injected into the central scattering region under an external bias voltage. In addition, we also studied the effects of z-axis strain on the spin transport properties of the PTB molecular device, where the strain was controlled within the range of -9% to 9%. Under a compressed strain, spin current increases obviously, and the spin-filtering efficiency (SFE) decreases slightly. Nevertheless, under a tensile strain, we found that the SFE increases but spin current decreases. Moreover, z-axis strain can induce a negative differential resistance (NDR) effect at a high bias point. This work would expand the potential applications of new two-dimensional (2D) materials in the field of molecular spintronic devices.
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Affiliation(s)
- Yaoxing Sun
- Xinjiang Key Laboratory of Solid State Physics and Device, Xinjiang University, Urumqi, Xinjiang 830046, China. .,School of Physical Science and Technology, Xinjiang University, Urumqi, Xinjiang 830046, China
| | - Bei Zhang
- Xinjiang Key Laboratory of Solid State Physics and Device, Xinjiang University, Urumqi, Xinjiang 830046, China. .,School of Physical Science and Technology, Xinjiang University, Urumqi, Xinjiang 830046, China.,Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Shidong Zhang
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Dan Zhang
- School of Science, Hunan University of Technology, Zhuzhou 412007, China
| | - Jiwei Dong
- Xinjiang Key Laboratory of Solid State Physics and Device, Xinjiang University, Urumqi, Xinjiang 830046, China. .,School of Physical Science and Technology, Xinjiang University, Urumqi, Xinjiang 830046, China
| | - Mengqiu Long
- School of Physical Science and Technology, Xinjiang University, Urumqi, Xinjiang 830046, China.,Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
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Zhang L, Tong P. Electrical controllable spin pump based on a zigzag silicene nanoribbon junction. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:495303. [PMID: 29095145 DOI: 10.1088/1361-648x/aa97b8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We propose a possible electrical controllable spin pump based on a zigzag silicene nanoribbon ferromagnetic junction by applying two time-dependent perpendicular electric fields. By using the Keldysh Green's function method, we derive the analytic expression of the spin-resolved current at the adiabatic approximation and demonstrate that two asymmetric spin up and spin down currents can be pumped out in the device without an external bias. The pumped currents mainly come from the interplay between the photon-assisted spin pump effect and the electrically-modulated energy band structure of the tunneling junction. The spin valve phenomena are not only related to the energy gap opened by two perpendicular staggered potentials, but also dependent on the system parameters such as the pumping frequency, the pumping phase difference, the spin-orbit coupling and the Fermi level, which can be tuned by the electrical methods. The proposed device can also be used to produce a pure spin current and a 100% polarized spin current through the photon-assisted pumping process. Our investigations may provide an electrical manipulation of spin-polarized electrons in graphene-like pumping devices.
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Affiliation(s)
- Lin Zhang
- Department of Physics and Institute of Theoretical Physics, Nanjing Normal University, Nanjing 210023, People's Republic of China. Department of Applied Physics, College of Science, Nanjing Forestry University, Nanjing 210037, People's Republic of China
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Zhang D, Long M, Zhang X, Xu H. High performance bipolar spin filtering and switching functions of poly-(terphenylene-butadiynylene) between zigzag graphene nanoribbon electrodes. RSC Adv 2015. [DOI: 10.1039/c5ra17504f] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/29/2023] Open
Abstract
Using the nonequilibrium Green’s function method combined with spin-polarized DFT, we investigate the spin-resolved electronic transport properties of devices made of poly-(terphenylene-butadiynylene) (PTB) between zigzag graphene nanoribbon (ZGNR) electrodes.
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Affiliation(s)
- Dan Zhang
- Institute of Super-microstructure and Ultrafast Process in Advanced Materials
- School of Physics and Electronics
- Central South University
- Changsha 410083
- China
| | - Mengqiu Long
- Institute of Super-microstructure and Ultrafast Process in Advanced Materials
- School of Physics and Electronics
- Central South University
- Changsha 410083
- China
| | - Xiaojiao Zhang
- Physical Science and Technology College of Yichun University
- Yichun 336000
- China
| | - Hui Xu
- Institute of Super-microstructure and Ultrafast Process in Advanced Materials
- School of Physics and Electronics
- Central South University
- Changsha 410083
- China
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