|
1
|
Wang W, Jiang H, Li L, Li G. Two-dimensional group-III nitrides and devices: a critical review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:086501. [PMID: 34229312 DOI: 10.1088/1361-6633/ac11c4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2021] [Accepted: 07/06/2021] [Indexed: 06/13/2023]
Abstract
As third-generation semiconductors, group-III nitrides are promising for high power electronic and optoelectronic devices because of their wide bandgap, high electron saturation mobility, and other unique properties. Inspired by the thickness-dependent properties of two-dimensional (2D) materials represented by graphene, it is predicted that the 2D counterparts of group-III nitrides would have similar properties. However, the preparation of 2D group-III nitride-based materials and devices is limited by the large lattice mismatch in heteroepitaxy and the low rate of lateral migration, as well as the unsaturated dangling bonds on the surfaces of group-III nitrides. The present review focuses on theoretical and experimental studies on 2D group-III nitride materials and devices. Various properties of 2D group-III nitrides determined using simulations and theoretical calculations are outlined. Moreover, the breakthroughs in their synthesis methods and their underlying physical mechanisms are detailed. Furthermore, devices based on 2D group-III nitrides are discussed accordingly. Based on recent progress, the prospect for the further development of the 2D group-III nitride materials and devices is speculated. This review provides a comprehensive understanding of 2D group-III nitride materials, aiming to promote the further development of the related fields of nano-electronic and nano-optoelectronics.
Collapse
Affiliation(s)
- Wenliang Wang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong Special Administrative Region of China
| | - Hongsheng Jiang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Linhao Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Guoqiang Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| |
Collapse
|
|
2
|
Zhang X, Li H, Miao W, Shen Q, Wang J, Peng D, Liu J, Zhang Y. Vertically zeolitic imidazolate framework‐L coated mesh with dagger‐like structure for oil/water separation. AIChE J 2019. [DOI: 10.1002/aic.16596] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Xuke Zhang
- School of Chemical Engineering and Energy Zhengzhou University Zhengzhou China
| | - Hui Li
- School of Chemical Engineering and Energy Zhengzhou University Zhengzhou China
- Research Department of New Materials Zhengzhou Institute of Emerging Industrial Technology Zhengzhou China
| | - Weizhen Miao
- School of Chemical Engineering and Energy Zhengzhou University Zhengzhou China
| | - Qin Shen
- School of Chemical Engineering and Energy Zhengzhou University Zhengzhou China
| | - Jing Wang
- School of Chemical Engineering and Energy Zhengzhou University Zhengzhou China
| | - Donglai Peng
- School of Material & Chemical Engineering Zhengzhou University of Light Industry Zhengzhou China
| | - Jindun Liu
- School of Chemical Engineering and Energy Zhengzhou University Zhengzhou China
| | - Yatao Zhang
- School of Chemical Engineering and Energy Zhengzhou University Zhengzhou China
| |
Collapse
|
|
3
|
Wang W, Zheng Y, Li X, Li Y, Zhao H, Huang L, Yang Z, Zhang X, Li G. 2D AlN Layers Sandwiched Between Graphene and Si Substrates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1803448. [PMID: 30393921 DOI: 10.1002/adma.201803448] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2018] [Revised: 10/09/2018] [Indexed: 06/08/2023]
Abstract
Due to the superior thickness-dependent properties, 2D materials have exhibited great potential for applications in next-generation optoelectronic devices. Despite the significant progress that has been achieved, the synthesis of 2D AlN remains challenging. This work reports on the epitaxial growth of 2D AlN layers via utilizing physically transferred graphene on Si substrates by metal-organic chemical vapor deposition. The 2D AlN layers sandwiched between graphene and Si substrates are confirmed by annular bright-field scanning transmission electron microscopy and the effect of hydrogenation on the formation of 2D AlN layers is clarified by theoretical calculations with first-principles calculations based on density functional theory. Moreover, the bandgap of as-grown 2D AlN layers is theoretically predicted to be ≈9.63 eV and is experimentally determined to be 9.20-9.60 eV. This ultrawide bandgap semiconductor shows great promise in deep-ultraviolet optoelectronic applications. These results are expected to support innovative and front-end development of optoelectronic devices.
Collapse
Affiliation(s)
- Wenliang Wang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
- Guangdong Choicore Optoelectronics Co., Ltd, Heyuan, 517003, China
| | - Yulin Zheng
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Xiaochan Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Yuan Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Hui Zhao
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, 100022, China
| | - Liegen Huang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Zhichao Yang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Xiaona Zhang
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, 100022, China
| | - Guoqiang Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
- Guangdong Choicore Optoelectronics Co., Ltd, Heyuan, 517003, China
| |
Collapse
|
|
4
|
Studies on Preparation and Characterization of Aluminum Nitride-Coated Carbon Fibers and Thermal Conductivity of Epoxy Matrix Composites. COATINGS 2017. [DOI: 10.3390/coatings7080121] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
|