Temperature-controlled synthesis, thermodynamics and field emission properties of β-SiC/SiO2 coaxial heterojunction emitters

β-SiC/SiO₂ coaxial heterogeneous emitters composed of a SiC nanowire core and a uniform amorphous SiO₂ coating have been fabricated via the chemical vapor deposition (CVD) technique.

Nitrogen content and morphology dependent field emission properties of nitrogen-doped SiC nanowires and density functional calculations

N-Doped SiC NWs with varying N content have been synthesized via a one-step CVR, and they exhibit excellent FE properties.