Zhang WL, Tang MH, Xiong Y, Wang K, Wang ZP, Xiao YG, Yan SA, Li Z, He J. Influence of the annealing temperature of the Bi4Ti3O12 seeding layer on the structural and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films.
RSC Adv 2016. [DOI:
10.1039/c6ra13717b]
[Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Highly (117)-preferred Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) thin films with a Bi4Ti3O12 (BTO) seeding layer were prepared. The effects of BTO layer under annealing temperature from 550 to 700 °C on the structural and electrical properties of BNTM were studied.
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