Kumar M, Patel M, Kim HS, Kim J, Yi J. High-Speed, Self-Biased Broadband Photodetector-Based on a Solution-Processed Ag Nanowire/Si Schottky Junction.
ACS APPLIED MATERIALS & INTERFACES 2017;
9:38824-38831. [PMID:
29047269 DOI:
10.1021/acsami.7b14250]
[Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In this work, we demonstrate the effectiveness of Ag nanowires (AgNWs) to design a high-speed broadband photodetector. A simple AgNW solution was spin-coated on a Si substrate to form a Schottky junction. The junction properties were investigated using current-voltage characteristics and Mott-Schottky analysis. The present device had a remarkably fast response speed, e.g., rising time τr = 784 ns and fall time τf = 92 μs, with good reproducibility over a wide range of switching frequencies (50 Hz-50 kHz). Such a high performance was attributed to the strong electric field created at the AgNW/Si interface without an external electric field, enabling the efficient separation of photogenerated electron-hole pairs. The present study will open a new avenue to design future optoelectronic devices and energy devices including solar cells.
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