1
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Lou S, Lyu B, Chen J, Zhou X, Jiang W, Qiu L, Shen P, Ma S, Zhang Z, Xie Y, Wu Z, Chen Y, Xu K, Liang Q, Watanabe K, Taniguchi T, Xian L, Zhang G, Ouyang W, Ding F, Shi Z. Tip Growth of Quasi-Metallic Bilayer Graphene Nanoribbons with Armchair Chirality. NANO LETTERS 2024; 24:156-164. [PMID: 38147652 DOI: 10.1021/acs.nanolett.3c03534] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Graphene nanoribbons (GNRs), quasi one-dimensional (1D) narrow strips of graphene, have shown promise for high-performance nanoelectronics due to their exceptionally high carrier mobility and structurally tunable bandgaps. However, producing chirality-uniform GNRs on insulating substrates remains a big challenge. Here, we report the successful growth of bilayer GNRs with predominantly armchair chirality and ultranarrow widths (<5 nm) on insulating hexagonal boron nitride (h-BN) substrates using chemical vapor deposition (CVD). The growth of GNRs is catalyzed by transition metal nanoparticles, including Fe, Co, and Ni, through a unique tip-growth mechanism. Notably, GNRs catalyzed by Ni exhibit a high purity (97.3%) of armchair chirality. Electron transport measurements indicate that the ultrathin bilayer armchair GNRs exhibit quasi-metallic behavior. This quasi-metallicity is further supported by density functional theory (DFT) calculations, which reveal a significantly reduced bandgap in bilayer armchair GNRs. The chirality-specific GNRs reported here offer promising advancements for the application of graphene in nanoelectronics.
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Affiliation(s)
- Shuo Lou
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Bosai Lyu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jiajun Chen
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xianliang Zhou
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Wenwu Jiang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei 430072, China
- State Key Laboratory of Water Resources and Hydropower Engineering Science, Wuhan University, Wuhan 430072, China
| | - Lu Qiu
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Peiyue Shen
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Saiqun Ma
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhichun Zhang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yufeng Xie
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhenghan Wu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yi Chen
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Kunqi Xu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Qi Liang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Lede Xian
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Wengen Ouyang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei 430072, China
- State Key Laboratory of Water Resources and Hydropower Engineering Science, Wuhan University, Wuhan 430072, China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Zhiwen Shi
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China
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Zhang L, Kong X, Dong J, Ding F. A mechanism for thickness-controllable single crystalline 2D materials growth. Sci Bull (Beijing) 2023; 68:2936-2944. [PMID: 37951786 DOI: 10.1016/j.scib.2023.10.037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Revised: 10/02/2023] [Accepted: 10/27/2023] [Indexed: 11/14/2023]
Abstract
Recent efforts in growing two-dimensional (2D) multilayers have enabled the synthesis of single crystalline 2D multilayers in a wafer scale through the seamless stitching of multiple epitaxial 2D islands. Unlike previously observed wedding-cake or inverted-wedding-cake structures, these multilayer islands have the same size and shape in each layer with aligned edges. In this study, we investigated the underlying growth mechanisms of synchronic 2D multilayers growth and have showed that a heterogenous layer on a crystalline substrate is critical for maintaining the synchronic growth of 2D multilayers. During growth, the heterogenous layer passivates the edges of multilayer 2D island and thus prevents the coalescence of these active edges, while the high interfacial energy between the heterogenous surface layer and the substrate stabilizes the synchronic structure. Based on this model, we have successfully explained the previously observed synchronic growth of graphene and hexagonal boron nitride multilayers (Nat Nanotech 2020, 15: 861; Nature 2022, 606: 88). The deep understanding on the mechanism paves a way towards the synthesis of wafer-scale single-crystal 2D multilayers with a uniform thickness.
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Affiliation(s)
- Leining Zhang
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MOE Key Laboratory of Cluster Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xiao Kong
- State Key Laboratory of Information Functional Materials, 2020 X-Lab, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Feng Ding
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China.
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3
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Li S, Ouyang D, Zhang N, Zhang Y, Murthy A, Li Y, Liu S, Zhai T. Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211855. [PMID: 37095721 DOI: 10.1002/adma.202211855] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 04/17/2023] [Indexed: 05/03/2023]
Abstract
The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.
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Affiliation(s)
- Shaohua Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Na Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yi Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Akshay Murthy
- Superconducting Quantum Materials and Systems Division, Fermi National Accelerator Laboratory (FNAL), Batavia, IL, 60510, USA
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
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4
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Islam MS, Mazumder AAM, Sohag MU, Sarkar MMH, Stampfl C, Park J. Growth mechanisms of monolayer hexagonal boron nitride ( h-BN) on metal surfaces: theoretical perspectives. NANOSCALE ADVANCES 2023; 5:4041-4064. [PMID: 37560434 PMCID: PMC10408602 DOI: 10.1039/d3na00382e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 07/17/2023] [Indexed: 08/11/2023]
Abstract
Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.
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Affiliation(s)
- Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
| | | | - Minhaz Uddin Sohag
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Md Mosarof Hossain Sarkar
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Catherine Stampfl
- School of Physics, The University of Sydney New South Wales 2006 Australia
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
- School of Electrical Engineering and Computer Science, University of Ottawa Ottawa ON K1N 6N5 Canada
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5
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Tunable growth of one-dimensional graphitic materials: graphene nanoribbons, carbon nanotubes, and nanoribbon/nanotube junctions. Sci Rep 2023; 13:4328. [PMID: 36922649 PMCID: PMC10017793 DOI: 10.1038/s41598-023-31573-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/20/2022] [Accepted: 03/14/2023] [Indexed: 03/17/2023] Open
Abstract
Graphene nanoribbons (GNRs) and carbon nanotubes (CNTs), two representative one-dimensional (1D) graphitic materials, have attracted tremendous research interests due to their promising applications for future high-performance nanoelectronics. Although various methods have been developed for fabrication of GNRs or CNTs, a unified method allowing controllable synthesis of both of them, as well as their heterojunctions, which could largely benefit their nano-electronic applications, is still lacking. Here, we report on a generic growth of 1D carbon using nanoparticles catalyzed chemical vapor deposition (CVD) on atomically flat hexagonal boron nitride (h-BN) substrates. Relative ratio of the yielded GNRs and CNTs is able to be arbitrarily tuned by varying the growth temperature or feeding gas pressures. The tunability of the generic growth is quantitatively explained by a competing nucleation theory: nucleation into either GNRs or CNTs by the catalysts is determined by the free energy of their formation, which is controlled by the growth conditions. Under the guidance of the theory, we further realized growth of GNR/CNT intramolecular junctions through changing H2 partial pressure during a single growth process. Our study provides not only a universal and controllable method for growing 1D carbon nanostructures, but also a deep understanding of their growth mechanism, which would largely benefit future carbon-based electronics and optoelectronics.
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Dong J, Ding D, Jin C, Liu Y, Ding F. Edge Reconstruction-Dependent Growth Kinetics of MoS 2. ACS NANO 2023; 17:127-136. [PMID: 36534396 DOI: 10.1021/acsnano.2c05397] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Understanding the growth mechanisms of multielement two-dimensional (2D) crystals is challenging because of the unbalanced stoichiometry and possible reconstruction of their edges. Here, we present a systematic theoretical study on the chemical vapor deposition (CVD) growth mechanism of MoS2. We found that the growth kinetics of MoS2 highly depends on its edge reconstruction determined by concentrations of Mo and S in the growth environment. Based on the calculated energies of nucleation and propagation of various MoS2 edges, we predicted the transition of a MoS2 island growth from a regime of a triangle enclosed by Mo-terminated zigzag edges that are passivated by 50% S (Mo-II edges), to a regime of continuous evolution within a triangle, hexagon, and inverted triangle with 75%-S-terminated edges (S-III edges) and Mo-II edges, and finally to a regime of triangles with Mo-terminated zigzag edges that are passivated by 100% S (Mo-III edges) by tuning the growth condition from Mo-rich to S-rich, which provides a reasonable explanation to many experimental observations. This study provides a general guideline on theoretical studies of 2D crystals' growth mechanisms, deepens our understanding on the growth mechanism of multielement 2D crystals, and is beneficial for the controllable synthesis of various 2D crystals.
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Affiliation(s)
- Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan44919, Republic of Korea
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Degong Ding
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang310027, People's Republic of China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang310027, People's Republic of China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan44919, Republic of Korea
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7
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Lyu B, Chen J, Lou S, Li C, Qiu L, Ouyang W, Xie J, Mitchell I, Wu T, Deng A, Hu C, Zhou X, Shen P, Ma S, Wu Z, Watanabe K, Taniguchi T, Wang X, Liang Q, Jia J, Urbakh M, Hod O, Ding F, Wang S, Shi Z. Catalytic Growth of Ultralong Graphene Nanoribbons on Insulating Substrates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200956. [PMID: 35560711 DOI: 10.1002/adma.202200956] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2022] [Revised: 04/18/2022] [Indexed: 06/15/2023]
Abstract
Graphene nanoribbons (GNRs) with widths of a few nanometers are promising candidates for future nanoelectronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometer-long GNRs on insulating substrates, which is essential for the fabrication of nanoelectronic devices, remains an immense challenge. Here, the epitaxial growth of GNRs on an insulating hexagonal boron nitride (h-BN) substrate through nanoparticle-catalyzed chemical vapor deposition is reported. Ultranarrow GNRs with lengths of up to 10 µm are synthesized. Remarkably, the as-grown GNRs are crystallographically aligned with the h-BN substrate, forming 1D moiré superlattices. Scanning tunneling microscopy reveals an average width of 2 nm and a typical bandgap of ≈1 eV for similar GNRs grown on conducting graphite substrates. Fully atomistic computational simulations support the experimental results and reveal a competition between the formation of GNRs and carbon nanotubes during the nucleation stage, and van der Waals sliding of the GNRs on the h-BN substrate throughout the growth stage. This study provides a scalable, single-step method for growing micrometer-long narrow GNRs on insulating substrates, thus opening a route to explore the performance of high-quality GNR devices and the fundamental physics of 1D moiré superlattices.
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Affiliation(s)
- Bosai Lyu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Jiajun Chen
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Shuo Lou
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Can Li
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lu Qiu
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Wengen Ouyang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
| | - Jingxu Xie
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Izaac Mitchell
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Tongyao Wu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Aolin Deng
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Cheng Hu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xianliang Zhou
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Peiyue Shen
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Saiqun Ma
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhenghan Wu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Kenji Watanabe
- Research Centre for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Centre for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Xiaoqun Wang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Qi Liang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jinfeng Jia
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Michael Urbakh
- Department of Physical Chemistry, School of Chemistry and The Sackler Centre for Computational Molecular and Materials Science, The Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Oded Hod
- Department of Physical Chemistry, School of Chemistry and The Sackler Centre for Computational Molecular and Materials Science, The Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Shiyong Wang
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhiwen Shi
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, 200240, China
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Zhang Z, Yang X, Liu K, Wang R. Epitaxy of 2D Materials toward Single Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105201. [PMID: 35038381 PMCID: PMC8922126 DOI: 10.1002/advs.202105201] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 12/12/2021] [Indexed: 05/05/2023]
Abstract
Two-dimensional (2D) materials exhibit unique electronic, optical, magnetic, mechanical, and thermal properties due to their special crystal structure and thus have promising potential in many fields, such as in electronics and optoelectronics. To realize their real applications, especially in integrated devices, the growth of large-size single crystal is a prerequisite. Up to now, the most feasible way to achieve 2D single crystal growth is the epitaxy: growth of 2D materials of one or more specific orientations with single-crystal substrate. Only when the 2D domains have the same orientation, they can stitch together seamlessly and single-crystal 2D films can be obtained. In this view, four different epitaxy modes of 2D materials on various substrates are presented, including van der Waals epitaxy, edge epitaxy, step-guided epitaxy, and in-plane epitaxy focusing on the growth of graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenide (TMDC). The lattice symmetry relation and the interaction between 2D materials and the substrate are the key factors determining the epitaxy behaviors and thus are systematically discussed. Finally, the opportunities and challenges about the epitaxy of 2D single crystals in the future are summarized.
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Affiliation(s)
- Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Xiaonan Yang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronicsSchool of PhysicsPeking UniversityBeijing100871China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Rongming Wang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
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9
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Shen Y, Su S, Zhao W, Cheng S, Xu T, Yin K, Chen L, He L, Zhou Y, Bi H, Wan S, Zhang Q, Wang L, Ni Z, Banhart F, Botton GA, Ding F, Ruoff RS, Sun L. Sub-4 nm Nanodiamonds from Graphene-Oxide and Nitrated Polycyclic Aromatic Hydrocarbons at 423 K. ACS NANO 2021; 15:17392-17400. [PMID: 34128643 DOI: 10.1021/acsnano.1c00209] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Nanodiamonds are interesting materials from the point of view of their biocompatibility and their chemical, spectroscopic, and mechanical properties. Current synthetic methods for nanodiamonds involve harsh environments, which are potentially hazardous in addition to being expensive. We report a low-temperature (423 K) hydrothermal approach to form nanodiamonds by using graphene-oxide or nitrated polycyclic aromatic hydrocarbons (naphthalene, anthracene, phenanthrene, or pyrene) as a starting material. The reaction products contain single-crystalline or twinned nanodiamonds with average diameters in the 2-3 nm range. Theoretical calculations prove that, at the nanoscale, sub-4 nm nanodiamonds may adopt a structure that is more stable than graphene-oxide and nitrated polycyclic aromatic hydrocarbons. Our findings show that sp2 carbon in the polycyclic aromatic precursor can be converted to sp3 carbon under unexpectedly moderate temperature conditions by using nanoscale precursors and thus offer a low-temperature approach for the synthesis of sub-4 nm nanodiamonds.
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Affiliation(s)
- Yuting Shen
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
| | - Shi Su
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
- School of Aeronautic Engineering, Nanjing Vocational University of Industry Technology, Nanjing 210023, People's Republic of China
| | - Wen Zhao
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 689-798, Republic of Korea
| | - Shaobo Cheng
- Department of Materials Science and Engineering and Canadian Centre for Electron Microscopy, McMaster University, Hamilton, ON, Canada L8S 4M1
| | - Tao Xu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
| | - Kuibo Yin
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
| | - Linjiang Chen
- Department of Chemistry, University of Liverpool, Liverpool L69 7ZD, United Kingdom
| | - Longbing He
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
| | - Yilong Zhou
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
| | - Hengchang Bi
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
| | - Shu Wan
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
| | - Qiubo Zhang
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
| | - Liang Wang
- Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 200444, People's Republic of China
| | - Zhenhua Ni
- Department of Physics, Southeast University, 211189, Nanjing, China
| | - Florian Banhart
- Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 Université de Strasbourg - CNRS, 23 rue du Loess, 67034 Strasbourg, France
| | - Gianluigi A Botton
- Department of Materials Science and Engineering and Canadian Centre for Electron Microscopy, McMaster University, Hamilton, ON, Canada L8S 4M1
| | - Feng Ding
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 689-798, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea
| | - Rodney S Ruoff
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
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10
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Zhang Y, Zhao Y, Bai Y, Gao J, Zhao J, Zhang YW. Universal Zigzag Edge Reconstruction of an α-Phase Puckered Monolayer and Its Resulting Robust Spatial Charge Separation. NANO LETTERS 2021; 21:8095-8102. [PMID: 34505776 DOI: 10.1021/acs.nanolett.1c02461] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Edges are important, because they dictate the stability and properties of nanoribbons. Here, we reveal a universal reconstruction of the ZZ edge into a (2 × 1) tubed [ZZ(Tube)] edge, enabling an ultimate narrow nanotube to terminate nanoribbons for α-puckered group-V elemental and compound monolayers (GeS/Se and SnS/Se). The reconstructed edge formations are confirmed by CALYPSO. The ZZ(Tube) edge forms easily, is highly stable, and is semiconducting. Remarkably, the ZZ(Tube) edge always exhibits a type-II band structure and robust spatial charge separation. For a compound monolayer monochalcogenide, mild (2 × 1) ZZ(S-R) occurs at the chalcogenide-terminated edge. TDDFT simulations indicate that charge separation occurs only at 672 fs, while the lifetime is over 5 ns, thus facilitating robust spatial charge accumulation. These remarkable features of ZZ(Tube) edge-terminated α-puckered nanoribbons are ideal for optoelectronic and photocatalytic applications.
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Affiliation(s)
- Yanxue Zhang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Yanyan Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Yizhen Bai
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Junfeng Gao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Yong-Wei Zhang
- Institute of High Performance Computing, A*STAR, 138632 Singapore
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11
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Dong J, Zhang L, Wu B, Ding F, Liu Y. Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives. J Phys Chem Lett 2021; 12:7942-7963. [PMID: 34387496 DOI: 10.1021/acs.jpclett.1c02316] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.
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Affiliation(s)
- Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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12
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Zhang L, Dong J, Ding F. Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis. Chem Rev 2021; 121:6321-6372. [PMID: 34047544 DOI: 10.1021/acs.chemrev.0c01191] [Citation(s) in RCA: 53] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS2 have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.
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Affiliation(s)
- Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Jichen Dong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
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13
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Dong J, Zhang L, Dai X, Ding F. The epitaxy of 2D materials growth. Nat Commun 2020; 11:5862. [PMID: 33203853 PMCID: PMC7672100 DOI: 10.1038/s41467-020-19752-3] [Citation(s) in RCA: 66] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2020] [Accepted: 10/19/2020] [Indexed: 12/16/2022] Open
Abstract
Two dimensional (2D) materials consist of one to a few atomic layers, where the intra-layer atoms are chemically bonded and the atomic layers are weakly bonded. The high bonding anisotropicity in 2D materials make their growth on a substrate substantially different from the conventional thin film growth. Here, we proposed a general theoretical framework for the epitaxial growth of a 2D material on an arbitrary substrate. Our extensive density functional theory (DFT) calculations show that the propagating edge of a 2D material tends to align along a high symmetry direction of the substrate and, as a conclusion, the interplay between the symmetries of the 2D material and the substrate plays a critical role in the epitaxial growth of the 2D material. Based on our results, we have outlined that orientational uniformity of 2D material islands on a substrate can be realized only if the symmetry group of the substrate is a subgroup of that of the 2D material. Our predictions are in perfect agreement with most experimental observations on 2D materials' growth on various substrates known up to now. We believe that this general guideline will lead to the large-scale synthesis of wafer-scale single crystals of various 2D materials in the near future.
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Affiliation(s)
- Jichen Dong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Korea
| | - Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea
| | - Xinyue Dai
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Korea
- School of Materials Science and Engineering, Shandong University, 250061, Jinan, China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Korea.
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea.
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14
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Dong J, Zhang L, Ding F. Kinetics of Graphene and 2D Materials Growth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1801583. [PMID: 30318816 DOI: 10.1002/adma.201801583] [Citation(s) in RCA: 45] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2018] [Revised: 07/06/2018] [Indexed: 06/08/2023]
Abstract
During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.
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Affiliation(s)
- Jichen Dong
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Leining Zhang
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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15
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Gao J, Xu Z, Chen S, Bharathi MS, Zhang YW. Computational Understanding of the Growth of 2D Materials. ADVANCED THEORY AND SIMULATIONS 2018. [DOI: 10.1002/adts.201800085] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Affiliation(s)
- Junfeng Gao
- Institute of High Performance Computing; A*STAR Singapore 138632 Singapore
| | - Ziwei Xu
- School of Materials Science & Engineering; Jiangsu University; Zhenjiang 212013 China
| | - Shuai Chen
- Institute of High Performance Computing; A*STAR Singapore 138632 Singapore
| | | | - Yong-Wei Zhang
- Institute of High Performance Computing; A*STAR Singapore 138632 Singapore
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16
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McLean B, Eveleens CA, Mitchell I, Webber GB, Page AJ. Catalytic CVD synthesis of boron nitride and carbon nanomaterials - synergies between experiment and theory. Phys Chem Chem Phys 2018; 19:26466-26494. [PMID: 28849841 DOI: 10.1039/c7cp03835f] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Low-dimensional carbon and boron nitride nanomaterials - hexagonal boron nitride, graphene, boron nitride nanotubes and carbon nanotubes - remain at the forefront of advanced materials research. Catalytic chemical vapour deposition has become an invaluable technique for reliably and cost-effectively synthesising these materials. In this review, we will emphasise how a synergy between experimental and theoretical methods has enhanced the understanding and optimisation of this synthetic technique. This review examines recent advances in the application of CVD to synthesising boron nitride and carbon nanomaterials and highlights where, in many cases, molecular simulations and quantum chemistry have provided key insights complementary to experimental investigation. This synergy is particularly prominent in the field of carbon nanotube and graphene CVD synthesis, and we propose here it will be the key to future advances in optimisation of CVD synthesis of boron nitride nanomaterials, boron nitride - carbon composite materials, and other nanomaterials generally.
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Affiliation(s)
- Ben McLean
- School of Environmental & Life Sciences, The University of Newcastle, Callaghan NSW 2308, Australia.
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17
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Dong J, Wang H, Peng H, Liu Z, Zhang K, Ding F. Formation mechanism of overlapping grain boundaries in graphene chemical vapor deposition growth. Chem Sci 2016; 8:2209-2214. [PMID: 28507676 PMCID: PMC5408562 DOI: 10.1039/c6sc04535a] [Citation(s) in RCA: 29] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2016] [Accepted: 11/23/2016] [Indexed: 11/21/2022] Open
Abstract
The formation mechanisms of two different types of grain boundaries (GBs), the weakly bound overlapping GB and the covalent bound GB, during graphene domain coalescence are revealed by both theoretical modeling and experimental observations.
The formation of grain boundaries (GBs) in graphene films is both fundamentally interesting and practically important for many applications. A GB in graphene is known as a linear defect and is formed during the coalescence of two single crystalline graphene domains. The covalent binding between domains is broadly known as the mechanism of GB formation during graphene chemical vapor deposition (CVD) growth. Here, we demonstrate another GB formation mechanism, where two graphene domains are connected by weak van der Waals interactions between overlapping graphene layers. The formation mechanism of the overlapping GBs (OLGBs) is systematically explored theoretically and the proposed conditions for forming OLGBs are validated by experimental observations. This discovery leads to a deep understanding of the mechanism of graphene CVD growth and reveals potential means for graphene quality control in CVD synthesis.
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Affiliation(s)
- Jichen Dong
- Department of Mechanical and Biomedical Engineering , City University of Hong Kong , 83 Tat Chee Avenue , Kowloon , Hong Kong , China . .,Institute of Textiles and Clothing , Hong Kong Polytechnic University , Kowloon , Hong Kong , China .
| | - Huan Wang
- College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Hailin Peng
- College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Zhongfan Liu
- College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Kaili Zhang
- Department of Mechanical and Biomedical Engineering , City University of Hong Kong , 83 Tat Chee Avenue , Kowloon , Hong Kong , China .
| | - Feng Ding
- Institute of Textiles and Clothing , Hong Kong Polytechnic University , Kowloon , Hong Kong , China .
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18
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Wang ZJ, Dong J, Cui Y, Eres G, Timpe O, Fu Q, Ding F, Schloegl R, Willinger MG. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging. Nat Commun 2016; 7:13256. [PMID: 27759024 PMCID: PMC5075831 DOI: 10.1038/ncomms13256] [Citation(s) in RCA: 42] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2016] [Accepted: 09/13/2016] [Indexed: 11/11/2022] Open
Abstract
In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene-graphene and graphene-substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.
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Affiliation(s)
- Zhu-Jun Wang
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem D-14195, Germany
| | - Jichen Dong
- Institute of Textiles and Clothing, Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Yi Cui
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Gyula Eres
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Olaf Timpe
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem D-14195, Germany
| | - Qiang Fu
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Feng Ding
- Institute of Textiles and Clothing, Hong Kong Polytechnic University, Hong Kong 999077, China
| | - R. Schloegl
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem D-14195, Germany
| | - Marc-Georg Willinger
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem D-14195, Germany
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Dai J, Wang D, Zhang M, Niu T, Li A, Ye M, Qiao S, Ding G, Xie X, Wang Y, Chu PK, Yuan Q, Di Z, Wang X, Ding F, Yakobson BI. How Graphene Islands Are Unidirectionally Aligned on the Ge(110) Surface. NANO LETTERS 2016; 16:3160-3165. [PMID: 27101021 DOI: 10.1021/acs.nanolett.6b00486] [Citation(s) in RCA: 52] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The unidirectional alignment of graphene islands is essential to the synthesis of wafer-scale single-crystal graphene on Ge(110) surface, but the underlying mechanism is not well-understood. Here we report that the necessary coalignment of the nucleating graphene islands on Ge(110) surface is caused by the presence of step-pattern; we show that on the preannealed Ge(110) textureless surface the graphene islands appear nonpreferentially orientated, while on the Ge(110) surfaces with natural step pattern, all graphene islands emerge coaligned. First-principles calculations and theoretical analysis reveal this different alignment behaviors originate from the strong chemical binding formed between the graphene island edges and the atomic steps on the Ge(110) surface, and the lattice matching at edge-step interface dictates the alignment of graphene islands with the armchair direction of graphene along the [-110] direction of the Ge(110) substrate.
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Affiliation(s)
- Jiayun Dai
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China
| | - Danxia Wang
- Department of Physics, East China Normal University , Shanghai 200241, China
| | - Miao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China
| | - Tianchao Niu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China
| | - Ang Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China
| | - Mao Ye
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China
| | - Shan Qiao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China
| | - Guqiao Ding
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China
| | - Yongqiang Wang
- Materials Science and Technology Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States
| | - Paul K Chu
- Department of Physics and Materials Science, City University of Hong Kong , Kowloon, Hong Kong 999077, China
| | - Qinghong Yuan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China
- Department of Physics, East China Normal University , Shanghai 200241, China
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China
| | - Xi Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China
| | - Feng Ding
- Institute of Textiles and Clothing, Hong Kong Polytechnic University , Kowloon, Hong Kong 999077, China
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
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20
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Xu Z, Yan T, Liu G, Qiao G, Ding F. Large scale atomistic simulation of single-layer graphene growth on Ni(111) surface: molecular dynamics simulation based on a new generation of carbon-metal potential. NANOSCALE 2016; 8:921-929. [PMID: 26658834 DOI: 10.1039/c5nr06016h] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
To explore the mechanism of graphene chemical vapor deposition (CVD) growth on a catalyst surface, a molecular dynamics (MD) simulation of carbon atom self-assembly on a Ni(111) surface based on a well-designed empirical reactive bond order potential was performed. We simulated single layer graphene with recorded size (up to 300 atoms per super-cell) and reasonably good quality by MD trajectories up to 15 ns. Detailed processes of graphene CVD growth, such as carbon atom dissolution and precipitation, formation of carbon chains of various lengths, polygons and small graphene domains were observed during the initial process of the MD simulation. The atomistic processes of typical defect healing, such as the transformation from a pentagon into a hexagon and from a pentagon-heptagon pair (5|7) to two adjacent hexagons (6|6), were revealed as well. The study also showed that higher temperature and longer annealing time are essential to form high quality graphene layers, which is in agreement with experimental reports and previous theoretical results.
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Affiliation(s)
- Ziwei Xu
- School of Materials Science & Engineering, Jiangsu University, Zhenjiang 212013, Peoples Republic of China
| | - Tianying Yan
- Institute of New Energy Material Chemistry, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Nankai University, Tianjin 300071, Peoples Republic of China
| | - Guiwu Liu
- School of Materials Science & Engineering, Jiangsu University, Zhenjiang 212013, Peoples Republic of China
| | - Guanjun Qiao
- School of Materials Science & Engineering, Jiangsu University, Zhenjiang 212013, Peoples Republic of China
| | - Feng Ding
- Institute of Textiles and Clothing, Hong Kong Polytechnic University, Hung Hom, 999077, Hong Kong, China.
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21
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Zhao R, Gao J, Liu Z, Ding F. The reconstructed edges of the hexagonal BN. NANOSCALE 2015; 7:9723-9730. [PMID: 25959737 DOI: 10.1039/c5nr02143j] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
As an important two-dimensional material which shows exceptional mechanical and chemical stability, superior electronic properties, along with broad applications, the hexagonal-BN (h-BN) has drawn great attention recently. Here we report a systematic study on the structural stability, electronic and magnetic properties of various h-BN edges, including both bare and hydrogen-terminated ones. It is found that along the armchair (AC) direction, the pristine edge is the most stable one because of the formation of a triple B≡N bond, while, along the zigzag (ZZ) directions, the reconstructed ones, ZZB + N and ZZN57 are more stable. The pristine edges are more stable in bare BN in most cases if saturated with hydrogen. By applying the theory of Wulff construction, we predicted that an unpassivated BN domain prefers the hexagonal shape enclosed with bare AC edges i.e., AC-Ns, AC, AC-Bs if the feedstock varies from N-rich to B-rich. However, the evolution from ZZN edged triangular domain, to hexagonal domain enclosed with AC edges, and ZZB edged triangle may occur if the edges are terminated by hydrogen atoms. Further calculation shows that these edges present rich type-dependent properties and thus are important for various applications. This theoretical study showed that controlling the morphologies of BN domains and BN edges is crucial for various applications.
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Affiliation(s)
- Ruiqi Zhao
- School of Physics and Chemistry, Henan Polytechnic University, Henan 454003, China
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22
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Shu H, Tao XM, Ding F. What are the active carbon species during graphene chemical vapor deposition growth? NANOSCALE 2015; 7:1627-1634. [PMID: 25553809 DOI: 10.1039/c4nr05590j] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The dissociation of carbon feedstock is a crucial step for understanding the mechanism of graphene chemical vapor deposition (CVD) growth. Using first-principles calculations, we performed a comprehensive theoretical study for the population of various active carbon species, including carbon monomers and various radicals, CHi (i = 1, 2, 3, 4), on four representative transition-metal surfaces, Cu(111), Ni(111), Ir(111) and Rh(111), under different experimental conditions. On the Cu surface, which is less active, the population of CH and C monomers at the subsurface is found to be very high and thus they are the most important precursors for graphene CVD growth. On the Ni surface, which is more active than Cu, C monomers at the subsurface dominate graphene CVD growth under most experimental conditions. In contrast, on the active Ir and Rh surfaces, C monomers on the surfaces are found to be very stable and thus are the main precursors for graphene growth. This study shows that the mechanism of graphene CVD growth depends on the activity of catalyst surfaces and the detailed graphene growth process at the atomic level can be controlled by varying the temperature or partial pressure of hydrogen.
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Affiliation(s)
- Haibo Shu
- Institute of Textiles and Clothing, Hong Kong Polytechnic University, Hong Kong, China.
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