Flexible 1.3 μm photodetector fabricated with InN nanowires and graphene on overhead projector transparency sheet

We report the first demonstration of flexible photodetectors, operating at the wavelength window of 1.3 μm, fabricated with InN nanowires (NWs) and graphene on an overhead projector transparency (OHP) sheet. The InN NWs, used as an absorption medium for the device, were formed on a Si substrate and exhibited strong emission with a peak wavelength of 1.3 μm at room temperature. They were randomly and horizontally embedded in the graphene sandwich structure functioned as a carrier channel. The photocurrent and photoresponsivity of the flexible photodetector were found to be 1.17 mA and 0.48 A W^-1, respectively, at a voltage of 1 V and a light intensity of 60 mW cm^-2 of a xenon lamp. The photocurrent measured when the photodetector was bent under a strain of 3% was 1.15 mA, which corresponds to 98.3% compared to that before bending. Moreover, the photocurrent and photoresponsivity of the flexible photodetector measured after the 200 cyclic-bending tests are comparable to those measured before bending.

Synthesis and morphology evolution of indium nitride (InN) nanotubes and nanobelts by chemical vapor deposition

InN can form ternary alloys with Ga or Al, which increases the versatility of group-III nitride optoelectronic devices.

Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration

High quality InN nanoparticles are grown using an atmospheric chemical vapour deposition technique via a self-seeded catalytic approach in the temperature range of 580-650 °C. In this temperature region, the nucleation barrier of InN is overcome by seeding low density In nanoparticles prior to introduction of reactive NH3. Samples with increasing carrier densities are grown, with the help of increasing growth temperature, to understand the role of carrier density in the optical phonon structure. Near-resonance Raman spectra show completely different phonon pictures compared to those for the off-resonance spectra. A Raman forbidden mode of B1(high), because of the possible breakdown of selection rules in the near-resonance conditions, is invoked for the first time. The intensity and frequency of this mode strongly depend on the carrier concentration in the sample. In off-resonance conditions, the A1(LO) mode for the sample with higher carrier concentration is dominated by Fano interference rather than plasmon-phonon coupling. Variation of the intensity of the B1(high) mode is correlated with a band filling effect, which is substantiated by the luminescence studies of the InN samples with different carrier concentrations.

Sulfur-assisted synthesis of indium nitride nanoplates from indium oxide

Indium nitride (InN) is much more difficult to prepare than other group III nitrides for its low thermal stability.