Gd3+ Encapsulation on 2D-g-C3N4 Nanostructure for Spintronics and Ultrasound Assisted Photocatalytic Applications: First-Principles and Experimental Studies

Atomically thin two-dimensional (2D) semiconductors have high potential in optoelectronics and magneto-optics appliances due to their tunable band structures and physicochemical stability. The work demonstrates that Gd3+ incorporated 2D-g-C3N4 nanosheet (Gd3+/2D-g-C3N4 NS) is synthesized through chemisorption methodology for defect enrichment. The material characterizations reveal that the ion decoration enhances the surface area and defect concentration of the 2D sheet. The experimental observations have been further corroborated with the help of density functional theory (DFT) simulation. Spin asymmetry polarizations near the Fermi level, obtained through the partial density of states (PDOS) analyses, reveal the magnetic nature of the synthesized material, validating the room temperature ferromagnetism obtained through a vibrating-sample magnetometer (VSM). Gd3+/2D-g-C3N4 NS shows significant enhancement in saturation magnetization (Ms) experimentally and computationally compared to the pristine one. The magnetic catalyst shows 98% remediation efficiency for ultrasound-assisted visible-light-driven photodegradation of methyl orange (MO). The synergistic approach of liquid chromatography-mass spectrometry (LC-MS) analyses and DFT studies elucidates reaction intermediates and unveils the degradation mechanism. Post-characterization studies assure the stability of the magnetic catalyst through optical, chemical, magnetic, and microscopic analyses. So, the synthesized material can be proficiently used as a magnetic nanocatalyst in wastewater treatments and spin-electronics applications.

Ultrafast hydrogen production in boron/oxygen-codoped graphitic carbon nitride revealed by nonadiabatic dynamics simulations

Graphitic carbon nitride (g-C3N4 or GCN) shows promise in photocatalytic water splitting, despite facing the challenge of rapid electron-hole recombination. In this study, we investigated the influence of boron/oxygen codoping on the photocatalytic performance of GCN systems for hydrogen generation. First-principles calculations and nonadiabatic molecular dynamics (NAMD) simulations were employed to reveal that the recombination time of photogenerated carriers could be increased by 16% to 64% in the codoped systems compared to the pristine GCN. The time-dependent density functional theory (TDDFT) scheme was utilized to select energy windows and initiate dynamics in cluster models of B/O co-doped heptazine with water molecules. Notably, we observed efficient direct photodissociation of hydrogen atoms from water molecules within 60 fs and proton hops within the hydrogen-bonded network within 80 fs in the co-doped system, diverging from the previously proposed mechanism for pristine heptazine in NAMD simulations. This discovery underscores the significant role of faster proton-coupled electron transfer (PCET) reactions and rapid radiationless relaxation in achieving high photocatalytic efficiency in water splitting. Our work enhances the understanding of the internal mechanism of highly efficient photocatalysts for water splitting and provides a new design strategy for doped GCN.

A facile and green synthesis of Mn and P functionalized graphitic carbon nitride nanosheets for spintronics devices and enhanced photocatalytic performance under visible-light

Manganese and phosphorus co-doped, graphitic carbon nitride (g-C₃N₄) nanosheet (Mn/P-g-C₃N₄) is prepared by facile and green calcination process of melamine (C₃H₆N₆), manganese chloride tetrahydrate (MnCl₂·4H₂O), and ammonium dihydrogen phosphate ((NH₄)H₂PO₄). The Mn/P co-doping significantly enhances magnetic values compared to pristine-g-C₃N₄, phosphorus-doped g-C₃N₄ (P-g-C₃N₄), and manganese-doped g-C₃N₄ (Mn-g-C₃N₄). We find that Mn/P-g-C₃N₄ is a half-metallic ferromagnetic material having a magnetic moment and Curie temperature of 4.51 μ_B and ∼ 800 K, respectively. The ultraviolet-visible (UV-vis) absorption spectrum of Mn/P-g-C₃N₄ reveals superior absorption in broader wavelength compared to pristine-g-C₃N₄, P-g-C₃N₄, and Mn-g-C₃N₄. The methyl orange degradation efficiency of Mn/P-g-C₃N₄ photocatalyst is 94 %, which is three times more than that of pristine-g-C₃N₄ (29 %) and more significant than the P-g-C₃N₄ (46 %) and Mn-g-C₃N₄ (58 %). Furthermore, density functional theory (DFT) calculation explains the origin of high magnetic behavior, the boosted photocatalytic efficiency of Mn/P-g-C₃N₄, and the essential material properties like structure, bandgap, the density of states (DOS), and atomic level interaction. This work may be helpful for reasonably designing ferromagnetic material for spintronics devices and boosting visible-light (VL) photocatalytic performance for environmental remediation.

Structural, Electronic, and Magnetic Characteristics of Graphitic Carbon Nitride Nanoribbons and Their Applications in Spintronics

The development of quantum information and quantum computing technology requires special materials to design and manufacture nanosized spintronic devices. Possessing remarkable structural, electronic, and magnetic characteristics, graphitic carbon nitride (g-C₃N₄) can be a promising candidate as a building block of futuristic nanoelectronics and spintronic systems. Here, using first-principles calculations, we perform a comprehensive study on the structural stability as well as electronic and magnetic properties of triazine-based g-C₃N₄ nanoribbons (gt-CNRs). Our calculations show that gt-CNRs with different edge conformation exhibit distinct electronic and magnetic characteristics, which can be tuned by the edge H-passivation rate. By investigating gt-CNRs with various possible edge configurations and H-termination rates, we show that while the ferromagnetic (FM) ordering of gt-CNRs stays preserved for all of the studied configurations, half metallicity can only be achieved in nanoribbons with specific edge structure under full H-passivation rate. For spintronic application purposes, we also study spin-transport properties of half-metal gt-CNRs. By determining the suitable gt-CNR configuration, we show the possibility of developing a perfect gt-CNR-based spin filter with a spin filter efficiency (SFE) of 100%. Considering the above-mentioned notable electronic and magnetic characteristics as well as its high thermal stability, we show that gt-CNR would be a remarkable material to fabricate multifunctional spintronic devices.

Presence and absence of intrinsic magnetism in graphitic carbon nitrides designed through C-N-H building blocks

We use the first principle calculation to investigate the intrinsic magnetism of graphitic carbon nitrides (GCNs). By preserving three-fold symmetry, the GCN building blocks have been built out of different combinations between 6 components which are C atom, N atom, s-triazine, heptazine, heptazine with C atom at the center, and benzimidazole-like component. That results in 20 phases where 11 phases have been previously reported, and 9 phases are newly derived. The partial density of states and charge density have been analyzed through 20 phases to understand the origin of the presence and absence of intrinsic magnetism in GCNs. The intrinsic magnetism will be present not only because the GCNs comprising of radical components but also the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\pi$$\end{document}π-conjugated states are not the valence maximum to break the delocalization of unpaired electrons. The building blocks are also employed to study alloys between g-\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {C}_3\hbox {N}_4$$\end{document}C3N4 and g-\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {C}_4\hbox {N}_3$$\end{document}C4N3. The magnetization of the alloys has been found to be linearly dependent on a number of C atoms in the unit cell and some magnetic alloys are energetically favorable. Moreover, the intrinsic magnetism in GCNs can be promoted or demoted by passivating with a H atom depending on the passivated positions.

High carrier separation efficiency for a defective g-C3N4 with polarization effect and defect engineering: mechanism, properties and prospects

Different types of defects in g-C3N4 induce polarization effect to promote the separation of charge carriers and improve the photocatalytic efficiency.

Spin Polarization-Induced Facile Dioxygen Activation in Boron-Doped Graphitic Carbon Nitride

Dioxygen (O₂) activation is a vital step in many oxidation reactions, and a graphitic carbon nitride (g-C₃N₄) sheet is known as a famous semiconductor catalytic material. Here, we report that the atomic boron (B)-doped g-C₃N₄ (B/g-C₃N₄) can be used as a highly efficient catalyst for O₂ activation. Our first-principles results show that O₂ can be easily chemisorbed at the B site and thus can be highly activated, featured by an elongated O-O bond (∼1.52 Å). Interestingly, the O-O cleavage is almost barrier free at room temperatures, independent of the doping concentration. It is revealed that the B atom can induce considerable spin polarization on B/g-C₃N₄, which accounts for O₂ activation. The doping concentration determines the coupling configuration of net-spin and thus the magnitude of the magnetism. However, the distribution of net-spin at the active site is independent of the doping concentration, giving rise to the doping concentration-independent catalytic capacity. The unique monolayer geometry and the existing multiple active sites may facilitate the adsorption and activation of O₂ from two sides, and the newly generated surface oxygen-containing groups can catalyze the oxidation coupling of methane to ethane. The present findings pave a new way to design g-C₃N₄-based metal-free catalysts for oxidation reactions.

Metal-Free Half-Metallicity in B-Doped gh-C3N4 Systems

Half-metallicity rising from the s/p electrons has been one of the hot topics in spintronics. Based on the first-principles of calculation, we explore the magnetic properties of the B-doped graphitic heptazine carbon nitride (gh-C3N4) system. Ferromagnetism is observed in the B-doped gh-C3N4 system. Interestingly, its ground state phase (BC1@gh-C3N4) presents a strong half-metal property. Furthermore, the half-metallicity in BC1@gh-C3N4 can sustain up to 5% compressive strain and 1.5% tensile strain. It will lose its half-metallicity, however, when the doping concentration is below 6.25%. Our results show that such a metal-free half-metallic system has promising spintronic applications.

Atomically Thin B doped g-C3N4 Nanosheets: High-Temperature Ferromagnetism and calculated Half-Metallicity

Since the graphitic carbon nitride (g-C₄N₃), which can be seen as C-doped graphitic-C₃N₄ (g-C₃N₄), was reported to display ferromagnetic ground state and intrinsic half-metallicity (Du et al., PRL,108,197207,2012), it has attracted numerous research interest to tune the electronic structure and magnetic properties of g-C₃N₄ due to their potential applications in spintronic devices. In this paper, we reported the experimentally achieving of high temperature ferromagnetism in metal-free ultrathin g-C₃N₄ nanosheets by introducing of B atoms. Further, first-principles calculation results revealed that the current flow in such a system was fully spin-polarized and the magnetic moment was mainly attributed to the p orbital of N atoms in B doped g-C₃N₄ monolayer, giving the theoretic evidence of the ferromagnetism and half-metallicity. Our finding provided a new perspective for B doped g-C₃N₄ spintronic devices in future.

Transition-metal embedded carbon nitride monolayers: high-temperature ferromagnetism and half-metallicity

High-temperature ferromagnetic materials with planar surfaces are promising candidates for spintronics applications. Using state-of-the-art density functional theory (DFT) calculations, transition metal (TM = Cr, Mn, and Fe) incorporated graphitic carbon nitride (TM@gt-C3N4) systems are investigated as possible spintronics devices. Interestingly, ferromagnetism and half-metallicity were observed in all of the TM@gt-C3N4 systems. We find that Cr@gt-C3N4 is a nearly half-metallic ferromagnetic material with a Curie temperature of ∼450 K. The calculated Curie temperature is noticeably higher than other planar 2D materials studied to date. Furthermore, it has a steel-like mechanical stability and also possesses remarkable dynamic and thermal (500 K) stability. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N4 is as high as 137.26 μeV per Cr. Thereby, such material with a high Curie temperature can be operated at high temperatures for spintronics devices.

Sulfur antisite-induced intrinsic high-temperature ferromagnetism in Ag2S:Y nanocrystals

Sulfur antisite-induced intrinsic robust high-temperature ferromagnetism has been achieved in Ag₂S:Y nanocrystals.