1
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Liu YZ, Dai JQ, Yuan J, Zhao MW. The tunneling electroresistance effect in a van der Waals ferroelectric tunnel junction based on a graphene/In 2Se 3/MoS 2/graphene heterostructure. Phys Chem Chem Phys 2023. [PMID: 38047441 DOI: 10.1039/d3cp04408d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
In recent years, α-In2Se3 has attracted great attention in miniaturizing nonvolatile random memory devices because of its room temperature ferroelectricity and atomic thickness. In this work, we construct two-dimensional (2D) van der Waals (vdW) heterostructures α-In2Se3/MoS2 with different ferroelectric polarization and design a 2D graphene (Gr)/In2Se3/MoS2/Gr ferroelectric tunnel junction (FTJ) with the symmetric electrodes. Our calculations show that the band alignment of the heterostructures can be changed from type-I to type-II accompanied by the reversal of the ferroelectric polarization of In2Se3. Furthermore, the ferroelectricity persists in Gr/In2Se3/MoS2/Gr vdW FTJs, and the presence of dielectric layer MoS2 in the FTJs enables the effective modulation of the tunneling barrier by altering the ferroelectric polarization of α-In2Se3, which results in two distinct conducting states denoted as "ON" and "OFF" with a large tunneling electroresistance (TER) ratio exceeding 105%. These findings suggest the importance of ferroelectric vdW heterostructures in the design of FTJs and propose a promising route for applying the 2D ferroelectric/semiconductor heterostructures with out-of-plane polarization in high-density ferroelectric memory devices.
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Affiliation(s)
- Yu-Zhu Liu
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Jian-Qing Dai
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Jin Yuan
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Miao-Wei Zhao
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
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2
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Huang J, Zhang Q, Liu X, Wang Y, Yin H. Effect of vacancy defects on transport in all-phosphorene nanoribbon devices from first principles. Phys Chem Chem Phys 2023. [PMID: 37401346 DOI: 10.1039/d3cp01266b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/05/2023]
Abstract
Defects in experimentally manufactured phosphorene nanoribbons (PNRs) occur unavoidably, affecting the functionality of PNR-based devices. In this work, we theoretically propose and investigate an all-PNR devices with single-vacancy (SV) defects and double-vacancy (DV) defects along the zigzag direction, accounting for both hydrogen passivation and non-passivation scenarios. We discovered that, in the case of hydrogen passivation, the DV defect can introduce in-gap states, whereas the SV defect can result in p-type doping. The unpassivated hydrogen nanoribbon exhibits an edge state with a considerable influence on the transport properties, which also masks the effect of defects on transport; furthermore, it demonstrates the phenomenon of negative differential resistance, whose occurrence and characteristics depend less on the presence or absence of defects.
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Affiliation(s)
- Jingyuan Huang
- Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China.
| | - Qiang Zhang
- Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China.
| | - Xiaojie Liu
- Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China.
| | - Yin Wang
- Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, Shanghai, 200444, China.
| | - Haitao Yin
- Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China.
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3
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Zheng X, Chen M, Xie Y. Non-equilibrium spin-transport properties of Co/phosphorene/Co MTJ with non-collinear electrodes under mechanical bending. Phys Chem Chem Phys 2022; 24:24328-24334. [PMID: 36177914 DOI: 10.1039/d2cp02658a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Monolayer phosphorene has outstanding mechanical flexibility, making it rather attractive in flexible spintronics that are based on 2D materials. Here, we report a first-principles study on non-equilibrium electronic-transport properties of the Co/phosphorene/Co magnetic tunnel junction (MTJ) with two α-Co electrodes. The magnetic moments of the two electrodes are considered in the parallel configuration (PC) and the anti-parallel configuration (APC). The tunneling current through the MTJ is investigated at a small bias from 0 to 40 mV when mechanical bending is applied on the MTJ with different central angle (θ) values. For both the PC and APC, the tunneling current increases evidently and monotonously with increasing mechanical bending for 25° < θ < 40°, as compared to that without bending, which is mainly due to the reduced tunnel barrier. In the PC, the spin-injection efficiency (SIE) of the current is largely increased at a small bias from 0 to 40 mV for 25° ≤ θ ≤ 30° with a maximum of 90%, while the SIE is overall increased under all mechanical bending angles for the APC. The tunnel magnetoresistance is decreased with an increasing bias voltage, which can be largely enhanced for θ ≥ 25°, especially at small bias. Our results indicate that the Co/phosphorene/Co MTJ has promising applications in flexible low-power spintronic devices.
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Affiliation(s)
- Xiaolong Zheng
- Department of Physics, Shanghai Normal University, Shanghai 200234, China
| | - Mingyan Chen
- Hongzhiwei Technology (Shanghai) Co., Ltd., 1599 Xinjinqiao Road, Pudong, Shanghai, China.
| | - Yiqun Xie
- Department of Physics, Shanghai Normal University, Shanghai 200234, China
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4
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Devaraj N, Tarafder K. Spin‐Transport through Van der Waals Heterojunctions Based on 2D‐Ferromagnet and Transition Metal Dichalcogenides: A Study from First‐Principles Calculations. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202200178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Nayana Devaraj
- Department of Physics National Institute of Technology Karnataka Srinivasnagar, Surathkal Mangalore Karnataka 575025 India
| | - Kartick Tarafder
- Department of Physics National Institute of Technology Karnataka Srinivasnagar, Surathkal Mangalore Karnataka 575025 India
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5
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Chen Z, Li G, Wang H, Tang Q, Li Z. Substantial and stable magnetoresistance and spin conductance in phosphorene-based spintronic devices with Co electrodes. Phys Chem Chem Phys 2021; 23:10573-10579. [PMID: 33903865 DOI: 10.1039/d1cp00070e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Designing devices with excellent spin-polarized properties has been a challenge in physics and materials science. In this work, we report a theoretical investigation of the spin injection and spin-polarized transport properties of monolayer and bilayer phosphorene devices with Co electrodes. Based on the analysis of transmission coefficients, spin-polarized current, magnetoresistance (MR) (or tunnel MR) ratio and spin injection efficiency (SIE), both devices show superior spin-polarized transport properties. As phosphorene in the device is changed from monolayer to bilayer, the charge carrier type can be tuned from n-type to p-type. For the monolayer phosphorene device, the tunnel MR ratio reaches about 210% and the SIE is about 80.7% at zero bias. Notably, the SIE and tunnel MR ratio maintain almost constant values against bias voltage and gate voltage, which makes it suitable for magnetic sensors. As for the bilayer phosphorene device, it not only exhibits a considerable tunnel MR ratio, but also shows significantly enhanced conductance, beneficial to the sensitivity of spintronic devices. Further analysis shows that the improvement of conductance is attributed to the low barrier height between the bilayer phosphorene channel and Co electrodes. According to our results, the studied phosphorene devices with Co electrodes demonstrate superior spin injection and transport properties. We believe that these theoretical findings will be a strong asset for future experimental works in spintronics.
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Affiliation(s)
- Zhao Chen
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, China.
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6
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Devaraj N, Tarafder K. Spin transport through metal-dichalcogenides layers: a study from first-principles calculations. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:065505. [PMID: 33108777 DOI: 10.1088/1361-648x/abc4ee] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Spin transport through monolayer and trilayers of molybdenum dichalcogenides were studied considering Co as leads. Detailed investigations of the electronic structure of the Co/MoS2 interface and magnetic tri-junctions are carried out by using density functional theory calculations to understand transport behavior. The study revealed that new spin-polarized hybridized states appeared at the Fermi level due to the formation of Co/MoS2 interface that effectively acted as a spin filter and enhanced the spin injection efficiency of the systems. Spin-polarized current through the system as well as the magnetoresistance (MR) was estimated at different applied bias voltages. Large MR up to 78% was calculated for the trilayer MoS2 system at a relatively high applied bias voltage. The MR values are further improved by tuning the structure of the scattering region. A very large MR of 123% for MoS2/MoSe2/MoS2 trilayer at an applied bias 0.8 V was observed, which is much higher than the previously reported bias dependent MR values in similar systems.
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Affiliation(s)
- Nayana Devaraj
- Department of Physics, National Institute of Technology Karnataka, Srinivasnagar, Surathkal, Mangalore, Karnataka-575025, India
| | - Kartick Tarafder
- Department of Physics, National Institute of Technology Karnataka, Srinivasnagar, Surathkal, Mangalore, Karnataka-575025, India
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7
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Zhong K, Xu G, Yang Y, Zhang JM, Huang Z. One- and two-dimensional electrical contacts and transport properties in monolayer black phosphorene-Ni interface. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:145001. [PMID: 33445165 DOI: 10.1088/1361-648x/abdbe8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2020] [Accepted: 01/14/2021] [Indexed: 06/12/2023]
Abstract
Contacts between black phosphorene (BP) and metal electrodes are critical components of BP-based devices and can dramatically affect device performance. In this paper, we adopted first-principles calculations to explore binding energies, electronic structures, spatial potential distribution of monolayer BP-Ni interfaces in surface contact and edge contact types, and used density functional theoretical coupled with nonequilibrium Green's function method to investigate the electrical transport properties for transport systems of monolayer BP with Ni electrodes. Our calculated results indicate that contact type between monolayer BP and metal Ni electrodes may much affect the transport properties of monolayer BP-Ni devices. Interfacial interaction between Ni and monolayer BP in edge contact type is stronger than that in surface contact type. The potential distributions indicate that edge contact type is more beneficial for reducing contact resistance of monolayer BP-Ni contacts and conducive to improve the performance of BP-Ni electrode device.
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Affiliation(s)
- Kehua Zhong
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China
- Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen, 361005, People's Republic of China
| | - Guigui Xu
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China
- Concord University College, Fujian Normal University, Fuzhou 350117, People's Republic of China
| | - Yanmin Yang
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China
- Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen, 361005, People's Republic of China
| | - Jian-Min Zhang
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China
- Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen, 361005, People's Republic of China
| | - Zhigao Huang
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China
- Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen, 361005, People's Republic of China
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8
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Rong X, Yu Z, Wu Z, Li J, Wang B, Wang Y. First principles modeling of pure black phosphorus devices under pressure. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2019; 10:1943-1951. [PMID: 31598461 PMCID: PMC6774076 DOI: 10.3762/bjnano.10.190] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/19/2019] [Accepted: 09/08/2019] [Indexed: 06/10/2023]
Abstract
Black phosphorus (BP) has a pressure-dependent bandgap width and shows the potential for applications as a low-dimensional pressure sensor. We built two kinds of pure BP devices with zigzag or armchair conformation, and explored their pressure-dependent conductance in detail by using first principles calculations. The zigzag BP devices and the armchair BP devices exhibit different conductance-pressure relationships. For the zigzag BP devices conductance is robust against stress when the out-of-plane pressure ratio is less than 15%, and then increases rapidly until the conductive channels are fully opened. For the armchair pure BP devices conductance decreases at first by six orders of magnitude under increasing pressure and then increases quickly with further increase of pressure until the devices enter the on-state. This shows that the pure zigzag BP devices are more suitable for the application as flexible electronic devices with almost constant conductance under small pressure, while armchair BP devices can serve as bidirectional pressure sensors. Real-space distributions of band alignments were explored to understand the different pressure-related properties. We fitted a set of parameters based on the results from the empirical Wentzel-Kramers-Brillouin method, which provides an effortless approximation to quantitatively predict the pressure-related behaviors of large pure BP devices.
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Affiliation(s)
- Ximing Rong
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai 200444, China
| | - Zhizhou Yu
- Center for Quantum Transport and Thermal Energy Science, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China
| | - Zewen Wu
- Department of Physics and Shenzhen Institute of Research and Innovation, the University of Hong Kong, Pokfulam Road, Hong Kong SAR, China
| | - Junjun Li
- Hongzhiwei Technology (Shanghai) Co., Ltd. Shanghai 200000, China
| | - Bin Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- Center for Quantum Computing, Peng Cheng Laboratory, Shenzhen 518060, China
| | - Yin Wang
- Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai 200444, China
- Department of Physics and Shenzhen Institute of Research and Innovation, the University of Hong Kong, Pokfulam Road, Hong Kong SAR, China
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9
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pH-Sensitive Black Phosphorous–Incorporated Hydrogel as Novel Implant for Cancer Treatment. J Pharm Sci 2019; 108:2542-2551. [DOI: 10.1016/j.xphs.2019.03.003] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2018] [Revised: 02/15/2019] [Accepted: 03/05/2019] [Indexed: 01/05/2023]
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10
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Saboori S, Deng Z, Li Z, Wang W, She J. β-As Monolayer: Vibrational Properties and Raman Spectra. ACS OMEGA 2019; 4:10171-10175. [PMID: 31460109 PMCID: PMC6648099 DOI: 10.1021/acsomega.9b00712] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/14/2019] [Accepted: 05/29/2019] [Indexed: 11/28/2022]
Abstract
Recently, semiconducting and other extraordinary properties of the monolayer of the V-group element have attracted a broad interest and attention. The success of experimentally growing antimonene and black phosphorus makes the arsenic monolayer a reasonable candidate for two-dimensional semiconductors. By using DFT calculation, we investigate the vibrational properties and Raman spectra of the buckled honeycomb monolayer of arsenic (β-As) for four commonly used laser lines. By calculating Raman tensor of each active modes of the β-As monolayer, we obtained polarization angle-dependent Raman intensities when the wave vector of incident light is parallel and perpendicular with the plane of the β-As monolayer. We found that the nonresonant Raman spectra have two peaks at 235 and 305 cm-1 that correspond to the in-plane vibrating mode Eg and out-of-plane vibrating mode A1g, which is similar to germanene, blue phosphorene, and β-Sb monolayer Raman spectra. There are two (four) minima and two (four) maxima when the polarization direction of scattered light is parallel (perpendicular) to that of the incident light and the wave vector of the incident light is parallel to the β-As monolayer. The Raman intensities of neither parallel polarization configuration nor perpendicular polarization configuration depend on the polarization direction when the wave vector of incident light is perpendicular to the β-As monolayer. The relation between shapes of the polar plots and relative values of Raman tensor elements is found. The Raman intensities decrease with increasing wavelength of incident laser lines in most cases. Our results will help experimentalists to identify the existence and the orientation of the β-As monolayer while they are growing the β-As monolayer.
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11
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Luo Y, Xie Y, Ye X, Wang Y. A self-powered phosphorene photodetector with excellent spin-filtering and spin-valve effects. Phys Chem Chem Phys 2019; 21:7613-7617. [PMID: 30906937 DOI: 10.1039/c9cp00943d] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Spin-filtering and spin-valve effects are fundamental issues of spintronics in two-dimensional materials, where a self-powered nanotechnology is also highly desired for low-power consumption. Herein, we report a self-powered nickel-phosphorene-nickel photodetector driven by photogalvanic effects (PGEs), based on quantum transport simulations. Persistent photocurrent is generated at zero bias due to PGEs induced by vertical illumination with linearly and elliptically polarized light. Moreover, fully spin-polarized photocurrent and large magnetoresistance can be obtained by tunneling the photon energy and light polarization, which indicates both excellent spin-filtering and spin-valve effects. These results suggest a promising application of PGE-driven phosphorene photodetectors in low energy-consumption spintronic devices.
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Affiliation(s)
- Yongzhi Luo
- Department of Physics, Shanghai Normal University, 100 Guilin Road, Shanghai 200232, P. R. China.
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12
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Balcı E, Akkuş ÜÖ, Berber S. High TMR in MXene-Based Mn 2CF 2/Ti 2CO 2/Mn 2CF 2 Magnetic Tunneling Junction. ACS APPLIED MATERIALS & INTERFACES 2019; 11:3609-3616. [PMID: 30586990 DOI: 10.1021/acsami.8b20202] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We suggest an MXene-based magnetic tunnel junction (MTJ) design. The device characteristics of the MTJ were investigated by nonequilibrium Green's function formalism within the density functional theory. Inspired by the first synthesized magnetic MAX crystal of Mn2GaC, its two-dimensional (2D) counterpart of the half-metallic Mn2CF2 MXene layer was selected as the magnetic electrode. The tunneling barrier was chosen as Ti2CO2 MXene, which is one of the most studied MXenes in experimental and theoretical works. It is beneficial that both the electrodes and the tunneling barrier are 2D materials from the same material family and have similar structures. The common device problem of lattice mismatch does not occur in our MTJ design because the lattice parameters are compatible. In addition, the band gap of Ti2CO2 tunneling barrier is almost the same as the half-metallic gap of Mn2CF2 electrodes. Both the barrier and the electrodes have a common C layer that contributes the most to the transmission. Our MTJ design consists of structurally and electronically well-matched components. We find that the tunneling magnetoresistance ratio has a peak value of ≈106 and stays higher than ≈103 under the bias voltages up to 1 V. Since the applied bias voltages are within the energy gap of the tunneling barrier, the half-metallic character of the conduction is preserved up to 1 V. The tunneling-based transmission was observed in all of the three devices with varying tunneling barrier widths, and the current decreases with increasing width. The MXene-based MTJ has promising device characteristics.
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Affiliation(s)
- Erdem Balcı
- Department of Physics , Gebze Technical University , Gebze , Kocaeli 41400 , Turkey
| | - Ünal Özden Akkuş
- Department of Physics , Gebze Technical University , Gebze , Kocaeli 41400 , Turkey
| | - Savas Berber
- Department of Physics , Gebze Technical University , Gebze , Kocaeli 41400 , Turkey
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13
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Li J, Ruan L, Wu Z, Zhang G, Wang Y. All-phosphorus flexible devices with non-collinear electrodes: a first principles study. Phys Chem Chem Phys 2018. [PMID: 29513307 DOI: 10.1039/c7cp08462e] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
With the continuous expansion of the family of two-dimensional (2D) materials, flexible electronics based on 2D materials have quickly emerged. Theoretically, predicting the transport properties of the flexible devices made up of 2D materials using first principles is of great importance. Using density functional theory combined with the non-equilibrium Green's function formalism, we calculated the transport properties of all-phosphorus flexible devices with non-collinear electrodes, and the results predicted that the device with compressed metallic phosphorene electrodes sandwiching a P-type semiconducting phosphorene shows a better and robust conducting behavior against the bending of the semiconducting region when the angle between the two electrodes is less than 45°, which indicates that this system is very promising for flexible electronics. The calculation of a quantum transport system with non-collinear electrodes demonstrated in this work will provide more interesting information on mesoscopic material systems and related devices.
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Affiliation(s)
- Junjun Li
- College of Chemical and Environmental Engineering, Harbin University of Science and Technology, Harbin 150080, China.
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14
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Zhao P, Li J, Jin H, Yu L, Huang B, Ying D. Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides. Phys Chem Chem Phys 2018; 20:10286-10291. [DOI: 10.1039/c8cp00557e] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
A robust spin-filtering device based on two-dimensional TMDs.
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Affiliation(s)
- Pei Zhao
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
| | - Jianwei Li
- College of Physics and Energy
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- Shenzhen University
- Shenzhen 518060
- People's Republic of China
| | - Hao Jin
- College of Physics and Energy
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- Shenzhen University
- Shenzhen 518060
- People's Republic of China
| | - Lin Yu
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
| | - Dai Ying
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
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15
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Zhang S, Xie Y, Hu Y, Niu X, Wang Y. Remarkable negative differential resistance and perfect spin-filtering effects of the indium triphosphide (InP3) monolayer tuned by electric and optical ways. Phys Chem Chem Phys 2018; 20:29440-29445. [DOI: 10.1039/c8cp05595e] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2023]
Abstract
Fully spin-polarized current and negative differential resistance (NDR) are two important electronic transport properties for spintronic nanodevices based on two-dimensional materials.
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Affiliation(s)
- Shenghui Zhang
- School of Materials and Energy
- University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
- Department of Physics
| | - Yiqun Xie
- Department of Physics
- Shanghai Normal University
- Shanghai 200232
- P. R. China
| | - Yibin Hu
- State Key Laboratory of Infrared Physics
- Shanghai Institute of Technical Physics
- Chinese Academy of Sciences
- Shanghai 200083
- P. R. China
| | - Xiaobin Niu
- School of Materials and Energy
- University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
| | - Yin Wang
- Department of Physics and International Centre for Quantum and Molecular Structures
- Shanghai University
- Shanghai 200444
- China
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16
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Gao G, Li Z, Chen M, Xie Y, Wang Y. Effect of molybdenum disulfide nanoribbon on quantum transport of graphene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:435001. [PMID: 28829340 DOI: 10.1088/1361-648x/aa879f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Based on the density functional theory method in combination with the nonequilibrium green's function formalism, the quantum transport properties in graphene-[Formula: see text] vertical heterojunction were investigated in this work. The leads are boron doped graphene and seamlessly connect to the graphene nanoribbon in central scattering region. Although there is a weak graphene-[Formula: see text] interaction, molybdenum disulfide can smooth the electrostatic potential and enlarge the transport properties of the whole device. However, another competitive factor is that of the edge states of the [Formula: see text] nanoribbon. When the transport is along the zigzag direction of graphene, the armchair [Formula: see text] nanoribbon simply enlarges the transmission coefficient. Nevertheless, in the armchair transport system, there is an asymmetric electrostatic potential induced by the different atomic potentials of S and Mo atoms at both edges in the zigzag [Formula: see text] nanoribbon, whose potential can lead to obvious scattering from graphene to [Formula: see text] and suppress the transmission probability. Therefore, it also suppresses the influence of zigzag [Formula: see text] nanoribbon on the transmission coefficient. Our first principles simulations provide useful predictions for the application of graphene based emerging electronics, which may stimulate further experimental exploration.
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Affiliation(s)
- Guanyi Gao
- College of Science, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
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17
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Feng YP, Shen L, Yang M, Wang A, Zeng M, Wu Q, Chintalapati S, Chang CR. Prospects of spintronics based on 2D materials. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2017. [DOI: 10.1002/wcms.1313] [Citation(s) in RCA: 101] [Impact Index Per Article: 14.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Affiliation(s)
- Yuan Ping Feng
- Department of Physics; National University of Singapore; Singapore
- Centre for Advanced Two-dimensional Materials; National University of Singapore; Singapore
| | - Lei Shen
- Department of Mechanical Engineering; National University of Singapore; Singapore
- Engineering Science Programme; National University of Singapore; Singapore
| | - Ming Yang
- Institute of Materials Science and Engineering; A*STAR; Singapore
| | - Aizhu Wang
- Department of Physics; National University of Singapore; Singapore
- Department of Electrical and Computer Engineering; National University of Singapore; Singapore
| | | | - Qingyun Wu
- Department of Materials Science and Engineering; National University of Singapore; Singapore
| | - Sandhya Chintalapati
- Centre for Advanced Two-dimensional Materials; National University of Singapore; Singapore
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Yin H, Chen J, Wang Y, Wang J, Guo H. Composition dependent band offsets of ZnO and its ternary alloys. Sci Rep 2017; 7:41567. [PMID: 28134298 PMCID: PMC5278510 DOI: 10.1038/srep41567] [Citation(s) in RCA: 38] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2016] [Accepted: 12/20/2016] [Indexed: 11/09/2022] Open
Abstract
We report the calculated fundamental band gaps of wurtzite ternary alloys Zn1-xMxO (M = Mg, Cd) and the band offsets of the ZnO/Zn1-xMxO heterojunctions, these II-VI materials are important for electronics and optoelectronics. Our calculation is based on density functional theory within the linear muffin-tin orbital (LMTO) approach where the modified Becke-Johnson (MBJ) semi-local exchange is used to accurately produce the band gaps, and the coherent potential approximation (CPA) is applied to deal with configurational average for the ternary alloys. The combined LMTO-MBJ-CPA approach allows one to simultaneously determine both the conduction band and valence band offsets of the heterojunctions. The calculated band gap data of the ZnO alloys scale as Eg = 3.35 + 2.33x and Eg = 3.36 - 2.33x + 1.77x2 for Zn1-xMgxO and Zn1-xCdxO, respectively, where x being the impurity concentration. These scaling as well as the composition dependent band offsets are quantitatively compared to the available experimental data. The capability of predicting the band parameters and band alignments of ZnO and its ternary alloys with the LMTO-CPA-MBJ approach indicate the promising application of this method in the design of emerging electronics and optoelectronics.
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Affiliation(s)
- Haitao Yin
- Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China.,Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, China
| | - Junli Chen
- Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Yin Wang
- Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, China.,The University of Hong Kong Shenzhen Institute of Research and Innovation, Shenzhen, Guangdong 518057, China
| | - Jian Wang
- Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, China.,The University of Hong Kong Shenzhen Institute of Research and Innovation, Shenzhen, Guangdong 518057, China
| | - Hong Guo
- Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, China.,Center for the Physics of Materials and Department of Physics, McGill University, Montreal, Quebec H3A 2T8, Canada
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