Electronic and transport properties of the (VBz)n@MoS2NT nanocable

Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire

A series of four-terminal V7(Bz)8-WGNR devices were established with wrinkled graphene nanoribbon (WGNR) and vanadium-benzene nanowire (V7(Bz)8). The spin-polarized V7(Bz)8 as the gate channel was placed crossing the plane, the concave (endo-positioned) and the convex (endo-positioned) surface of WGNR with different curvatures via Van der Waals interaction. The density functional theory (DFT) and nonequilibrium Green's function (NEGF) methods were adopted to calculate the transport properties of these devices at various bias voltages (VS) and gate voltages (VG), such as the conductance, spin-polarized currents, transmission spectra (TS), local density of states (LDOS), and scattering states. The results indicate that the position of V7(Bz)8 and the bending curvature of WGNR play important roles in tuning the transport properties of these four-terminal devices. A spin-polarized transport property is induced for these four-terminal devices by the spin-polarized nature of V7(Bz)8. Particularly, the down-spin channel disturbs strongly on the source-to-drain conductance of WGNR when V7(Bz)8 is endo-positioned crossing the WGNR. Our findings on the novel property of four-terminal V7(Bz)8-WGNR devices provide useful guidelines for achieving flexible graphene-based electronic nanodevices by attaching other similar multidecker metal-arene nanowires.

Transport properties of MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions tuned by bias and gate voltages

The MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions are designed and the transport properties of their four-terminal devices are comparatively investigated based on density functional theory (DFT) and the nonequilibrium Green's function (NEGF) technique. The MoS2 and graphene nanoribbons act as the source-to-drain channel and the spin-polarized one-dimensional (1D) benzene-V multidecker complex nanowire (V7(Bz)8) serves as the gate channel. Gate voltages applied on V7(Bz)8 exert different influences of electron transport on MoS2/V7(Bz)8 and graphene/V7(Bz)8. In MoS2/V7(Bz)8, the interplay of source and gate bias potentials could induce promising properties such as negative differential resistance (NDR) behavior, output/input current switching, and spin-polarized currents. In contrast, the gate bias plays an insignificant effect on the transport along graphene in graphene/V7(Bz)8. This dissimilarity is attributed to the fact that the conductivity follows the sequence of MoS2 < V7(Bz)8 < graphene. These transport characteristics are examined by analyzing the conductivity, the currents, the local density of states (LDOS), and the transmission spectra. These results are valuable in designing multi-terminal nanoelectronic devices.

Instantaneous and Phosphine-Catalyzed Arene Binding and Reduction by U(III) Complexes

Neutral arenes such as benzene have never been considered suitable ligands for electropositive actinide cations, yet we find that even simple U^III UX₃ aryloxide complexes such as U(ODipp)₃ bind and reduce arenes spontaneously at room temperature, forming inverse arene sandwich (IAS) complexes X_nU(μ-C₆D₆)UX_m (X = ODipp, n=2, m=3; X = OBMes₂ n=m=2 or 3) (ODipp = OC₆H₃ⁱPr₂-2,6; Mes = 2,4,6-Me₃-C₆H₂). In some of these cases, further arene reduction has occured as a result of X ligand redistribution. These unexpected spontaneous reactions explain the anomalous spectra and reported lack of further reactivity of strongly reducing U^III centers of U(ODipp)₃. Phosphines that are not considered suitable ligands for actinides can catalyze the formation of the IAS complexes. This enables otherwise inaccessible asymmetric and less congested IAS complexes to be isolated and the bonding in this series compared.

Four probe electron transport characteristics of porphyrin phenylacetylene molecular devices

A novel functional nano-electronic molecular system by tuning gate voltages and source voltages as well as changing lead-to-lead channels.

Electronic and transport properties of [V(Bz)2]n@SWCNT and [V(Bz)2]n@DWCNT nanocables

Novel nanocables with [V(Bz)₂]_n inside SWCNT and DWCNT.