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Li B, Zhang S, Xu L, Su Q, Du B. Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory. Polymers (Basel) 2023; 15:4374. [PMID: 38006098 PMCID: PMC10675020 DOI: 10.3390/polym15224374] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 11/07/2023] [Accepted: 11/07/2023] [Indexed: 11/26/2023] Open
Abstract
Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology.
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Affiliation(s)
- Bixin Li
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi’an 710072, China
- School of Physics, Central South University, 932 South Lushan Road, Changsha 410083, China
| | - Shiyang Zhang
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Lan Xu
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Qiong Su
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Bin Du
- School of Materials Science and Engineering, Xi’an Polytechnic University, Xi’an 710048, China
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2
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Thien GSH, Chan KY, Marlinda AR. The Role of Polymers in Halide Perovskite Resistive Switching Devices. Polymers (Basel) 2023; 15:polym15051067. [PMID: 36904308 PMCID: PMC10007671 DOI: 10.3390/polym15051067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2023] [Revised: 02/02/2023] [Accepted: 02/10/2023] [Indexed: 02/24/2023] Open
Abstract
Currently, halide perovskites (HPs) are gaining traction in multiple applications, such as photovoltaics and resistive switching (RS) devices. In RS devices, the high electrical conductivity, tunable bandgap, good stability, and low-cost synthesis and processing make HPs promising as active layers. Additionally, the use of polymers in improving the RS properties of lead (Pb) and Pb-free HP devices was described in several recent reports. Thus, this review explored the in-depth role of polymers in optimizing HP RS devices. In this review, the effect of polymers on the ON/OFF ratio, retention, and endurance properties was successfully investigated. The polymers were discovered to be commonly utilized as passivation layers, charge transfer enhancement, and composite materials. Hence, further HP RS improvement integrated with polymers revealed promising approaches to delivering efficient memory devices. Based on the review, detailed insights into the significance of polymers in producing high-performance RS device technology were effectively understood.
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Affiliation(s)
- Gregory Soon How Thien
- Centre for Advanced Devices and Systems, Faculty of Engineering, Multimedia University, Persiaran Multimedia, Cyberjaya 63100, Selangor, Malaysia
| | - Kah-Yoong Chan
- Centre for Advanced Devices and Systems, Faculty of Engineering, Multimedia University, Persiaran Multimedia, Cyberjaya 63100, Selangor, Malaysia
- Correspondence:
| | - Ab Rahman Marlinda
- Nanotechnology and Catalysis Research Centre (NANOCAT), Universiti Malaya, Kuala Lumpur 50603, Malaysia
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3
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Li D, Dong X, Cheng P, Song L, Wu Z, Chen Y, Huang W. Metal Halide Perovskite/Electrode Contacts in Charge-Transporting-Layer-Free Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203683. [PMID: 36319474 PMCID: PMC9798992 DOI: 10.1002/advs.202203683] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 09/13/2022] [Indexed: 06/16/2023]
Abstract
Metal halide perovskites have drawn substantial interest in optoelectronic devices in the past decade. Perovskite/electrode contacts are crucial for constructing high-performance charge-transporting-layer-free perovskite devices, such as solar cells, field-effect transistors, artificial synapses, memories, etc. Many studies have evidenced that the perovskite layer can directly contact the electrodes, showing abundant physicochemical, electronic, and photoelectric properties in charge-transporting-layer-free perovskite devices. Meanwhile, for perovskite/metal contacts, some critical interfacial physical and chemical processes are reported, including band bending, interface dipoles, metal halogenation, and perovskite decomposition induced by metal electrodes. Thus, a systematic summary of the role of metal halide perovskite/electrode contacts on device performance is essential. This review summarizes and discusses charge carrier dynamics, electronic band engineering, electrode corrosion, electrochemical metallization and dissolution, perovskite decomposition, and interface engineering in perovskite/electrode contacts-based electronic devices for a comprehensive understanding of the contacts. The physicochemical, electronic, and morphological properties of various perovskite/electrode contacts, as well as relevant engineering techniques, are presented. Finally, the current challenges are analyzed, and appropriate recommendations are put forward. It can be expected that further research will lead to significant breakthroughs in their application and promote reforms and innovations in future solid-state physics and materials science.
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Affiliation(s)
- Deli Li
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
- Fujian cross Strait Institute of Flexible Electronics (Future Technologies)Fujian Normal UniversityFuzhou350117P. R. China
| | - Xue Dong
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Peng Cheng
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Lin Song
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Zhongbin Wu
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM)Nanjing Tech University30 South Puzhu RoadNanjingJiangsu211816P. R. China
| | - Wei Huang
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM)Nanjing Tech University30 South Puzhu RoadNanjingJiangsu211816P. R. China
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced MaterialsNanjing University of Posts and TelecommunicationsNanjing210023P. R. China
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Shen J, Guan P, Jiang A, Fan W, Li S, Liu Y, Xu S, Cao S. A Polyanionic Strategy to Modify the Perovskite Grain Boundary for a Larger Switching Ratio in Flexible Woven Resistive Random-Access Memories. ACS APPLIED MATERIALS & INTERFACES 2022; 14:44652-44664. [PMID: 36125291 DOI: 10.1021/acsami.2c10562] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The intergranular interface modification of organic-inorganic hybrid perovskites (OHP) is an important issue to regulate the flexibility, stability, and resistive switching (RS) performance of resistive random-access memories (RRAMs). A novel strategy of polymer additives for OHP intergranular interface modification is explored in this work with the polyanionic backbone to improve the distribution of cage-shaped cavity molecules at the perovskite grain boundaries. Specifically speaking, poly(1-adamantylammonium acrylate) (PADAm) is first synthesized through the acid-base reaction of polyacrylic acid with 1-adamantylamine to simultaneously realize the introduction of a cage-shaped cavity molecule and the polyanionic backbone. Herein, organic ammonium cations 1-adamantylammonium (ADNH3+) in PADAm are applied as the cage-shaped cavity molecules to tune the dielectric property by being anchored at the perovskite grain boundaries. Meanwhile, polyacrylic anions in PADAm play the role of the polyanionic backbone to produce the more uniform distribution of ADNH3+. Simultaneously, the flexibility and stability of OHP RRAM devices are also improved due to the introduction of the polyanionic backbone. Consequently, the 4% ADNH3I-modified planar device exhibits the stable nonvolatile RS behavior with an on/off ratio of ∼104, even with one-month exposure under an ambient environment. Importantly, the introduction of PADAm in the flexible fibrous crosspoint of functional fiber Al@MAPbI3:PADAm and bare Al fiber further increases the on/off ratio to 108 due to the effectively improved distribution of hollow cage-shaped ADNH3+ at the perovskite intergranular interfaces together with the application of the fibrous crosspoint device configuration. Especially, these excellent crosspoint RRAM devices can be integrated into the woven fibrous RRAM array in the thermal plastic packaging configuration. In addition, the excellent multilevel RS behavior can also be realized in the woven fibrous RRAM array, indicating potential high-density data storage. This work provides a novel strategy of polymer additives bearing the polyanionic backbone to improve the flexibility, stability, and RS performance of perovskite RRAM devices.
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Affiliation(s)
- Junqing Shen
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Ping Guan
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Aiyun Jiang
- Huanghe Science and Technology College, Zhengzhou, Henan 450063, People's Republic of China
| | - Wentao Fan
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shengnan Li
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Yingliang Liu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shengang Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shaokui Cao
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Huanghe Science and Technology College, Zhengzhou, Henan 450063, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
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5
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Ercan E, Liu CL, Chen WC. Nano-Micro Dimensional Structures of Fiber-Shaped Luminous Halide Perovskite Composites for Photonic and Optoelectronic Applications. Macromol Rapid Commun 2020; 41:e2000157. [PMID: 32608544 DOI: 10.1002/marc.202000157] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2020] [Revised: 05/19/2020] [Indexed: 12/27/2022]
Abstract
Perovskite nanomaterials have been revealed as highly luminescent structures regarding their dimensional confinement. In particular, their promising potential lies behind remarkable luminescent properties, including color tunability, high photoluminescence quantum yield, and the narrow emission band of halide perovskite (HP) nanostructures for optoelectronic and photonic applications such as lightning and displaying operations. However, HP nanomaterials possess such drawbacks, including oxygen, moisture, temperature, or UV lights, which limit their practical applications. Recently, HP-containing polymer composite fibers have gained much attention owing to the spatial distribution and alignment of HPs with high mechanical strength and ambient stability in addition to their remarkable optical properties comparable to that of nanocrystals. In this review, the fabrication methods for preparing nano-microdimensional HP composite fiber structures are described. Various advantages of the luminescent composite nanofibers are also described, followed by their applications for photonic and optoelectronic devices including sensors, polarizers, waveguides, lasers, light-down converters, light-emitting diode operations, etc. Finally, future directions and remaining challenges of HP-based nanofibers are presented.
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Affiliation(s)
- Ender Ercan
- Department of Chemical Engineering and Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Cheng-Liang Liu
- Department of Chemical and Materials Engineering and Research Center of New Generation Light Driven Photovoltaic Modules, National Central University, Taoyuan, 32001, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering and Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
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6
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Cao X, Han Y, Zhou J, Zuo W, Gao X, Han L, Pang X, Zhang L, Liu Y, Cao S. Enhanced Switching Ratio and Long-Term Stability of Flexible RRAM by Anchoring Polyvinylammonium on Perovskite Grains. ACS APPLIED MATERIALS & INTERFACES 2019; 11:35914-35923. [PMID: 31495172 DOI: 10.1021/acsami.9b12931] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The ON/OFF ratio and long-term stability are two important issues for flexible organic-inorganic hybrid perovskite (OHP) resistive random access memory (RRAM) for practical applications. In this work, polyvinylammonium (PVAm) is applied to partially replace methylamine ions (MA+) to fabricate the stable and flexible polymeric OHP RRAM devices, wherein PVAm acts as nucleation sites and the template for crystalline growth of MAPbI3 to tune the microscopic perovskite structure. Simultaneously, the multiple perovskite grain interfaces are strengthened through the long-carbochain polymeric backbone, hence producing a continuous and compact perovskite film. As a result, the PVAm-modified OHP RRAM device shows remarkable enhancement of the ON/OFF ratio, long-term stability, and flexibility compared with the unmodified OHP device. Specifically, the polymeric OHP device exhibits fast and stable nonvolatile resistive switching (RS) characteristics with an ON/OFF ratio of ∼105 and a set voltage of -0.45 V under ambient conditions. Also, the distinct multilevel RS behavior can be realized in this device by controlling the compliance current in the SET process. Additionally, the unsealed polymeric OHP device manifests the striking long-term stability, which can still maintain the stable memory performance after 1 year exposure to the humid and thermal ambient environment. Furthermore, the flexible polymeric OHP device was also fabricated and affords the excellent bending endurance behavior by showing a reproducible RS property over 100-cycle bending experiments. This work provides a new perovskite-based material design strategy of polymeric OHP for stable and flexible RRAM devices with the high ON/OFF ratio.
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Affiliation(s)
| | | | | | | | | | - Lifeng Han
- College of Materials and Chemical Engineering , Zhengzhou University of Light Industry , Zhengzhou 450002 , People's Republic of China
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7
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Ercan E, Tsai PC, Chen JY, Lam JY, Hsu LC, Chueh CC, Chen WC. Stretchable and Ambient Stable Perovskite/Polymer Luminous Hybrid Nanofibers of Multicolor Fiber Mats and Their White LED Applications. ACS APPLIED MATERIALS & INTERFACES 2019; 11:23605-23615. [PMID: 31252500 DOI: 10.1021/acsami.9b05527] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We report the fabrication and optical/mechanical properties of perovskite/thermoplastic polyurethane (TPU)-based multicolor luminescent core-shell nanofibers and their large-scale fiber mats. One-step coaxial perovskite/TPU nanofibers had a high photoluminescence quantum yield value exceeding 23.3%, surpassing that of its uniaxial counterpart, due to the homogeneous distribution of perovskite nanoparticles (NPs) by the confinement of the TPU shell. The fabricated core-shell nanofibers exhibited a high mechanical endurance owing to the well elastic properties of TPU and maintained the luminescence intensity even under a 100% stretched state after 1000 stretching-relaxing cycles. By taking advantage of the hydrophobic nature of TPU, the ambient and moisture stability of the fabricated fibers were enhanced up to 1 month. Besides, large-area stretchable nanofibers with a dimension of 15 cm × 30 cm exhibiting various visible-light emission peaks were fabricated by changing the composition of perovskite NPs. Moreover, a large-scale luminescent and stretchable fiber mat was successfully fabricated by electrospinning. Furthermore, the white-light emission from the fabricated fibers and mats was achieved by incorporating orange-light-emitting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] into the TPU shell and coupling the turquoise blue-light-emitting perovskite NPs in the core site. Finally, the integrity of the perovskite-based TPU fibers was realized by fabricating a light-emitting diode (LED) device containing the orange-light-emitting fibers embedded in the polyfluorene emissive layer. This work demonstrated an effective way to prepare stable and stretchable luminous nanofibers and the integration of such nanofibers into LED devices, which could facilitate the future development of wearable electronic devices.
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8
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Influence of ultrasound on multi-site phase transfer catalyzed polymerization of N-vinyl carbazole in two phase system. SN APPLIED SCIENCES 2019. [DOI: 10.1007/s42452-019-0661-7] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022] Open
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9
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Hwang B, Lee JS. A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1701048. [PMID: 28558134 DOI: 10.1002/adma.201701048] [Citation(s) in RCA: 54] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2017] [Revised: 03/25/2017] [Indexed: 06/07/2023]
Abstract
The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH3 NH3 PbI3 layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >105 s. Moreover, the use of sequential vapor deposition is extended to deposit CH3 NH3 PbI3 as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity.
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Affiliation(s)
- Bohee Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
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10
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Hwang B, Lee JS. Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air. Sci Rep 2017; 7:673. [PMID: 28386084 PMCID: PMC5429663 DOI: 10.1038/s41598-017-00778-5] [Citation(s) in RCA: 68] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2016] [Accepted: 03/13/2017] [Indexed: 11/09/2022] Open
Abstract
Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from applying to practical applications. Here, we demonstrate resistive switching memory devices based on organic-inorganic perovskite (CH3NH3PbI3) that have been passivated using thin metal-oxide-layers. CH3NH3PbI3-based memory devices with a solution-processed ZnO passivation layer retain low-voltage operation and, on/off current ratio for more than 30 days in air. Passivation with atomic-layer-deposited (ALD) AlOx is also demonstrated. The resistive switching memory devices with an ALD AlOx passivation layer maintained reliable resistive switching for 30 d in ambient condition, but devices without the passivation layer degraded rapidly and did not show memory properties after 3 d. These results suggest that encapsulation with thin metal-oxide layers is easy and commercially-viable methods to fabricate practical memory devices, and has potential to realize memory devices with long-term stability and reliable, reproducible programmable memory characteristics.
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Affiliation(s)
- Bohee Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea.
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11
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Hwang B, Gu C, Lee D, Lee JS. Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory. Sci Rep 2017; 7:43794. [PMID: 28272547 PMCID: PMC5341555 DOI: 10.1038/srep43794] [Citation(s) in RCA: 37] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2016] [Accepted: 01/30/2017] [Indexed: 11/08/2022] Open
Abstract
Mixed halide perovskite materials are actively researched for solar cells with high efficiency. Their hysteresis which originates from the movement of defects make perovskite a candidate for resistive switching memory devices. We demonstrate the resistive switching device based on mixed-halide organic-inorganic hybrid perovskite CH3NH3PbI3-xBrx (x = 0, 1, 2, 3). Solvent engineering is used to deposit the homogeneous CH3NH3PbI3-xBrx layer on the indium-tin oxide-coated glass substrates. The memory device based on CH3NH3PbI3-xBrx exhibits write endurance and long retention, which indicate reproducible and reliable memory properties. According to the increase in Br contents in CH3NH3PbI3-xBrx the set electric field required to make the device from low resistance state to high resistance state decreases. This result is in accord with the theoretical calculation of migration barriers, that is the barrier to ionic migration in perovskites is found to be lower for Br- (0.23 eV) than for I- (0.29-0.30 eV). The resistive switching may be the result of halide vacancy defects and formation of conductive filaments under electric field in the mixed perovskite layer. It is observed that enhancement in operating voltage can be achieved by controlling the halide contents in the film.
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Affiliation(s)
- Bohee Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
| | - Chungwan Gu
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
| | - Donghwa Lee
- School of Materials Science and Engineering, Chonnam National University, 77 Yongbongro, Buk-gu, Gwangju, 500-757, Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
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12
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Fan F, Zhang B, Cao Y, Chen Y. Solution-processable poly(N-vinylcarbazole)-covalently grafted MoS 2 nanosheets for nonvolatile rewritable memory devices. NANOSCALE 2017; 9:2449-2456. [PMID: 28177014 DOI: 10.1039/c6nr09241a] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A novel nonvolatile rewritable memory device based on the soluble poly(N-vinylcarbazole)-chemically modified MoS2 nanosheets (MoS2-PVK) was fabricated with the configuration of Au/MoS2-PVK/ITO. This is the first example of polymer covalently modified MoS2 nanosheet-based memory devices. As expected, this device exhibited a typical storage performance of nonvolatile rewritable memory, with a turn-on voltage of -1.54 V and an ON/OFF current ratio of 4 × 102. After annealing at 80 °C for 1 h under a nitrogen atmosphere, a high ON/OFF current ratio (up to 3 × 104) and a lower turn-on voltage (-1.31 V), which are among the best reported for MoS2-based polymer/organic memory devices, were achieved due to enhanced crystallization of PVK, which induced a more efficient intramolecular charge transfer effect between PVK and MoS2 during the annealing process. The effect of film thickness on the current-voltage characteristics of the MoS2-PVK-based devices and the memory performance of the MoS2/PVK blends-based devices have also been explored.
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Affiliation(s)
- Fei Fan
- Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China.
| | - Bin Zhang
- Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China.
| | - Yaming Cao
- Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China.
| | - Yu Chen
- Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China.
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Rajagopal A, Williams ST, Chueh CC, Jen AKY. Abnormal Current-Voltage Hysteresis Induced by Reverse Bias in Organic-Inorganic Hybrid Perovskite Photovoltaics. J Phys Chem Lett 2016; 7:995-1003. [PMID: 26927828 DOI: 10.1021/acs.jpclett.6b00058] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
In this study, reverse bias (RB)-induced abnormal hysteresis is investigated in perovskite solar cells (PVSCs) with nickel oxide (NiOx)/methylammonium lead iodide (CH3NH3PbI3) interfaces. Through comprehensive current-voltage (I-V) characterization and bias-dependent external quantum efficiency (EQE) measurements, we demonstrate that this phenomenon is caused by the interfacial ion accumulation intrinsic to CH3NH3PbI3. Subsequently, via systematic analysis we discover that the abnormal I-V behavior is remarkably similar to tunnel diode I-V characteristics and is due to the formation of a transient tunnel junction at NiOx/CH3NH3PbI3 interfaces under RB. The detailed analysis navigating the complexities of I-V behavior in CH3NH3PbI3-based solar cells provided here ultimately illuminates possibilities in modulating ion motion and hysteresis via interfacial engineering in PVSCs. Furthermore, this work shows that RB can alter how CH3NH3PbI3 contributes to the functional nature of devices and provides the first steps toward approaching functional perovskite interfaces in new ways for metrology and analysis of complex transient processes.
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Affiliation(s)
- Adharsh Rajagopal
- Department of Materials Science and Engineering, University of Washington , Seattle, Washington 98195, United States
| | - Spencer T Williams
- Department of Materials Science and Engineering, University of Washington , Seattle, Washington 98195, United States
| | - Chu-Chen Chueh
- Department of Materials Science and Engineering, University of Washington , Seattle, Washington 98195, United States
| | - Alex K-Y Jen
- Department of Materials Science and Engineering, University of Washington , Seattle, Washington 98195, United States
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