Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

Picosecond Femtojoule Resistive Switching in Nanoscale VO2 Memristors

Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and low-power operation has been largely unexplored. We fabricated nanoscale VO2 devices embedded in a broadband test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20 ps long, <1.7 V amplitude voltage pulses at 15 ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition but also the thermal conduction limited metal-to-insulator transition can take place at time scales of 100s of picoseconds. These orders of magnitude breakthroughs can be utilized to design high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization.

A non-oxidizing fabrication method for lithographic break junctions of sensitive metals

Electrochemically active metals offer advanced functionalities with respect to the well-established gold electrode arrangements in various electronic transport experiments on atomic scale objects. Such functionalities can arise from stronger interactions with the leads which provide better coupling to specific molecules and may also facilitate metallic filament formation in atomic switches. However, the higher reactivity of the electrode metal also imposes challenges in the fabrication and reliability of nanometer scale platforms, limiting the number of reported applications. Here we present a high-yield lithographic fabrication procedure suitable to extend the experimental toolkit with mechanically controllable break junctions of oxygen sensitive metallic electrodes. We fabricate and characterize silver break junctions exhibiting single-atomic conductance and superior mechanical and electrical stability at room temperature. As a proof-of-principle application, we demonstrate resistive switching between metastable few-atom configurations at finite voltage bias.

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease of the electric-field-driven redistribution of only a small amount of highly mobile ionic species upon resistive switching. We investigate the memristive behavior of a so-far less explored representative of this class, the Ag/AgI material system in a point contact arrangement established by the conducting PtIr tip of a scanning probe microscope. We demonstrate stable resistive switching duty cycles and investigate the dynamical aspects of non-volatile operation in detail. The high-speed switching capabilities are explored by a custom-designed microwave setup that enables time-resolved studies of subsequent set and reset transitions upon biasing the Ag/AgI/PtIr nanojunctions with sub-nanosecond voltage pulses. Our results demonstrate the potential of Ag-based filamentary memristive nanodevices to serve as the hardware elements in high-speed neuromorphic circuits.

Direct TEM observation of the "acanthite α-Ag2S-argentite β-Ag2S" phase transition in a silver sulfide nanoparticle

For the first time, the α-Ag2S (acanthite)-β-Ag2S (argentite) phase transition in a single silver sulfide nanoparticle has been observed in situ using a high-resolution transmission electron microscopy method in real time. Colloid solutions of Ag2S nanoparticles and nanostructured powders of silver sulfide have been synthesized by one-stage chemical bath deposition from an aqueous solution of silver nitrate, sodium sulfide and sodium citrate. Ag2S nanoparticles were heated to different temperatures directly in an electronic microscope by regulating the energy of the electron beam. This allowed observation of the transition of acanthite into argentite and the reversible transition of argentite into acanthite in real time, and this phase transition to be filmed. Temperature dependence of the lattice constant a arg of argentite β-Ag2S in the temperature range 448-723 K is established by in situ high-temperature X-ray diffraction. The orientation relationships between the monoclinic acanthite α-Ag2S and the body-centered cubic argentite β-Ag2S are determined. It is shown that the possible distances between silver atoms in cubic argentite, in contrast to those in acanthite, are too small for the positions of the metal sublattice to be occupied by Ag atoms with a probability equal to 1.

Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

The microscopic origins and technological impact of 1/f type current fluctuations in Ag based, filamentary type resistive switching devices have been investigated upon downscaling toward the ultimate single atomic limit. The analysis of the low-frequency current noise spectra revealed that the main electronic noise contribution arises from the resistance fluctuations due to internal dynamical defects of Ag nanofilaments. The resulting 0.01-1% current noise ratio, i.e. the total noise level with respect to the mean value of the current, is found to be universal: its magnitude only depends on the total resistance of the device, irrespective of the materials aspects of the surrounding solid electrolyte and of the specific filament formation procedure. Moreover, the resistance dependence of the current noise ratio also displays the diffusive to ballistic crossover, confirming that stable resistive switching operation utilizing Ag nanofilaments is not compromised even in truly atomic scale junctions by technologically impeding noise levels.

In situ impedance matching in Nb/Nb2O5/PtIr memristive nanojunctions for ultra-fast neuromorphic operation

The dynamical aspects of bipolar resistive switchings have been investigated in Nb/Nb₂O₅/PtIr nanojunctions. We found that the widely tuneable ON and OFF state resistances are well separated at low bias. On the other hand, the high-bias regime of the resistive switchings coincides with the onset of a high nonlinearity in the current-voltage characteristics, where the impedance of both states rapidly decreases and becomes equivalent around 50 Ω. This phenomenon enables the overriding of the RC limitations of fast switchings between higher resistance ON and OFF states. Consequently, nanosecond switching times between multiple resistance states due to subnanosecond voltage pulses are demonstrated. Moreover, this finding provides the possibility of impedance engineering by the appropriate choice of voltage signals, which facilitates that both the set and reset transitions take place in an impedance matched manner to the surrounding circuit, demonstrating the merits of ultra-fast operation of Nb₂O₅ based neuromorphic networks.

Mediating Short-Term Plasticity in an Artificial Memristive Synapse by the Orientation of Silica Mesopores

Memristive synapses based on resistive switching are promising electronic devices that emulate the synaptic plasticity in neural systems. Short-term plasticity (STP), reflecting a temporal strengthening of the synaptic connection, allows artificial synapses to perform critical computational functions, such as fast response and information filtering. To mediate this fundamental property in memristive electronic devices, the regulation of the dynamic resistive change is necessary for an artificial synapse. Here, it is demonstrated that the orientation of mesopores in the dielectric silica layer can be used to modulate the STP of an artificial memristive synapse. The dielectric silica layer with vertical mesopores can facilitate the formation of a conductive pathway, which underlies a lower set voltage (≈1.0 V) compared to these with parallel mesopores (≈1.2 V) and dense amorphous silica (≈2.0 V). Also, the artificial memristive synapses with vertical mesopores exhibit the fastest current increase by successive voltage pulses. Finally, oriented silica mesopores are designed for varying the relaxation time of memory, and thus the successful mediation of STP is achieved. The implementation of mesoporous orientation provides a new perspective for engineering artificial synapses with multilevel learning and forgetting capability, which is essential for neuromorphic computing.

Nanostructured silver sulfide: synthesis of various forms and their application

The results of experimental studies on nanostructured silver sulfide are analyzed and generalized. The influence of small particle size on nonstoichiometry of silver sulfide is discussed. Methods for the synthesis of various forms of nanostructured Ag2S including nanopowders, stable colloidal solutions, quantum dots, core – shell nanoparticles and heteronanostructures are described. The advantages and drawbacks of different synthetic procedures are analyzed. Main fields of application of nanostructured silver sulfide are considered.

The bibliography includes 184 references.

Pressure induced photoluminescence modulation in a wide range and synthesis of monodispersed ternary AgCuS nanocrystal based on Ag2S nanocrystals

Binary Ag₂S nanocrystals (NCs) have many potential optical applications because of their low toxicity, narrow direct band gaps and near-infrared photoluminescence (PL) with high emission efficiency. However, due to its small exciton Bohr radius (2.2 nm), the PL spectra of Ag₂S NCs can only be modulated below ∼1200 nm with increasing particle size. Meanwhile, ternary silver copper chalcogenides (AgCuX, X = S, Se) have also attracted increased attention in recent years. Temperature-dependent structural phase transformation leads electrical transport to exhibit fascinating transitions between p and n type conduction, which makes AgCuS and AgCuSe ideal materials for diode or transistor devices. Nevertheless, the traditional method to synthesize these materials is mainly through melting the mixture of Ag, Cu and S/Se powder under extremely high reaction temperatures (973-1373 K) and long reaction time, forming a bulk product. Therefore, the synthesis of high quality monodispersed and size-tunable AgCuS or AgCuSe NCs is still a challenge. To address these issues, in this paper, we report using Ag₂S NCs as a template, a method to synthesize monodispersed and size-tunable β-AgCuS NCs via ion exchange and diffusion processes. Similarly, monodispersed β-AgCuSe NCs were also synthesized by this simple and reproducible strategy. This synthetic method opens new avenues for investigating the size-, morphology- and temperature-dependent phase transitions of these ternary AgCuS and AgCuSe materials. Thus, the corresponding electrical transport between p and n type conduction can be studied in the future. Furthermore, we systematically investigated the pressure-dependent PL properties and band gap modulation of monodispersed Ag₂S NCs using in situ high pressure PL and absorption spectroscopy. We found that the PL peak of 6.0 nm for Ag₂S NCs could be easily adjusted from ∼1200 to 1900 nm with increasing pressure from 0 to 5.1 GPa, which greatly extends the wavelength range of the PL peak beyond that of other approaches.

A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field

Memristor devices have attracted tremendous interest due to different applications ranging from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface roughness of the bottom electrode (BE)/active layer interface provides useful guidelines for the optimization of the memristor switching performance. This study focuses on the effect of surface roughness of the BE electrode on the switching characteristics of Au/TiO₂/Au three-layer memristor devices. An optimized wet-etching treatment condition was found to modify the surface roughness of the Au BE where the measurement results indicate that the roughness of the Au BE is affected by both duration time and solution concentrations of the wet-etching process. Then we fabricated arrays of TiO₂-based nanostructured memristors sandwiched between two sets of cross-bar Au electrode lines (junction area 900 μm²). The results revealed a reduction in the working voltages in current-voltage characteristic of the device performance when increasing the surface roughness at the Au(BE)/TiO₂ active layer interface. The set voltage of the device (V_set) significantly decreased from 2.26-1.93 V when we increased the interface roughness from 4.2-13.1 nm. The present work provides information for better understanding the switching mechanism of titanium-dioxide-based devices, and it can be inferred that enhancing the roughness of the Au BE/TiO₂ active layer interface leads to a localized non-uniform electric field distribution that plays a vital role in reducing the energy consumption of the device.

Multiple Physical Time Scales and Dead Time Rule in Few-Nanometers Sized Graphene-SiOx-Graphene Memristors

The resistive switching behavior in SiO_x-based phase change memory devices confined by few nanometer wide graphene nanogaps is investigated. Our experiments and analysis reveal that the switching dynamics is not only determined by the commonly observed bias voltage dependent set and reset times. We demonstrate that an internal time scale, the dead time, plays a fundamental role in the system's response to various driving signals. We associate the switching behavior with the formation of microscopically distinct SiO_x amorphous and crystalline phases between the graphene electrodes. The reset transition is attributed to an amorphization process due to a voltage driven self-heating; it can be triggered at any time by appropriate voltage levels. In contrast, the formation of the crystalline ON state is conditional and only occurs after the completion of a thermally assisted structural rearrangement of the as-quenched OFF state which takes place within the dead time after a reset operation. Our results demonstrate the technological relevance of the dead time rule which enables a zero bias access of both the low and high resistance states of a phase change memory device by unipolar voltage pulses.

Enhanced non-volatile resistive switching in suspended single-crystalline ZnO nanowire with controllable multiple states

Resistive switching nanostructures are a promising candidate for next-generation non-volatile memories. In this report, we investigate the switching behaviors of single-crystalline ZnO nanowires suspended in air. They exhibit significantly higher current density, lower switching voltage, and more pronounced multiple conductance states compared to nanowires in direct contact with substrate. We attribute the effect to enhanced Joule heating efficiency, reduced surface scattering, and more significantly, the positive feedback established between the current density and local temperature in the suspended nanowires. The proposed mechanism has been quantitatively examined by finite element simulations. We have also demonstrated an innovative approach to initiating the current-temperature mutual enhancement through illumination by ultraviolet light, which further confirmed our hypothesis and enabled even greater enhancement. Our work provides further insight into the resistive switching mechanism of single-crystalline one-dimensional nanostructures, and suggests an effective means of performance enhancement and device optimization.

Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design

Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate stable switching behaviour in metallic Ag-Ag2S-Ag nanojunctions at room temperature exhibiting similar characteristics. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag2S memory cells.

Resistive switching in metallic Ag2S memristors due to a local overheating induced phase transition

Resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated as a function of temperature at different biasing conditions. The observed switching threshold voltages along with the ON and OFF state resistances are quantitatively understood by taking the local overheating of the junction volume and the resulting structural phase transition of the Ag2S matrix into account. Our results demonstrate that the essential characteristics of the resistive switching in Ag2S based nanojunctions can be routinely optimized by suitable sample preparation and biasing schemes.