Tug-of-war between corrugation and binding energy: revealing the formation of multiple moiré patterns on a strongly interacting graphene-metal system

Growth of 1D ClAlPc molecular chains mediated by graphene moiré patterns

The on-surface formation of iso-oriented 1D molecular architectures, with high structural perfection, on 2D materials has been a long-sought objective. However, such realization has been troublesome and limited, and it still remains an experimental challenge. Here, the quasi-1D stripe-like moiré pattern, arising at the interface of graphene grown on Rh(110), has been used to guide the formation of 1D molecular wires of π-conjugated, non-planar, chloro-aluminum phthalocyanine (ClAlPc) molecules, brought together by van der Waals interactions. Using scanning tunnelling microscopy (STM) under ultra-high vacuum (UHV) at 40 K, the preferential adsorption orientations of the molecules at low coverages have been investigated. The results shed light on the potential signature of graphene lattice symmetry breaking, induced by the incommensurate quasi-1D moiré pattern of Gr/Rh(110), as the subtle mechanism behind this templated growth of 1D molecular structures. For coverages close to 1 ML, the molecule-molecule interactions favor a closely packed square lattice arrangement. The present work provides new insights to tailor 1D molecular structures on graphene grown on a non-hexagonal metal substrate.

Mechanism of Corrugated Graphene Moiré Superstructures on Transition-Metal Surfaces

A graphene layer on a transition-metal (TM) surface can be either corrugated or flat, depending on the type of the substrate and its rotation angle with respect to the substrate. It was broadly observed that the degree of corrugation generally decreases with the increase of rotation angle or the decrease of Moiré pattern size. In contrast to a flat graphene on a TM surface, a corrugated graphene layer has an increased binding energy to the substrate and a concomitant elastic energy. Here, we developed a theoretical model about the competition between the binding energy increase and the elastic energy of corrugated graphene layers on TM surfaces in which all the parameters can be calculated by density functional theory (DFT) calculations. The agreement between the theoretical model and the experimental observations of graphene on various TM surfaces, for example, Ru(0001), Rh(111), Pt(111), and Ir(111), substantiated the applicability of this model for graphene on other TM surfaces. Moreover, the morphology of a graphene layer on an arbitrary TM surface can be theoretically predicted through simple DFT calculations based on the model. Our work thus provides a theoretical framework for the intelligent design of graphene/TM superstructures with the desired structure.

Kinetics of Graphene and 2D Materials Growth

During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.

Pseudo-ordered distribution of Ir nanocrystals on h-BN

A 2D material consisting of a pseudo-ordered distribution of Ir nanocrystals supported on a h-BN/Rh(111) surface is presented here. The particular spatial distribution of the Ir nanoparticles is achieved thanks to the existence of a large variety of adsorption positions within the pores of the h-BN/Rh(111) nanomesh template with hexagonal symmetry. The resulting deviations of nanoparticle positions with respect to a perfect hexagonal lattice, which make this material of special interest in the field of optics, can be tuned by the temperature and the amount of Ir. Upon annealing, this material undergoes slight structural changes in the temperature range of 370-570 K and much more drastic ones, due to cluster coalescence, between 670 and 770 K. This relatively high onset of coalescence is encouraging for using this 2D material as a catalyst for reactions such as the oxidation of carbon monoxide or of nitrogen monoxide, which are especially relevant in the field of environmental science. Finally, metal nanostructures exhibiting regular geometries have been created from this material using a scanning tunneling microscope tip. Because of the insulating character of h-BN, these nanostructures could be very promising to use in the design of conductive nanotracks.

High-accuracy large-scale DFT calculations using localized orbitals in complex electronic systems: the case of graphene-metal interfaces

Over many years, computational simulations based on density functional theory (DFT) have been used extensively to study many different materials at the atomic scale. However, its application is restricted by system size, leaving a number of interesting systems without a high-accuracy quantum description. In this work, we calculate the electronic and structural properties of a graphene-metal system significantly larger than in previous plane-wave calculations with the same accuracy. For this task we use a localised basis set with the Conquest code, both in their primitive, pseudo-atomic orbital form, and using a recent multi-site approach. This multi-site scheme allows us to maintain accuracy while saving computational time and memory requirements, even in our exemplar complex system of graphene grown on Rh(1 1 1) with and without intercalated atomic oxygen. This system offers a rich scenario that will serve as a benchmark, demonstrating that highly accurate simulations in cells with over 3000 atoms are feasible with modest computational resources.

Substrate-induced enhancement of the chemical reactivity in metal-supported graphene

Graphene is commonly regarded as an inert material. However, it is well known that the presence of defects or substitutional hetero-atoms confers graphene promising catalytic properties. In this work, we use first-principles calculations to show that it is also possible to enhance the chemical reactivity of a graphene layer by simply growing it on an appropriate substrate. Our comprehensive study demonstrates that, in strongly interacting substrates like Rh(111), graphene adopts highly rippled structures that exhibit areas with distinctive chemical behaviors. According to the local coupling with the substrate, we find areas with markedly different adsorption, dissociation and diffusion pathways for both molecular and atomic oxygen, including a significant change in the nature of the adsorbed molecular and dissociated states, and a dramatic reduction (∼60%) of the O2 dissociation energy barrier with respect to free-standing graphene. Our results show that the graphene-metal interaction represents an additional and powerful handle to tailor the graphene chemical properties with potential applications to nano patterning, graphene functionalization and sensing devices.

Graphene growth by molecular beam epitaxy: an interplay between desorption, diffusion and intercalation of elemental C species on islands

The growth of graphene by molecular beam epitaxy from an elemental carbon precursor is a very promising technique to overcome some of the main limitations of the chemical vapour deposition approach, such as the possibility to synthesize graphene directly on a wide variety of surfaces including semiconductors and insulators. However, while the individual steps of the chemical vapour deposition growth process have been extensively studied for several surfaces, such knowledge is still missing for the case of molecular beam epitaxy, even though it is a key ingredient to optimise its performance and effectiveness. In this work, we have performed a combined experimental and theoretical study comparing the growth rate of the molecular beam epitaxy and chemical vapour deposition processes on the prototypical Ir (111) surface. In particular, by employing high-resolution fast X-ray photoelectron spectroscopy, we were able to follow the growth of both single- and multi-layer graphene in real time, and to identify the spectroscopic fingerprints of the different C layers. Our experiments, supported by density functional theory calculations, highlight the role of the interaction between different C precursor species and the growing graphene flakes on the growth rate of graphene. These results provide an overview of the main differences between chemical vapour deposition and molecular beam epitaxy growth and thus on the main parameters which can be tuned to optimise growth conditions.

Unveiling the atomistic mechanisms for oxygen intercalation in a strongly interacting graphene–metal interface

The atomistic mechanisms involved in the oxygen intercalation in the strongly interacting G/Rh(111) system are characterized in a comprehensive experimental and theoretical study, combining scanning tunneling microscopy and DFT calculations.

TEM nano-Moiré evaluation for an invisible lattice structure near the grain interface

Moiré technique is a powerful, important and effective tool for scientific research, from the nano-scale to the macro-scale, which is essentially the interference between two or more periodic structures with a similar frequency. In this study, an inverse transmission electron microscopy (TEM) nano-Moiré method has been proposed, for the first time, to reconstruct an invisible lattice structure near the grain interface, where only one kind of lattice structure and Moiré fringe were visible in a high resolution TEM (HRTEM) image simultaneously. The inversion process was performed in detail. Three rules were put forward to ensure the uniqueness of the inversion result. The HRTEM image of a top-coat/thermally grown oxide interface in a thermal barrier coating (TBC) structure was observed with coexisting visible lattice and Moiré fringes. Using the inverse TEM nano-Moiré method, the invisible lower layer lattice was inversed and a 3-dimensional structure near the interface was also reconstructed to some degree. The real strain field of oriented invisible and visible lattices and the relative strain field of the Moiré fringe in the grain and near the grain boundary were obtained simultaneously through the subset geometric phase analysis method. The possible failure mechanism and position of the TBC spallation from the nano-scale to the micro-scale were discussed.

Structure and Growth of Hexagonal Boron Nitride on Ir(111)

Using the X-ray standing wave method, scanning tunneling microscopy, low energy electron diffraction, and density functional theory, we precisely determine the lateral and vertical structure of hexagonal boron nitride on Ir(111). The moiré superstructure leads to a periodic arrangement of strongly chemisorbed valleys in an otherwise rather flat, weakly physisorbed plane. The best commensurate approximation of the moiré unit cell is (12 × 12) boron nitride cells resting on (11 × 11) substrate cells, which is at variance with several earlier studies. We uncover the existence of two fundamentally different mechanisms of layer formation for hexagonal boron nitride, namely, nucleation and growth as opposed to network formation without nucleation. The different pathways are linked to different distributions of rotational domains, and the latter enables selection of a single orientation only.

Atomic-Scale Variations of the Mechanical Response of 2D Materials Detected by Noncontact Atomic Force Microscopy

We show that noncontact atomic force microscopy (AFM) is sensitive to the local stiffness in the atomic-scale limit on weakly coupled 2D materials, as graphene on metals. Our large amplitude AFM topography and dissipation images under ultrahigh vacuum and low temperature resolve the atomic and moiré patterns in graphene on Pt(111), despite its extremely low geometric corrugation. The imaging mechanisms are identified with a multiscale model based on density-functional theory calculations, where the energy cost of global and local deformations of graphene competes with short-range chemical and long-range van der Waals interactions. Atomic contrast is related with short-range tip-sample interactions, while the dissipation can be understood in terms of global deformations in the weakly coupled graphene layer. Remarkably, the observed moiré modulation is linked with the subtle variations of the local interplanar graphene-substrate interaction, opening a new route to explore the local mechanical properties of 2D materials at the atomic scale.

Role of the Pinning Points in epitaxial Graphene Moiré Superstructures on the Pt(111) Surface

The intrinsic atomic mechanisms responsible for electronic doping of epitaxial graphene Moirés on transition metal surfaces is still an open issue. To better understand this process we have carried out a first-principles full characterization of the most representative Moiré superstructures observed on the Gr/Pt(111) system and confronted the results with atomically resolved scanning tunneling microscopy experiments. We find that for all reported Moirés the system relaxes inducing a non-negligible atomic corrugation both, at the graphene and at the outermost platinum layer. Interestingly, a mirror “anti-Moiré” reconstruction appears at the substrate, giving rise to the appearance of pinning-points. We show that these points are responsible for the development of the superstructure, while charge from the Pt substrate is injected into the graphene, inducing a local n-doping, mostly localized at these specific pinning-point positions.