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Li H, Wang R, Han S, Zhou Y. Ferroelectric polymers for non‐volatile memory devices: a review. POLYM INT 2020. [DOI: 10.1002/pi.5980] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Affiliation(s)
- Huilin Li
- Institute of Microscale Optoelectronics, Shenzhen University Shenzhen PR China
- Henan Key Laboratory of Photovoltaic MaterialsHenan University Kaifeng PR China
| | - Ruopeng Wang
- College of Electronics and Information EngineeringShenzhen University Shenzhen PR China
| | - Su‐Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University Shenzhen PR China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University Shenzhen PR China
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Xu Q, Liu X, Wan B, Yang Z, Li F, Lu J, Hu G, Pan C, Wang ZL. In 2O 3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications. ACS NANO 2018; 12:9608-9616. [PMID: 30188684 DOI: 10.1021/acsnano.8b05604] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Heat dissipation is a key issue for scaling metal-oxide-semiconductor field-effect transistors (MOSFETs). The Boltzmann distribution of electrons imposes a physical limit on the subthreshold swing (SS), which impedes both the reduction of the switching energy and the further increase of the device density. The negative capacitance effect is proposed to rescue MOSFETs from this phenomenon called "Boltzmann tyranny". Herein, we report In2O3 nanowire (NW) transistors with SS values in the sub-60 mV/dec region, which utilize the ferroelectric P(VDF-TrFE) as the dielectric layer. An ultralow SS down to ∼10 mV/dec is observed and spans over 5 orders of magnitude in the drain current. Meanwhile, a high on/off ratio of more than 108 and a transconductance ( gm) of 2.3 μS are obtained simultaneously at Vd = 0.1 V. The results can be understood by the "voltage amplification" effect induced from the negative capacitance effect. Moreover, the steep slope FET-based inverters indicate a high voltage gain of 41.6. In addition to the NOR and NAND gates, the Schmitt trigger inverters containing only one steep slope FET are demonstrated. This work demonstrates an avenue for low-power circuit design with a steep SS.
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Affiliation(s)
- Qian Xu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Xingqiang Liu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- School of Physics and Electronics , Hunan University , Changsha 410082 , P. R. China
| | - Bensong Wan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
| | - Zheng Yang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Fangtao Li
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
| | - Junfeng Lu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
| | - Guofeng Hu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
- Center on Nanoenergy Research, School of Physical Science and Technology , Guangxi University , Nanning , Guangxi 530004 , P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
- School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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Cai R, Kassa HG, Haouari R, Marrani A, Geerts YH, Ruzié C, van Breemen AJJM, Gelinck GH, Nysten B, Hu Z, Jonas AM. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage. NANOSCALE 2016; 8:5968-5976. [PMID: 26927694 DOI: 10.1039/c6nr00049e] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.
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Affiliation(s)
- Ronggang Cai
- Bio & Soft Matter, Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, Croix du Sud 1/L7.04.02, 1348 Louvain-la-Neuve, Belgium.
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