The favourable large misorientation angle grain boundaries in graphene

Retrieving Grain Boundaries in 2D Materials

The coalescence of randomly distributed grains with different crystallographic orientations can result in pervasive grain boundaries (GBs) in 2D materials during their chemical synthesis. GBs not only are the inherent structural imperfection that causes influential impacts on structures and properties of 2D materials, but also have emerged as a platform for exploring unusual physics and functionalities stemming from dramatic changes in local atomic organization and even chemical makeup. Here, recent advances in studying the formation mechanism, atomic structures, and functional properties of GBs in a range of 2D materials are reviewed. By analyzing the growth mechanism and the competition between far-field strain and local chemical energies of dislocation cores, a complete understanding of the rich GB morphologies as well as their dependence on lattice misorientations and chemical compositions is presented. Mechanical, electronic, and chemical properties tied to GBs in different materials are then discussed, towards raising the concept of using GBs as a robust atomic-scale scaffold for realizing tailored functionalities, such as magnetism, luminescence, and catalysis. Finally, the future opportunities in retrieving GBs for making functional devices and the major challenges in the controlled formation of GB structures for designed applications are commented.

Growth and Selective Etching of Twinned Graphene on Liquid Copper Surface

Although grain boundaries (GBs) in two-dimensional (2D) materials have been extensively observed and characterized, their formation mechanism still remains unexplained. Here a general model has reported to elucidate the mechanism of formation of GBs during 2D materials growth. Based on our model, a general method is put forward to synthesize twinned 2D materials on a liquid substrate. Using graphene growth on liquid Cu surface as an example, the growth of twinned graphene has been demonstrated successfully, in which all the GBs are ultra-long straight twin boundaries. Furthermore, well-defined twin boundaries (TBs) are found in graphene that can be selectively etched by hydrogen gas due to the preferential adsorption of hydrogen atoms at high-energy twins. This study thus reveals the formation mechanism of GBs in 2D materials during growth and paves the way to grow various 2D nanostructures with controlled GBs.

Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives

Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.

Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis

The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS₂ have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.

Hydrogen-Assisted Fast Growth of Large Graphene Grains by Recrystallization of Nanograins

Chemical vapor deposition has been highlighted as a promising tool for facile graphene growth in a large area. However, grain boundaries impose detrimental effects on the mechanical strength or electrical mobility of graphene. Here, we demonstrate that high-pressure hydrogen treatment in the preannealing step plays a key role in fast and large grain growth and leads to the successful synthesis of large grain graphene in 10 s. Large single grains with a maximum size of ∼160 μm grow by recrystallization of nanograins, but ∼1% areal coverage of nanograins remains with 28-30° misorientation angles. Our findings will provide insights into mass production of high-quality graphene.

Growth of twisted bilayer graphene through two-stage chemical vapor deposition

We investigate growth of twisted bilayer graphene through two-stage chemical vapor deposition (CVD). Exploiting the synergetic nucleation and growth dynamics involving carbon sources from the residual carbon impurities in Cu bulk and gaseous CH_x, sub-millimeter-sized single crystalline graphene grains with multiple merged adlayer grains formed underneath are grown on Cu substrate. The distribution of the twist angles is investigated through a computer algorithm utilizing spectral features from micro-Raman mapping. Besides the more thermodynamically stable AB-stacking (AB-BLG) or large angle (>15°) decoupled bilayer graphene (DC-BLG) configurations, there are some bilayer regions that contain specific twist angles (3-8°, 8-13°, and 11-15°) (termed as TBLG). The statistics show no TBLG formation for BLG with single nucleation center. The formation probability of TBLG is strongly dependent on the relative orientation of merging adlayer grains. Significant defects are found at the grain boundaries formed in AB-DC merging event without creating TBLG domain. The areal fraction of TBLG increases as H₂/CH₄ ratio increases. The growth mechanism of TBLG is discussed in light of the interactions between the second layer grains with consideration of strain generation during merging of adlayers.

A Comparative Study of Crystallography and Defect Structure of Corneal Nipple Array in Daphnis nerii Moth and Papilio polytes Butterfly Eye

Moth and butterfly ommatidial nanostructures have been extensively studied for their anti-reflective properties. Especially, from the point of view of sub-wavelength anti-reflection phenomena, the moth eye structures are the archetype example. Here, a comparative analysis of corneal nipples in moth eye (both Male and Female) and butterfly eye (both Male and Female) is given. The surface of moth(Male and Female) and butterfly(Male and Female) eye is defined with regularly arranged hexagonal facets filled with corneal nipples. A detailed analysis using high-resolution scanning electron microscopy images show the intricate hexagonal arrangement of corneal nipples within the individual hexagonal facet. Individual nipples in moth are circular with an average diameter of about 140/165 nm (Male/Female) and average internipple separation of 165 nm. The moth eye show the ordered arrangement of the corneal nipples and the butterfly eye (Male/Female) show an even more complex arrangement of the nipples. Structurally, the corneal nipples in both male and female butterflies are not circular but are polygons with 5, 6, and 7 sides. The average center-to-center separation in the butterfly(Male/Female) is about 260 nm/204 nm, respectively. We find that these corneal nipples are organized into much more dense hexagonal packing with the internipple (edge-to-edge) separation ranging from 20 to 25 nm. Each hexagonal facet is divided into multiple grains separated by boundaries spanning one or two crystallographic defects. These defects are seen in both moth and butterfly. These are typical 5-coordinated and 7-coordinated defect sites typical for a solid-state material with the hexagonal atomic arrangement. Even though the isolated defects are a rarity, interwoven (7-5) defects form a grain boundary between perfectly ordered grains. These defects introduce a low-angle dislocation, and a detailed analysis of the defects is done. The butterfly eye (Male/Female) is defined with extremely high-density corneal nipple with no apparent grains. Each corneal nipple is a polygon with "n" sides (n = 5, 6, and 7). While the 5- and 7-coordinated defects exist, they do not initiate a grain rotation as seen in the moth eyes. To find out the similarity and the difference in the reflectivity of these nanostructured surfaces, we used the effective medium theory and calculated the reflectivity in moth and butterfly eyes. From this simple analysis, we find that females have better anti-reflective properties compared to the males in both moth and butterfly.

Quasi-Monocrystalline Graphene Crystallization on Liquid Copper Matrix

To access the properties of theoretical graphene, it is crucial to manufacture layers with a defect-free structure. The imperfections of the structure are the cause of deterioration in both electrical and mechanical properties. Among the most commonly occurring crystalline defects, there are grain boundaries and overlapping zones. Hence, perfect graphene shall be monocrystalline, which is difficult and expensive to obtain. An alternative to monocrystalline structure is a quasi-monocrystalline graphene with low angle-type boundaries without the local overlapping of neighboring flakes. The purpose of this work was to identify factors that directly affect the structure of graphene grown on a surface of a liquid metal. In the article the growth of graphene on a liquid copper is presented. Nucleating graphene flakes are able to move with three degrees of freedom creating low-angle type boundaries when they attach to one another. The structure of graphene grown with the use of this method is almost free of overlapping zones. In addition, the article presents the influence of impurities on the amount of crystallization nuclei formed, and thus the possibility to order the structure, creating a quasi-monocrystalline layer.

Oxidation of graphene with variable defects: alternately symmetrical escape and self-restructuring of carbon rings

Variable defects such as vacancies and grain boundaries are unavoidable in the synthesis of graphene, but play a central role in the activation of oxidation. Here, we apply reactive molecular dynamics simulations to reveal the underpinning mechanisms of oxidation in graphene with or without defects at the atomic scale. There exist four oxidation modes generating CO2 or CO in different stages, beginning from a single-atom vacancy, and proceeding until the ordered structure broken down into carbon oxide chains. The oxidation process of the graphene sheets experiences four typical stages, in which alternately symmetrical escape phenomenon is observed. Importantly, disordered rings can self-restructure during the oxidation of grain boundaries. Of all defects, the oxidation of vacancy has the lowest energy barrier and is therefore the easiest point of nucleation. This study demonstrates the crucial role of defects in determining the oxidation kinetics, and provides theoretical guidance for the oxidation prevention of graphene and the production of functionalized graphene.

Sizable bandgaps of graphene in 3d transition metal intercalated defective graphene/WSe2 heterostructures

Controlling the electronic and magnetic properties of G/TMD (graphene on transition metal dichalcogenide) heterostructures is essential to develop electronic devices. Despite extensive studies in perfecting G/TMDs, most products have various defects due to the limitations of the fabrication techniques, and research investigating the performances of defective G/TMDs is scarce. Here, we conduct a comprehensive study of the effects of 3d transition metal (TM = Sc–Ni) atom-intercalated G/WSe₂ heterostructures, as well as their defective configurations having single vacancies on graphene or WSe₂ sublayers. Interestingly, Ni-intercalated G/WSe₂ exhibits a small band gap of 0.06 eV, a typical characteristic of nonmagnetic semiconductors. With the presence of one single vacancy in graphene, nonmagnetic (or ferromagnetic) semiconductors with sizable band gaps, 0.10–0.51 eV, can be achieved by intercalating Ti, Cr, Fe and Ni atoms into the heterostructures. Moreover, V and Mn doped non-defective and Sc, V, Co doped defective G/WSe₂ can lead to sizable half metallic band gaps of 0.1–0.58 eV. Further analysis indicates that the significant electron transfer from TM atoms to graphene accounts for the opening of a large band gap. Our results provide theoretical guidance to future applications of G/TMD based heterostructures in (spin) electronic devices.

3d transition metal (TM = Sc–Ni) atom-intercalated G/WSe₂ heterostructures, as well as their defective configurations having single vacancies on graphene or WSe₂ sublayers, are studied.

Kinetics of Graphene and 2D Materials Growth

During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.

The formation and stability of junctions in single-wall carbon nanotubes

The structure and stability of molecular junctions, which connect two single-wall carbon nanotubes (SWCNTs) of different diameters and chiral angles, (n ₁, m ₁)-(n ₂, m ₂), are systematically investigated by density functional tight binding calculations. More than 100 junctions, which connect well-aligned SWCNTs, were constructed and calculated. For a highly stable junction between two chiral (n ₁, m ₁) and (n ₂, m ₂) SWCNTs with opposite handedness, the number of pentagon-heptagon (5/7) pairs required to build the junction can be denoted as ∣∣n ₂ - n ₁∣ - ∣m ₂ - m ₁∣∣+min{∣n ₂ - n ₁∣, ∣m ₂ - m ₁∣} with (n ₂, m ₂) rotating π/3 angle or not. While for a junction connected by two zigzag, armchair or two chiral SWCNTs with the same handedness, the number of 5/7 pairs is equal to ∣n ₁ - n ₂∣ + ∣m ₁ - m ₂∣. Similar to the formation energies of grain boundaries in graphene, the curve of the formation energies vs. chiral angle difference present an 'M' shape indicating the preference of ∼30 degree junctions. Moreover, the formation energies of the zigzag-type and armchair-type junctions with zero misorientation angles are largely sensitive to the diameter difference of two sub-SWCNTs.

Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.

Scattering Theory of Graphene Grain Boundaries

The implementation of graphene-based electronics requires fabrication processes that are able to cover large device areas, since the exfoliation method is not compatible with industrial applications. The chemical vapor deposition of large-area graphene represents a suitable solution; however, it has an important drawback of producing polycrystalline graphene with the formation of grain boundaries, which are responsible for the limitation of the device's performance. With these motivations, we formulate a theoretical model of a single-layer graphene grain boundary by generalizing the graphene Dirac Hamiltonian model. The model only includes the long-wavelength regime of the charge carrier transport, which provides the main contribution to the device conductance. Using symmetry-based arguments deduced from the current conservation law, we derive unconventional boundary conditions characterizing the grain boundary physics and analyze their implications on the transport properties of the system. Angle resolved quantities, such as the transmission probability, are studied within the scattering matrix approach. The conditions for the existence of preferential transmission directions are studied in relation with the grain boundary properties. The proposed theory provides a phenomenological model to study grain boundary physics within the scattering approach, and represents per se an important enrichment of the scattering theory of polycrystalline graphene. Moreover, the outcomes of the theory can contribute to understanding and limiting the detrimental effects of graphene grain boundaries, while also providing a benchmark for more elaborate techniques.

How graphene crosses a grain boundary on the catalyst surface during chemical vapour deposition growth

The chemical vapour deposition (CVD) growth of graphene is normally an epitaxial process, where the atomic structure of the adlayer should copy the texture of the substrate. However, it has been widely observed that single crystalline graphene grown on metal foil may cross a grain boundary (GB) of the substrate without forming any line defect, a necessary condition to change its crystalline orientation and maintain the structure registry with the substrate on the other side of the GB. Here, we present a comprehensive theoretical study on graphene growth behavior on polycrystalline metal substrates. Our density functional theory (DFT) calculations reveal that for graphene growth on most metal surfaces, the binding energy difference between the epitaxial and non-epitaxial graphene on the substrate is not large enough to compensate for the formation energy of a GB in graphene and therefore, during the CVD process, the growing graphene can pass through a GB on the metal surface without changing its crystalline orientation. Hence, graphene CVD growth cannot be strictly regarded as an epitaxial process; this conclusion is further verified by atomic simulations. The present study shows that the growth of graphene on a metal catalyst surface should be regarded rather as a quasi-epitaxial process, where a graphene domain is aligned only on the single crystalline metal facet on which it nucleates, but this structural registry with the metal substrate may be lost when the graphene crosses a GB on the metal surface.

Formation mechanism of overlapping grain boundaries in graphene chemical vapor deposition growth

The formation mechanisms of two different types of grain boundaries (GBs), the weakly bound overlapping GB and the covalent bound GB, during graphene domain coalescence are revealed by both theoretical modeling and experimental observations.

The formation of grain boundaries (GBs) in graphene films is both fundamentally interesting and practically important for many applications. A GB in graphene is known as a linear defect and is formed during the coalescence of two single crystalline graphene domains. The covalent binding between domains is broadly known as the mechanism of GB formation during graphene chemical vapor deposition (CVD) growth. Here, we demonstrate another GB formation mechanism, where two graphene domains are connected by weak van der Waals interactions between overlapping graphene layers. The formation mechanism of the overlapping GBs (OLGBs) is systematically explored theoretically and the proposed conditions for forming OLGBs are validated by experimental observations. This discovery leads to a deep understanding of the mechanism of graphene CVD growth and reveals potential means for graphene quality control in CVD synthesis.

A generalized Read–Shockley model and large scale simulations for the energy and structure of graphene grain boundaries

The grain boundary (GB) energy is a quantity of fundamental importance for understanding several key properties of graphene.