Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO

Patterning of graphene using wet etching with hypochlorite and UV light

Graphene patterning via etching is important for enhancing or controling the properties of devices and supporting their applications in micro- and nano-electronic fields. Herein, we present a simple, low-cost, and scalable wet etching method for graphene patterning. The technique uses hypochlorite solution combined with ultraviolet light irradiation to rapidly remove unwanted graphene areas from the substrate. Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and optical microscopy results showed that well-patterned graphene with micrometer scale regions was successfully prepared. Furthermore, graphene field effect transistor arrays were fabricated, and the obtained devices exhibited good current–voltage characteristics, with maximum mobility of ~ 1600 cm²/Vs, confirming the feasibility of the developed technique.

Self-organized semiconductor nano-network on graphene

A network structure consisting of nanomaterials with a stable structural support and charge path on a large area is desirable for various electronic and optoelectronic devices. Generally, network structures have been fabricated via two main strategies: (1) assembly of pre-grown nanostructures onto a desired substrate and (2) direct growth of nanomaterials onto a desired substrate. In this study, we utilized the surface defects of graphene to form a nano-network of ZnO via atomic layer deposition (ALD). The surface of pure and structurally perfect graphene is chemically inert. However, various types of point and line defects, including vacancies/adatoms, grain boundaries, and ripples in graphene are generated by growth, chemical or physical treatments. The defective sites enhance the chemical reactivity with foreign atoms. ZnO nanoparticles formed by ALD were predominantly deposited at the line defects and agglomerated with increasing ALD cycles. Due to the formation of the ZnO nano-network, the photocurrent between two electrodes was clearly changed under UV irradiation as a result of the charge transport between ZnO and graphene. The line patterned ZnO/graphene (ZnO/G) nano-network devices exhibit sensitivities greater than ten times those of non-patterned structures. We also confirmed the superior operation of a fabricated flexible photodetector based on the line patterned ZnO/G nano-network.

Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization

A novel method to form ultrathin, uniform Al₂O₃ layers on graphene using reversible hydrogen plasma functionalization followed by atomic layer deposition (ALD) is presented. ALD on pristine graphene is known to be a challenge due to the absence of dangling bonds, leading to nonuniform film coverage. We show that hydrogen plasma functionalization of graphene leads to uniform ALD of closed Al₂O₃ films down to 8 nm in thickness. Hall measurements and Raman spectroscopy reveal that the hydrogen plasma functionalization is reversible upon Al₂O₃ ALD and subsequent annealing at 400 °C and in this way does not deteriorate the graphene's charge carrier mobility. This is in contrast with oxygen plasma functionalization, which can lead to a uniform 5 nm thick closed film, but which is not reversible and leads to a reduction of the charge carrier mobility. Density functional theory (DFT) calculations attribute the uniform growth on both H₂ and O₂ plasma functionalized graphene to the enhanced adsorption of trimethylaluminum (TMA) on these surfaces. A DFT analysis of the possible reaction pathways for TMA precursor adsorption on hydrogenated graphene predicts a binding mechanism that cleans off the hydrogen functionalities from the surface, which explains the observed reversibility of the hydrogen plasma functionalization upon Al₂O₃ ALD.

Highly Stable and Effective Doping of Graphene by Selective Atomic Layer Deposition of Ruthenium

The sheet resistance of graphene synthesized by chemical vapor deposition is found to be significantly reduced by the selective atomic layer deposition (ALD) of Ru onto defect sites such as wrinkles and grain boundaries. With 200 ALD cycles, the sheet resistance is reduced from ∼500 to <50 Ω/sq, and the p-type carrier density is drastically increased from 10¹³ to 10¹⁵ cm^-2. At the same time, the carrier mobility is reduced from ∼670 to less than 100 cm² V^-1 s^-1. This doping of graphene proved to be very stable, with the electrical properties remaining unchanged over eight weeks of measurement. Selective deposition of Ru on defect sites also makes it possible to obtain a graphene film that is both highly transparent and electrically conductive (e.g., a sheet resistance of 125 Ω/sq with 92% optical transmittance at 550 nm). Highly doped graphene layers achieved by Ru ALD are therefore expected to provide a viable basis for transparent conducting electrodes.

Co-nucleus 1D/2D Heterostructures with Bi2S3 Nanowire and MoS2 Monolayer: One-Step Growth and Defect-Induced Formation Mechanism

Heterostructures constructed by low-dimensional (such as 0D, 1D, and 2D) materials have opened up opportunities for exploring interesting physical properties and versatile (opto)electronics. Recently, 2D/2D heterostructures, in particular, atomically thin graphene and transition-metal dichalcogenides, including graphene/MoS2, WSe2/MoS2, and WS2/WSe2, were efficiently prepared (by transfer techniques, chemical vapor deposition (CVD) growth, etc.) and systematically studied. In contrast, investigation of 1D/2D heterostructures was still very challenging and rarely reported, and the understanding of such heterostructures was also not well established. Herein, we demonstrate the one-step growth of a heterostructure on the basis of a 1D-Bi2S3 nanowire and a 2D-MoS2 monolayer through the CVD method. Multimeans were employed, and the results proved the separated growth of a Bi2S3 nanowire and a MoS2 sheet in the heterostructure rather than forming a BixMo1-xSy alloy due to their large lattice mismatch. Defect-induced co-nucleus growth, which was an important growth mode in 1D/2D heterostructures, was also experimentally confirmed and systematically investigated in our research. Such 1D/2D heterostructures were further fabricated and utilized in (opto)electronic devices, such as field-effect transistors and photodetectors, and revealed their potential for multifunctional design in electrical properties. The direct growth of such nanostructures will help us to gain a better comprehension of these specific configurations and allow device functionalities in potential applications.