Enhancing CVD graphene's inter-grain connectivity by a graphite promoter

Self-Expansion Based Multi-Patterning for 2D Materials Fabrication beyond the Lithographical Limit

Two-dimensional (2D) materials are promising successors for silicon transistor channels in ultimately scaled devices, necessitating significant research efforts to study their behavior at nanoscopic length scales. Unfortunately, current research has limited itself to direct patterning approaches, which limit the achievable resolution to the diffraction limit and introduce unwanted defects into the 2D material. The potential of multi-patterning to fabricate 2D materials features with unprecedented precision and low complexity at large scale is demonstrated here. By combining lithographic patterning of a mandrel and bottom-up self-expansion, this approach enables pattern resolution one order of magnitude below the lithographical resolution. In-depth characterization of the self-expansion double patterning (SEDP) process reveals the ability to manipulate the critical dimension with nanometer precision through a self-limiting and temperature-controlled oxidation process. These results indicate that the SEDP process can regain the quality and morphology of the 2D material, as shown by high-resolution microscopy and optical spectroscopy. This approach is shown to open up new avenues for research into high-performance, ultra-scaled 2D materials devices for future electronics.

Solid-diffusion-facilitated cleaning of copper foil improves the quality of CVD graphene

The quality of CVD-grown graphene is limited by the parallel nucleation of grains from surface impurities which leads to increased grain boundary densities. Currently employed cleaning methods cannot completely remove surface impurities since impurity diffusion from the bulk to the surface occurs during growth. We here introduce a new method to remove impurities not only on the surface but also from the bulk. By employing a solid cap during annealing that acts as a sink for impurities and leads to an enhancement of copper purity throughout the catalyst thickness. The high efficiency of the solid-diffusion-based transport pathway results in a drastic decrease in the surface particle concentration in a relatively short time, as evident in AFM and SIMS characterization of copper foils. Graphene grown on those substrates displays enhanced grain sizes and room-temperature, large-area carrier mobilities in excess of 5000 cm²/Vs which emphasizes the suitability of our approach for future graphene applications.

Ink-jet patterning of graphene by cap assisted barrier-guided CVD

Barrier-guided CVD growth could provide a new route to printed electronics by combining high quality 2D materials synthesis with scalable and cost-effective deposition methods. Unfortunately, we observe the limited stability of the barrier at growth conditions which results in its removal within minutes due to hydrogen etching. This work describes a route towards enhancing the stability of an ink-jet deposited barrier for high resolution patterning of high quality graphene. By modifying the etching kinetics under confinement, the barrier film could be stabilized and high resolution barriers could be retained even after 6 hours of graphene growth. Thus produced microscopic graphene devices exhibited an increase in conductivity by 6 orders of magnitude and a decrease in defectiveness by 48 times yielding performances that are superior to devices produced by traditional lithographical patterning which indicates the potential of our approach for future electronic applications.

High-resolution graphene patterning through ink-jet deposition of a barrier and subsequent CVD is achieved by a confinement-assisted growth process.

Impact of growth rate on graphene lattice-defect formation within a single crystalline domain

Chemical vapor deposition (CVD) is promising for the large scale production of graphene and other two-dimensional materials. Optimization of the CVD process for enhancing their quality is a focus of ongoing effort and significant progress has been made in decreasing the defectiveness associated with grain boundaries and nucleation spots. However, little is known about the quality and origin of structural defects in the outgrowing lattice which are present even in single-crystalline material and represent the limit of current optimization efforts. We here investigate the formation kinetics of such defects by controlling graphene’s growth rate over a wide range using nanoscale confinements. Statistical analysis of Raman spectroscopic results shows a clear trend between growth rate and defectiveness that is in quantitative agreement with a model where defects are healed preferentially at the growth front. Our results suggest that low growth rates are required to avoid the freezing of lattice defects and form high quality material. This conclusion is confirmed by a fourfold enhancement in graphene’s carrier mobility upon optimization of the growth rate.

How does graphene grow on complex 3D morphologies?

The growth of two-dimensional materials into three-dimensional geometries holds the promise for high performance hybrid materials and novel architectures. The synthesis of such structures, however, proceeds in fundamentally different flow regimes compared to conventional CVD where pressure differences and wall collisions are neglected. We here demonstrate the remarkable stability of graphene growth under varying fluid dynamic flow regimes. We investigate the growth process across different flow conditions using confined growth in refractory pores. Analysis of the growth rate reveals a transport-limited process which allows experimental determination of the gas diffusion coefficient. The diffusion coefficient was found to be constant for large pore dimension but scales with pore dimension as the pore size decreases below the mean free path providing clear evidence for previously predicted Knudsen molecular-flow conditions for atomic confinement. Surprisingly, changes to the flow conditions by two orders of magnitude do not cause qualitative changes of the graphene growth process. This unique behavior was attributed to rarefied flow conditions by scaling analysis and an analytical relation between growth rate and constriction could be extracted that proves accurate throughout the investigated conditions. Our results demonstrate a fundamentally different growth process compared to traditional CVD processes that is akin to atomic layer deposition and highlight the feasibility of high-quality 2D-material growth on 3D morphologies with ultra-high aspect ratios.

Recrystallization of copper at a solid interface for improved CVD graphene growth

Annealing of Cu in contact with a solid cap was found to relax lattice strain and minimize surface roughness which enhanced graphene growth.