QM/MD studies on graphene growth from small islands on the Ni(111) surface

Formation of Graphene on Gold-Nickel Surface Alloys

Nickel (Ni)-catalyzed growth of a single- or rotated-graphene layer is a well-established process above 800 K. In this report, a Au-catalyzed, low-temperature, and facile route at 500 K for graphene formation is described. The substantially lower temperature is enabled by the presence of a surface alloy of Au atoms embedded within Ni(111), which catalyzes the outward segregation of carbon atoms buried in the Ni bulk at temperatures as low as 400-450 K. The resulting surface-bound carbon in turn coalesces into graphene above 450-500 K. Control experiments on a Ni(111) surface show no evidence of carbon segregation or graphene formation at these temperatures. Graphene is identified by its out-of-plane optical phonon mode at 750 cm^-1 and its longitudinal/transverse optical phonon modes at 1470 cm^-1 while surface carbon is identified by its C-Ni stretch mode at 540 cm^-1, as probed by high-resolution electron energy-loss spectroscopy. Dispersion measurements of the phonon modes confirm the presence of graphene. Graphene formation is observed to be maximum at 0.4 ML Au coverage. The results of these systematic molecular-level investigations open the door to graphene synthesis at the low temperatures required for integration with complementary metal-oxide-semiconductor processes.

Nanocrystalline graphene at high temperatures: insight into nanoscale processes

During high temperature pyrolysis of polymer thin films, nanocrystalline graphene with a high defect density, active edges and various nanostructures is formed. The catalyst-free synthesis is based on the temperature assisted transformation of a polymer precursor. The processing conditions have a strong influence on the final thin film properties. However, the precise elemental processes that govern the polymer pyrolysis at high temperatures are unknown. By means of time resolved in situ transmission electron microscopy investigations we reveal that the reactivity of defects and unsaturated edges plays an integral role in the structural dynamics. Both mobile and stationary structures with varying size, shape and dynamics have been observed. During high temperature experiments, small graphene fragments (nanoflakes) are highly unstable and tend to lose atoms or small groups of atoms, while adjacent larger domains grow by addition of atoms, indicating an Ostwald-like ripening in these 2D materials, besides the mechanism of lateral merging of nanoflakes with edges. These processes are also observed in low-dose experiments with negligible electron beam influence. Based on energy barrier calculations, we propose several inherent temperature-driven mechanisms of atom rearrangement, partially involving catalyzing unsaturated sites. Our results show that the fundamentally different high temperature behavior and stability of nanocrystalline graphene in contrast to pristine graphene is caused by its reactive nature. The detailed analysis of the observed dynamics provides a pioneering overview of the relevant processes during ncg heating.

Role of the carbon source in the transformation of amorphous carbon to graphene during rapid thermal processing

A fast transfer-free synthesis of a graphene structure can be successfully achieved by Ni-catalysed transformation of amorphous carbon (a-C) during rapid thermal processing, but the role of the a-C structure in the a-C-to-graphene transformation is still unclear. In this paper, the dependence of the transformation of a-C to graphene, the diffusion behaviour of C, and the graphene quality on the a-C structures was comparatively investigated by reactive molecular dynamics simulation and Ni was selected as a catalyst. The results demonstrated that different a-C structures affected the diffusion of C into Ni layers and the re-dissolving behaviour of the grown graphitic structures, and thus dominated the remnant number of C atoms, which played a critical role in the formation and quality of graphene.

A review of theoretical study of graphene chemical vapor deposition synthesis on metals: nucleation, growth, and the role of hydrogen and oxygen

Graphene has attracted intense research interest due to its extraordinary properties and great application potential. Various methods have been proposed for the synthesis of graphene, among which chemical vapor deposition has drawn a great deal of attention for synthesizing large-area and high-quality graphene. Theoretical understanding of the synthesis mechanism is crucial for optimizing the experimental design for desired graphene production. In this review, we discuss the three fundamental steps of graphene synthesis in details, i.e. (1) decomposition of carbon feedstocks and formation of various active carbon species, (2) nucleation, and (3) attachment and extension. We provide a complete scenario of graphene synthesis on metal surfaces at atomistic level by means of density functional theory, molecular dynamics (MD), Monte Carlo (MC) and their combination and interface with other simulation methods such as quantum mechanical molecular dynamics, density functional tight binding molecular dynamics, and combination of MD and MC. We also address the latest investigation of the influences of the hydrogen and oxygen on the synthesis and the quality of the synthesized graphene.

Catalytic CVD synthesis of boron nitride and carbon nanomaterials - synergies between experiment and theory

Low-dimensional carbon and boron nitride nanomaterials - hexagonal boron nitride, graphene, boron nitride nanotubes and carbon nanotubes - remain at the forefront of advanced materials research. Catalytic chemical vapour deposition has become an invaluable technique for reliably and cost-effectively synthesising these materials. In this review, we will emphasise how a synergy between experimental and theoretical methods has enhanced the understanding and optimisation of this synthetic technique. This review examines recent advances in the application of CVD to synthesising boron nitride and carbon nanomaterials and highlights where, in many cases, molecular simulations and quantum chemistry have provided key insights complementary to experimental investigation. This synergy is particularly prominent in the field of carbon nanotube and graphene CVD synthesis, and we propose here it will be the key to future advances in optimisation of CVD synthesis of boron nitride nanomaterials, boron nitride - carbon composite materials, and other nanomaterials generally.

Temperature effect on the nucleation of graphene on Cu (111)

Repeated thermal cycling by using an organic precursor is shown to be a successful technique for growing graphene on metal substrates. Having control on this process is of vital importance in producing large areas of high quality graphene with well-ordered surface characteristics, which leads us to investigate the effect of temperature on the microscopic mechanisms behind this process. Apart from being an important factor in the dissociation of the organic precursor and promoting the reactions taking place on the surface of the catalyst, temperature also plays a major role in the structure of the catalyst surface. First, we used eight thermal cycles to successfully grow graphene on the surface of Cu (111). Then, we employed Ab Initio Molecular Dynamics (AIMD) simulations to study graphene island alignment evolution at two temperatures. The results shed light on our experimental observations and those reported in the literature and point to the effectiveness of controlled thermal cycling in producing high quality graphene sheets on transition metal catalyst surfaces.

Repeated thermal cycling by using an organic precursor is shown to be a successful technique for growing graphene on metal substrates.

An ab initio study of the nickel-catalyzed transformation of amorphous carbon into graphene in rapid thermal processing

Ab initio molecular dynamics (AIMD) simulations are employed to investigate the chemical mechanism underlying the Ni-catalyzed transformation of amorphous carbon (a-C) into graphene in the rapid thermal processing (RTP) experiment to directly grow graphene on various dielectric surfaces via the evaporation of surplus Ni and C at 1100 °C (below the melting point of bulk Ni). It is found that the a-C-to-graphene transformation entails the metal-induced crystallization and layer exchange mechanism, rather than the conventional dissolution/precipitation mechanism typically involved in Ni-catalyzed chemical vapor deposition (CVD) growth of graphene. The multi-layer graphene can be tuned by changing the relative thicknesses of deposited a-C and Ni thin films. Our AIMD simulations suggest that the easy evaporation of surplus Ni with excess C is likely attributed to the formation of a viscous-liquid-like Ni-C solution within the temperature range of 900-1800 K and to the faster diffusion of C atoms than that of Ni atoms above 600 K. Even at room temperature, sp(3)-C atoms in a-C are quickly converted to sp(2)-C atoms in the course of the simulation, and the graphitic C formation can occur at low temperature. When the temperature is as high as 1200 K, the grown graphitic structures reversely dissolve into Ni. Because the rate of temperature increase is considerably faster in the AIMD simulations than in realistic experiments, defects in the grown graphitic structures are kinetically trapped. In this kinetic growth stage, the carbon structures grown from sp(3)-carbon or from sp(2)-carbon exhibit marked differences.