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Uddin MM, Kabir MH, Ali MA, Hossain MM, Khandaker MU, Mandal S, Arifutzzaman A, Jana D. Graphene-like emerging 2D materials: recent progress, challenges and future outlook. RSC Adv 2023; 13:33336-33375. [PMID: 37964903 PMCID: PMC10641765 DOI: 10.1039/d3ra04456d] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Accepted: 09/18/2023] [Indexed: 11/16/2023] Open
Abstract
Owing to the unique physical and chemical properties of 2D materials and the great success of graphene in various applications, the scientific community has been influenced to explore a new class of graphene-like 2D materials for next-generation technological applications. Consequently, many alternative layered and non-layered 2D materials, including h-BN, TMDs, and MXenes, have been synthesized recently for applications related to the 4th industrial revolution. In this review, recent progress in state-of-the-art research on 2D materials, including their synthesis routes, characterization and application-oriented properties, has been highlighted. The evolving applications of 2D materials in the areas of electronics, optoelectronics, spintronic devices, sensors, high-performance and transparent electrodes, energy conversion and storage, electromagnetic interference shielding, hydrogen evolution reaction (HER), oxygen evolution reaction (OER), and nanocomposites are discussed. In particular, the state-of-the-art applications, challenges, and outlook of every class of 2D material are also presented as concluding remarks to guide this fast-progressing class of 2D materials beyond graphene for scientific research into next-generation materials.
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Affiliation(s)
- Md Mohi Uddin
- Department of Physics, Chittagong University of Engineering and Technology Chattogram-4349 Bangladesh
| | - Mohammad Humaun Kabir
- Department of Physics, Chittagong University of Engineering and Technology Chattogram-4349 Bangladesh
| | - Md Ashraf Ali
- Department of Physics, Chittagong University of Engineering and Technology Chattogram-4349 Bangladesh
| | - Md Mukter Hossain
- Department of Physics, Chittagong University of Engineering and Technology Chattogram-4349 Bangladesh
| | - Mayeen Uddin Khandaker
- Faculty of Graduate Studies, Daffodil International University Daffodil Smart City, Birulia, Savar Dhaka 1216 Bangladesh
- Centre for Applied Physics and Radiation Technologies, School of Engineering and Technology, Sunway University 47500 Bandar Sunway Selangor Malaysia
| | - Sumit Mandal
- Vidyasagar College 39, Sankar Ghosh Lane Kolkata 700006 West Bengal India
| | - A Arifutzzaman
- Tyndall National Institute, University College Cork Lee Maltings Cork T12 R5CP Ireland
| | - Debnarayan Jana
- Department of Physics, University of Calcutta 92 A P C Road Kolkata 700009 West Bengal India
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2
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Han NT, Dien VK, Chang TR, Lin MF. Optical excitations of graphene-like materials: group III-nitrides. NANOSCALE ADVANCES 2023; 5:5077-5093. [PMID: 37705768 PMCID: PMC10496912 DOI: 10.1039/d3na00306j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2023] [Accepted: 08/04/2023] [Indexed: 09/15/2023]
Abstract
By using first-principles calculations, we have studied the electronic and optical characteristics of group III-nitrides, such as BN, AlN, GaN, and InN monolayers. The optimized geometry, quasi-particle energy spectra, charge density distributions, band-decomposed charge densities, and Van Hove singularities in density of states are described in the work using physical and chemical pictures and orbital hybridizations found in B-N, Al-N, Ga-N, and In-N chemical bonds. Moreover, the dielectric functions, energy loss functions, absorption coefficients, and reflectance spectra with electron-hole interactions of optical properties are successfully achieved. More importantly, the close relations between electronic and optical properties are successfully demonstrated. The theoretical framework will be useful to research other graphene-like materials.
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Affiliation(s)
- Nguyen Thi Han
- Department of Physics, National Cheng Kung University 1 University Road Tainan 70101 Taiwan
| | - Vo Khuong Dien
- Department of Physics, National Cheng Kung University 1 University Road Tainan 70101 Taiwan
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University 1 University Road Tainan 70101 Taiwan
- Center for Quantum Frontiers of Research and Technology (QFort) Tainan 70101 Taiwan
- Physics Division, National Center for Theoretical Sciences Taipei 10617 Taiwan
| | - Ming-Fa Lin
- Department of Physics, National Cheng Kung University 1 University Road Tainan 70101 Taiwan
- Hierarchical Green-Energy Material (Hi-GEM) Research Center, National Cheng Kung University Taiwan
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3
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Islam MS, Mazumder AAM, Sohag MU, Sarkar MMH, Stampfl C, Park J. Growth mechanisms of monolayer hexagonal boron nitride ( h-BN) on metal surfaces: theoretical perspectives. NANOSCALE ADVANCES 2023; 5:4041-4064. [PMID: 37560434 PMCID: PMC10408602 DOI: 10.1039/d3na00382e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 07/17/2023] [Indexed: 08/11/2023]
Abstract
Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.
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Affiliation(s)
- Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
| | | | - Minhaz Uddin Sohag
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Md Mosarof Hossain Sarkar
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Catherine Stampfl
- School of Physics, The University of Sydney New South Wales 2006 Australia
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
- School of Electrical Engineering and Computer Science, University of Ottawa Ottawa ON K1N 6N5 Canada
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4
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Zheng P, Wei W, Liang Z, Qin B, Tian J, Wang J, Qiao R, Ren Y, Chen J, Huang C, Zhou X, Zhang G, Tang Z, Yu D, Ding F, Liu K, Xu X. Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides. Nat Commun 2023; 14:592. [PMID: 36737606 PMCID: PMC9898269 DOI: 10.1038/s41467-023-36286-6] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 01/23/2023] [Indexed: 02/05/2023] Open
Abstract
The great challenge for the growth of non-centrosymmetric 2D single crystals is to break the equivalence of antiparallel grains. Even though this pursuit has been partially achieved in boron nitride and transition metal dichalcogenides (TMDs) growth, the key factors that determine the epitaxy of non-centrosymmetric 2D single crystals are still unclear. Here we report a universal methodology for the epitaxy of non-centrosymmetric 2D metal dichalcogenides enabled by accurate time sequence control of the simultaneous formation of grain nuclei and substrate steps. With this methodology, we have demonstrated the epitaxy of unidirectionally aligned MoS2 grains on a, c, m, n, r and v plane Al2O3 as well as MgO and TiO2 substrates. This approach is also applicable to many TMDs, such as WS2, NbS2, MoSe2, WSe2 and NbSe2. This study reveals a robust mechanism for the growth of various 2D single crystals and thus paves the way for their potential applications.
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Affiliation(s)
- Peiming Zheng
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Wenya Wei
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Zhihua Liang
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Biao Qin
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Jinpeng Tian
- grid.9227.e0000000119573309Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
| | - Jinhuan Wang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Ruixi Qiao
- grid.11135.370000 0001 2256 9319International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871 China
| | - Yunlong Ren
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Junting Chen
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Chen Huang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Xu Zhou
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Guangyu Zhang
- grid.9227.e0000000119573309Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China ,grid.511002.7Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808 China
| | - Zhilie Tang
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Dapeng Yu
- grid.263817.90000 0004 1773 1790Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055 China
| | - Feng Ding
- grid.9227.e0000000119573309Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
| | - Kaihui Liu
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China ,grid.11135.370000 0001 2256 9319International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871 China ,grid.511002.7Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808 China
| | - Xiaozhi Xu
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
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5
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Naclerio AE, Kidambi PR. A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207374. [PMID: 36329667 DOI: 10.1002/adma.202207374] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Revised: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.
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Affiliation(s)
- Andrew E Naclerio
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
| | - Piran R Kidambi
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Vanderbilt Institute of Nanoscale Sciences and Engineering, Vanderbilt University, Nashville, TN, 37212, USA
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6
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Zhang L, Meng Y, Koso A, Yao Y, Tang H, Xia S. The mechanism of nitrogen reduction reaction on defective boron nitride (BN) monolayer doped with monatomic Co, Ni, and Mo–A first principles study. Colloids Surf A Physicochem Eng Asp 2022. [DOI: 10.1016/j.colsurfa.2022.129072] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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7
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Zhang Z, Yang X, Liu K, Wang R. Epitaxy of 2D Materials toward Single Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105201. [PMID: 35038381 PMCID: PMC8922126 DOI: 10.1002/advs.202105201] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 12/12/2021] [Indexed: 05/05/2023]
Abstract
Two-dimensional (2D) materials exhibit unique electronic, optical, magnetic, mechanical, and thermal properties due to their special crystal structure and thus have promising potential in many fields, such as in electronics and optoelectronics. To realize their real applications, especially in integrated devices, the growth of large-size single crystal is a prerequisite. Up to now, the most feasible way to achieve 2D single crystal growth is the epitaxy: growth of 2D materials of one or more specific orientations with single-crystal substrate. Only when the 2D domains have the same orientation, they can stitch together seamlessly and single-crystal 2D films can be obtained. In this view, four different epitaxy modes of 2D materials on various substrates are presented, including van der Waals epitaxy, edge epitaxy, step-guided epitaxy, and in-plane epitaxy focusing on the growth of graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenide (TMDC). The lattice symmetry relation and the interaction between 2D materials and the substrate are the key factors determining the epitaxy behaviors and thus are systematically discussed. Finally, the opportunities and challenges about the epitaxy of 2D single crystals in the future are summarized.
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Affiliation(s)
- Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Xiaonan Yang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronicsSchool of PhysicsPeking UniversityBeijing100871China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Rongming Wang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
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8
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Zhang Q, Chen H, Liu S, Yu Y, Wang C, Han J, Shao G, Yao Z. Self-aligned stitching growth of centimeter-scale quasi-single-crystalline hexagonal boron nitride monolayers on liquid copper. NANOSCALE 2022; 14:3112-3122. [PMID: 35142322 DOI: 10.1039/d1nr06045g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional hexagonal boron nitride (hBN) atomic crystals are excellent charge scattering screening interlayers for advanced electronic devices. Although wafer-scale single crystalline hBN monolayer films have been demonstrated on liquid Au and solid Cu (110) and (111) vicinal surfaces, their reproducible growth still remains challenging. Here, we report the facile self-aligned stitching growth of centimeter-scale quasi-single-crystalline hBN monolayer films through synergistic chemical vapor deposition growth kinetics and liquid Cu rheological kinetics control. The sublimation temperature of the ammonia borane precursor, H2 content and melting temperature of the Cu substrate are revealed to be the dominant factors that regulate hBN nucleation, growth and alignment. The flowing liquid Cu catalytic surface promotes efficient rotation of floating triangular hBN domains and provokes uniform self-alignment upon merging at a critical high temperature of 1105 °C. Identical aligned grains are constantly observed at multiple regions, which corroborate the homogeneous in-plane orientation and uniform stitching over the whole growth area. Continuous quasi-single-crystalline hBN monolayer films are produced by seamless stitching of aligned domains with the same polarity. The quasi-single-crystalline hBN monolayers are successfully included as charge scattering and trap site screening interlayers in the hBN/SiO2 gate insulator stack to build high performance InGaZnO field-effect transistors (FETs). Full suppression of hysteresis and twofold enhancement of field-effect mobility are realized for InGaZnO FETs built with hBN as the interface dielectric. The facile growth of large quasi-single-crystalline hBN monolayers on liquid Cu paves the way for future high-performance electronics.
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Affiliation(s)
- Qing Zhang
- School of Materials Science and Engineering, State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou, 450001, China.
| | - Huixin Chen
- School of Materials Science and Engineering, State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou, 450001, China.
| | - Suilin Liu
- Analytical and Testing Center, Sichuan University, Chengdu 610064, China
| | - Yinyin Yu
- School of Materials Science and Engineering, State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou, 450001, China.
| | - Cuiru Wang
- School of Materials Science and Engineering, State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou, 450001, China.
| | - Jian Han
- National Engineering Research Centre for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou 450003, China
| | - Guosheng Shao
- School of Materials Science and Engineering, State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou, 450001, China.
| | - Zhiqiang Yao
- School of Materials Science and Engineering, State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou, 450001, China.
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9
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Roy S, Zhang X, Puthirath AB, Meiyazhagan A, Bhattacharyya S, Rahman MM, Babu G, Susarla S, Saju SK, Tran MK, Sassi LM, Saadi MASR, Lai J, Sahin O, Sajadi SM, Dharmarajan B, Salpekar D, Chakingal N, Baburaj A, Shuai X, Adumbumkulath A, Miller KA, Gayle JM, Ajnsztajn A, Prasankumar T, Harikrishnan VVJ, Ojha V, Kannan H, Khater AZ, Zhu Z, Iyengar SA, Autreto PADS, Oliveira EF, Gao G, Birdwell AG, Neupane MR, Ivanov TG, Taha-Tijerina J, Yadav RM, Arepalli S, Vajtai R, Ajayan PM. Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101589. [PMID: 34561916 DOI: 10.1002/adma.202101589] [Citation(s) in RCA: 117] [Impact Index Per Article: 39.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2021] [Revised: 05/24/2021] [Indexed: 05/09/2023]
Abstract
Hexagonal boron nitride (h-BN) has emerged as a strong candidate for two-dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of state-of-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.
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Affiliation(s)
- Soumyabrata Roy
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ashokkumar Meiyazhagan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sohini Bhattacharyya
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Muhammad M Rahman
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ganguli Babu
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sandhya Susarla
- Materials Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA, 94720, USA
| | - Sreehari K Saju
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Mai Kim Tran
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Lucas M Sassi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - M A S R Saadi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Jiawei Lai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Onur Sahin
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Seyed Mohammad Sajadi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Bhuvaneswari Dharmarajan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Devashish Salpekar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Nithya Chakingal
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Abhijit Baburaj
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Xinting Shuai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Aparna Adumbumkulath
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Kristen A Miller
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Jessica M Gayle
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Alec Ajnsztajn
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Thibeorchews Prasankumar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | | | - Ved Ojha
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Harikishan Kannan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ali Zein Khater
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Zhenwei Zhu
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sathvik Ajay Iyengar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Pedro Alves da Silva Autreto
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Center for Natural and Human Sciences, Federal University of ABC (UFABC), Av. Dos Estados, 5001-Bangú, Santo André - SP, Santo André, 09210-580, Brazil
| | - Eliezer Fernando Oliveira
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Applied Physics Department, State University of Campinas - UNICAMP, Campinas, São Paulo, 13083-859, Brazil
- Center for Computational Engineering and Sciences (CCES), State University of Campinas - UNICAMP, Campinas, São Paulo, 13083-859, Brazil
| | - Guanhui Gao
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - A Glen Birdwell
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Mahesh R Neupane
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Tony G Ivanov
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Jaime Taha-Tijerina
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Engineering Department, Universidad de Monterrey, Av. Ignacio Morones Prieto 4500 Pte., San Pedro Garza Garcí, Monterrey, Nuevo Leon, 66238, Mexico
- Department of Manufacturing and Industrial Engineering, University of Texas Rio Grande Valley, Brownsville, TX, 78520, USA
| | - Ram Manohar Yadav
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Department of Physics, VSSD College, Kanpur, Uttar Pradesh, 208002, India
| | - Sivaram Arepalli
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
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10
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Liu H, You CY, Li J, Galligan PR, You J, Liu Z, Cai Y, Luo Z. Synthesis of hexagonal boron nitrides by chemical vapor deposition and their use as single photon emitters. NANO MATERIALS SCIENCE 2021. [DOI: 10.1016/j.nanoms.2021.03.002] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
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11
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Dong J, Zhang L, Wu B, Ding F, Liu Y. Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives. J Phys Chem Lett 2021; 12:7942-7963. [PMID: 34387496 DOI: 10.1021/acs.jpclett.1c02316] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.
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Affiliation(s)
- Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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12
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Ben J, Liu X, Wang C, Zhang Y, Shi Z, Jia Y, Zhang S, Zhang H, Yu W, Li D, Sun X. 2D III-Nitride Materials: Properties, Growth, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006761. [PMID: 34050555 DOI: 10.1002/adma.202006761] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2020] [Revised: 12/31/2020] [Indexed: 06/12/2023]
Abstract
2D III-nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III-nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin-based devices, and gas detectors. Although the developments of 2D h-BN materials have been successful, the fabrication of other 2D III-nitride materials, such as 2D h-AlN, h-GaN, and h-InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III-nitride materials are summarized. The properties of the 2D III-nitride materials are mainly obtained by first-principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III-nitride materials is focused on 2D h-BN and h-AlN, as the developments of 2D h-GaN and h-InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h-BN materials; however, many potential applications are cited for the entire range of 2D III-nitride materials. Finally, future research directions and prospects in this field are also discussed.
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Affiliation(s)
- Jianwei Ben
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Xinke Liu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Cong Wang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yupeng Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Yuping Jia
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Shanli Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Wenjie Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
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13
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Jankowski M, Saedi M, La Porta F, Manikas AC, Tsakonas C, Cingolani JS, Andersen M, de Voogd M, van Baarle GJC, Reuter K, Galiotis C, Renaud G, Konovalov OV, Groot IMN. Real-Time Multiscale Monitoring and Tailoring of Graphene Growth on Liquid Copper. ACS NANO 2021; 15:9638-9648. [PMID: 34060320 PMCID: PMC8291761 DOI: 10.1021/acsnano.0c10377] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2020] [Accepted: 05/27/2021] [Indexed: 05/25/2023]
Abstract
The synthesis of large, defect-free two-dimensional materials (2DMs) such as graphene is a major challenge toward industrial applications. Chemical vapor deposition (CVD) on liquid metal catalysts (LMCats) is a recently developed process for the fast synthesis of high-quality single crystals of 2DMs. However, up to now, the lack of in situ techniques enabling direct feedback on the growth has limited our understanding of the process dynamics and primarily led to empirical growth recipes. Thus, an in situ multiscale monitoring of the 2DMs structure, coupled with a real-time control of the growth parameters, is necessary for efficient synthesis. Here we report real-time monitoring of graphene growth on liquid copper (at 1370 K under atmospheric pressure CVD conditions) via four complementary in situ methods: synchrotron X-ray diffraction and reflectivity, Raman spectroscopy, and radiation-mode optical microscopy. This has allowed us to control graphene growth parameters such as shape, dispersion, and the hexagonal supra-organization with very high accuracy. Furthermore, the switch from continuous polycrystalline film to the growth of millimeter-sized defect-free single crystals could also be accomplished. The presented results have far-reaching consequences for studying and tailoring 2D material formation processes on LMCats under CVD growth conditions. Finally, the experimental observations are supported by multiscale modeling that has thrown light into the underlying mechanisms of graphene growth.
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Affiliation(s)
- Maciej Jankowski
- Université
Grenoble Alpes, CEA, IRIG/MEM/NRS, 38000 Grenoble, France
- ESRF-The
European Synchrotron, 71 Avenue des Martyrs, 38043 Grenoble, France
| | - Mehdi Saedi
- Leiden
Institute of Chemistry, Leiden University, P.O. Box 9502, 2300 RA Leiden, The Netherlands
| | - Francesco La Porta
- ESRF-The
European Synchrotron, 71 Avenue des Martyrs, 38043 Grenoble, France
| | - Anastasios C. Manikas
- FORTH/ICE-HT
and Department of Chemical Engineering, University of Patras, Patras 26504, Greece
| | - Christos Tsakonas
- FORTH/ICE-HT
and Department of Chemical Engineering, University of Patras, Patras 26504, Greece
| | - Juan S. Cingolani
- Chair
for Theoretical Chemistry and Catalysis Research Center, Technische Universität München, Lichtenbergstrasse 4, 85747 Garching, Germany
| | - Mie Andersen
- Chair
for Theoretical Chemistry and Catalysis Research Center, Technische Universität München, Lichtenbergstrasse 4, 85747 Garching, Germany
| | - Marc de Voogd
- Leiden Probe
Microscopy (LPM), Kenauweg
21, 2331 BA Leiden, The Netherlands
| | | | - Karsten Reuter
- Chair
for Theoretical Chemistry and Catalysis Research Center, Technische Universität München, Lichtenbergstrasse 4, 85747 Garching, Germany
| | - Costas Galiotis
- FORTH/ICE-HT
and Department of Chemical Engineering, University of Patras, Patras 26504, Greece
| | - Gilles Renaud
- Université
Grenoble Alpes, CEA, IRIG/MEM/NRS, 38000 Grenoble, France
| | - Oleg V. Konovalov
- ESRF-The
European Synchrotron, 71 Avenue des Martyrs, 38043 Grenoble, France
| | - Irene M. N. Groot
- Leiden
Institute of Chemistry, Leiden University, P.O. Box 9502, 2300 RA Leiden, The Netherlands
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14
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Park H, Wen Y, Li SX, Choi W, Lee GD, Strano M, Warner JH. Atomically Precise Control of Carbon Insertion into hBN Monolayer Point Vacancies using a Focused Electron Beam Guide. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100693. [PMID: 33960117 DOI: 10.1002/smll.202100693] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2021] [Revised: 03/16/2021] [Indexed: 06/12/2023]
Abstract
Precise controlled filling of point vacancies in hBN with carbon atoms is demonstrated using a focused electron beam method, which guides mobile C atoms into the desired defect site. Optimization of the technique enables the insertion of a single C atom into a selected monovacancy, and preferential defect filling with sub-2 nm accuracy. Increasing the C insertion process leads to thicker 3D C nanodots seeded at the hBN point vacancy site. Other light elements are also observed to bind to hBN vacancies, including O, opening up a wide range of complex defect structures that include B, C, N, and O atoms. The ability to selectively fill point vacancies in hBN with C atoms provides a pathway for creating non-hydrogenated covalently bonded C molecules embedded in the insulating hBN.
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Affiliation(s)
- Hyoju Park
- Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, TX, 78712, USA
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, TX, 78712, USA
| | - Yi Wen
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Sylvia Xin Li
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Woojin Choi
- Department of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Gun-Do Lee
- Department of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul, 08826, Republic of Korea
- Research Institute of Advanced Materials, Seoul National University, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Michael Strano
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jamie H Warner
- Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, TX, 78712, USA
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, TX, 78712, USA
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15
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Zhang L, Dong J, Ding F. Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis. Chem Rev 2021; 121:6321-6372. [PMID: 34047544 DOI: 10.1021/acs.chemrev.0c01191] [Citation(s) in RCA: 53] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS2 have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.
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Affiliation(s)
- Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Jichen Dong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
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16
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Zhu W, Shen J, Li M, Yang K, Bu W, Sun YY, Shi J, Lian J. Kinetically Controlled Growth of Sub-Millimeter 2D Cs 2 SnI 6 Nanosheets at the Liquid-Liquid Interface. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2006279. [PMID: 33373112 DOI: 10.1002/smll.202006279] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2020] [Revised: 11/27/2020] [Indexed: 06/12/2023]
Abstract
Cs2 SnI6 perovskite displays excellent air stability and a high absorption coefficient, promising for photovoltaic and optoelectronic applications. However, Cs2 SnI6 -based device performance is still low as a result of lacking optimized synthesis approaches to obtain high quality Cs2 SnI6 crystals. Here, a new simple method to synthesize single crystalline Cs2 SnI6 perovskite at a liquid-liquid interface is reported. By controlling solvent conditions and Cs2 SnI6 supersaturation at the liquid-liquid interface, Cs2 SnI6 crystals can be obtained from 3D to 2D growth with controlled geometries such as octahedron, pyramid, hexagon, and triangular nanosheets. The formation mechanisms and kinetics of complex shapes/geometries of high quality Cs2 SnI6 crystals are investigated. Freestanding single crystalline 2D nanosheets can be fabricated as thin as 25 nm, and the lateral size can be controlled up to sub-millimeter regime. Electronic property of the high quality Cs2 SnI6 2D nanosheets is also characterized, featuring a n-type conduction with a high carrier mobility of 35 cm2 V-1 s-1 . The interfacial reaction-controlled synthesis of high-quality crystals and mechanistic understanding of the crystal growth allow to realize rational design of materials, and the manipulation of crystal growth can be beneficial to achieve desired properties for potential functional applications.
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Affiliation(s)
- Weiguang Zhu
- Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Junhua Shen
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Mingxin Li
- Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Kun Yang
- Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Wei Bu
- Center for Advanced Radiation Sources, University of Chicago, Chicago, IL, 60637, USA
| | - Yi-Yang Sun
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China
| | - Jian Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Jie Lian
- Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
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17
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Dong J, Zhang L, Dai X, Ding F. The epitaxy of 2D materials growth. Nat Commun 2020; 11:5862. [PMID: 33203853 PMCID: PMC7672100 DOI: 10.1038/s41467-020-19752-3] [Citation(s) in RCA: 66] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2020] [Accepted: 10/19/2020] [Indexed: 12/16/2022] Open
Abstract
Two dimensional (2D) materials consist of one to a few atomic layers, where the intra-layer atoms are chemically bonded and the atomic layers are weakly bonded. The high bonding anisotropicity in 2D materials make their growth on a substrate substantially different from the conventional thin film growth. Here, we proposed a general theoretical framework for the epitaxial growth of a 2D material on an arbitrary substrate. Our extensive density functional theory (DFT) calculations show that the propagating edge of a 2D material tends to align along a high symmetry direction of the substrate and, as a conclusion, the interplay between the symmetries of the 2D material and the substrate plays a critical role in the epitaxial growth of the 2D material. Based on our results, we have outlined that orientational uniformity of 2D material islands on a substrate can be realized only if the symmetry group of the substrate is a subgroup of that of the 2D material. Our predictions are in perfect agreement with most experimental observations on 2D materials' growth on various substrates known up to now. We believe that this general guideline will lead to the large-scale synthesis of wafer-scale single crystals of various 2D materials in the near future.
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Affiliation(s)
- Jichen Dong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Korea
| | - Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea
| | - Xinyue Dai
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Korea
- School of Materials Science and Engineering, Shandong University, 250061, Jinan, China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Korea.
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea.
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18
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Hu T, Mei X, Wang Y, Weng X, Liang R, Wei M. Two-dimensional nanomaterials: fascinating materials in biomedical field. Sci Bull (Beijing) 2019; 64:1707-1727. [PMID: 36659785 DOI: 10.1016/j.scib.2019.09.021] [Citation(s) in RCA: 118] [Impact Index Per Article: 23.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2019] [Revised: 08/22/2019] [Accepted: 09/12/2019] [Indexed: 01/21/2023]
Abstract
Due to their high anisotropy and chemical functions, two-dimensional (2D) nanomaterials have attracted increasing interest and attention from various scientific fields, including functional electronics, catalysis, supercapacitors, batteries and energy materials. In the biomedical field, 2D nanomaterials have made significant contributions to the field of nanomedicine, especially in drug/gene delivery systems, multimodal imaging, biosensing, antimicrobial agents and tissue engineering. 2D nanomaterials such as graphene/graphene oxide (GO)/reduced graphene oxide (rGO), silicate clays, layered double hydroxides (LDHs), transition metal dichalcogenides (TMDs), transition metal oxides (TMOs), black phosphorus (BP), graphitic carbon nitride (g-C3N4), hexagonal boron nitride (h-BN), antimonene (AM), boron nanosheets (B NSs) and tin telluride nanosheets (SnTe NSs) possess excellent physical, chemical, optical and biological properties due to their uniform shapes, high surface-to-volume ratios and surface charge. In this review, we first introduce the properties, structures and synthetic strategies of different configurations of 2D nanomaterials. Recent advances and paradigms of 2D nanomaterials in a variety of biomedical applications, ranging from drug delivery, cancer treatment, bioimaging and tissue engineering to biosensing are discussed afterwards. In the final part, we foresee the development prospects and challenges of 2D nanomaterials after summarizing the research status of ultrathin 2D nanomaterials.
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Affiliation(s)
- Tingting Hu
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Xuan Mei
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yingjie Wang
- Department of Orthopaedics, Peking Union Medical College Hospital, Peking Union Medical College & Chinese Academy of Medical Sciences, Beijing 100730, China
| | - Xisheng Weng
- Department of Orthopaedics, Peking Union Medical College Hospital, Peking Union Medical College & Chinese Academy of Medical Sciences, Beijing 100730, China.
| | - Ruizheng Liang
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China.
| | - Min Wei
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China.
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19
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Liu ZQ, Dong J, Ding F. The geometry of hexagonal boron nitride clusters in the initial stages of chemical vapor deposition growth on a Cu(111) surface. NANOSCALE 2019; 11:13366-13376. [PMID: 31273364 DOI: 10.1039/c9nr02404b] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
To understand the nucleation process in the growth of hexagonal boron nitride (h-BN) on transition metal substrates by chemical vapor deposition (CVD), the energy of formation and stability of h-BN clusters of different geometries on a pristine Cu(111) surface were systematically investigated using density functional theory calculations. We find that unlike carbon clusters, h-BN clusters on Cu supports can undergo two possible transformations of the minimum-energy structure at a critical size of 13. Different from freestanding h-BN clusters, on a Cu(111) surface, h-BN chains are more stable than h-BN rings and thus dominate the minimum-energy structure for cluster sizes lower than the critical size. Thus, depending on the experimental conditions of CVD, one-dimensional Bn-1Nn (N-rich environment) or BnNn-1 (B-rich) chains are first created, and they transform to two-dimensional sp2 networks or h-BN islands, but for a BnNn chain, the transformation to a two-dimensional sp2 network h-BN island does not occur. In contrast to carbon islands where pentagons are readily formed, odd-membered rings are extremely rare in h-BN islands, where the transformation to the most stable structure occurs through a combination of trapeziums and hexagons at the edges, so as to avoid B-B and N-N bonds. Moreover, on a Cu(111) surface, trapeziums are destabilized when the four edges are connected to other hexagons because of additional curvature energy, thus favoring the nucleation of planar nuclei. A deep insight into h-BN cluster formation on a Cu support is vital to understanding the growth mechanism of h-BN on a transition metal surface in CVD experiments to further improve experimental designs in the CVD growth of h-BN.
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Affiliation(s)
- Zhong-Qiang Liu
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea and College of Physics and Engineering, Qufu Normal University, Qufu 273165, P. R. China
| | - Jichen Dong
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea and Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
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20
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Park HJ, Tay RY, Wang X, Zhao W, Kim JH, Ruoff RS, Ding F, Teo EHT, Lee Z. Double-Spiral Hexagonal Boron Nitride and Shear Strained Coalescence Boundary. NANO LETTERS 2019; 19:4229-4236. [PMID: 30844285 DOI: 10.1021/acs.nanolett.8b05034] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Among the different growth mechanisms for two-dimensional (2D) hexagonal boron nitride (h-BN) synthesized using chemical vapor deposition, spiraling growth of h-BN has not been reported. Here we report the formation of intertwined double-spiral few-layer h-BN that is driven by screw dislocations located at the antiphase boundaries of monolayer domains. The microstructure and stacking configurations were studied using a combination of dark-field and atomic resolution transmission electron microscopy. Distinct from other 2D materials with single-spiral structures, the double-spiral structure enables the intertwined h-BN layers to preserve the most stable AA' stacking configuration. We also found that the occurrence of shear strains at the boundaries of merged spiral islands is dependent on the propagation directions of encountering screw dislocations and presented the strained features by density functional theory calculations and atomic image simulations. This study unveils the double-spiral growth of 2D h-BN multilayers and the creation of a shear strain band at the coalescence boundary of two h-BN spiral clusters.
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Affiliation(s)
- Hyo Ju Park
- School of Materials Science and Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Republic of Korea
- Center for Multidimensional Carbon Materials , Institute for Basic Science (IBS) , Ulsan 44919 , Republic of Korea
| | - Roland Yingjie Tay
- School of Electrical and Electronic Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798 , Singapore
- Temasek Laboratories@NTU , 50 Nanyang Avenue , Singapore 639798 , Singapore
| | - Xiao Wang
- Center for Multidimensional Carbon Materials , Institute for Basic Science (IBS) , Ulsan 44919 , Republic of Korea
| | - Wen Zhao
- Center for Multidimensional Carbon Materials , Institute for Basic Science (IBS) , Ulsan 44919 , Republic of Korea
| | - Jung Hwa Kim
- School of Materials Science and Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Republic of Korea
| | - Rodney S Ruoff
- School of Materials Science and Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Republic of Korea
- Center for Multidimensional Carbon Materials , Institute for Basic Science (IBS) , Ulsan 44919 , Republic of Korea
- Department of Chemistry , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Republic of Korea
| | - Feng Ding
- School of Materials Science and Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Republic of Korea
- Center for Multidimensional Carbon Materials , Institute for Basic Science (IBS) , Ulsan 44919 , Republic of Korea
| | - Edwin Hang Tong Teo
- School of Electrical and Electronic Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798 , Singapore
- School of Materials Science and Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798 , Singapore
| | - Zonghoon Lee
- School of Materials Science and Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Republic of Korea
- Center for Multidimensional Carbon Materials , Institute for Basic Science (IBS) , Ulsan 44919 , Republic of Korea
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21
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Dong J, Geng D, Liu F, Ding F. Formation of Twinned Graphene Polycrystals. Angew Chem Int Ed Engl 2019; 58:7723-7727. [DOI: 10.1002/anie.201902441] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2019] [Revised: 03/20/2019] [Indexed: 11/05/2022]
Affiliation(s)
- Jichen Dong
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
| | - Dechao Geng
- Pillar of Engineering Product DevelopmentSingapore University of Technology and Design Singapore 487372 Singapore
| | - Fengning Liu
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
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22
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Affiliation(s)
- Jichen Dong
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
| | - Dechao Geng
- Pillar of Engineering Product DevelopmentSingapore University of Technology and Design Singapore 487372 Singapore
| | - Fengning Liu
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science Ulsan 44919 Republic of Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea
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23
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Liu S, Comer J, van Duin ACT, van Duin DM, Liu B, Edgar JH. Predicting the preferred morphology of hexagonal boron nitride domain structure on nickel from ReaxFF-based molecular dynamics simulations. NANOSCALE 2019; 11:5607-5616. [PMID: 30860524 DOI: 10.1039/c8nr10291k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
An understanding of the nucleation and growth of hexagonal boron nitride (hBN) on nickel substrates is essential to its development as a functional material. In particular, fundamental insights into the formation of the hexagonal lattices with alternating boron (B) and nitrogen (N) atoms could be exploited to control hBN lattice morphologies for targeted applications. In this study, the preferred shapes and edge configurations of atomically smooth hBN on Ni(111) were investigated using molecular dynamics (MD) simulations, along with reactive force field (ReaxFF) developed to represent the Ni/B/N system and the lattice-building B-N bond formation. The obtained hBN lattices, from different B : N feed ratios, are able to confirm that hBN domain geometries can indeed be tuned by varying thermodynamic parameters (i.e., chemical potentials of N and B) - a finding that has only been predicted using quantum mechanical theories. Here, we also showed that the nitrogen fed to the system plays a more crucial role in dictating the size of hBN lattices. With an increase of the relative N content, the simulated hBN domain shapes also transition from equilateral triangles to hexagons, again, consistent with the anticipation based on Density Functional Theory (DFT) calculations. Hence, a plausible approach to acquire a desired hBN nanostructure depends on careful control over the synthesis conditions, which now can benefit from reliable molecular simulations.
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Affiliation(s)
- Song Liu
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, USA.
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24
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Dong J, Zhang L, Ding F. Kinetics of Graphene and 2D Materials Growth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1801583. [PMID: 30318816 DOI: 10.1002/adma.201801583] [Citation(s) in RCA: 45] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2018] [Revised: 07/06/2018] [Indexed: 06/08/2023]
Abstract
During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.
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Affiliation(s)
- Jichen Dong
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Leining Zhang
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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25
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Zhang J, Zhao W, Zhu J. Missing links towards understanding the equilibrium shapes of hexagonal boron nitride: algorithm, hydrogen passivation, and temperature effects. NANOSCALE 2018; 10:17683-17690. [PMID: 30206608 DOI: 10.1039/c8nr04732d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
There is a large discrepancy between the experimental observations and the theoretical predictions in the morphology of hexagonal boron nitride (h-BN) nanosheets. Theoretically predicted hexagons terminated by armchair edges are not observed in experiments; and experimentally observed triangles terminated by zigzag edges are found theoretically unstable. There are two key issues in theoretical investigations, namely, an efficient and accurate algorithm of the absolute formation energy of h-BN edges, and a good understanding of the role of hydrogen passivation during h-BN growth. Here, we first proposed an efficient algorithm to calculate asymmetric edges with a self-consistent accuracy of about 0.0014 eV Å-1. This method can also serve as a standard approach for other two-dimensional (2D) compound materials. Then, by using this method, we discovered that only when edges are passivated by hydrogen atoms and temperature effects are taken into account can experimental morphology be explained. We further employed the Wulff construction to obtain the equilibrium shapes of H-passivated h-BN nanosheets under their typical growth conditions at T = 1300 K and p = 1 bar, and found out that the equilibrium shapes are sensitive to hydrogen passivation and the growth conditions. Our results resolved long-standing discrepancies between experimental observations and theoretical analysis, explaining the thermodynamic driving force of triangular, truncated triangular, and hexagonal shapes, and revealing the key role of hydrogen in h-BN growth. These discoveries and the advancement in the algorithm may open the gateway towards the realization of 2D electronic and spintronic devices based on h-BN.
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Affiliation(s)
- Jingzhao Zhang
- Department of physics, the Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China.
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26
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Lin J, Tay RY, Li H, Jing L, Tsang SH, Wang H, Zhu M, McCulloch DG, Teo EHT. Smoothening of wrinkles in CVD-grown hexagonal boron nitride films. NANOSCALE 2018; 10:16243-16251. [PMID: 30124699 DOI: 10.1039/c8nr03984d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Hexagonal boron nitride (h-BN) is an ideal substrate for two-dimensional (2D) materials because of its unique electrically insulating nature, atomic smoothness and low density of dangling bonds. Although mechanical exfoliation from bulk crystals produces the most pristine flakes, scalable fabrication of devices is still dependent on other more direct synthetic routes. To date, the most utilized method to synthesize large-area h-BN films is by chemical vapor deposition (CVD) using catalytic metal substrates. However, a major drawback for such synthetic films is the manifestation of thermally-induced wrinkles, which severely disrupt the smoothness of the h-BN films. Here, we provide a detailed characterization study of the microstructure of h-BN wrinkles and demonstrate an effective post-synthesis smoothening route by thermal annealing in air. The smoothened h-BN film showed an improved surface smoothness by up to 66% and resulted in a much cleaner surface due to the elimination of polymer residues with no substantial oxidative damage to the film. The unwrinkling effect is attributed to the hydroxylation of the h-BN film as well as the substrate surface, resulting in a reduction in adhesion energy at the interface. Dehydroxylation occurs over time under ambient conditions at room temperature and the smoothened film can be restored back with the intrinsic properties of h-BN. This work provides an efficient route to achieve smoother h-BN films, which are beneficial for high-performance 2D heterostructure devices.
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Affiliation(s)
- Jinjun Lin
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
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27
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Tian H, Khanaki A, Das P, Zheng R, Cui Z, He Y, Shi W, Xu Z, Lake R, Liu J. Role of Carbon Interstitials in Transition Metal Substrates on Controllable Synthesis of High-Quality Large-Area Two-Dimensional Hexagonal Boron Nitride Layers. NANO LETTERS 2018; 18:3352-3361. [PMID: 29727192 DOI: 10.1021/acs.nanolett.7b05179] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Reliable and controllable synthesis of two-dimensional (2D) hexagonal boron nitride (h-BN) layers is highly desirable for their applications as 2D dielectric and wide bandgap semiconductors. In this work, we demonstrate that the dissolution of carbon into cobalt (Co) and nickel (Ni) substrates can facilitate the growth of h-BN and attain large-area 2D homogeneity. The morphology of the h-BN film can be controlled from 2D layer-plus-3D islands to homogeneous 2D few-layers by tuning the carbon interstitial concentration in the Co substrate through a carburization process prior to the h-BN growth step. Comprehensive characterizations were performed to evaluate structural, electrical, optical, and dielectric properties of these samples. Single-crystal h-BN flakes with an edge length of ∼600 μm were demonstrated on carburized Ni. An average breakdown electric field of 9 MV/cm was achieved for an as-grown continuous 3-layer h-BN on carburized Co. Density functional theory calculations reveal that the interstitial carbon atoms can increase the adsorption energy of B and N atoms on the Co(111) surface and decrease the diffusion activation energy and, in turn, promote the nucleation and growth of 2D h-BN.
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Affiliation(s)
- Hao Tian
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Alireza Khanaki
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Protik Das
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Renjing Zheng
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Zhenjun Cui
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Yanwei He
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Wenhao Shi
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Zhongguang Xu
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Roger Lake
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Jianlin Liu
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
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28
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Yu C, Zhang J, Tian W, Fan X, Yao Y. Polymer composites based on hexagonal boron nitride and their application in thermally conductive composites. RSC Adv 2018; 8:21948-21967. [PMID: 35541702 PMCID: PMC9081352 DOI: 10.1039/c8ra02685h] [Citation(s) in RCA: 84] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2018] [Accepted: 06/10/2018] [Indexed: 01/06/2023] Open
Abstract
Hexagonal boron nitride (h-BN) is also referred to as "white graphite". Owing to its two-dimensional planar structure, its thermal conductivity along and perpendicular to a basal plane is anisotropic. However, h-BN exhibits properties that are distinct from those of graphite, such as electric insulation, superior antioxidative ability, and purely white appearance. These qualities render h-BN superior as a filler in composites that require thermal conductivity while exhibiting electric insulation. Since the thermal performance of composites is mainly affected by thermal pathways, this article begins with an overall introduction of the preparation of boron nitride nanosheets, followed by a review of the fabrication of h-BN-filled composites. Lastly, the construction of thermally conductive networks is discussed.
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Affiliation(s)
- Cuiping Yu
- The Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education and Shaanxi Key Laboratory of Macromolecular Science and Technology, School of Science, Northwestern Polytechnical University Xi'an 710072 PR China
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, Joint Key Laboratory of Functional Nanomaterials and Devices, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences Suzhou 215123 PR China
| | - Jun Zhang
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, Joint Key Laboratory of Functional Nanomaterials and Devices, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences Suzhou 215123 PR China
| | - Wei Tian
- The Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education and Shaanxi Key Laboratory of Macromolecular Science and Technology, School of Science, Northwestern Polytechnical University Xi'an 710072 PR China
| | - Xiaodong Fan
- The Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education and Shaanxi Key Laboratory of Macromolecular Science and Technology, School of Science, Northwestern Polytechnical University Xi'an 710072 PR China
| | - Yagang Yao
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, Joint Key Laboratory of Functional Nanomaterials and Devices, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences Suzhou 215123 PR China
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29
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Sharma KP, Sharma S, Khaniya Sharma A, Paudel Jaisi B, Kalita G, Tanemura M. Edge controlled growth of hexagonal boron nitride crystals on copper foil by atmospheric pressure chemical vapor deposition. CrystEngComm 2018. [DOI: 10.1039/c7ce01846k] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
We report on a precursor supply technique controlled h-BN crystal growth over the catalytic activity of Cu by APCVD.
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Affiliation(s)
- Kamal Prasad Sharma
- Department of Frontier Materials
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
| | - Subash Sharma
- Department of Physical Science and Engineering
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
| | - Aliza Khaniya Sharma
- Department of Physical Science and Engineering
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
| | - Balaram Paudel Jaisi
- Department of Physical Science and Engineering
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
| | - Golap Kalita
- Department of Frontier Materials
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
- Department of Physical Science and Engineering
| | - Masaki Tanemura
- Department of Frontier Materials
- Nagoya Institute of Technology Gokiso-cho
- Nagoya 466-8555
- Japan
- Department of Physical Science and Engineering
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30
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Fu X, Zhang R. Energetics of hexagonal boron nitride nanostructures: edge dependence and truncation effects. NANOSCALE 2017; 9:6734-6740. [PMID: 28485444 DOI: 10.1039/c7nr00933j] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The energetics and morphology of pristine hexagonal boron nitride (h-BN) nanosheets are investigated based on a self-consistent-charge density functional tight binding (SCC-DFTB) method. An energy decomposition ansatz based on dangling bond counting is proposed for analysing the energetics of triangular h-BN nanosheets. An unambiguous order of the edge energy of several kinds of edges is obtained: N-terminated zigzag edges have the least energy, armchair edges with alternating B and N atoms have more energy and B-terminated zigzag edges have the most energy. Besides, rhombic h-BN nanosheets with truncated edges are proved to be energetically preferable, consistent with the experimental observation of truncated triangular domains. However, only when the truncation is moderate does it play a favourable role in the energetic stability of h-BN nanosheets. Furthermore, the ratio of the number of B-N bonds on the edges to the number of those in the interior can be a predictor of the energetic stability of a nanosheet. Our calculations provide a rough but clear demonstration of the relationship between the energetic stability and the morphology of monolayer h-BN nanosheets.
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Affiliation(s)
- Xiaoxiao Fu
- Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
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31
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Bayer BC, Caneva S, Pennycook TJ, Kotakoski J, Mangler C, Hofmann S, Meyer JC. Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films. ACS NANO 2017; 11:4521-4527. [PMID: 28410557 PMCID: PMC5444048 DOI: 10.1021/acsnano.6b08315] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2016] [Accepted: 04/14/2017] [Indexed: 05/30/2023]
Abstract
We demonstrate the growth of overlapping grain boundaries in continuous, polycrystalline hexagonal boron nitride (h-BN) monolayer films via scalable catalytic chemical vapor deposition. Unlike the commonly reported atomically stitched grain boundaries, these overlapping grain boundaries do not consist of defect lines within the monolayer films but are composed of self-sealing bilayer regions of limited width. We characterize this overlapping h-BN grain boundary structure in detail by complementary (scanning) transmission electron microscopy techniques and propose a catalytic growth mechanism linked to the subsurface/bulk of the process catalyst and its boron and nitrogen solubilities. Our data suggest that the overlapping grain boundaries are comparatively resilient against deleterious pinhole formation associated with grain boundary defect lines and thus may reduce detrimental breakdown effects when polycrystalline h-BN monolayer films are used as ultrathin dielectrics, barrier layers, or separation membranes.
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Affiliation(s)
- Bernhard C. Bayer
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
| | - Sabina Caneva
- Department
of Engineering, University of Cambridge, 9 J.J. Thomson Avenue, CB3 0FA, Cambridge, U.K.
| | - Timothy J. Pennycook
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
| | - Jani Kotakoski
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
| | - Clemens Mangler
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
| | - Stephan Hofmann
- Department
of Engineering, University of Cambridge, 9 J.J. Thomson Avenue, CB3 0FA, Cambridge, U.K.
| | - Jannik C. Meyer
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
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32
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Meng J, Zhang X, Wang Y, Yin Z, Liu H, Xia J, Wang H, You J, Jin P, Wang D, Meng XM. Aligned Growth of Millimeter-Size Hexagonal Boron Nitride Single-Crystal Domains on Epitaxial Nickel Thin Film. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1604179. [PMID: 28266795 DOI: 10.1002/smll.201604179] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2016] [Revised: 01/09/2017] [Indexed: 06/06/2023]
Abstract
Atomically thin hexagonal boron nitride (h-BN) is gaining significant attention for many applications such as a dielectric layer or substrate for graphene-based devices. For these applications, synthesis of high-quality and large-area h-BN layers with few defects is strongly desirable. In this work, the aligned growth of millimeter-size single-crystal h-BN domains on epitaxial Ni (111)/sapphire substrates by ion beam sputtering deposition is demonstrated. Under the optimized growth conditions, single-crystal h-BN domains up to 0.6 mm in edge length are obtained, the largest reported to date. The formation of large-size h-BN domains results mainly from the reduced Ni-grain boundaries and the improved crystallinity of Ni film. Furthermore, the h-BN domains show well-aligned orientation and excellent dielectric properties. In addition, the sapphire substrates can be repeatedly used with almost no limit. This work provides an effective approach for synthesizing large-scale high-quality h-BN layers for electronic applications.
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Affiliation(s)
- Junhua Meng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xingwang Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Ye Wang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhigang Yin
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Heng Liu
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jing Xia
- Key Lab of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Haolin Wang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jingbi You
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Peng Jin
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Denggui Wang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xiang-Min Meng
- Key Lab of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
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33
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Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE. Sci Rep 2017; 7:786. [PMID: 28400555 PMCID: PMC5429783 DOI: 10.1038/s41598-017-00865-7] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/09/2016] [Accepted: 03/20/2017] [Indexed: 11/09/2022] Open
Abstract
Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN structure was formed at the film/sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2 nA under 100 V, and 100 ± 20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.
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Zhong M, Zhang S, Huang L, You J, Wei Z, Liu X, Li J. Large-scale 2D PbI 2 monolayers: experimental realization and their indirect band-gap related properties. NANOSCALE 2017; 9:3736-3741. [PMID: 28102404 DOI: 10.1039/c6nr07924e] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Large-scale PbI2 monolayers and few layers with high crystallinity and a uniform hexagonal shape were synthesized via a facile physical vapour deposition (PVD) method. The transition from a direct band-gap in the bulk to an indirect band-gap in the monolayer is verified by photoluminescence (PL) spectra, optoelectronic properties, and first principle calculations.
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Affiliation(s)
- Mianzeng Zhong
- Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
| | - Shuai Zhang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China. and School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
| | - Le Huang
- Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
| | - Jingbi You
- Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
| | - Zhongming Wei
- Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
| | - Xinfeng Liu
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China.
| | - Jingbo Li
- Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
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Probing the Atomic Structures of Synthetic Monolayer and Bilayer Hexagonal Boron Nitride Using Electron Microscopy. Appl Microsc 2016. [DOI: 10.9729/am.2016.46.4.217] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022] Open
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36
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Yin J, Li J, Hang Y, Yu J, Tai G, Li X, Zhang Z, Guo W. Boron Nitride Nanostructures: Fabrication, Functionalization and Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016; 12:2942-68. [PMID: 27073174 DOI: 10.1002/smll.201600053] [Citation(s) in RCA: 71] [Impact Index Per Article: 8.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2016] [Revised: 02/26/2016] [Indexed: 05/26/2023]
Abstract
Boron nitride (BN) structures are featured by their excellent thermal and chemical stability and unique electronic and optical properties. However, the lack of controlled synthesis of quality samples and the electrically insulating property largely prevent realizing the full potential of BN nanostructures. A comprehensive overview of the current status of the synthesis of two-dimensional hexagonal BN sheets, three dimensional porous hexagonal BN materials and BN-involved heterostructures is provided, highlighting the advantages of different synthetic methods. In addition, structural characterization, functionalizations and prospective applications of hexagonal BN sheets are intensively discussed. One-dimensional BN nanoribbons and nanotubes are then discussed in terms of structure, fabrication and functionality. In particular, the existing routes in pursuit of tunable electronic and magnetic properties in various BN structures are surveyed, calling upon synergetic experimental and theoretical efforts to address the challenges for pioneering the applications of BN into functional devices. Finally, the progress in BN superstructures and novel B/N nanostructures is also briefly introduced.
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Affiliation(s)
- Jun Yin
- State Key Laboratory of Mechanics and Control of Mechanical Structures Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, P. R. China
| | - Jidong Li
- State Key Laboratory of Mechanics and Control of Mechanical Structures Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, P. R. China
| | - Yang Hang
- State Key Laboratory of Mechanics and Control of Mechanical Structures Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, P. R. China
| | - Jin Yu
- State Key Laboratory of Mechanics and Control of Mechanical Structures Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, P. R. China
| | - Guoan Tai
- State Key Laboratory of Mechanics and Control of Mechanical Structures Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, P. R. China
| | - Xuemei Li
- State Key Laboratory of Mechanics and Control of Mechanical Structures Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, P. R. China
| | - Zhuhua Zhang
- State Key Laboratory of Mechanics and Control of Mechanical Structures Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, P. R. China
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control of Mechanical Structures Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, P. R. China
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