Ultrasensitive terahertz modulation by silicon-grown MoS2 nanosheets

Significant Enhancement in THz Emission and Piezoelectricity in Atomically Thin Nb-Doped MoS2

A significantly enhanced THz radiation generation from femtosecond photoexcited MoS2 layers due to Nb-doping is reported here. Different microscopic mechanisms involved in the THz photocurrent generation vary in their relative contributions in the two cases of photoexcitation, i.e., above and below the electronic bandgap of the layers. For a moderate Nb-doping level of just ∼0.05%, we have observed a multifold enhancement in the THz emission for the case of the above bandgap excitation, which is, though, nearly 1.5 times for the case of the below bandgap excitation of the monolayer MoS2. Alongside the difference in THz generation efficiency, the THz pulse polarity is also reversed at the above bandgap excitation of the Nb-doped layers, consequent to the reversed surface depletion field. Except for a slightly smaller difference in the THz enhancement factor, all the observations are reproducible in the bilayers as well to imply a weaker inversion symmetry and reduced screening of the surface depletion field due to Nb-doping. Furthermore, we employed pristine MoS2 and Nb-doped MoS2 monolayers to fabricate piezoelectric nanogenerator devices. Like enhancement in the ultrafast THz emission, the piezoelectric performance of the nanogenerator, fabricated with the Nb-doped MoS2 monolayer is also increased by a similar factor.

A tunable broadband terahertz MoS2 absorber using series-parallel hybrid network design

A method for designing a broadband absorber using a series-parallel hybrid network is proposed. The performance of the broadband absorber is improved by using frequency-selective surface patterns based on a series-parallel hybrid equivalent circuit. The results indicate that the tunable single-layered terahertz MoS2 absorber has excellent broadband characteristics. Between 0.84 and 2.34 THz, the absorption and relative absorption bandwidth exceed 90% and 94.3%, respectively. Also, the absorption level can be adjusted from 90% to 10% by applying a bias voltage on the electrodes. The effects of different types of MoS2 layers and surface fluctuations in monolayered MoS2 on the properties of the absorber are demonstrated. In the 60° (TM) and 50° (TE) ranges, the polarization of the terahertz absorber is insensitive to the incidence angle. Overall, this method enables the single-layered absorber to exhibit excellent broadband characteristics comparable to those of multilayered structures, as well as simplifies the structure. Consequently, this method significantly broadens the usefulness of tunable single-layered absorbers for radar stealth, terahertz imaging, and electrically tunable modulation.

An ultra-broadband frequency-agile terahertz perfect absorber with perturbed MoS2 plasmon modes

Multidomain dynamic manipulations for terahertz (THz) absorbers usually necessitate the orchestrated actions of several active elements, inevitably complicating the structural design and elongating the modulation time. Herein, we utilize the coupling between the total reflection prism and electrically-driven MoS2 to activate a tight field confinement in a deep-subwavelength interlayer, ultimately achieving frequency-agile absorption adjustments only with a gate voltage. Theoretical and simulation analysis results indicate that the redistributed electric field and susceptible dielectric response are attributed to the limited spatial near-field perturbation of surface plasmon resonances. We also demonstrate that perturbed MoS2 plasmon modes promote the formation of dual-phase singularities, significantly suppressing the attenuation of the absorption amplitude as large-scale frequency shifts, thereby extending the relative tuning range (WRTR) to 175.4%. These findings offer an efficient approach for expanding the horizon of THz absorption applications that require ultra-broadband and swift-response capabilities.

Functionalizing nanophotonic structures with 2D van der Waals materials

The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.

Broadband All-Optical THz Modulator Based on Bi2Te3/Si Heterostructure Driven by UV-Visible Light

All-optical terahertz (THz) modulators have received tremendous attention due to their significant role in developing future sixth-generation technology and all-optical networks. Herein, the THz modulation performance of the Bi₂Te₃/Si heterostructure is investigated via THz time-domain spectroscopy under the control of continuous wave lasers at 532 nm and 405 nm. Broadband-sensitive modulation is observed at 532 nm and 405 nm within the experimental frequency range from 0.8 to 2.4 THz. The modulation depth reaches 80% under the 532 nm laser illumination with a maximum power of 250 mW and 96% under 405 nm illumination with a high power of 550 mW. The mechanism of the largely enhanced modulation depth is attributed to the construction of a type-II Bi₂Te₃/Si heterostructure, which could promote photogenerated electron and hole separation and increase carrier density dramatically. This work proves that a high photon energy laser can also achieve high-efficiency modulation based on the Bi₂Te₃/Si heterostructure, and the UV-Visible control laser may be more suitable for designing advanced all-optical THz modulators with micro-level sizes.

A Voltage-Tuned Terahertz Absorber Based on MoS2/Graphene Nanoribbon Structure

Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge. In this work, we present a thin THz absorber that can be easily tuned through the whole THz range (0.1-10 THz) by applying a low gate voltage (<1 V). The structure is based on cheap and abundant materials (MoS₂/graphene). Nanoribbons of MoS₂/graphene heterostructure are laid over a SiO₂ substrate with an applied vertical gate voltage. The computational model shows that we can achieve an absorptance of approximately 50% of the incident light. The absorptance frequency can be tuned through varying the structure and the substrate dimensions, where the nanoribbon width can be varied approximately from 90 nm to 300 nm, while still covering the whole THz range. The structure performance is not affected by high temperatures (500 K and above), so it is thermally stable. The proposed structure represents a low-voltage, easily tunable, low-cost, and small-size THz absorber that can be used in imaging and detection. It is an alternative to expensive THz metamaterial-based absorbers.

Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe2 Nanofilms

In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe₂ nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe₂ nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency ω_p of 0.23 THz and a lower scattering time τ_s of 70 fs by Drude-Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe₂ film in the range of 0.1-1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm². This work proves that PtSe₂ nanofilm devices are suitable for terahertz modulators.

Thermal and mechanical THz modulation of flexible all-dielectric metamaterial

The implementation of Terahertz (THz) modulation is critical for applications in high-speed wireless communications, security screening and so on. Therefore, it is particularly significant to obtain THz wave modulation devices with stable and flexible performance, easy manipulation of the modulation method, and multi-functionality. Here, we propose a flexible all-dielectric metamaterial by embedding zirconia (ZrO₂) microspheres into a vanadium dioxide/polydimethylsiloxane (VO₂/PDMS) composite, which can achieve thermal and mechanical tuning of THz wave transmission. When the temperature of the ZrO₂/VO₂/PDMS metamaterial increases, VO₂ changes from the insulating phase to the metallic phase, and the 1^st (at 0.304 THz) and 2^nd (at 0.414 THz) order magnetic resonances exhibit the tunability of 20 GHz and 15 GHz, respectively. When stretched, the 1^st and 2^nd order magnetic resonances show the tunability of 12 GHz and 10 GHz, respectively. In the meantime, there are accompanying changes in transmittance at the resonances. The ZrO₂/VO₂/PDMS all-dielectric metamaterial presented in this work provides an alternative strategy for developing actively tunable, flexible, and versatile THz devices. In addition, it has the merits of simple preparation and low cost, promising large-area and rapid preparation of meta-arrays.

Wafer-scale freestanding vanadium dioxide film

Vanadium dioxide (VO₂), with well-known metal-to-insulator phase transition, has been used to realize intriguing smart functions in photodetectors, modulators, and actuators. Wafer-scale freestanding VO₂ (f-VO₂) films are desirable for integrating VO₂ with other materials into multifunctional devices. Unfortunately, their preparation has yet to be achieved because the wafer-scale etching needs ultralong time and damages amphoteric VO₂ whether in acid or alkaline etchants. Here, we achieved wafer-scale f-VO₂ films by a nano-pinhole permeation-etching strategy in 6 min, far less than that by side etching (thousands of minutes). The f-VO₂ films retain their pristine metal-to-insulator transition and intrinsic mechanical properties and can be conformably transferred to arbitrary substrates. Integration of f-VO₂ films into diverse large-scale smart devices, including terahertz modulators, camouflageable photoactuators, and temperature-indicating strips, shows advantages in low insertion loss, fast response, and low triggering power. These f-VO₂ films find more intriguing applications by heterogeneous integration with other functional materials.

Bilayer MoS2 on silicon for higher terahertz amplitude modulation

The terahertz (THz) amplitude modulation has been experimentally demonstrated by employing bilayer molybdenum disulfide (MoS2) on high-resistivity silicon (Si). The Raman spectroscopy and x-ray photoelectron spectra confirm the formation of bilayer MoS2 film. The THz transmission measurements are carried out using a continuous wave (CW) frequency-domain THz system. This reveals the higher modulation depth covering wide THz spectra of 0.1–1 THz at low optical pumping power. The modulation depth up to 72.3% at 0.1 THz and 62.8% at 0.9 THz under low power optical excitation is achieved. After annealing, the strong built-in electric field is induced at the MoS2–Si interface due to p-type doping in MoS2. This improves modulation depth to 86.4% and 79.7%, respectively. The finite-difference time-domain (FDTD) based numerical simulations match well with the experimental results. The higher modulation depth at low optical power, broadband response, low insertion losses, and simplicity in the design are the key attributes of this THz modulator.

2D Materials Enabled Next-Generation Integrated Optoelectronics: from Fabrication to Applications

2D materials, such as graphene, black phosphorous and transition metal dichalcogenides, have gained persistent attention in the past few years thanks to their unique properties for optoelectronics. More importantly, introducing 2D materials into silicon photonic devices will greatly promote the performance of optoelectronic devices, including improvement of response speed, reduction of energy consumption, and simplification of fabrication process. Moreover, 2D materials meet the requirements of complementary metal-oxide-semiconductor compatible silicon photonic manufacturing. A comprehensive overview and evaluation of state-of-the-art 2D photonic integrated devices for telecommunication applications is provided, including light sources, optical modulators, and photodetectors. Optimized by unique structures such as photonic crystal waveguide, slot waveguide, and microring resonator, these 2D material-based photonic devices can be further improved in light-matter interactions, providing a powerful design for silicon photonic integrated circuits.

All-optical spatial terahertz modulator with surface-textured and passivated silicon

For a Si-based all-optical spatial terahertz modulator (STM), an enhanced modulation efficiency under low illumination density would be of great significance to exploit the competence of THz technology in real-world applications. We presented here an implementation of such a device by microtexturing and passivating the Si surface, forming a truncated pyramidal array (TPA). This TPA structure with SiO₂ passivating coatings not only decreases light reflectance and expands the active area for THz modulation but also remarkably increases the photogenerated carrier lifetime. These 3-fold benefits render Si-TPA superior to bare-Si with respect to the achievable modulation efficiency, especially at low irradiation power. Furthermore such a Si-TPA device is also more applicable than its counterpart that is only passivated by SiO₂ nanocoatings, even though the Si-SiO₂ has a slightly increased modulation efficiency. These periodically aligned pyramids resembled as a mesa array significantly suppress the lateral diffusion induced by longer diffusion, resulting in an equivalent resolution of bare-Si. This novel Si-TPA based STM is highly desired for realizing a high-performance THz imager and provides a feasible approach to breaking the trade-off between resolution and modulation efficiency.

Optical-Transparent Self-Assembled MXene Film with High-Efficiency Terahertz Reflection Modulation

The modulation of the terahertz (THz) wave is fundamental for its applications in next-generation communications, biological imaging, sensing, and so forth. Searching for higher efficient modulation is still in progress, although plenty of materials have been explored for tuning THz wave. In this work, optical-transparent self-assembled MXene films are used to modulate the THz reflection at the SiO₂/MXene/air interface based on the impedance matching mechanism. By adjusting the number of stacked MXene layers/concentrations of MXene dispersions, the sheet conductivity of the MXene films will be changed so that the impedance at the SiO₂/MXene/air interface can be tuned and lead to a giant modulation of THz reflection. Particularly, we demonstrate that the MXene films have highly efficient THz modulation from antireflection to reflection-enhancing with a relative reflection of 27% and 406%, respectively. This work provides a new pathway for developing the MXene films with the combination of optical-transparency and high smart THz reflection characteristics, and the films can be applied for THz antireflection or reflection-enhancing.

Bi2O2Se for broadband terahertz wave switching

Many modern terahertz systems require dynamic manipulation of a terahertz wave. We proposed a terahertz wave switch based on a Bi₂O₂Se/Si structure. The transmittance and conductivity characteristics of the Bi₂O₂Se in a terahertz region have been measured by terahertz time-domain spectroscopy and analyzed using the Drude model. An ON-OFF switching speed as fast as 2 MHz and an extinction ratio as high as 17.7 dB was achieved at an external laser irradiance of 1.3W/cm². The switching characteristics of the device can be explained by the accumulation of carriers at the interface that induces terahertz wave intense absorption. Our approach can effectively be used to realize a wide range of dynamically tunable terahertz functional devices. This makes its use viable for a range of communication, imaging, and sensing applications.

Terahertz smart dynamic and active functional electromagnetic metasurfaces and their applications

The demand for smart and multi-functional applications in the terahertz (THz) frequency band, such as for communication, imaging, spectroscopy, sensing and THz integrated circuits, motivates the development of novel active, controllable and informational devices for manipulating and controlling THz waves. Metasurfaces are planar artificial structures composed of thousands of unit cells or metallic structures, whose size is either comparable to or smaller than the wavelength of the illuminated wave, which can efficiently interact with the THz wave and exhibit additional degrees of freedom to modulate the THz wave. In the past decades, active metasurfaces have been developed by combining diode arrays, two-dimensional active materials, two-dimensional electron gases, phase transition material films and other such elements, which can overcome the limitations of conventional bulk materials and structures for applications in compact THz multi-functional antennas, diffractive devices, high-speed data transmission and high-resolution imaging. In this paper, we provide a brief overview of the development of dynamic and active functional electromagnetic metasurfaces and their applications in the THz band in recent years. Different kinds of active metasurfaces are cited and introduced. We believe that, in the future, active metasurfaces will be combined with digitalization and coding to yield more intelligent metasurfaces, which can be used to realize smart THz wave beam scanning, automatic target recognition imaging, self-adaptive directional high-speed data transmission network, biological intelligent detection and other such applications. This article is part of the theme issue 'Advanced electromagnetic non-destructive evaluation and smart monitoring'.

An Optically Tunable THz Modulator Based on Nanostructures of Silicon Substrates

Nanostructures can induce light multireflection, enabling strong light absorption and efficient photocarrier generation. In this work, silicon nanostructures, including nanocylinders, nanotips, and nanoholes, were proposed as all-optical broadband THz modulators. The modulation properties of these modulators were simulated and compared with finite element method calculations. It is interesting to note that the light reflectance values from all nanostructure were greatly suppressed, showing values of 26.22%, 21.04%, and 0.63% for nanocylinder, nanohole, and nanotip structures, respectively, at 2 THz. The calculated results show that under 808 nm illumination light, the best modulation performance is achieved in the nanotip modulator, which displays a modulation depth of 91.63% with a pumping power of 60 mW/mm² at 2 THz. However, under shorter illumination wavelengths, such as 532 nm, the modulation performance for all modulators deteriorates and the best performance is found with the nanohole-based modulator rather than the nanotip-based one. To further clarify the effects of the nanostructure and wavelength on the THz modulation, a graded index layer model was established and the simulation results were explained. This work may provide a further theoretical guide for the design of optically tunable broadband THz modulators.

High extinction ratio terahertz broadband polarizer based on the aligned Ni nanowire arrays

We present a broadband terahertz (THz) polarizer based on the stacks of aligned Ni nanowire (NW) arrays. We demonstrated that the polarizer has an extinction ratio of 58.8 dB and an average extinction ratio of 46.6 dB throughout a frequency range of 0.3-2.3 THz. Compared to carbon-nanotube and metallic wire-grid polarizers, our Ni-NW polarizers with rapid, reliable, low-cost fabrication processes are ideal candidates for emerging THz technologies.

An in situ rewritable electrically-erasable photo-memory device for terahertz waves

A terahertz read-only in situ electrically-erasable rewritable photo-memory device based on a perovskite:Ag (perovskite with Ag nanoparticles added)/SnO₂/PEDOT:PSS hetero-junction structure is reported. Under low optical excitation, considerable terahertz amplitude modulation in a perovskite:Ag/PEDOT:PSS hybrid structure was achieved. When a SnO₂ nanoparticle film was inserted between the perovskite and PEDOT:PSS layer, the attenuation of the terahertz signal was weaker than that of the perovskite:Ag/PEDOT:PSS hybrid structure; however, the SnO₂ nanoparticle film considerably prolonged the recovery time of the modulated terahertz wave in air after photo-excitation was stopped. In addition, when bias voltages were applied to the perovskite:Ag/PEDOT:PSS and perovskite:Ag/SnO₂/PEDOT:PSS hybrid structures, respectively, the terahertz signals recovered rapidly for both structures. Consequently, the photo-memory functionality was achieved based on a perovskite:Ag/SnO₂/PEDOT:PSS hybrid structure with an in situ method for erasing stored information.

Independent tunable multi-band absorbers based on molybdenum disulfide metasurfaces

In this paper, we theoretically and numerically demonstrate a dual-band independently adjustable absorber comprising an array of stacked molybdenum disulfide (MoS₂) coaxial nanodisks and a gold reflector that are separated by two dielectric insulating layers. The array plane functionality is explained by the dipole resonances with the MoS₂ nanodisks. As a result, strong absorption is achieved at a wide range of incident angles under TE and TM polarizations. The structural parameters of the entire array and the carrier concentration in the MoS₂ layers were varied to get the optimized absorption. The absorptance positioning can be adjusted by scaling the diameters of the MoS₂ disks. We also proposed the array modification where nanodisks are replaced by a layer with nanoholes. The position of both absorptance peaks can be adjusted individually by changing the carrier concentration in the array. This structure can be useful for the design of chemical sensors, detectors or multi-band absorbers.

Terahertz nonvolatile in situ electrically erasable-rewritable photo-memory based on indium oxide/PEDOT:PSS

A terahertz (THz) nonvolatile in situ electrically erasable-rewritable photo-memory based on indium oxide (In₂O₃) nanoparticles is reported. The In₂O₃/PEDOT:PSS/quartz sample increases its conductivity and attenuates its THz transmission under optical excitation. When this optical excitation is terminated, the modulated THz transmission recovers to its original value in an air environment slightly. The modulated THz transmission recovered more rapidly with increasing bias voltage. Nonvolatile digital information storage is enabled when the In₂O₃/PEDOT:PSS/quartz structure is encapsulated in nitrogen. The photo-memory can be rewritten after in situ electrical erasure. The results show that in situ electrically erasable terahertz nonvolatile rewritable photo-memories are feasible.

A Review of THz Modulators with Dynamic Tunable Metasurfaces

Terahertz (THz) radiation has received much attention during the past few decades for its potential applications in various fields, such as spectroscopy, imaging, and wireless communications. To use terahertz waves for data transmission in different application systems, the efficient and rapid modulation of terahertz waves is required and has become an in-depth research topic. Since the turn of the century, research on metasurfaces has rapidly developed, and the scope of novel functions and operating frequency ranges has been substantially expanded, especially in the terahertz range. The combination of metasurfaces and semiconductors has facilitated both new opportunities for the development of dynamic THz functional devices and significant achievements in THz modulators. This paper provides an overview of THz modulators based on different kinds of dynamic tunable metasurfaces combined with semiconductors, two-dimensional electron gas heterostructures, superconductors, phase-transition materials, graphene, and other 2D material. Based on the overview, a brief discussion with perspectives will be presented. We hope that this review will help more researchers learn about the recent developments and challenges of THz modulators and contribute to this field.

Manipulation enhancement of terahertz liquid crystal phase shifter magnetically induced by ferromagnetic nanoparticles

Ferromagnetic liquid crystals (FLCs), the suspensions of magnetic nanoparticles dispersed at different concentrations in liquid crystals (LCs), and their special magnetically induced birefringence characteristics have been investigated in the terahertz regime, mainly focusing on the interaction between magnetic cluster chains and LC molecules. We experimentally demonstrated the surface anchoring effect of the magnetic cluster chains on LC molecules in a mm-thick LC cell under an extremely weak external magnetic field (EMF), leading to a uniform anchoring arrangement of the LC molecules over the entire LC cell. Unlike pure 5CB LCs, the phase shift range of the FLCs at 1.45 THz up to π (no to ne or ne to no) can be achieved over the whole tunable range by simply changing the magnitude of the EMF without changing its direction, and the optical axis of LC molecules can be controlled to rotate by 90°, thereby realizing a tunable THz wave plate. This work provides a new way in the development of THz magneto-optic devices and phase devices.

Mechanical modulation of terahertz wave via buckled carbon nanotube sheets

Manipulation of terahertz (THz) wave plays an important role in THz imaging, communication, and detection. The difficulty in manipulating the THz wave includes single function, untunable, and inconvenient integration. Here, we present a mechanically tunable THz polarizer by using stretchable buckled carbon nanotube sheets on natural rubber substrate (BCNTS/rubber). The transmittance and degree of polarization of THz wave can be modulated by stretching the BCNTS/rubber. The experiments showed that the degree of polarization increased from 17% to 97%, and the modulation depth reached 365% in the range of 0.2-1.2 THz, as the BCNTS/rubber was stretched from 0% to 150% strain. These changes can be also used for high strain sensing up to 150% strain, with a maximum sensitivity of 2.5 M/S. A spatial modulation of THz imaging was also realized by stretching and rotating BCNTS/rubber. The theoretical analysis and numerical modeling further confirm the BCNTS/rubber changes from weak anisotropic to highly anisotropic structure, which play key roles in THz wave modulation. This approach for active THz wave manipulation can be widely used in polarization imaging, wearable material for security, and highly sensitive strain sensing.

Trilayer hybrid structures for highly efficient THz modulation

We demonstrate a novel technique to achieve a highly efficient terahertz (THz) modulation based on hybrid structures of organic layers (fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) fabricated on both sides of a silicon (Si) substrate. The organic layer generating an optically induced electron (or hole) transfer is deposited on the back (or front) side of the Si substrate. The spatial charge separation improved owing to the transferred photo-excited electrons or holes at both interfaces of PCBM/Si and TIPS-pentacene/Si, enables a highly efficient THz wave modulation. The photoexcitation on the hole-transfer organic layer (TIPS-pentacene/Si) further improves the modulation efficiency, as the diffusion of electrons through the Si substrate is faster than that of photo-excited holes.

Terahertz wave modulation enhanced by laser processed PVA film on Si substrate

An optically pumped ultrasensitive broadband terahertz (THz) wave modulator based on polyvinyl alcohol (PVA) film on Si wafer was demonstrated in this work. The THz time domain spectroscopy experiments confirm that the PVA/Si can drastically enhance the photo-induced THz wave modulation on the Si surface, especially when the PVA film is heated by a high-power laser. A modulation depth of 72% can be achieved only under 0.55 W/cm² modulated laser power, which is superior significantly to the bare Si. The numerical simulations indicate that the laser processed PVA (LP-PVA) film increases the photo-generated carrier concentration on the Si surface in two orders of magnitude higher than that of bare Si. Moreover, the modulation mechanism and the dynamic process of laser heating on the PVA/Si have been discussed. This highly efficient THz modulation mechanism and its simple fabrication method have great application potentials in THz modulators.

Ultraviolet light-induced terahertz modulation of an indium oxide film

Active ultraviolet light-induced terahertz modulation of an indium oxide film is investigated. A large absorption modulation of ~66% is achieved upon illumination with a low intensity UV laser (11 mW/cm²). The interaction between indium oxide and a flexible metamaterial structure is investigated owing to the large UV-induced enhancement of photo carriers observed in an indium oxide film. We are able to realize absorption peak shifts of 37 GHz by changing the UV excitation light intensity. We also propose a multi-frequency switch by building a circular metallic split ring resonator whose gaps are filled with silicon, germanium, and indium oxide. In future, a photo-excited tunable multi-frequency metamaterial switch can be realized by irradiating the structure with multi-wavelength laser beam.

Tunable terahertz wave-plate based on dual-frequency liquid crystal controlled by alternating electric field

In this work, the optically anisotropic property of dual-frequency liquid crystals (DFLC) in terahertz (THz) regime has been experimentally investigated, which indicates that the refractive index and birefringence of DFLC can be continuously modulated by both the alternating frequency and intensity of the alternating electric field. This tunability originates from the rotation of DFLC molecules induced by alternating electric fields. The results show that by modulating the alternating frequency from 1 kHz to 100 kHz under 30 kV/m electric field, the 600 μm thickness DFLC cell can play as a tunable quarter-wave plate above 0.68 THz, or a half-wave plate above 1.33 THz. Besides, it can be viewed as a tunable THz phase shifter from 0 to π. Therefore, due to its novel tuning mechanism, DFLC will be of great significance in dynamic manipulating on THz phase and polarization.

Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet

The terahertz (THz) modulator, which will be applied in next-generation wireless communication, is a key device in a THz communication system. Current THz modulators based on traditional semiconductors and metamaterials have limited modulation depth or modulation range. Therefore, a THz modulator based on annealed tungsten disulfide (WS₂, p-type) and high-resistivity silicon (n-type) is demonstrated. Pumped by a laser, the modulator presents a laser power-dependent modulation effect. Ranging from 0.25 to 2 THz, the modulation depth reaches 99% when the pumping laser is 2.59 W/cm². The modulator works because the p-n heterojunction can separate and limit carriers to change the conductivity of the device, which results in a modulation of the THz wave. The wide band gap of WS₂ can promote the separation and limitation of carriers to obtain a larger modulation depth, which provides a new direction for choosing new materials and new structures to fabricate a better THz modulator.

Optically controlled terahertz modulator by liquid-exfoliated multilayer WS2 nanosheets

Lack of efficient routes to modulate the propagation properties of the terahertz (THz) wave is a major barrier for the further development of THz technology. In recent years, two dimensional transition metal dichalcogenides (2D TMDCs) were applied to the design of effective THz modulator by forming heterostructure with Si. Here, we experimentally demonstrate an optical controlled THz modulator consisting of liquid-exfoliated WS₂ nanosheets and a silicon substrate (WS₂-Si). By innovatively depositing liquid-exfoliated WS₂ nanosheets on the Si instead of growing by chemical vapor deposition (CVD) method, both of the size and the thickness of WS₂ film is controlled. The WS₂-Si sample presents a flat modulation depth from 0.2 THz to 1.6 THz. The modulation depth reaches 56.7% under a 50 mW pumping power, which is over 5 times enhanced compared with that of the Si substrate. With the increase of illumination power, the modulation depth continues to increase, finally reaching up to 94.8% under 470 mW. Besides, the WS₂-Si sample also achieves ~80% modulation depth under 450 nm illumination, indicating its ability to operate under either of wavelength in visible spectra. Moreover, we compare the sample to the reported modulators including CVD growth TMDCs-Si ones and find our sample has comparable modulation effects while is much easy to be prepared. Therefore, we believe our work is meaningful to provide an alternative route to achieve effective modulation of THz waves by adopting liquid-exfoliated 2D materials.

Artificial high birefringence in all-dielectric gradient grating for broadband terahertz waves

Subwavelength dielectric gratings are widely applied in the phase and polarization manipulation of light. However, the dispersion of the normal dielectric gratings is not flat while their birefringences are not enough in the THz regime. In this paper, we have fabricated two all-dielectric gratings with gradient grids in the THz regime, of which artificial birefringence is much larger than that of the equal-grid dielectric grating demonstrated by both experiments and simulations. The transmission and dispersion characteristics are also improved since the gradient grids break the periodicity of grating lattices as a chirp feature. From 0.6–1.4 THz, a broadband birefringence reaches 0.35 with a low dispersion and good linearity of phase shift, and the maximum phase shift is 1.4π. Furthermore, these gradient gratings are applied as half-wave plates and realize a linear polarization conversion with a conversion rate over 99%, also much higher than the equal-grid gratings. These gradient gratings show great advantages compared to the periodic gratings and provide a new way in the designing of artificial birefringence material.