Electrocatalytic activity of NiO on silicon nanowires with a carbon shell and its application in dye-sensitized solar cell counter electrodes

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

A key requirement for the development of highly efficient silicon nanowires (SiNWs) for use in various kinds of cutting-edge applications is the outstanding passivation of their surfaces. In this vein, we report on a superior passivation of a SiNWs surface by bismuth nano-coating (BiNC) for the first time. A metal-assisted chemical etching technique was used to produce the SiNW arrays, while the BiNCs were anchored on the NWs through thermal evaporation. The systematic studies by Scanning Electron Microscopy (SEM), energy dispersive X-ray spectra (EDX), and Fourier Transform Infra-Red (FTIR) spectroscopies highlight the successful decoration of SiNWs by BiNC. The photoluminescence (PL) emission properties of the samples were studied in the visible and near-infrared (NIR) spectral range. Interestingly, nine-fold visible PL enhancement and NIR broadband emission were recorded for the Bi-modified SiNWs. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs (Bi@SiNWs), and thus sheds light on a new family of Bi-doped materials operating in the NIR and covering the important telecommunication wavelengths. Excellent anti-reflectance abilities of ~10% and 8% are observed for pure SiNWs and Bi@SiNWs, respectively, as compared to the Si wafer (50–90%). A large decrease in the recombination activities is also obtained from Bi@SiNWs heterostructures. The reasons behind the superior improvement of the Bi@SiNWs performance are discussed in detail. The findings demonstrate the effectiveness of Bi as a novel surface passivation coating, where Bi@SiNWs heterostructures are very promising and multifunctional for photovoltaics, optoelectronics, and telecommunications.

Functional integration and self-template synthesis of hollow core-shell carbon mesoporous spheres/Fe3O4/nitrogen-doped graphene to enhance catalytic activity in DSSCs

Excellent corrosion resistance is crucial for photovoltaic devices to acquire high and stable performance under high corrosive complicated environments. Creative inspiration comes from sandwich construction, whereby Fe3O4 nanoparticles were anchored onto hollow core-shell carbon mesoporous microspheres and wrapped by N-graphene nanosheets (HCCMS/Fe3O4@N-RGO) to obtain integrated high corrosive resistance and stability. The as-prepared multiple composite material possesses outstanding performance as a result of structure optimization, performance improvement, and interface synergy. Therefore, it can effectively suppress corrosion from the electrolyte in recycled tests many times, indicating the ultrahigh corrosion resistance life of this double carbon-based nanocomposite. Furthermore, the electrical conductivity and conversion efficiency of the composite are well maintained due to the triple synergistic interactions, which could serve as a guideline in establishing high-performance multifunctional HCCMS/Fe3O4@N-RGO with great prospects in energy devices, such as lithium batteries, supercapacitors and electrode materials, etc.

A hierarchical CoFeS2/reduced graphene oxide composite for highly efficient counter electrodes in dye-sensitized solar cells

Transition metal sulfides are a kind of potential candidates for efficient and stable CE materials in DSSCs due to their good electrocatalytic ability and stability towards I₃^- reduction. However, the low conductivity of sulfides is harmful for the electron collection and transfer process, and the absorption/desorption and diffusion process of I^-/I₃^- should be optimized to achieve high electrocatalytic activity over Pt. Herein, a hierarchical CoFeS₂/reduced graphene oxide (CoFeS₂/rGO) composite was rationally designed and prepared via the in situ conversion of CoFe layer double hydroxide anchored on rGO. Due to the synergistic effects of Co and Fe, unique 3D hierarchical structures formed by nanosheets, and the conductivity of rGO, the CoFeS₂/rGO CEs exhibited good electrocatalytic activity and stability towards the reduction of I₃^- to I^-, and the DSSCs could also achieve a high efficiency of 8.82%, higher than those of the devices based on Pt (8.40%) and pure CoFeS₂ (8.30%) CEs. Moreover, the devices also showed the characteristics of fast activity onset, good stability, and high multiple start/stop capability. The results indicated that the developed CoFeS₂/rGO composite could be a promising alternative for Pt in DSSCs.

Application of Cu3InSnSe5 Heteronanostructures as Counter Electrodes for Dye-Sensitized Solar Cells

In this research, we reported the synthesis of quaternary Cu₃InSnSe₅ nanoparticles with uniform size distribution and morphology for the first time through delicate controls over the chemical reaction kinetics. On the basis of the preparation strategy of Cu₃InSnSe₅ nanoparticles, Pt-Cu₃InSnSe₅ and Au-Cu₃InSnSe₅ heteronanostructures were designed and yielded using a simple and efficient seed growth method. These two heteronanostructures remained monodispersed without presence of any Cu₃InSnSe₅ nanocrystal impurities. To explore their application potentials for dye-sensitized solar cells, counter electrodes consisting of individual Cu₃InSnSe₅, Pt-Cu₃InSnSe₅, or Au-Cu₃InSnSe₅ constituents were fabricated. Current density-voltage (J-V) characteristics evaluation reveals that Cu₃InSnSe₅ nanoparticles, Pt-Cu₃InSnSe₅ and Au-Cu₃InSnSe₅ heterostructured nanoparticles display a comparative power conversion efficiency (PCE) of 5.8%, 7.6%, and 6.5% to that of a Pt-based counter electrode (7.9%), respectively. As such, we believe that the reported preparation strategy could provide new insights to the design and manufacture of counter electrode materials with controlled structure, morphology, and optimized power conversion efficiency for dye-sensitized solar cells.

Silicon nanowire heterostructures for advanced energy and environmental applications: a review

Semiconductor nanowires (NWs), in particular Si NWs, have attracted much attention in the last decade for their unique electronic properties and potential applications in several emerging areas. With the introduction of heterostructures (HSs) on NWs, new functionalities are obtained and the device performance is improved significantly in many cases. Due to the easy fabrication techniques, excellent optoelectronic properties and compatibility of forming HSs with different inorganic/organic materials, Si NW HSs have been utilized in various configurations and device architectures. Herein, we review the recent developments in Si NW HS-based devices including the fabrication techniques, properties (e.g., light emitting, antireflective, photocatalytic, electrical, photovoltaic, sensing etc) and related emerging applications in energy generation, conversion, storage, and environmental cleaning and monitoring. In particular, recent advances in Si NW HS-based solar photovoltaics, light-emitting devices, thermoelectrics, Li-ion batteries, supercapacitors, hydrogen generation, artificial photosynthesis, photocatalytic degradation of organic dyes in water treatment, chemical and gas sensors, biomolecular sensors for microbial monitoring etc have been addressed in detail. The problems and challenges in utilizing Si NW HSs in device applications and the key parameters to improve the device performance are pointed out. The recent trends in the commercial applications of Si NW HS-based devices and future outlook of the field are presented at the end.

Single gold nanowire electrodes and single Pt@Au nanowire electrodes: electrochemistry and applications

Single Au nanowire electrodes and single Pt@Au nanowire electrodes have been prepared and used to investigate electrochemical properties, fabricate an E-DNA sensor and study the oxygen reduction reaction.