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Al-Khatatbeh Y, Tarawneh K. Ultrahigh pressure phase stability of AlB 2-type and CaC 2-type structures with respect to Fe 2P-type and Ni 2In-type structures of zirconia. Sci Rep 2023; 13:17333. [PMID: 37833497 PMCID: PMC10575945 DOI: 10.1038/s41598-023-44508-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Accepted: 10/09/2023] [Indexed: 10/15/2023] Open
Abstract
Using density-functional theory, we have performed first-principles calculations to test the phase stability of the hexagonal AlB2-type and tetragonal CaC2-type phases at ultrahigh pressures with respect to the experimentally observed hexagonal Fe2P-type phase and the recently predicted (as post-Fe2P) hexagonal Ni2In-type phase of ZrO2. The phase relations among the four phases have been thoroughly investigated to better understand the high-pressure behavior of ZrO2, especially the upper part of the pressure phase transition sequence. Our enthalpy calculations revealed that the transformation from Ni2In phase to either AlB2 phase or CaC2 phase is unlikely to happen. On the other hand, a direct phase transition from Fe2P phase to Ni2In, CaC2 and AlB2 phases is predicted to occur at 325 GPa, 505 GPa and 1093 GPa, respectively. A deep discussion has been made on the Fe2P → Ni2In and Fe2P → CaC2 transitions in terms of the volume change, the coordination number (CN) change, and the band gap change to obtain a better prediction of the favored post-Fe2P phase of ZrO2. Additionally, the equation of state (EOS) parameters for each phase have been computed using Birch-Murnaghan EOS. To further investigate the phase stability testing, we have studied the components of the enthalpy difference to explore their effect on our findings, and found that all predicted transitions from Fe2P phase are driven by the volume reduction effect when compared to the slight effect of the electronic energy gain.
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Affiliation(s)
- Yahya Al-Khatatbeh
- Department of Basic Sciences, Princess Sumaya University for Technology, Amman, 11941, Jordan.
| | - Khaldoun Tarawneh
- Department of Basic Sciences, Princess Sumaya University for Technology, Amman, 11941, Jordan
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Li W, Li X, Zhang X, Yu H, Han F, Bergara A, Lin J, Wu J, Yang G. Emergent superconductivity in TaO 3 at high pressures. Phys Chem Chem Phys 2023; 25:23502-23509. [PMID: 37624051 DOI: 10.1039/d3cp03094f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/26/2023]
Abstract
Tantalum (Ta) is an interesting transition metal that exhibits superconductivity in its elemental states. Additionally, several Ta chalcogenides (S and Se) have also demonstrated superconducting properties. In this work, we propose the existence of five high-pressure metallic Ta-O compounds (e.g., TaO3, TaO2, TaO, Ta2O, and Ta3O), composed of polyhedra centered on Ta/O atoms. These compounds exhibit distinct characteristics compared to the well-known semiconducting Ta2O5. One particularly interesting finding is that TaO3 shows an estimated superconducting transition temperature (Tc) of 3.87 K at 200 GPa. This superconductivity is primarily driven by the coupling between the low-frequency phonons derived from Ta and the O 2p and Ta 5d electrons. Remarkably, its dynamically stabilized pressure can be as low as 50 GPa, resulting in an enhanced electron-phonon coupling and a higher Tc of up to 9.02 K. When compared to the superconductivity of isomorphic TaX3 (X = O, S, and Se) compounds, the highest Tc in TaO3 is associated with the highest NEF and phonon vibrational frequency. These characteristics arise from the strong electronegativity and small atomic mass of the O atom. Consequently, our findings offer valuable insights into the intrinsic physical mechanisms of high-pressure behaviors in Ta-O compounds.
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Affiliation(s)
- Wenjing Li
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Northeast Normal University, Changchun 130024, China.
| | - Xing Li
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Xiaohua Zhang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Hong Yu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Northeast Normal University, Changchun 130024, China.
| | - Fanjunjie Han
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Northeast Normal University, Changchun 130024, China.
| | - Aitor Bergara
- Departamento de Física, Universidad del País Vasco-Euskal Herriko Unibertsitatea, UPV/EHU, Bilbao 48080, Spain.
- Donostia International Physics Center (DIPC), Donostia 20018, Spain
- Centro de Física de Materiales CFM, Centro Mixto CSIC-UPV/EHU, Donostia 20018, Spain
| | - Jianyan Lin
- College of Physics, Changchun Normal University, Changchun 130032, China.
| | - Jinhui Wu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Northeast Normal University, Changchun 130024, China.
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Northeast Normal University, Changchun 130024, China.
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
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Wang W, Zhang C, Jin Y, Li S, Zhang W, Kong P, Xie C, Du C, Liu Q, Zhang C. Structural, mechanical and electronic properties and hardness of ionic vanadium dihydrides under pressure from first-principles computations. Sci Rep 2020; 10:8868. [PMID: 32483252 PMCID: PMC7264295 DOI: 10.1038/s41598-020-65910-4] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2020] [Accepted: 05/12/2020] [Indexed: 11/09/2022] Open
Abstract
Based on a combination of the CALYPSO method for crystal structure prediction and first-principles calculations, we explore the crystal structures of VH2 under the pressure range of 0-300 GPa. The cubic Fm-3m phase with regular VH8 cubes is predicted to transform into orthorhombic Pnma structure with fascinating distorted VH9 tetrakaidecahedrons at 47.36 GPa. Both the Fm-3m phase at 0 GPa and the Pnma phase at 100 GPa are mechanically and dynamically stable, as verified with the calculations of elastic constants and phonon dispersions, respectively. Moreover, the calculated electronic band structure and density of states indicate both stable phases are metallic. Remarkably, the analyses of the Poisson's ratio, electron localization function (ELF) and Bader charge substantiate that both stable phases are ionic crystals on account of effective charges transferring from V atom to H. On the basis of the microscopic hardness model, the Fm-3m and Pnma crystals of VH2 are potentially incompressible and hard materials with the hardness values of 17.83 and 17.68 GPa, respectively.
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Affiliation(s)
- Wenjie Wang
- Department of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, 434023, China
| | - Chuanzhao Zhang
- Department of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, 434023, China.
| | - Yuanyuan Jin
- Department of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, 434023, China.
| | - Song Li
- Department of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, 434023, China
| | - Weibin Zhang
- Department of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, 434023, China
| | - Panlong Kong
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Southwest Jiaotong University, Chengdu, 610031, China
| | - Chengwu Xie
- Department of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, 434023, China
| | - Chengzhuo Du
- Department of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, 434023, China
| | - Qian Liu
- Department of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, 434023, China
| | - Caihong Zhang
- Department of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, 434023, China
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Zhang J, Zhang S, Zhao Z, Lin J, Zheng S, Sun Y, Yang G. Structural and electronic properties of tungsten oxides under high pressures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:085403. [PMID: 31693999 DOI: 10.1088/1361-648x/ab54de] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Tungsten (W) oxides have shown broad applications such as photocatalyst and cathode of lithium ion batteries. It is well-known that pressure can induce structural phase transition, producing novel properties. On the other hand, the study of W oxides under high pressures is beneficial for the control of the oxygen fugacity. In this work, we built the high-pressure phase diagram of W-O binary compounds through first-principles swarm-intelligence structural search calculations. WO2 and WO3 are stable in the whole considered pressure range from 0 to 300 GPa. Besides reproducing the known structures, we identify two new phases of WO2 (e.g. C2/m and Cmca) and three ones for WO3 (e.g. Pnma, Cmcm, and Pm-3n), associating with the evolution of polyhedron (i.e. octahedron → distorted octahedron for WO2, and octahedron → hendecahedron → tetradecahedron → icosahedron for WO3). More interestingly, the Pm-3n-structured WO3 shows the highest coordination number of 12. Electron structure calculations indicate that pressure-induced nonmetal → metal transition occurs for WO2 and WO3. Our study provides an opportunity to understand the structures and electronic properties of W-O system under high pressure.
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Affiliation(s)
- Jing Zhang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, People's Republic of China
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Zhong X, Yang L, Qu X, Wang Y, Yang J, Ma Y. Crystal Structures and Electronic Properties of Oxygen-rich Titanium Oxides at High Pressure. Inorg Chem 2018; 57:3254-3260. [PMID: 29498840 DOI: 10.1021/acs.inorgchem.7b03263] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Pressure is well-known to significantly change the bonding patterns of materials and lift the reactivity of elements, leading to the synthesis of unconventional compounds with fascinating properties. Titanium-oxygen (Ti-O) compounds (e.g., TiO2) are attracting increasing attention due to their attractive electronic properties and extensive industrial applications (e.g., photocatalysis and solar cells). Using the effective CALYPSO structure searching method combined with first-principles calculations, we theoretically explored various oxygen-rich Ti-O compounds at pressures ranging from 0 to 200 GPa. Our results revealed, unexpectedly, that pressure stabilizes two hitherto unknown stoichiometric oxygen-rich Ti2O5 and TiO3 compounds. Ti2O5 crystallized in P-421 c structure, whose remarkable feature is that it contains a peroxide group (O22-) with an O-O distance of 1.38 Å at 150 GPa. The trioxide TiO3 is an ionic metal and is the oxygen-richest compound known thus far in the Ti-O system. It adopts a high symmetry (space group Pm-3 n) structure consisting of a 12-fold coordinated face-sharing TiO12 icosahedron, where Ti has the highest coordination number with O among all Ti-O structures. The underlying mechanisms for the stabilization of Ti2O5 and TiO3 lie in the higher coordination number and denser structure packing. Our current results unravel the unusual oxygen-rich stoichiometry of Ti-O compounds and provide further insight into the diverse electronic properties of Ti oxides under high pressure.
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Affiliation(s)
- Xin Zhong
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education , Jilin Normal University , Siping 136000 , China.,Beijing Computational Science Research Center , Beijing 10084 , China.,College of Physics , Jilin Normal University , Siping 136000 , China
| | - Lihua Yang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education , Jilin Normal University , Siping 136000 , China
| | - Xin Qu
- State Key Lab of Superhard Materials, College of Physics , Jilin University , Changchun 130012 , China
| | - Yanchao Wang
- State Key Lab of Superhard Materials, College of Physics , Jilin University , Changchun 130012 , China
| | - Jinghai Yang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education , Jilin Normal University , Siping 136000 , China
| | - Yanming Ma
- Beijing Computational Science Research Center , Beijing 10084 , China.,State Key Lab of Superhard Materials, College of Physics , Jilin University , Changchun 130012 , China
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