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Sekar K, Doineau R, Mayarambakam S, Schmaltz B, Poulin-Vittrant G. Control of ZnO nanowires growth in flexible perovskite solar cells: A mini-review. Heliyon 2024; 10:e24706. [PMID: 38322830 PMCID: PMC10844130 DOI: 10.1016/j.heliyon.2024.e24706] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/12/2023] [Revised: 12/26/2023] [Accepted: 01/12/2024] [Indexed: 02/08/2024] Open
Abstract
Due to their excellent properties, Zinc oxide nanowires (ZnO NW) have been attractive and considered as a promising electron-transporting layer (ETL) in flexible Perovskite Solar Cells (FPSCs). Since the first report on ZnO NWs-based FPSCs giving 2.6 % power conversion efficiency (in 2013), great improvements have been made, allowing to reach up to∼15 % nowadays. However, some issues still need to be addressed, especially on flexible substrates, to achieve uniform and well-aligned ZnO NWs via low-cost chemical solution techniques. Several parameters, such as the growing method (time, temperature, precursors concentration), addition of seed layer (thickness, roughness, annealing temperature) and substrate (rigid or flexible), play a crucial role in ZnO NWs properties (i.e., length, diameter, density and aspect ratio). In this review, these parameters allowing to control the properties of ZnO NWs, like the growth techniques, utilization of seed layers and the growing method (time or precursors concentration) have been summarized. Then, a particular focus on the ZnO NW's role in FPSCs as well as the use of these results on the development of ZnO NWs-based FPSCs have been highlighted.
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Affiliation(s)
- Karthick Sekar
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire, 37071 Tours, France
| | - Raphaël Doineau
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire, 37071 Tours, France
| | | | - Bruno Schmaltz
- PCM2E EA 6299, Université de Tours, Parc de Grandmont, 37200 Tours, France
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2
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Bah M, Tlemcani TS, Boubenia S, Justeau C, Vivet N, Chauveau JM, Jomard F, Nadaud K, Poulin-Vittrant G, Alquier D. Assessing the electrical activity of individual ZnO nanowires thermally annealed in air. NANOSCALE ADVANCES 2022; 4:1125-1135. [PMID: 36131772 PMCID: PMC9417669 DOI: 10.1039/d1na00860a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/11/2021] [Accepted: 12/31/2021] [Indexed: 06/15/2023]
Abstract
ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications owing to their tunable electron concentration via structural and surface defect engineering. A 2D electrical profiling of these defects is necessary to understand their restructuring dynamics during engineering processes. Our work proposes the exploration of individual ZnO NWs, dispersed on a SiO2/p++-Si substrate without any embedding matrix, along their axial direction using scanning capacitance microscopy (SCM), which is a useful tool for 2D carrier profiling. ZnO NWs are hydrothermally grown using 0-20 mM ammonium hydroxide (NH4OH), one of the reactants of the hydrothermal synthesis, and then annealed in a tube oven at 350 °C/1.5-15 h and 450 °C/15 h. While the as-grown ZnO NWs are highly conductive, the annealed ones exhibit significant SCM data with a high signal-to-noise ratio and temperature-dependent uniformity. The SCM signal of ZnO NWs is influenced by both their reduced dimensionality and the electron screening degree inside them. The electrical activity of ZnO NWs is only observed below a critical defect concentration that depends on the annealing temperature. Optimal SCM signals of 200 and 147 mV are obtained for samples with 0 and 20 mM NH4OH, respectively, and annealed at 350 °C/15 h. The corresponding electron concentrations of 3.27 × 1018 and 4.58 × 1018 cm-3 were estimated from the calibration curve, respectively. While thermal treatment in air of ZnO NWs is an effective approach to tune the defect density, 2D electrical mapping enables identifying their optimal electrical characteristics, which could help to boost the performance of final devices exploiting their coupled semiconducting-piezoelectric properties.
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Affiliation(s)
- Micka Bah
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire 37071 Tours France
| | | | - Sarah Boubenia
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire 37071 Tours France
| | - Camille Justeau
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire 37071 Tours France
| | - Nicolas Vivet
- STMicroelectronics Tours 10 Rue Thalès de Milet 37100 Tours France
| | - Jean-Michel Chauveau
- Université Cote d'azur, CNRS, CRHEA Rue B. Gregory F-06560 Valbonne France
- Université Paris-Saclay, Université Versailles-Saint-Quentin, CNRS, GEMAC 78035 Versailles France
| | - François Jomard
- Université Paris-Saclay, Université Versailles-Saint-Quentin, CNRS, GEMAC 78035 Versailles France
| | - Kevin Nadaud
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire 37071 Tours France
| | | | - Daniel Alquier
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire 37071 Tours France
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Milano G, D'Ortenzi L, Bejtka K, Ciubini B, Porro S, Boarino L, Ricciardi C. Metal-insulator transition in single crystalline ZnO nanowires. NANOTECHNOLOGY 2021; 32:185202. [PMID: 33503595 DOI: 10.1088/1361-6528/abe072] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In this work, we report on the metal-insulator transition and electronic transport properties of single crystalline ZnO nanowires synthetized by means of Chemical Vapor Deposition. After evaluating the effect of adsorbed species on transport properties, the thermally activated conduction mechanism was investigated by temperature-dependent measurements in the range 81.7-250 K revealing that the electronic transport mechanism in these nanostructures is in good agreement with the presence of two thermally activated conduction channels. More importantly, it was observed that the electrical properties of ZnO NWs can be tuned from semiconducting to metallic-like as a function of temperature with a metal-to-insulator transition (MIT) observed at a critical temperature above room temperature (T c ∼ 365 K). Charge density and mobility were investigated by means of field effect measurements in NW field-effect transistor configuration. Results evidenced that the peculiar electronic transport properties of ZnO NWs are related to the high intrinsic n-type doping of these nanostructures that is responsible, at room temperature, of a charge carrier density that lays just below the critical concentration for the MIT. This work shows that native defects, Coulomb interactions and surface states influenced by adsorbed species can significantly influence charge transport in NWs.
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Affiliation(s)
- G Milano
- Advanced Materials Metrology and Life Science Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Strada delle Cacce 91, I-10135, Torino, Italy
- Department of Applied Science and Technology, Politecnico di Torino, c.so Duca degli Abruzzi 24, I-10129 Torino, Italy
| | - L D'Ortenzi
- Advanced Materials Metrology and Life Science Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Strada delle Cacce 91, I-10135, Torino, Italy
| | - K Bejtka
- Center for Sustainable Future Technologies, Istituto Italiano di Tecnologia, c.so Trento 21, I-10129 Torino, Italy
| | - B Ciubini
- Department of Applied Science and Technology, Politecnico di Torino, c.so Duca degli Abruzzi 24, I-10129 Torino, Italy
| | - S Porro
- Department of Applied Science and Technology, Politecnico di Torino, c.so Duca degli Abruzzi 24, I-10129 Torino, Italy
| | - L Boarino
- Advanced Materials Metrology and Life Science Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Strada delle Cacce 91, I-10135, Torino, Italy
| | - C Ricciardi
- Department of Applied Science and Technology, Politecnico di Torino, c.so Duca degli Abruzzi 24, I-10129 Torino, Italy
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Dimensional Roadmap for Maximizing the Piezoelectrical Response of ZnO Nanowire-Based Transducers: Impact of Growth Method. NANOMATERIALS 2021; 11:nano11040941. [PMID: 33917136 PMCID: PMC8067815 DOI: 10.3390/nano11040941] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Revised: 04/01/2021] [Accepted: 04/02/2021] [Indexed: 11/16/2022]
Abstract
ZnO nanowires are excellent candidates for energy harvesters, mechanical sensors, piezotronic and piezophototronic devices. The key parameters governing the general performance of the integrated devices include the dimensions of the ZnO nanowires used, their doping level, and surface trap density. However, although the method used to grow these nanowires has a strong impact on these parameters, its influence on the performance of the devices has been neither elucidated nor optimized yet. In this paper, we implement numerical simulations based on the finite element method combining the mechanical, piezoelectric, and semiconducting characteristic of the devices to reveal the influence of the growth method of ZnO nanowires. The electrical response of vertically integrated piezoelectric nanogenerators (VING) based on ZnO nanowire arrays operating in compression mode is investigated in detail. The properties of ZnO nanowires grown by the most widely used methods are taken into account on the basis of a thorough and comprehensive analysis of the experimental data found in the literature. Our results show that the performance of VING devices should be drastically affected by growth method. Important optimization guidelines are found. In particular, the optimal nanowire radius that would lead to best device performance is deduced for each growth method.
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Kulkarni MR, John RA, Tiwari N, Nirmal A, Ng SE, Nguyen AC, Mathews N. Field-Driven Athermal Activation of Amorphous Metal Oxide Semiconductors for Flexible Programmable Logic Circuits and Neuromorphic Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1901457. [PMID: 31120199 DOI: 10.1002/smll.201901457] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2019] [Revised: 04/12/2019] [Indexed: 06/09/2023]
Abstract
Despite extensive research, large-scale realization of metal-oxide electronics is still impeded by high-temperature fabrication, incompatible with flexible substrates. Ideally, an athermal treatment modifying the electronic structure of amorphous metal oxide semiconductors (AMOS) to generate sufficient carrier concentration would help mitigate such high-temperature requirements, enabling realization of high-performance electronics on flexible substrates. Here, a novel field-driven athermal activation of AMOS channels is demonstrated via an electrolyte-gating approach. Facilitating migration of charged oxygen species across the semiconductor-dielectric interface, this approach modulates the local electronic structure of the channel, generating sufficient carriers for charge transport and activating oxygen-compensated thin films. The thin-film transistors (TFTs) investigated here depict an enhancement of linear mobility from 51 to 105.25 cm2 V-1 s-1 (ionic-gated) and from 8.09 to 14.49 cm2 V-1 s-1 (back-gated), by creating additional oxygen vacancies. The accompanying stochiometric transformations, monitored via spectroscopic measurements (X-ray photoelectron spectroscopy) corroborate the detailed electrical (TFT, current evolution) parameter analyses, providing critical insights into the underlying oxygen-vacancy generation mechanism and clearly demonstrating field-induced activation as a promising alternative to conventional high-temperature annealing strategies. Facilitating on-demand active programing of the operation modes of transistors (enhancement vs depletion), this technique paves way for facile fabrication of logic circuits and neuromorphic transistors for bioinspired computing.
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Affiliation(s)
- Mohit Rameshchandra Kulkarni
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Rohit Abraham John
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Nidhi Tiwari
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, Singapore, 637553, Singapore
| | - Amoolya Nirmal
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Si En Ng
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Anh Chien Nguyen
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Nripan Mathews
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, Singapore, 637553, Singapore
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6
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Deposition Time and Annealing Effects of ZnO Seed Layer on Enhancing Vertical Alignment of Piezoelectric ZnO Nanowires. CHEMOSENSORS 2019. [DOI: 10.3390/chemosensors7010007] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Well aligned crystalline zinc oxide (ZnO) nanowires (NWs) on ZnO/Au/Ti/Si substrates were grown by so-called “hydrothermal synthesis”. ZnO seed layers with different thicknesses ranging from 5 to 100 nm, achieved by controlling the deposition time, were prepared by radio-frequency sputtering, followed by a post-annealing treatment in air at 400 °C. The effects of deposition time and annealing treatment of ZnO seed layers on the subsequent growth of ZnO NWs were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). The experimental results reveal that the quality and growth behaviors of ZnO NWs are strongly dependent on both the thickness and the heat treatment of the ZnO seed layers. This work is an optimization step of an easy, cost-effective, and industrially scalable process flow recently developed for the fabrication of a high performance, nanocomposite-based stretchable nanogenerator (SNG) on polydimethylsiloxane (PDMS) substrate. The morphological improvement of hydrothermally grown ZnO NWs may therefore lead to higher performance SNGs for the targeted application of mechanical energy harvesting, in order to supply flexible and wearable electronics.
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Dahiya AS, Boubenia S, Franzo G, Poulin-Vittrant G, Mirabella S, Alquier D. Photoluminescence Study of the Influence of Additive Ammonium Hydroxide in Hydrothermally Grown ZnO Nanowires. NANOSCALE RESEARCH LETTERS 2018; 13:249. [PMID: 30136036 PMCID: PMC6104415 DOI: 10.1186/s11671-018-2665-4] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2018] [Accepted: 08/09/2018] [Indexed: 05/27/2023]
Abstract
We report the influence of ammonium hydroxide (NH4OH), as growth additive, on zinc oxide nanomaterial through the optical response obtained by photoluminescence (PL). A low-temperature hydrothermal process is employed for the growth of ZnO nanowires (NWs) on seedless Au surface. A more than two order of magnitude change in ZnO NW density is demonstrated via careful addition of NH4OH in the growth solution. Further, we show by systematic experimental study and PL characterization data that the addition of NH4OH can degrade the optical response of ZnO NWs produced. The increase of growth solution basicity with the addition of NH4OH may slowly degrade the optical response of NWs by slowly etching its surfaces, increasing the point defects in ZnO NWs. The present study demonstrates the importance of growth nutrients to obtain quality controlled density tunable ZnO NWs on seedless conducting substrates.
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Affiliation(s)
- A. S. Dahiya
- GREMAN UMR 7347 Université de Tours, CNRS, INSA Centre Val de Loire, 16 rue Pierre et Marie Curie, 37071 Tours CEDEX2, France
| | - S. Boubenia
- GREMAN UMR 7347 Université de Tours, CNRS, INSA Centre Val de Loire, 16 rue Pierre et Marie Curie, 37071 Tours CEDEX2, France
| | - G. Franzo
- MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita’ di Catania, via S. Sofia 64, 95123 Catania, Italy
| | - G. Poulin-Vittrant
- GREMAN UMR 7347 CNRS, Université de Tours, INSA Centre Val de Loire, 3 rue de la Chocolaterie, CS 23410, 41034 Blois CEDEX, France
| | - S. Mirabella
- MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita’ di Catania, via S. Sofia 64, 95123 Catania, Italy
| | - D. Alquier
- GREMAN UMR 7347 Université de Tours, CNRS, INSA Centre Val de Loire, 16 rue Pierre et Marie Curie, 37071 Tours CEDEX2, France
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8
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Doumit N, Poulin‐Vittrant G. A New Simulation Approach for Performance Prediction of Vertically Integrated Nanogenerators. ADVANCED THEORY AND SIMULATIONS 2018. [DOI: 10.1002/adts.201800033] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Nicole Doumit
- GREMAN UMR 7347 Université de Tours CNRS, INSA Centre Val de Loire 3 Rue de la Chocolaterie, CS 23410 41034 Blois Cedex France
| | - Guylaine Poulin‐Vittrant
- GREMAN UMR 7347 Université de Tours CNRS, INSA Centre Val de Loire 3 Rue de la Chocolaterie, CS 23410 41034 Blois Cedex France
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9
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Pham HT, Nguyen TD, Islam ME, Tran DQ, Akabori M. Enhanced ferromagnetism of ZnO@Co/Ni hybrid core@shell nanowires grown by electrochemical deposition method. RSC Adv 2018; 8:632-639. [PMID: 35538987 PMCID: PMC9076884 DOI: 10.1039/c7ra11123a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/09/2017] [Accepted: 12/11/2017] [Indexed: 11/21/2022] Open
Abstract
The hybrid structure of ZnO NWs with the presence of different dopants recently has drawn many interests from researchers due to the possibility to integrate multiple functionalities into one single structure. In this article, we investigated the morphology, crystal structure and ferromagnetism of the ZnO@Co/Ni hybrid core@shell NWs prepared by a facile electrochemical deposition method. The results show that a thin layer of Ni and Co coated on the surface of ZnO NWs (confirmed by XRD, EDS, TEM and Raman scattering) can create a significant improvement of ferromagnetic property in such hybrid core@shell NWs. In which, for the coating time of 10, 15, 20 min, the value of M s is around 0.67, 0.88 and 2.56 emu g-1 for ZnO@Co NWs, and about 0.013, 0.022 and 0.031 emu g-1 for ZnO@Ni NWs, respectively, in comparison with the number of 0.016 emu g-1 for pure ZnO NWs. Interestingly, we also found the temperature dependence of ferromagnetism of such Co/Ni coated ZnO NWs. These results reveal the possibility to employ such hybrid core@shell NWs for many applications, e.g. spin field effect transistors.
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Affiliation(s)
- Huyen T Pham
- Japan Advanced Institute of Science and Technology 1-1 Asahidai Nomi 923-1292 Japan
| | - Tam D Nguyen
- Interdisciplinary Graduate School, Nanyang Technological University Singapore
- Energy Research Institute @ Nanyang Technological University Singapore
| | - Md Earul Islam
- Japan Advanced Institute of Science and Technology 1-1 Asahidai Nomi 923-1292 Japan
| | - Dat Q Tran
- Japan Advanced Institute of Science and Technology 1-1 Asahidai Nomi 923-1292 Japan
| | - Masashi Akabori
- Japan Advanced Institute of Science and Technology 1-1 Asahidai Nomi 923-1292 Japan
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Burke-Govey CP, Castanet U, Warring H, Nau A, Ruck BJ, Majimel J, Plank NOV. Realizing field-dependent conduction in ZnO nanowires without annealing. NANOTECHNOLOGY 2017; 28:124003. [PMID: 28229953 DOI: 10.1088/1361-6528/aa5e43] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report on the low-temperature fabrication of field-effect transistors by bridging pre-patterned electrodes using ZnO nanowires grown in situ, which operate without requiring post-growth processing or annealing. The devices show good performance using as-grown nanowires, with on-off ratios of 105 and threshold voltages of 2 V. Electron microscopy shows the field-dependent nanowires hierarchically nucleate from larger ZnO nanorods, and both are oriented along a common c-axis. A high nanowire surface-to-volume ratio allows depleting electron traps on the nanowire surface to compensate intrinsic electron donors present throughout the nanowire bulk. This eliminates the need to reduce the electron concentration through high-temperature annealing, making the nanowires naturally field-dependent in their as-grown state.
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Affiliation(s)
- C P Burke-Govey
- School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington 6021, New Zealand. The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand
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Single-crystalline ZnO sheet Source-Gated Transistors. Sci Rep 2016; 6:19232. [PMID: 26757945 PMCID: PMC4725757 DOI: 10.1038/srep19232] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2015] [Accepted: 12/09/2015] [Indexed: 11/08/2022] Open
Abstract
Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the present work demonstrate the assembly of SGTs based on single-crystalline ZnO sheet (ZS) with asymmetric ohmic drain and Schottky source contacts. Electrical transport studies of the fabricated devices show excellent field-effect transport behaviour with abrupt drain current saturation (IDS(SAT)) at low drain voltages well below 2 V, even at very large gate voltages. The performance of a ZS based SGT is compared with a similar device with ohmic source contacts. The ZS SGT is found to exhibit much higher intrinsic gain, comparable on/off ratio and low off currents in the sub-picoamp range. This approach of device assembly may form the technological basis for highly efficient low-power analog and digital electronics using ZnO and/or other semiconducting nanomaterial.
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