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Moon CJ, Park JW, Jang YR, Kim HS. Intense pulsed light annealing of solution-based indium-gallium-zinc-oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors. Sci Rep 2024; 14:1566. [PMID: 38238447 PMCID: PMC10796356 DOI: 10.1038/s41598-024-52096-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 01/13/2024] [Indexed: 01/22/2024] Open
Abstract
In this study, an intense pulsed light (IPL) annealing process for a printed multi-layered indium-gallium-zinc-oxide (IGZO) and silver (Ag) electrode structure was developed for a high performance all-printed inorganic thin film transistor (TFT). Through a solution process using IGZO precursor and Ag ink, the bottom gate structure TFT was fabricated. The spin coating method was used to form the IGZO semiconductor layer on a heavily-doped silicon wafer covered with thermally grown silicon dioxide. The annealing process of the IGZO layer utilized an optimized IPL irradiation process. The Ag inks were printed on the IGZO layer by screen printing to form the source and drain (S/D) pattern. This S/D pattern was dried by near infrared radiation (NIR) and the dried S/D pattern was sintered with intense pulsed light by varying the irradiation energy. The performances of the all-printed TFT such as the field effect mobility and on-off ratio electrical transfer properties were measured by a parameter analyzer. The interfacial analysis including the contact resistance and cross-sectional microstructure analysis is essential because diffusion phenomenon can occur during the annealing and sintering process. Consequently, this TFT device showed noteworthy performance (field effect mobility: 7.96 cm2/V s, on/off ratio: 107). This is similar performance compared to a conventional TFT, which is expected to open a new path in the printed metal oxide-based TFT field.
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Affiliation(s)
- Chang-Jin Moon
- Department of Mechanical Engineering, Hanyang University, Haengdang-Dong, Seongdong-gu, Seoul, 133-791, Republic of Korea
| | - Jong-Whi Park
- Department of Mechanical Engineering, Hanyang University, Haengdang-Dong, Seongdong-gu, Seoul, 133-791, Republic of Korea
| | - Yong-Rae Jang
- Department of Mechanical Engineering, Hanyang University, Haengdang-Dong, Seongdong-gu, Seoul, 133-791, Republic of Korea
| | - Hak-Sung Kim
- Department of Mechanical Engineering, Hanyang University, Haengdang-Dong, Seongdong-gu, Seoul, 133-791, Republic of Korea.
- Institute of Nano Science and Technology, Hanyang University, Seoul, 133-791, Republic of Korea.
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2
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Ko JB, Cho SI, Park SHK. Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47799-47809. [PMID: 37769061 DOI: 10.1021/acsami.3c10185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/30/2023]
Abstract
Top-gate self-aligned structured oxide thin-film transistors (TFTs) are suitable for the backplanes of high-end displays because of their low parasitic capacitances. The gate insulator (GI) deposition process should be carefully designed to manufacture a highly stable, high-mobility oxide TFT, particularly for a top-gate structure. In this study, a nanometer-thick Al2O3 layer via plasma-enhanced atomic layer deposition (PE-ALD) is deposited on the top-gate bottom-contact structured oxide TFT as the interface tailoring layer, which can also act as the hydrogen barrier to modulate carrier generation from hydrogen incorporation into the active layer of the TFT during the following process such as postannealing. Al-doped InSnZnO (Al/ITZO) with an Al/In/Sn/Zn atomic ratio composition of 1.7:24.3:40:34 was used for high mobility oxide semiconductors, and an Al2O3/Si3N4 bilayer was used for the GI. The degradation issue due to the excellent barrier characteristics of Al2O3 and Si3N4 can be minimized. An oxide TFT fabricated without the interface tailoring layer exhibits conductor-like characteristics owing to the excessive carrier generation by hydrogen incorporation. However, TFTs with additional interface layers exhibit reasonable characteristics and distinct trends in electrical characteristics depending on the thicknesses of the interface layers. The optimized devices exhibit an average turn-on voltage (Von) of -0.31 V with 33.63 cm2/(V s) of high mobility and 0.09 V/dec of subthreshold swing value. The interfaces between the active layer and hydrogen barriers were investigated using a high-resolution transmission electron microscope, contact angle measurement, and secondary ion mass spectroscopy to reveal the origin of the trends in properties between the devices. The top-gate device with a hydrogen barrier using the four-cycle deposition exhibits optimum electrical characteristics of both high mobility and good stability with only a 0.04 V shift of Von under positive-bias temperature stress (PBTS). We realize a high-end, self-aligned TFT with high mobility [34.7 cm2/(V s)] and negligible Von shift of -0.06 V under PBTS by applying a subnanometer hydrogen barrier.
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Affiliation(s)
- Jong Beom Ko
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
| | - Seong-In Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
| | - Sang-Hee Ko Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
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3
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Bachevillier S, Yuan HK, Tetzner K, Bradley DDC, Anthopoulos TD, Stavrinou PN, Stingelin N. Planar refractive index patterning through microcontact photo-thermal annealing of a printable organic/inorganic hybrid material. MATERIALS HORIZONS 2022; 9:411-416. [PMID: 34668508 DOI: 10.1039/d1mh01366a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We demonstrate proof-of-concept refractive-index structures with large refractive-index-gradient profiles, using a micro-contact photothermal annealing (μCPA) process to pattern organic/inorganic hybrid materials comprising titanium oxide hydrate within a poly(vinyl alcohol) binder. A significant refractive index modulation of up to Δn ≈ +0.05 can be achieved with μCPA within less than a second of pulsed lamp exposure, which promises the potential for a high throughput fabrication process of photonic structures with a polymer-based system.
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Affiliation(s)
- Stefan Bachevillier
- Department of Materials and Centre for Plastic Electronics, Imperial College London, Exhibition Rd, London, SW7 2AZ, UK
| | - Hua-Kang Yuan
- Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, Prince Consort Rd, London, SW7 2AZ, UK
| | - Kornelius Tetzner
- Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
| | - Donal D C Bradley
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Thomas D Anthopoulos
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Paul N Stavrinou
- Department of Engineering Science, University of Oxford, Parks Rd, Oxford OX1 3PJ, UK.
| | - Natalie Stingelin
- School of Materials Science & Engineering and School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Ferst Drive, Atlanta, GA 300332, USA.
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4
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Weidling AM, Turkani VS, Luo B, Schroder KA, Swisher SL. Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors. ACS OMEGA 2021; 6:17323-17334. [PMID: 34278118 PMCID: PMC8280640 DOI: 10.1021/acsomega.1c01421] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2021] [Accepted: 06/15/2021] [Indexed: 05/25/2023]
Abstract
In this study, photonic curing is used to rapidly and effectively convert metal-oxide sol-gels to realize high-quality thin-film transistors (TFTs). Photonic curing offers advantages over conventional thermal processing methods such as ultrashort processing time and compatibility with low-temperature substrates. However, previous work on photonically cured TFTs often results in significant heating of the entire substrate rather than just the thin film at the surface. Here, sol-gel indium zinc oxide (IZO)-based TFTs are photonically cured with efficient gate absorbers requiring as few as five pulses using intense white light delivering radiant energy up to 6 J cm-2. Simulations indicate that the IZO film reaches a peak temperature of ∼590 °C while the back of the substrate stays below 30 °C. The requirements and design guidelines for photonic curing metal-oxide semiconductors for high-performance TFT applications are discussed, focusing on the importance of effective gate absorbers and optimized pulse designs to efficiently and effectively cure sol-gel films. This process yields TFTs with a field-effect mobility of 21.8 cm2 V-1 s-1 and an I on/I off ratio approaching 108, which exceeds the performance of samples annealed at 500 °C for 1 h. This is the best performance and highest metal-oxide conversion for photonically cured oxide TFTs achieved to date that does not significantly heat the entire thickness of the substrate. Importantly, the conversion from sol-gel precursors to the semiconducting metal-oxide phase during photonic curing is on par with thermal annealing, which is a significant improvement over previous pulsed-light processing work. The use of efficient gate absorbers also allows for the reduction in the number of pulses and efficient sol-gel conversion.
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Affiliation(s)
- Adam M. Weidling
- Department
of Electrical and Computer Engineering, University of Minnesota, Twin Cities, 4-174 Keller Hall, 200 Union Street Southeast, Minneapolis, Minnesota 55455, United States
| | - Vikram S. Turkani
- NovaCentrix, 400 Parker Drive, Suite 1110, Austin, Texas 78728, United States
| | - Bing Luo
- Characterization
Facility, University of Minnesota, Twin
Cities, 12 Shepherd Labs,
100 Union Street Southeast, Minneapolis, Minnesota 55455, United States
| | - Kurt A. Schroder
- NovaCentrix, 400 Parker Drive, Suite 1110, Austin, Texas 78728, United States
| | - Sarah L. Swisher
- Department
of Electrical and Computer Engineering, University of Minnesota, Twin Cities, 4-174 Keller Hall, 200 Union Street Southeast, Minneapolis, Minnesota 55455, United States
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Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array. MICROMACHINES 2020; 11:mi11050508. [PMID: 32443447 PMCID: PMC7281425 DOI: 10.3390/mi11050508] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/22/2020] [Revised: 05/07/2020] [Accepted: 05/15/2020] [Indexed: 11/17/2022]
Abstract
We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were treated by IPL at atmospheric ambient and passivated by photo-sensitive polyimide (PSPI). When we treated the IGZO channel layer by the IPL rapid annealing process, saturation field effect mobility and subthreshold swing (S.S.) were improved. And, to protect the back-channel of oxide channel layers from oxygen and water molecules, we passivated TFT devices with photo-sensitive polyimide. The IGZO TFTs on glass substrate treated by IPL rapid annealing without PSPI passivation showed the field effect mobility (μFE) of 1.54 cm2/Vs and subthreshold swing (S.S.) of 0.708 V/decade. The PSPI-passivated IGZO TFTs showed higher μFE of 2.17 cm2/Vs than that of device without passivation process and improved S.S. of 0.225 V/decade. By using a simple and fast intense pulsed light treatment with an appropriate back-channel passivation layer, we could improve the electrical characteristics and hysteresis of IGZO-TFTs. We also showed the improved uniformity of electrical characteristics for IGZO TFT devices in the area of 10 × 40 mm2. Since this IPL rapid annealing process could be performed at a low temperature, it can be applied to flexible electronics on plastic substrates in the near future.
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Ko JB, Lee SH, Park KW, Park SHK. Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors. RSC Adv 2019; 9:36293-36300. [PMID: 35540589 PMCID: PMC9075037 DOI: 10.1039/c9ra06960g] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/02/2019] [Accepted: 11/02/2019] [Indexed: 02/04/2023] Open
Abstract
Self-aligned structured oxide thin-film transistors (TFTs) are appropriate candidates for use in the backplanes of high-end displays. Although SiNx is an appropriate candidate for use in the gate insulators (GIs) of high-performance driving TFTs, direct deposition of SiNx on top of high-mobility oxide semiconductors is impossible due to significant hydrogen (H) incorporation. In this study, we used AlOx deposited by thermal atomic layer deposition (T-ALD) as the first GI, as it has good H barrier characteristics. During the T-ALD, however, a small amount of H from H2O can also be incorporated into the adjacent active layer. In here, we performed O2 or N2O plasma treatment just prior to the T-ALD process to control the carrier density, and utilized H to passivate the defects rather than generate free carriers. While the TFT fabricated without plasma treatment exhibited conductive characteristics, both O2 and N2O plasma-treated TFTs exhibited good transfer characteristics, with a Vth of 2 V and high mobility (∼30 cm2 V−1 s−1). Although the TFT with a plasma-enhanced atomic layer deposited (PE-ALD) GI exhibited reasonable on/off characteristics, even without any plasma treatment, it exhibited poor stability. In contrast, the O2 plasma-treated TFT with T-ALD GI exhibited outstanding stability, i.e., a Vth shift of 0.23 V under positive-bias temperature stress for 10 ks and a current decay of 1.2% under current stress for 3 ks. Therefore, the T-ALD process for GI deposition can be adopted to yield high-mobility, high-stability top-gate-structured oxide TFTs under O2 or N2O plasma treatment. By supplying optimized oxygen and hydrogen, the highly stable and high mobility oxide TFTs with the top-gate structure were fabricated.![]()
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Affiliation(s)
- Jong Beom Ko
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Republic of Korea
| | - Seung-Hee Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Republic of Korea
| | - Kyung Woo Park
- Samsung Display, Co. Ltd. 1 Samsung-ro Yongin-si Gyeonggi-do 17113 Republic of Korea
| | - Sang-Hee Ko Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Republic of Korea
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7
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Scheideler W, Subramanian V. Printed flexible and transparent electronics: enhancing low-temperature processed metal oxides with 0D and 1D nanomaterials. NANOTECHNOLOGY 2019; 30:272001. [PMID: 30893670 DOI: 10.1088/1361-6528/ab1167] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Metal oxides have broad multifunctionality and important applications to energy, sensing, and information display. Printed electronics have recently adopted metal oxides to push the limits of performance and stability for flexible thin film systems. However, a grand challenge in this field is to achieve these properties while balancing the thermal budget, which critically determines the applicability, flexibility, and cost of these systems. This paper presents a focused review of printed metal oxide electronics, highlighting our recent work developing high-performance, printed transistors processed at low temperatures via aqueous precursor chemistries, nanomaterial hybrid inks, and ultraviolet annealing. These results reveal the potential for printing uniquely high-performance active devices (electronic mobility >10 cm2 V-1 s-1) but also illustrates the utility of nanocomposites that integrate nanomaterials within a metal oxide matrix for improving device performance.
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Affiliation(s)
- William Scheideler
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America
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8
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Sharma BK, Stoesser A, Mondal SK, Garlapati SK, Fawey MH, Chakravadhanula VSK, Kruk R, Hahn H, Dasgupta S. High-Performance All-Printed Amorphous Oxide FETs and Logics with Electronically Compatible Electrode/Channel Interface. ACS APPLIED MATERIALS & INTERFACES 2018; 10:22408-22418. [PMID: 29893115 DOI: 10.1021/acsami.8b04892] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes, and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO)-based-diffused a-IGZO-ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping-mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS-based logic circuits have also been demonstrated toward new-generation portable electronics.
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Affiliation(s)
- Bhupendra K Sharma
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | - Anna Stoesser
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | | | - Suresh Kumar Garlapati
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | - Mohammed H Fawey
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
- Joint Research Laboratory Nanomaterials at Technische Universität Darmstadt (TUD) , 64287 Darmstadt , Germany
| | | | - Robert Kruk
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | - Horst Hahn
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
- Joint Research Laboratory Nanomaterials at Technische Universität Darmstadt (TUD) , 64287 Darmstadt , Germany
| | - Subho Dasgupta
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
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Garlapati SK, Divya M, Breitung B, Kruk R, Hahn H, Dasgupta S. Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707600. [PMID: 29952112 DOI: 10.1002/adma.201707600] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2017] [Revised: 03/20/2018] [Indexed: 06/08/2023]
Abstract
Following the ever-expanding technological demands, printed electronics has shown palpable potential to create new and commercially viable technologies that will benefit from its unique characteristics, such as, large-area and wide range of substrate compatibility, conformability and low-cost. Through the last few decades, printed/solution-processed field-effect transistors (FETs) and circuits have witnessed immense research efforts, technological growth and increased commercial interests. Although printing of functional inks comprising organic semiconductors has already been initiated in early 1990s, gradually the attention, at least partially, has been shifted to various forms of inorganic semiconductors, starting from metal chalcogenides, oxides, carbon nanotubes and very recently to graphene and other 2D semiconductors. In this review, the entire domain of printable inorganic semiconductors is considered. In fact, thanks to the continuous development of materials/functional inks and novel design/printing strategies, the inorganic printed semiconductor-based circuits today have reached an operation frequency up to several hundreds of kilohertz with only a few nanosecond time delays at the individual FET/inverter levels; in this regard, often circuits based on hybrid material systems have been found to be advantageous. At the end, a comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.
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Affiliation(s)
- Suresh Kumar Garlapati
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Mitta Divya
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Ben Breitung
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Robert Kruk
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Horst Hahn
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Jovanka-Bontschits-Str. 2, ,64287, Darmstadt, Germany
| | - Subho Dasgupta
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
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Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer. Sci Rep 2016; 6:37764. [PMID: 27876893 PMCID: PMC5120347 DOI: 10.1038/srep37764] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2016] [Accepted: 11/01/2016] [Indexed: 11/25/2022] Open
Abstract
Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.
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11
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Yu X, Marks TJ, Facchetti A. Metal oxides for optoelectronic applications. NATURE MATERIALS 2016; 15:383-96. [PMID: 27005918 DOI: 10.1038/nmat4599] [Citation(s) in RCA: 380] [Impact Index Per Article: 47.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2015] [Accepted: 02/15/2016] [Indexed: 05/27/2023]
Abstract
Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.
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Affiliation(s)
- Xinge Yu
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Opto-electronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
- Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA
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