Solution-Processed All-inorganic Planar Heterojunction Solar Cells by Employing In Situ Grown Interfacial Layer with Dual Functions: Complementary Absorption and Selective Extraction of Photogenerated Holes

Photovoltaic conversion of renewable solar energy into electricity for sustainable energy production requires efficient, stable, and low-cost solar cells. Developing solution-processed all-inorganic solar cells is a practical scenario in virtue of the high charge mobility and good stability of inorganic semiconductors. Here, for the first time, we present a solution-processed all-inorganic planar heterojunction solar cell based on the nanoparticle film of copper indium sulfide (CuInS₂) by using an antimony trisulfide (Sb₂S₃) nanoparticle film as an interfacial layer between the CuInS₂ photon-harvesting layer and cathode. All of the component layers in the solar cell are in a superstrate architecture and sequentially in situ grown on a transparent conducting glass acting as anode by solution-processing methods. The dependences of device performance on the thickness of Sb₂S₃ film and the reduction of hole-trapping centers in the Sb₂S₃ film by thioacetamide treatment are investigated. The optimized all-inorganic device exhibits the best power conversion efficiency of 4.85% under AM 1.5G illumination and an excellent thermal stability. It is found that the Sb₂S₃ interfacial layer sandwiched between the CuInS₂ photon-harvesting layer and counter-electrode has dual functions, that is, to provide complementary absorption after CuInS₂ attenuation and to act as an effective hole-transporting layer to selectively extract photogenerated holes for effective charge collection efficiency.

Carrier recombination and transport dynamics in superstrate solar cells analyzed by modeling the intensity modulated photoresponses

The dynamics of carrier recombination and transport of two CuInS2 superstrate solar cells was studied by intensity modulated photovoltage and photocurrent spectroscopy (IMVS and IMPS respectively). For the analysis of the resulting data two different approaches were implemented. In the first approach, the typically used analysis in Dye Sensitized Solar Cells (DSSC) was adapted to obtain the characteristic times of the processes involved. The second approach was based on the fittings of both the IMVS and IMPS data to the solution of the continuity equation. These fittings allow the calculation of different dynamic parameters of the cells. Moreover, consistency between the obtained parameters was observed, in good agreement with the typical analysis for DSSC. The resulting dynamics was associated with the presence and distribution of defect states among the samples. Moreover, from the performed analysis, a relation between the results and the post-treatment applied to the solar cells could be established. The difference in the dynamics of the cells is mainly observed in the difference between the electron lifetimes of both solar cells.

Solution based synthesis of Cu(In,Ga)Se2 microcrystals and thin films

Herein, for the first time, we report the synthesis of quaternary Cu(In,Ga)Se₂ microcrystals (CIGSe MCs) using a facile and economical one-pot heating-up method. The most important parameters such as reaction temperature and time were varied to study their influences on the structural, morphological, compositional and optical properties of the MCs. Based on the results, the formation of CIGSe was initiated from binary β-CuSe and then converted into pure phase CIGSe by gradual incorporation of In³⁺ and Ga³⁺ ions into the β-CuSe crystal lattice. As the reaction time increases, the band gap energy was increased from 1.10 to 1.28 eV, whereas the size of the crystals increased from 0.9 to 3.1 μm. Besides, large-scale synthesis of CIGSe MCs exhibited a high reaction yield of 90%. Furthermore, the CIGSe MCs dispersed in the ethanol was coated as thin films by a drop casting method, which showed the optimum carrier concentration, high mobility and low resistivity. Moreover, the photoconductivity of the CIGSe MC thin film was enhanced by three order magnitude in comparison with CIGSe NC thin films. The solar cells fabricated with CIGSe MCs showed the PCE of 0.59% which is 14.75 times higher than CIGSe NCs. These preliminary results confirmed the potential of CIGSe MCs as an active absorber layer in low-cost thin film solar cells.

Herein, for the first time, we report the synthesis of quaternary Cu(In,Ga)Se₂ microcrystals (CIGSe MCs) using a facile and economical one-pot heating-up method.

Compound Copper Chalcogenide Nanocrystals

This review captures the synthesis, assembly, properties, and applications of copper chalcogenide NCs, which have achieved significant research interest in the last decade due to their compositional and structural versatility. The outstanding functional properties of these materials stems from the relationship between their band structure and defect concentration, including charge carrier concentration and electronic conductivity character, which consequently affects their optoelectronic, optical, and plasmonic properties. This, combined with several metastable crystal phases and stoichiometries and the low energy of formation of defects, makes the reproducible synthesis of these materials, with tunable parameters, remarkable. Further to this, the review captures the progress of the hierarchical assembly of these NCs, which bridges the link between their discrete and collective properties. Their ubiquitous application set has cross-cut energy conversion (photovoltaics, photocatalysis, thermoelectrics), energy storage (lithium-ion batteries, hydrogen generation), emissive materials (plasmonics, LEDs, biolabelling), sensors (electrochemical, biochemical), biomedical devices (magnetic resonance imaging, X-ray computer tomography), and medical therapies (photochemothermal therapies, immunotherapy, radiotherapy, and drug delivery). The confluence of advances in the synthesis, assembly, and application of these NCs in the past decade has the potential to significantly impact society, both economically and environmentally.

A deep look into the spray coating process in real-time-the crucial role of x-rays

Tailoring functional thin films and coating by rapid solvent-based processes is the basis for the fabrication of large scale high-end applications in nanotechnology. Due to solvent loss of the solution or dispersion inherent in the installation of functional thin films and multilayers the spraying and drying processes are strongly governed by non-equilibrium kinetics, often passing through transient states, until the final structure is installed. Therefore, the challenge is to observe the structural build-up during these coating processes in a spatially and time-resolved manner on multiple time and length scales, from the nanostructure to macroscopic length scales. During installation, the interaction of solid-fluid interfaces and between the different layers, the flow and evaporation themselves determine the structure of the coating. Advanced x-ray scattering methods open a powerful pathway for observing the involved processes in situ, from the spray to the coating, and allow for gaining deep insight in the nanostructuring processes. This review first provides an overview over these rapidly evolving methods, with main focus on functional coatings, organic photovoltaics and organic electronics. Secondly the role and decisive advantage of x-rays is outlined. Thirdly, focusing on spray deposition as a rapidly emerging method, recent advances in investigations of spray deposition of functional materials and devices via advanced x-ray scattering methods are presented.

Solid-state colloidal CuInS2 quantum dot solar cells enabled by bulk heterojunctions

Colloidal copper indium sulfide (CIS) nanocrystals (NCs) are Pb- and Cd-free alternatives for use as absorbers in quantum dot solar cells. In a heterojunction with TiO₂, non-annealed ligand-exchanged CIS NCs form solar cells yielding a meager power conversion efficiency (PCE) of 0.15%, with photocurrents plummeting far below predicted values from absorption. Decreasing the amount of zinc during post-treatment leads to improved mobility but marginal improvement in device performance (PCE = 0.30%). By incorporating CIS into a porous TiO₂ network, we saw an overall drastic improvement in device performance, reaching a PCE of 1.16%, mainly from an increase in short circuit current density (J_sc) and fill factor (FF) and a 10-fold increase in internal quantum efficiency (IQE). We have determined that by moving from a bilayer to a bulk heterojunction architecture, we have reduced the trap-assisted recombination as seen in changes in the ideality factor, the intensity dependence of the photocurrent and transient photocurrent (TPC) and photovoltage (TPV) characteristics.