Improved giant dielectric properties of CaCu3Ti4O12via simultaneously tuning the electrical properties of grains and grain boundaries by F− substitution

A novel concept to simultaneously modify the electric responses of the grain and grain boundaries of CaCu₃Ti₄O₁₂ ceramics was proposed, involving doping with F⁻ anions to improve the giant dielectric properties.

Origin(s) of the apparent colossal permittivity in (In1/2Nb1/2)xTi1−xO2: clarification on the strongly induced Maxwell–Wagner polarization relaxation by DC bias

The effects of DC bias on the dielectric and electrical properties of co-doped (In_1/2Nb_1/2)_xTi_1−xO₂ (IN-T), where x = 0.05 and 0.1, and single-doped Ti_0.975Nb_0.025O₂ ceramics are investigated.

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO₃ (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu₃Ti₄O₁₂ (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.